DE69925995T8 - Oberflächenemittierende optische Vorrichtung - Google Patents
Oberflächenemittierende optische Vorrichtung Download PDFInfo
- Publication number
- DE69925995T8 DE69925995T8 DE69925995T DE69925995T DE69925995T8 DE 69925995 T8 DE69925995 T8 DE 69925995T8 DE 69925995 T DE69925995 T DE 69925995T DE 69925995 T DE69925995 T DE 69925995T DE 69925995 T8 DE69925995 T8 DE 69925995T8
- Authority
- DE
- Germany
- Prior art keywords
- optical device
- surface emitting
- emitting optical
- optical
- emitting
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 230000003287 optical effect Effects 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/08—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a plurality of light emitting regions, e.g. laterally discontinuous light emitting layer or photoluminescent region integrated within the semiconductor body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/44—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
- H01L33/46—Reflective coating, e.g. dielectric Bragg reflector
- H01L33/465—Reflective coating, e.g. dielectric Bragg reflector with a resonant cavity structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
- H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
- H01S5/18361—Structure of the reflectors, e.g. hybrid mirrors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
- H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
- H01S5/18361—Structure of the reflectors, e.g. hybrid mirrors
- H01S5/18369—Structure of the reflectors, e.g. hybrid mirrors based on dielectric materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
- H01S5/42—Arrays of surface emitting lasers
- H01S5/423—Arrays of surface emitting lasers having a vertical cavity
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
- H01S5/041—Optical pumping
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
- H01S5/323—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
- H01S5/32308—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm
- H01S5/32341—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm blue laser based on GaN or GaP
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Semiconductor Lasers (AREA)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
GBGB9807692.0A GB9807692D0 (en) | 1998-04-14 | 1998-04-14 | Optival devices |
GB9807692 | 1998-04-14 | ||
PCT/GB1999/001130 WO1999053578A1 (en) | 1998-04-14 | 1999-04-14 | Optical devices |
Publications (3)
Publication Number | Publication Date |
---|---|
DE69925995D1 DE69925995D1 (de) | 2005-08-04 |
DE69925995T2 DE69925995T2 (de) | 2006-06-01 |
DE69925995T8 true DE69925995T8 (de) | 2006-10-05 |
Family
ID=10830158
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69925995T Active DE69925995T8 (de) | 1998-04-14 | 1999-04-14 | Oberflächenemittierende optische Vorrichtung |
Country Status (7)
Country | Link |
---|---|
US (2) | US6563141B1 (de) |
EP (1) | EP1072072B8 (de) |
JP (1) | JP2002511659A (de) |
KR (1) | KR20010042718A (de) |
DE (1) | DE69925995T8 (de) |
GB (1) | GB9807692D0 (de) |
WO (1) | WO1999053578A1 (de) |
Families Citing this family (63)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6046465A (en) * | 1998-04-17 | 2000-04-04 | Hewlett-Packard Company | Buried reflectors for light emitters in epitaxial material and method for producing same |
EP1086498A1 (de) * | 1999-03-31 | 2001-03-28 | Osram Opto Semiconductors GmbH & Co. OHG | Optische halbleiterdiode |
KR100700993B1 (ko) | 1999-12-03 | 2007-03-30 | 크리, 인코포레이티드 | 향상된 광 적출 구조체를 갖는 발광 다이오드 및 그 제조 방법 |
DE10026262B4 (de) * | 2000-05-26 | 2005-03-17 | Osram Opto Semiconductors Gmbh | Vertikalresonator-Laserdiode (VCSEL) |
US6764888B2 (en) * | 2000-09-27 | 2004-07-20 | Sensor Electronic Technology, Inc. | Method of producing nitride-based heterostructure devices |
DE10112542B9 (de) * | 2001-03-15 | 2013-01-03 | Osram Opto Semiconductors Gmbh | Strahlungsemittierendes optisches Bauelement |
US6759689B2 (en) * | 2002-08-07 | 2004-07-06 | Shin-Etsu Handotai Co., Ltd. | Light emitting element and method for manufacturing the same |
JP2004153089A (ja) * | 2002-10-31 | 2004-05-27 | Toyoda Gosei Co Ltd | Iii族窒化物系化合物半導体発光素子及びその製造方法 |
US6943377B2 (en) * | 2002-11-21 | 2005-09-13 | Sensor Electronic Technology, Inc. | Light emitting heterostructure |
US20050191777A1 (en) * | 2003-09-22 | 2005-09-01 | National Chung-Hsing University | Method for producing light emitting diode with plated substrate |
JP4164679B2 (ja) * | 2004-02-16 | 2008-10-15 | セイコーエプソン株式会社 | 面発光型半導体レーザ |
KR100683693B1 (ko) * | 2004-11-10 | 2007-02-15 | 삼성에스디아이 주식회사 | 발광 장치 |
TWI240443B (en) * | 2004-12-17 | 2005-09-21 | South Epitaxy Corp | Light-emitting diode and method for manufacturing the same |
US20070096127A1 (en) * | 2005-08-26 | 2007-05-03 | Pattison P M | Semiconductor micro-cavity light emitting diode |
KR100752696B1 (ko) | 2006-02-16 | 2007-08-29 | 삼성전기주식회사 | 수직구조 질화갈륨계 발광다이오드 소자 |
JP2009538536A (ja) | 2006-05-26 | 2009-11-05 | クリー エル イー ディー ライティング ソリューションズ インコーポレイテッド | 固体発光デバイス、および、それを製造する方法 |
TWI300277B (en) * | 2006-06-16 | 2008-08-21 | Uni Light Touchtek Corp | Method for manufacturing gallium nitride light emitting diode devices |
US7915624B2 (en) * | 2006-08-06 | 2011-03-29 | Lightwave Photonics, Inc. | III-nitride light-emitting devices with one or more resonance reflectors and reflective engineered growth templates for such devices, and methods |
TW200828624A (en) * | 2006-12-27 | 2008-07-01 | Epistar Corp | Light-emitting diode and method for manufacturing the same |
KR101337616B1 (ko) * | 2006-12-28 | 2013-12-06 | 서울바이오시스 주식회사 | 다수의 절연층이 적층된 산란 중심을 구비하는 발광 소자제조방법 및 그 발광 소자 |
US7638811B2 (en) * | 2007-03-13 | 2009-12-29 | Cree, Inc. | Graded dielectric layer |
KR100974226B1 (ko) * | 2007-03-23 | 2010-08-06 | 엘지전자 주식회사 | 유전체를 이용한 태양전지의 후면 반사막 및 패시베이션층형성 |
EP1993143A1 (de) * | 2007-05-14 | 2008-11-19 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Halbleiterbauelement, Verfahren zu dessen Herstellung und dessen Verwendung |
TWI359999B (en) * | 2007-07-10 | 2012-03-11 | Hannstar Display Corp | Polarized light-emitting device |
KR101449000B1 (ko) * | 2007-09-06 | 2014-10-13 | 엘지이노텍 주식회사 | 반도체 발광소자 및 그 제조방법 |
TWI370558B (en) * | 2007-11-07 | 2012-08-11 | Ind Tech Res Inst | Light emitting diode and process for fabricating the same |
US8575633B2 (en) * | 2008-12-08 | 2013-11-05 | Cree, Inc. | Light emitting diode with improved light extraction |
US7915629B2 (en) * | 2008-12-08 | 2011-03-29 | Cree, Inc. | Composite high reflectivity layer |
KR101382836B1 (ko) * | 2007-11-23 | 2014-04-08 | 엘지이노텍 주식회사 | 반도체 발광소자 및 그 제조방법 |
WO2009108733A2 (en) | 2008-02-25 | 2009-09-03 | Lightwave Photonics, Inc. | Current-injecting/tunneling light-emitting device and method |
TWI381551B (zh) * | 2008-08-01 | 2013-01-01 | Epistar Corp | 一種包含複合電鍍基板之發光元件 |
TWI373861B (en) * | 2008-12-11 | 2012-10-01 | Nat Univ Tsing Hua | Fabrication method of light emitting element and its light emitting element |
TWI389355B (zh) * | 2009-01-05 | 2013-03-11 | Epistar Corp | 發光半導體裝置 |
KR101563686B1 (ko) * | 2009-01-15 | 2015-10-27 | 삼성전자주식회사 | 반도체 발광소자의 제조방법 |
TWI399871B (zh) * | 2009-02-03 | 2013-06-21 | Huga Optotech Inc | 光電元件及其形成方法 |
TWI385832B (zh) * | 2009-04-15 | 2013-02-11 | Huga Optotech Inc | Light emitting diode structure |
KR101650840B1 (ko) * | 2009-08-26 | 2016-08-24 | 삼성전자주식회사 | 발광소자 및 이의 제조방법 |
US9362459B2 (en) * | 2009-09-02 | 2016-06-07 | United States Department Of Energy | High reflectivity mirrors and method for making same |
US8634218B2 (en) * | 2009-10-06 | 2014-01-21 | Power Integrations, Inc. | Monolithic AC/DC converter for generating DC supply voltage |
KR101654340B1 (ko) * | 2009-12-28 | 2016-09-06 | 서울바이오시스 주식회사 | 발광 다이오드 |
KR101654342B1 (ko) * | 2010-03-31 | 2016-09-06 | 서울바이오시스 주식회사 | 고효율 발광 다이오드 |
CN101859860B (zh) * | 2010-05-04 | 2013-04-10 | 厦门市三安光电科技有限公司 | 具有双反射层的铝镓铟磷系发光二极管的制备方法 |
US9118162B2 (en) * | 2011-01-14 | 2015-08-25 | University Of Central Florida Research Foundation, Inc. | Composite semiconductor light source pumped by a spontaneous light emitter |
DE102011112706B4 (de) * | 2011-09-07 | 2021-09-02 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Optoelektronisches Bauelement |
KR101981119B1 (ko) * | 2011-11-25 | 2019-05-22 | 엘지이노텍 주식회사 | 자외선 반도체 발광 소자 |
KR101363432B1 (ko) * | 2011-12-28 | 2014-02-18 | 전자부품연구원 | 질화물 반도체 발광소자 및 그의 제조 방법 |
WO2013138676A1 (en) * | 2012-03-14 | 2013-09-19 | Robbie Jorgenson | Materials, structures, and methods for optical and electrical iii-nitride semiconductor devices |
KR101303589B1 (ko) * | 2012-07-02 | 2013-09-11 | 전자부품연구원 | 질화물계 반도체 발광 소자 및 그의 제조 방법 |
CN103441202A (zh) * | 2013-08-08 | 2013-12-11 | 华灿光电股份有限公司 | 具有图形化DBR结构的GaN衬底及其制备方法 |
US8860005B1 (en) * | 2013-08-08 | 2014-10-14 | International Business Machines Corporation | Thin light emitting diode and fabrication method |
KR20150064496A (ko) * | 2013-12-03 | 2015-06-11 | 한국전자통신연구원 | 발광 다이오드 및 그 제조방법 |
US9705283B1 (en) | 2014-05-20 | 2017-07-11 | University Of Central Florida Research Foundation, Inc. | Diffused channel semiconductor light sources |
WO2016103835A1 (ja) * | 2014-12-26 | 2016-06-30 | ソニー株式会社 | 光半導体デバイス |
US9865769B2 (en) | 2015-03-23 | 2018-01-09 | International Business Machines Corporation | Back contact LED through spalling |
US10263144B2 (en) | 2015-10-16 | 2019-04-16 | Robbie J. Jorgenson | System and method for light-emitting devices on lattice-matched metal substrates |
KR102383837B1 (ko) | 2016-05-26 | 2022-04-07 | 로비 조젠슨 | 3a족 질화물 성장 시스템 및 방법 |
US10033156B2 (en) | 2016-07-13 | 2018-07-24 | University Of Central Florida Research Foundation, Inc. | Low resistance vertical cavity light source with PNPN blocking |
WO2018013713A2 (en) | 2016-07-13 | 2018-01-18 | University Of Centeral Florida Research Foundation, Inc. | Semiconductor devices with depleted heterojunction current blocking regions |
CN106784217A (zh) * | 2016-12-12 | 2017-05-31 | 上海芯元基半导体科技有限公司 | 复合衬底、半导体器件结构及其制备方法 |
US20190148918A1 (en) * | 2017-11-14 | 2019-05-16 | Lumentum Operations Llc | Configuring an emitter pattern for an emitter array to avoid a potential dislocation line |
US11205734B2 (en) * | 2018-02-22 | 2021-12-21 | Alliance For Sustainable Energy, Llc | Multijunction solar cells with graded buffer Bragg reflectors |
US11245249B2 (en) | 2018-03-01 | 2022-02-08 | Ricoh Company, Ltd. | Reflector, surface emitting laser, method for manufacturing reflector, and method for manufacturing surface emitting laser |
CN109873296B (zh) * | 2019-01-29 | 2020-12-01 | 北京邮电大学 | 一种垂直腔面发射激光器芯片及制作方法 |
Family Cites Families (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5063569A (en) * | 1990-12-19 | 1991-11-05 | At&T Bell Laboratories | Vertical-cavity surface-emitting laser with non-epitaxial multilayered dielectric reflectors located on both surfaces |
JPH06347734A (ja) * | 1993-06-11 | 1994-12-22 | Nec Corp | 面型光スイッチ |
JP3241976B2 (ja) | 1995-10-16 | 2001-12-25 | 株式会社東芝 | 半導体発光素子 |
US5812576A (en) * | 1996-08-26 | 1998-09-22 | Xerox Corporation | Loss-guided semiconductor lasers |
US5828088A (en) | 1996-09-05 | 1998-10-27 | Astropower, Inc. | Semiconductor device structures incorporating "buried" mirrors and/or "buried" metal electrodes |
US6233267B1 (en) | 1998-01-21 | 2001-05-15 | Brown University Research Foundation | Blue/ultraviolet/green vertical cavity surface emitting laser employing lateral edge overgrowth (LEO) technique |
US6046465A (en) | 1998-04-17 | 2000-04-04 | Hewlett-Packard Company | Buried reflectors for light emitters in epitaxial material and method for producing same |
US6160833A (en) | 1998-05-06 | 2000-12-12 | Xerox Corporation | Blue vertical cavity surface emitting laser |
US6320206B1 (en) * | 1999-02-05 | 2001-11-20 | Lumileds Lighting, U.S., Llc | Light emitting devices having wafer bonded aluminum gallium indium nitride structures and mirror stacks |
-
1998
- 1998-04-14 GB GBGB9807692.0A patent/GB9807692D0/en not_active Ceased
-
1999
- 1999-04-14 US US09/673,177 patent/US6563141B1/en not_active Expired - Lifetime
- 1999-04-14 WO PCT/GB1999/001130 patent/WO1999053578A1/en active IP Right Grant
- 1999-04-14 KR KR1020007011439A patent/KR20010042718A/ko active IP Right Grant
- 1999-04-14 EP EP99915932A patent/EP1072072B8/de not_active Expired - Lifetime
- 1999-04-14 JP JP2000544039A patent/JP2002511659A/ja active Pending
- 1999-04-14 DE DE69925995T patent/DE69925995T8/de active Active
-
2003
- 2003-03-10 US US10/384,953 patent/US20030146442A1/en not_active Abandoned
Also Published As
Publication number | Publication date |
---|---|
WO1999053578A1 (en) | 1999-10-21 |
KR20010042718A (ko) | 2001-05-25 |
EP1072072B1 (de) | 2005-06-29 |
US20030146442A1 (en) | 2003-08-07 |
DE69925995D1 (de) | 2005-08-04 |
US6563141B1 (en) | 2003-05-13 |
EP1072072B8 (de) | 2005-08-31 |
GB9807692D0 (en) | 1998-06-10 |
JP2002511659A (ja) | 2002-04-16 |
DE69925995T2 (de) | 2006-06-01 |
EP1072072A1 (de) | 2001-01-31 |
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Legal Events
Date | Code | Title | Description |
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8364 | No opposition during term of opposition |