DK0600392T3 - Fremgangsmåde til forstærkning af en halvleder-wafer samt en forstærket halvleder-wafer - Google Patents
Fremgangsmåde til forstærkning af en halvleder-wafer samt en forstærket halvleder-waferInfo
- Publication number
- DK0600392T3 DK0600392T3 DK93119108T DK93119108T DK0600392T3 DK 0600392 T3 DK0600392 T3 DK 0600392T3 DK 93119108 T DK93119108 T DK 93119108T DK 93119108 T DK93119108 T DK 93119108T DK 0600392 T3 DK0600392 T3 DK 0600392T3
- Authority
- DK
- Denmark
- Prior art keywords
- semiconductor wafer
- reinforcing
- well
- reinforced
- reinforced semiconductor
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L21/6836—Wafer tapes, e.g. grinding or dicing support tapes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L24/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/68327—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used during dicing or grinding
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/8319—Arrangement of the layer connectors prior to mounting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/838—Bonding techniques
- H01L2224/8385—Bonding techniques using a polymer adhesive, e.g. an adhesive based on silicone, epoxy, polyimide, polyester
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01006—Carbon [C]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01013—Aluminum [Al]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01015—Phosphorus [P]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01027—Cobalt [Co]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01033—Arsenic [As]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01049—Indium [In]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01075—Rhenium [Re]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01078—Platinum [Pt]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01079—Gold [Au]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/013—Alloys
- H01L2924/0132—Binary Alloys
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/06—Polymers
- H01L2924/078—Adhesive characteristics other than chemical
- H01L2924/07802—Adhesive characteristics other than chemical not being an ohmic electrical conductor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/102—Material of the semiconductor or solid state bodies
- H01L2924/1025—Semiconducting materials
- H01L2924/1026—Compound semiconductors
- H01L2924/1032—III-V
- H01L2924/10329—Gallium arsenide [GaAs]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/12—Passive devices, e.g. 2 terminal devices
- H01L2924/1203—Rectifying Diode
- H01L2924/12036—PN diode
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/12—Passive devices, e.g. 2 terminal devices
- H01L2924/1204—Optical Diode
- H01L2924/12041—LED
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Adhesives Or Adhesive Processes (AREA)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP31738892 | 1992-11-26 | ||
JP11717393 | 1993-05-19 | ||
JP5222459A JPH0737768A (ja) | 1992-11-26 | 1993-09-07 | 半導体ウェハの補強方法及び補強された半導体ウェハ |
Publications (1)
Publication Number | Publication Date |
---|---|
DK0600392T3 true DK0600392T3 (da) | 2001-12-03 |
Family
ID=27313317
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DK93119108T DK0600392T3 (da) | 1992-11-26 | 1993-11-26 | Fremgangsmåde til forstærkning af en halvleder-wafer samt en forstærket halvleder-wafer |
Country Status (5)
Country | Link |
---|---|
US (1) | US5445692A (de) |
EP (2) | EP0600392B1 (de) |
JP (1) | JPH0737768A (de) |
DE (1) | DE69330777T2 (de) |
DK (1) | DK0600392T3 (de) |
Families Citing this family (29)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5751324A (en) * | 1996-03-14 | 1998-05-12 | Lexmark International, Inc. | Ink jet cartridge body with vented die cavity |
DE19610112C2 (de) * | 1996-03-14 | 2000-04-06 | Tech Gmbh Antriebstechnik Und | Verfahren zum Auflöten von Halbleiterchips |
US5972780A (en) * | 1996-08-22 | 1999-10-26 | Nippon Telegraph Telephone Corporation | Thin film forming apparatus and method |
DE19755088A1 (de) * | 1997-12-11 | 1999-06-17 | Daimler Chrysler Ag | Kalibriervorrichtung zum Verkleben von Scheiben |
JP3441382B2 (ja) * | 1998-10-14 | 2003-09-02 | 日本電信電話株式会社 | 半導体装置の製造方法 |
JP2001185519A (ja) | 1999-12-24 | 2001-07-06 | Hitachi Ltd | 半導体装置及びその製造方法 |
DE10029791C2 (de) | 2000-06-16 | 2002-04-18 | Infineon Technologies Ag | Verfahren zur Herstellung einer stabilen Verbindung zwischen zwei Wafern |
US6551905B1 (en) * | 2000-10-20 | 2003-04-22 | Trw Inc. | Wafer adhesive for semiconductor dry etch applications |
TW522531B (en) * | 2000-10-20 | 2003-03-01 | Matsushita Electric Ind Co Ltd | Semiconductor device, method of manufacturing the device and mehtod of mounting the device |
DE10054159A1 (de) * | 2000-11-02 | 2002-05-16 | Wacker Siltronic Halbleitermat | Verfahren zur Montage von Halbleiterscheiben |
JP3883929B2 (ja) * | 2001-09-25 | 2007-02-21 | 大日本スクリーン製造株式会社 | 薄膜形成装置および薄膜形成方法 |
US6732905B2 (en) * | 2002-04-16 | 2004-05-11 | Agilent Technologies, Inc. | Vented cavity, hermetic solder seal |
WO2003088355A1 (fr) * | 2002-04-17 | 2003-10-23 | Matsushita Electric Industrial Co., Ltd. | Dispositif a semi-conducteur et son procede d'assemblage |
JP4565804B2 (ja) * | 2002-06-03 | 2010-10-20 | スリーエム イノベイティブ プロパティズ カンパニー | 被研削基材を含む積層体、その製造方法並びに積層体を用いた極薄基材の製造方法及びそのための装置 |
FR2842647B1 (fr) * | 2002-07-17 | 2004-09-17 | Soitec Silicon On Insulator | Procede de transfert de couche |
US7063758B2 (en) * | 2002-07-29 | 2006-06-20 | Three Bond Co., Ltd. | Laminating apparatus and laminating method |
JP2006186224A (ja) * | 2004-12-28 | 2006-07-13 | Jsr Corp | 基板の支持方法および該方法に用いられる支持体 |
JPWO2006090650A1 (ja) * | 2005-02-23 | 2008-07-24 | Jsr株式会社 | ウェハ加工方法 |
JP2007109999A (ja) * | 2005-10-17 | 2007-04-26 | Tokyo Electron Ltd | 貼り合せ方法 |
WO2010082342A1 (ja) * | 2009-01-16 | 2010-07-22 | トヨタ自動車株式会社 | 半導体装置、半導体装置の製造方法、半導体装置の製造装置、および半導体装置の評価方法 |
US20110309467A1 (en) * | 2009-03-09 | 2011-12-22 | Sharp Kabushiki Kaisha | Semiconductor device and manufacturing method thereof |
JP2011254051A (ja) * | 2010-06-04 | 2011-12-15 | Sumitomo Electric Ind Ltd | 炭化珪素基板の製造方法、半導体装置の製造方法、炭化珪素基板および半導体装置 |
AU2011266575B2 (en) * | 2010-06-16 | 2013-08-01 | Shin-Etsu Chemical Co., Ltd. | Method for cleaning bell jar, method for manufacturing polycrystalline silicon and device for drying bell jar |
US8652935B2 (en) * | 2010-12-16 | 2014-02-18 | Tessera, Inc. | Void-free wafer bonding using channels |
JP5803549B2 (ja) * | 2011-10-13 | 2015-11-04 | 株式会社デンソー | 半導体装置の製造方法および半導体装置の製造装置 |
JP5895676B2 (ja) * | 2012-04-09 | 2016-03-30 | 三菱電機株式会社 | 半導体装置の製造方法 |
DE102012219145A1 (de) * | 2012-10-19 | 2014-05-08 | Robert Bosch Gmbh | Elektronikanordnung mit reduzierter Toleranzkette |
JP6534871B2 (ja) * | 2015-06-24 | 2019-06-26 | 株式会社ディスコ | 板状ワークの貼り合わせ方法 |
JP6916662B2 (ja) * | 2017-05-12 | 2021-08-11 | 株式会社ダイセル | シランカップリング剤処理装置、半導体チップ製造ライン、及び半導体ウェハの製造方法 |
Family Cites Families (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE2712521C2 (de) * | 1977-03-22 | 1987-03-05 | Wacker-Chemitronic Gesellschaft für Elektronik-Grundstoffe mbH, 8263 Burghausen | Verfahren zum Aufkitten von Scheiben |
JPS5498568A (en) * | 1978-01-23 | 1979-08-03 | Hitachi Ltd | Bonding method of semiconductor material |
JPS5598877A (en) * | 1979-01-24 | 1980-07-28 | Toshiba Corp | Semiconductor element |
JPS55140817A (en) * | 1979-04-23 | 1980-11-04 | Hitachi Ltd | Manufacture of liquid crystal display element |
US4316757A (en) * | 1980-03-03 | 1982-02-23 | Monsanto Company | Method and apparatus for wax mounting of thin wafers for polishing |
GB2099742B (en) * | 1981-06-05 | 1985-07-31 | Philips Electronic Associated | Bonding metals to non-metals |
JPS58110045A (ja) * | 1981-12-23 | 1983-06-30 | Fujitsu Ltd | 半導体装置の製造方法 |
US4714511A (en) * | 1985-02-07 | 1987-12-22 | Fujitsu Limited | Method and apparatus for adhering a tape or sheet to a semiconductor wafer |
JPS62171131A (ja) * | 1986-01-23 | 1987-07-28 | Nec Corp | 半導体装置 |
JPS6373638A (ja) * | 1986-09-17 | 1988-04-04 | Mitsubishi Electric Corp | ウエハ貼付装置 |
JPS63198351A (ja) * | 1987-02-13 | 1988-08-17 | Mitsubishi Electric Corp | 半導体ウエハ貼付け方法 |
JP2583559B2 (ja) * | 1988-03-07 | 1997-02-19 | 三菱マテリアル株式会社 | ウェーハの接着方法 |
JPH035930A (ja) * | 1989-06-01 | 1991-01-11 | Teijin Ltd | 光記録媒体の貼り合わせ装置 |
US5256599A (en) * | 1992-06-01 | 1993-10-26 | Motorola, Inc. | Semiconductor wafer wax mounting and thinning process |
-
1993
- 1993-09-07 JP JP5222459A patent/JPH0737768A/ja active Pending
- 1993-11-24 US US08/156,920 patent/US5445692A/en not_active Expired - Fee Related
- 1993-11-26 DK DK93119108T patent/DK0600392T3/da active
- 1993-11-26 EP EP93119108A patent/EP0600392B1/de not_active Expired - Lifetime
- 1993-11-26 EP EP98118088A patent/EP0890982A3/de not_active Withdrawn
- 1993-11-26 DE DE69330777T patent/DE69330777T2/de not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
US5445692A (en) | 1995-08-29 |
EP0890982A3 (de) | 1999-03-31 |
EP0600392B1 (de) | 2001-09-19 |
EP0600392A3 (en) | 1994-08-24 |
DE69330777D1 (de) | 2001-10-25 |
JPH0737768A (ja) | 1995-02-07 |
EP0600392A2 (de) | 1994-06-08 |
EP0890982A2 (de) | 1999-01-13 |
DE69330777T2 (de) | 2002-07-04 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
DK0600392T3 (da) | Fremgangsmåde til forstærkning af en halvleder-wafer samt en forstærket halvleder-wafer | |
IT1280041B1 (it) | Procedimento per il tiraggio di un monocristallo di silicio | |
DK0679216T3 (da) | Fremgangsmåde til bestemmelse af borehulsretning | |
FR2701599B1 (fr) | Procédé de croissance d'un semiconducteur composite. | |
IT1243104B (it) | Metodo per la fabbricazione di un semiconduttore. | |
DE69420651D1 (de) | Korrekturstruktur für überlöschte Bits einer integrierten Halbleiterspeicherschaltung | |
FI953159A (fi) | Yksikiteinen pii kvartsialustalla | |
DE69414534D1 (de) | Bonding-Verfahren für Silizium-Wafer | |
DE69330870D1 (de) | Planarisierungsverfahren von einer Halbleitervorrichtung | |
DK73494A (da) | Fremgangsmåde til fremstilling af en armeret betonkonstruktion | |
DK0554846T3 (da) | Fremgangsmåde til fremstilling af lysmodtagende halvlederelementer | |
FI900548A0 (fi) | Betonipilarin valmistusmenetelmä | |
KR900013596A (ko) | 화합물 반도체의 에칭 방법 | |
DK192291A (da) | Fremgangsmaade til fremstilling af cement | |
DE69318271D1 (de) | Verfahren zum Wachstum von Verbundhalbleitern auf einer Siliziumscheibe | |
DE69508273D1 (de) | Verfahren zum ätzen von siliziumnitrid mit verstärkung der kritischen abmessung | |
DK0655099T3 (da) | Fremgangsmåde til opførelse af et anlæg under terræn | |
ITMI932044A1 (it) | Metodo di fabbricazione di un dispositivo a semiconduttore | |
FR2701584B1 (fr) | Procédé de création d'une famille d'unités de communication autonome. | |
ITMI922003A0 (it) | Processo di realizzazione su semiconduttori di regioni impiantate a basso rischio di channeling | |
SU675153A1 (ru) | Арматурный элемент дл железобетонных конструкций | |
SE9103159D0 (sv) | Metod foer avstaandsfixering av armeringsnaet | |
ITMI913097A1 (it) | Metodo per la fabbricazione di un dispositivo a semiconduttore | |
KR920006443U (ko) | 철근 콘크리트용 앵커 | |
KR940023533U (ko) | 웨이퍼 척의 구조 |