FR2990563B1 - Cellule solaire a base de silicium dope de type n - Google Patents

Cellule solaire a base de silicium dope de type n

Info

Publication number
FR2990563B1
FR2990563B1 FR1201382A FR1201382A FR2990563B1 FR 2990563 B1 FR2990563 B1 FR 2990563B1 FR 1201382 A FR1201382 A FR 1201382A FR 1201382 A FR1201382 A FR 1201382A FR 2990563 B1 FR2990563 B1 FR 2990563B1
Authority
FR
France
Prior art keywords
solar cell
type silicon
cell based
silicon dope
dope
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
FR1201382A
Other languages
English (en)
Other versions
FR2990563A1 (fr
Inventor
Maxime Forster
Roland Einhaus
Andres Cuevas
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Australian National University
Apollon Solar SAS
Original Assignee
Australian National University
Apollon Solar SAS
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority to FR1201382A priority Critical patent/FR2990563B1/fr
Application filed by Australian National University, Apollon Solar SAS filed Critical Australian National University
Priority to SG11201407151UA priority patent/SG11201407151UA/en
Priority to PCT/FR2013/000056 priority patent/WO2013167815A1/fr
Priority to JP2015510852A priority patent/JP2015516115A/ja
Priority to US14/400,690 priority patent/US20150136211A1/en
Priority to EP13715266.6A priority patent/EP2847801A1/fr
Priority to CN201380024709.9A priority patent/CN104471725B/zh
Priority to TW102116496A priority patent/TW201403836A/zh
Publication of FR2990563A1 publication Critical patent/FR2990563A1/fr
Application granted granted Critical
Publication of FR2990563B1 publication Critical patent/FR2990563B1/fr
Priority to PH12014502439A priority patent/PH12014502439A1/en
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
    • H01L31/0264—Inorganic materials
    • H01L31/028—Inorganic materials including, apart from doping material or other impurities, only elements of Group IV of the Periodic Table
    • H01L31/0288—Inorganic materials including, apart from doping material or other impurities, only elements of Group IV of the Periodic Table characterised by the doping material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
    • H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
    • H01L31/075—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PIN type, e.g. amorphous silicon PIN solar cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/548—Amorphous silicon PV cells

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Sustainable Development (AREA)
  • Photovoltaic Devices (AREA)
FR1201382A 2012-05-11 2012-05-11 Cellule solaire a base de silicium dope de type n Active FR2990563B1 (fr)

Priority Applications (9)

Application Number Priority Date Filing Date Title
FR1201382A FR2990563B1 (fr) 2012-05-11 2012-05-11 Cellule solaire a base de silicium dope de type n
PCT/FR2013/000056 WO2013167815A1 (fr) 2012-05-11 2013-02-28 Cellule solaire à base de silicium dopé de type n
JP2015510852A JP2015516115A (ja) 2012-05-11 2013-02-28 Ｎ型ドープしたシリコンを含む太陽電池
US14/400,690 US20150136211A1 (en) 2012-05-11 2013-02-28 Solar cell containing n-type doped silicon
SG11201407151UA SG11201407151UA (en) 2012-05-11 2013-02-28 Solar cell containing n-type doped silicon
EP13715266.6A EP2847801A1 (fr) 2012-05-11 2013-02-28 Cellule solaire à base de silicium dopé de type n
CN201380024709.9A CN104471725B (zh) 2012-05-11 2013-02-28 包含n掺杂硅的太阳能电池
TW102116496A TW201403836A (zh) 2012-05-11 2013-05-09 Ｎ摻雜以矽爲基礎之太陽能電池
PH12014502439A PH12014502439A1 (en) 2012-05-11 2014-10-30 Solar cell containing n-type doped silicon

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR1201382A FR2990563B1 (fr) 2012-05-11 2012-05-11 Cellule solaire a base de silicium dope de type n

Publications (2)

Publication Number Publication Date
FR2990563A1 FR2990563A1 (fr) 2013-11-15
FR2990563B1 true FR2990563B1 (fr) 2014-05-09

Family

ID=48083450

Family Applications (1)

Application Number Title Priority Date Filing Date
FR1201382A Active FR2990563B1 (fr) 2012-05-11 2012-05-11 Cellule solaire a base de silicium dope de type n

Country Status (9)

Country Link
US (1) US20150136211A1 (fr)
EP (1) EP2847801A1 (fr)
JP (1) JP2015516115A (fr)
CN (1) CN104471725B (fr)
FR (1) FR2990563B1 (fr)
PH (1) PH12014502439A1 (fr)
SG (1) SG11201407151UA (fr)
TW (1) TW201403836A (fr)
WO (1) WO2013167815A1 (fr)

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55153371A (en) * 1979-05-18 1980-11-29 Fujitsu Ltd Manufacturing method of complementary mis semiconductor device
JPS63244887A (ja) * 1987-03-31 1988-10-12 Sharp Corp アモルフアス太陽電池
JPH07263728A (ja) * 1994-03-23 1995-10-13 Fuji Electric Corp Res & Dev Ltd 薄膜太陽電池の製造方法
JP3386101B2 (ja) * 1996-08-29 2003-03-17 シャープ株式会社 半導体装置の製造方法
JP3394408B2 (ja) * 1997-01-13 2003-04-07 株式会社リコー 半導体装置及びその製造方法
US6262359B1 (en) * 1999-03-17 2001-07-17 Ebara Solar, Inc. Aluminum alloy back junction solar cell and a process for fabrication thereof
AU779183B2 (en) * 1999-05-28 2005-01-13 Shin-Etsu Chemical Co. Ltd. CZ single crystal doped with Ga and wafer and method for production thereof
JP2004221149A (ja) * 2003-01-10 2004-08-05 Hitachi Ltd 太陽電池の製造方法
US20060043531A1 (en) * 2004-08-27 2006-03-02 Varian Semiconductor Equipment Associates, Inc. Reduction of source and drain parasitic capacitance in CMOS devices
DE102005061820B4 (de) * 2005-12-23 2014-09-04 Infineon Technologies Austria Ag Verfahren zur Herstellung einer Solarzelle
FR2929960B1 (fr) * 2008-04-11 2011-05-13 Apollon Solar Procede de fabrication de silicium cristallin de qualite photovoltaique par ajout d'impuretes dopantes
DE102008030693A1 (de) * 2008-07-01 2010-01-14 Institut Für Solarenergieforschung Gmbh Heterojunction-Solarzelle mit Absorber mit integriertem Dotierprofil
JP5414298B2 (ja) * 2009-02-13 2014-02-12 信越化学工業株式会社 太陽電池の製造方法
KR20110128619A (ko) * 2010-05-24 2011-11-30 삼성전자주식회사 태양 전지 및 이의 제조 방법
US8110431B2 (en) * 2010-06-03 2012-02-07 Suniva, Inc. Ion implanted selective emitter solar cells with in situ surface passivation
KR20120040016A (ko) * 2010-10-18 2012-04-26 엘지전자 주식회사 태양 전지용 기판 및 태양 전지

Also Published As

Publication number Publication date
CN104471725B (zh) 2017-05-17
SG11201407151UA (en) 2014-12-30
FR2990563A1 (fr) 2013-11-15
TW201403836A (zh) 2014-01-16
PH12014502439A1 (en) 2015-01-26
WO2013167815A1 (fr) 2013-11-14
CN104471725A (zh) 2015-03-25
US20150136211A1 (en) 2015-05-21
EP2847801A1 (fr) 2015-03-18
JP2015516115A (ja) 2015-06-04

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