DE69925547D1 - Herstellung der Endflächen von Laserdioden durch Epitaxie auf Basis von III-V Materialien - Google Patents

Herstellung der Endflächen von Laserdioden durch Epitaxie auf Basis von III-V Materialien

Info

Publication number
DE69925547D1
DE69925547D1 DE69925547T DE69925547T DE69925547D1 DE 69925547 D1 DE69925547 D1 DE 69925547D1 DE 69925547 T DE69925547 T DE 69925547T DE 69925547 T DE69925547 T DE 69925547T DE 69925547 D1 DE69925547 D1 DE 69925547D1
Authority
DE
Germany
Prior art keywords
iii
materials
production
end faces
laser diodes
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69925547T
Other languages
English (en)
Other versions
DE69925547T2 (de
Inventor
Yong Chen
Shih-Yuan Wang
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Avago Technologies International Sales Pte Ltd
Original Assignee
Agilent Technologies Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Agilent Technologies Inc filed Critical Agilent Technologies Inc
Publication of DE69925547D1 publication Critical patent/DE69925547D1/de
Application granted granted Critical
Publication of DE69925547T2 publication Critical patent/DE69925547T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H01S5/323—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/32308—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm
    • H01S5/32341—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm blue laser based on GaN or GaP
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S2304/00—Special growth methods for semiconductor lasers
    • H01S2304/12—Pendeo epitaxial lateral overgrowth [ELOG], e.g. for growing GaN based blue laser diodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/0206—Substrates, e.g. growth, shape, material, removal or bonding
    • H01S5/0213—Sapphire, quartz or diamond based substrates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/223—Buried stripe structure
    • H01S5/2232—Buried stripe structure with inner confining structure between the active layer and the lower electrode
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H01S5/3201—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures incorporating bulkstrain effects, e.g. strain compensation, strain related to polarisation

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)
  • Led Devices (AREA)
DE69925547T 1998-08-27 1999-07-02 Herstellung der Endflächen von Laserdioden durch Epitaxie auf Basis von III-V Materialien Expired - Fee Related DE69925547T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US09/140,976 US6240115B1 (en) 1998-08-27 1998-08-27 Epitaxial facet formation for laser diodes based on III-V material systems
US140976 1998-08-27

Publications (2)

Publication Number Publication Date
DE69925547D1 true DE69925547D1 (de) 2005-07-07
DE69925547T2 DE69925547T2 (de) 2006-02-02

Family

ID=22493618

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69925547T Expired - Fee Related DE69925547T2 (de) 1998-08-27 1999-07-02 Herstellung der Endflächen von Laserdioden durch Epitaxie auf Basis von III-V Materialien

Country Status (4)

Country Link
US (1) US6240115B1 (de)
EP (1) EP0982819B1 (de)
JP (1) JP2000077770A (de)
DE (1) DE69925547T2 (de)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6395618B2 (en) * 1998-07-10 2002-05-28 Stmicroelectronics S.R.L. Method for manufacturing integrated structures including removing a sacrificial region
JP3470623B2 (ja) 1998-11-26 2003-11-25 ソニー株式会社 窒化物系ｉｉｉ−ｖ族化合物半導体の成長方法、半導体装置の製造方法および半導体装置
TW504754B (en) * 2000-03-24 2002-10-01 Sumitomo Chemical Co Group III-V compound semiconductor and method of producing the same
US6627974B2 (en) * 2000-06-19 2003-09-30 Nichia Corporation Nitride semiconductor substrate and method for manufacturing the same, and nitride semiconductor device using nitride semiconductor substrate
US20060284163A1 (en) * 2005-06-15 2006-12-21 Bour David P Single ELOG growth transverse p-n junction nitride semiconductor laser
US20090085055A1 (en) * 2007-09-27 2009-04-02 Hui Peng Method for Growing an Epitaxial Layer
US8986835B2 (en) * 2010-04-05 2015-03-24 Purdue Research Foundation Growth process for gallium nitride porous nanorods
WO2017082126A1 (ja) * 2015-11-12 2017-05-18 株式会社Sumco Ｉｉｉ族窒化物半導体基板の製造方法及びｉｉｉ族窒化物半導体基板

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3352712B2 (ja) 1991-12-18 2002-12-03 浩 天野 窒化ガリウム系半導体素子及びその製造方法
KR19980079320A (ko) 1997-03-24 1998-11-25 기다오까다까시 고품질 쥐에이엔계층의 선택성장방법, 고품질 쥐에이엔계층 성장기판 및 고품질 쥐에이엔계층 성장기판상에 제작하는 반도체디바이스
EP0874405A3 (de) 1997-03-25 2004-09-15 Mitsubishi Cable Industries, Ltd. Element auf Basis von GaN mit niedriger Versetzungsdichte, seine Verwendung und Herstellungsverfahren

Also Published As

Publication number Publication date
EP0982819B1 (de) 2005-06-01
US6240115B1 (en) 2001-05-29
EP0982819A1 (de) 2000-03-01
DE69925547T2 (de) 2006-02-02
JP2000077770A (ja) 2000-03-14

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8327 Change in the person/name/address of the patent owner

Owner name: AVAGO TECHNOLOGIES GENERAL IP ( SINGAPORE) PTE. LT

8339 Ceased/non-payment of the annual fee