DK1114885T3 - CZ-enkeltkrystal doteret med Ga og Wafer samt fremgangsmåde til fremstilling af samme - Google Patents
CZ-enkeltkrystal doteret med Ga og Wafer samt fremgangsmåde til fremstilling af sammeInfo
- Publication number
- DK1114885T3 DK1114885T3 DK00922915T DK00922915T DK1114885T3 DK 1114885 T3 DK1114885 T3 DK 1114885T3 DK 00922915 T DK00922915 T DK 00922915T DK 00922915 T DK00922915 T DK 00922915T DK 1114885 T3 DK1114885 T3 DK 1114885T3
- Authority
- DK
- Denmark
- Prior art keywords
- wafer
- making
- well
- same
- single crystal
- Prior art date
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/02—Single-crystal growth by pulling from a melt, e.g. Czochralski method adding crystallising materials or reactants forming it in situ to the melt
- C30B15/04—Single-crystal growth by pulling from a melt, e.g. Czochralski method adding crystallising materials or reactants forming it in situ to the melt adding doping materials, e.g. for n-p-junction
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/06—Silicon
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Photovoltaic Devices (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP15069799 | 1999-05-28 | ||
JP26454999 | 1999-09-17 |
Publications (1)
Publication Number | Publication Date |
---|---|
DK1114885T3 true DK1114885T3 (da) | 2006-07-10 |
Family
ID=26480209
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DK00922915T DK1114885T3 (da) | 1999-05-28 | 2000-04-28 | CZ-enkeltkrystal doteret med Ga og Wafer samt fremgangsmåde til fremstilling af samme |
Country Status (9)
Country | Link |
---|---|
US (1) | US6815605B1 (da) |
EP (1) | EP1114885B1 (da) |
JP (1) | JP3679366B2 (da) |
KR (1) | KR100676459B1 (da) |
AU (1) | AU779183B2 (da) |
DE (1) | DE60026286T2 (da) |
DK (1) | DK1114885T3 (da) |
TW (1) | TWI223012B (da) |
WO (1) | WO2000073542A1 (da) |
Families Citing this family (33)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2002057351A (ja) | 2000-08-15 | 2002-02-22 | Shin Etsu Handotai Co Ltd | 太陽電池セルの製造方法および太陽電池セル |
JP2002076400A (ja) * | 2000-08-30 | 2002-03-15 | Shin Etsu Handotai Co Ltd | 太陽電池セルおよび太陽電池セルの製造方法 |
JP3855082B2 (ja) | 2002-10-07 | 2006-12-06 | 国立大学法人東京農工大学 | 多結晶シリコンの作製方法、多結晶シリコン、及び太陽電池 |
JP4832067B2 (ja) * | 2005-02-01 | 2011-12-07 | 東京エレクトロン株式会社 | シリコン部材およびその製造方法 |
US20070044832A1 (en) * | 2005-08-25 | 2007-03-01 | Fritzemeier Leslie G | Photovoltaic template |
EP1777753B1 (en) | 2005-10-21 | 2011-07-13 | Sumco Solar Corporation | SiGe Solar-cell single-crystal silicon substrate, SiGe solar cell element, and method for producing the same |
DE102006049683B3 (de) * | 2006-10-13 | 2008-05-29 | Q-Cells Ag | Verfahren und Vorrichtung zum Charakterisieren von Wafern bei der Herstellung von Solarzellen |
CN101148777B (zh) * | 2007-07-19 | 2011-03-23 | 任丙彦 | 直拉法生长掺镓硅单晶的方法和装置 |
US20090114274A1 (en) * | 2007-11-02 | 2009-05-07 | Fritzemeier Leslie G | Crystalline thin-film photovoltaic structures |
US8236603B1 (en) | 2008-09-04 | 2012-08-07 | Solexant Corp. | Polycrystalline semiconductor layers and methods for forming the same |
WO2010088366A1 (en) | 2009-01-28 | 2010-08-05 | Wakonda Technologies, Inc. | Large-grain crystalline thin-film structures and devices and methods for forming the same |
CN101805925B (zh) * | 2010-02-20 | 2012-08-15 | 西安隆基硅材料股份有限公司 | 太阳能电池用掺镓铟单晶硅材料及其制备方法 |
CN102234840A (zh) * | 2010-05-07 | 2011-11-09 | 姚罡 | 薄形硅晶片的制备方法 |
CN103249875B (zh) * | 2010-09-03 | 2016-10-12 | Gtatip控股有限责任公司 | 镓、铟、或铝掺杂单晶硅 |
US9105786B2 (en) * | 2011-04-18 | 2015-08-11 | Cisco Technology, Inc. | Thermal treatment of silicon wafers useful for photovoltaic applications |
JP2013103874A (ja) * | 2011-11-11 | 2013-05-30 | Yutaka Kamaike | シリコンおよび製造方法 |
FR2990563B1 (fr) * | 2012-05-11 | 2014-05-09 | Apollon Solar | Cellule solaire a base de silicium dope de type n |
CN104837769B (zh) * | 2012-12-11 | 2017-08-08 | 赫姆洛克半导体运营有限责任公司 | 形成和分析掺杂硅的方法 |
CN103060892B (zh) * | 2012-12-26 | 2015-09-16 | 江西赛维Ldk太阳能高科技有限公司 | 一种类单晶硅铸锭用籽晶拼接方法 |
JP2016503964A (ja) * | 2012-12-31 | 2016-02-08 | エムイーエムシー・エレクトロニック・マテリアルズ・ソシエタ・ペル・アチオニMEMC Electronic Materials, SpA | インジウムドープシリコンウェハおよびそれを用いた太陽電池セル |
CN103966665B (zh) * | 2014-05-15 | 2016-06-29 | 阿特斯光伏电力(洛阳)有限公司 | 一种掺镓多晶硅锭及其制备方法 |
JP5830147B1 (ja) | 2014-09-04 | 2015-12-09 | 信越化学工業株式会社 | 太陽電池及び太陽電池の製造方法 |
JP2016092238A (ja) | 2014-11-05 | 2016-05-23 | 信越化学工業株式会社 | 太陽電池及びその製造方法 |
JP6502651B2 (ja) | 2014-11-13 | 2019-04-17 | 信越化学工業株式会社 | 太陽電池の製造方法及び太陽電池モジュールの製造方法 |
JP5938113B1 (ja) * | 2015-01-05 | 2016-06-22 | 信越化学工業株式会社 | 太陽電池用基板の製造方法 |
JP5892527B1 (ja) | 2015-01-06 | 2016-03-23 | 信越化学工業株式会社 | 太陽電池用fzシリコン単結晶の製造方法及び太陽電池の製造方法 |
CN104775150A (zh) * | 2015-04-01 | 2015-07-15 | 宁晋赛美港龙电子材料有限公司 | 一种直拉法单晶硅生长中的掺嫁工艺 |
CN108364999A (zh) * | 2018-01-29 | 2018-08-03 | 泰州隆基乐叶光伏科技有限公司 | 一种单晶掺镓硅片及其制备方法和太阳电池 |
EP4010519A4 (en) | 2019-08-09 | 2023-09-13 | Leading Edge Equipment Technologies, Inc. | PRODUCING A RIBBON OR SLICE WITH REGIONS OF LOW OXYGEN CONCENTRATION |
JP7318518B2 (ja) * | 2019-11-26 | 2023-08-01 | 信越半導体株式会社 | 固体撮像素子用のシリコン単結晶基板及びシリコンエピタキシャルウェーハ、並びに固体撮像素子 |
US11824070B2 (en) | 2019-11-26 | 2023-11-21 | Shin-Etsu Handotai Co., Ltd. | Silicon single crystal substrate and silicon epitaxial wafer for solid-state image sensor and solid-state image sensor |
CN111477560B (zh) * | 2020-05-14 | 2023-03-03 | 包头美科硅能源有限公司 | 太阳能电池用镓、硼掺杂单晶硅棒区分的快速检测方法 |
JP7306536B1 (ja) | 2022-06-14 | 2023-07-11 | 信越半導体株式会社 | エピタキシャルウェーハの製造方法 |
Family Cites Families (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4152536A (en) * | 1975-12-05 | 1979-05-01 | Mobil Tyco Solar Energy Corp. | Solar cells |
US4134785A (en) * | 1977-04-13 | 1979-01-16 | Western Electric Company, Inc. | Real-time analysis and control of melt-chemistry in crystal growing operations |
JPS6427278A (en) | 1987-07-22 | 1989-01-30 | Sharp Kk | Space solar cell |
JP2795030B2 (ja) | 1992-01-29 | 1998-09-10 | 信越半導体株式会社 | 単結晶シリコン棒の製造方法 |
JP3203076B2 (ja) | 1992-11-30 | 2001-08-27 | シャープ株式会社 | 宇宙用シリコン太陽電池 |
JP3141975B2 (ja) | 1994-01-11 | 2001-03-07 | コマツ電子金属株式会社 | 不純物添加シリコン単結晶の育成方法 |
JP2687103B2 (ja) * | 1995-03-24 | 1997-12-08 | 科学技術振興事業団 | 温度分布を制御したSi単結晶育成方法 |
JP2720323B2 (ja) | 1995-03-24 | 1998-03-04 | 科学技術振興事業団 | 融液対流を制御したSi単結晶育成方法 |
EP0733726A3 (en) * | 1995-03-24 | 1997-05-02 | Koji Izunome | Growing silicon single crystal with a uniform distribution of doping in the longitudinal or radial direction |
JPH08330611A (ja) * | 1995-03-30 | 1996-12-13 | Sharp Corp | シリコン太陽電池セルとその製造方法 |
DE19522539C2 (de) * | 1995-06-21 | 1997-06-12 | Fraunhofer Ges Forschung | Solarzelle mit einem, eine Oberflächentextur aufweisenden Emitter sowie Verfahren zur Herstellung derselben |
JPH10324592A (ja) | 1997-05-26 | 1998-12-08 | Sumitomo Metal Ind Ltd | 単結晶引き上げ装置 |
KR100733726B1 (ko) * | 2007-04-06 | 2007-06-29 | 주식회사 디에스아이 | 수산화인회석/알루미나/실리카 복합체를 이용한 임플란트용매식체 |
-
2000
- 2000-04-28 KR KR1020017001060A patent/KR100676459B1/ko active IP Right Grant
- 2000-04-28 WO PCT/JP2000/002850 patent/WO2000073542A1/ja active IP Right Grant
- 2000-04-28 EP EP00922915A patent/EP1114885B1/en not_active Expired - Lifetime
- 2000-04-28 TW TW089108233A patent/TWI223012B/zh not_active IP Right Cessation
- 2000-04-28 DE DE60026286T patent/DE60026286T2/de not_active Expired - Lifetime
- 2000-04-28 AU AU43159/00A patent/AU779183B2/en not_active Expired
- 2000-04-28 DK DK00922915T patent/DK1114885T3/da active
- 2000-04-28 JP JP2001500025A patent/JP3679366B2/ja not_active Expired - Lifetime
- 2000-04-28 US US09/743,982 patent/US6815605B1/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
EP1114885A1 (en) | 2001-07-11 |
AU4315900A (en) | 2000-12-18 |
EP1114885A4 (en) | 2004-09-15 |
EP1114885B1 (en) | 2006-03-01 |
KR100676459B1 (ko) | 2007-01-31 |
AU779183B2 (en) | 2005-01-13 |
DE60026286D1 (de) | 2006-04-27 |
JP3679366B2 (ja) | 2005-08-03 |
TWI223012B (en) | 2004-11-01 |
KR20010079565A (ko) | 2001-08-22 |
WO2000073542A1 (fr) | 2000-12-07 |
DE60026286T2 (de) | 2006-11-09 |
US6815605B1 (en) | 2004-11-09 |
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