DE69902555D1 - Verfahren zur herstellung fehlerfreier siliziumkristalle, welches variable verfahrensbedingungen zulässt - Google Patents

Verfahren zur herstellung fehlerfreier siliziumkristalle, welches variable verfahrensbedingungen zulässt

Info

Publication number
DE69902555D1
DE69902555D1 DE69902555T DE69902555T DE69902555D1 DE 69902555 D1 DE69902555 D1 DE 69902555D1 DE 69902555 T DE69902555 T DE 69902555T DE 69902555 T DE69902555 T DE 69902555T DE 69902555 D1 DE69902555 D1 DE 69902555D1
Authority
DE
Germany
Prior art keywords
process conditions
free silicon
silicon crystals
variable process
allows variable
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69902555T
Other languages
English (en)
Other versions
DE69902555T2 (de
Inventor
J Falster
Vladimir Voronkov
Paoloc O Memc Electronic Mutti
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
SunEdison Inc
Original Assignee
SunEdison Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by SunEdison Inc filed Critical SunEdison Inc
Application granted granted Critical
Publication of DE69902555D1 publication Critical patent/DE69902555D1/de
Publication of DE69902555T2 publication Critical patent/DE69902555T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/20—Controlling or regulating
    • C30B15/203—Controlling or regulating the relationship of pull rate (v) to axial thermal gradient (G)
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/20—Controlling or regulating
    • C30B15/206—Controlling or regulating the thermal history of growing the ingot
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
DE69902555T 1998-10-14 1999-06-25 Verfahren zur herstellung fehlerfreier siliziumkristalle, welches variable verfahrensbedingungen zulässt Expired - Lifetime DE69902555T2 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US10408798P 1998-10-14 1998-10-14
US11762399P 1999-01-28 1999-01-28
PCT/US1999/014287 WO2000022196A1 (en) 1998-10-14 1999-06-25 Process for preparing defect free silicon crystals which allows for variability in process conditions

Publications (2)

Publication Number Publication Date
DE69902555D1 true DE69902555D1 (de) 2002-09-19
DE69902555T2 DE69902555T2 (de) 2002-12-19

Family

ID=26801164

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69902555T Expired - Lifetime DE69902555T2 (de) 1998-10-14 1999-06-25 Verfahren zur herstellung fehlerfreier siliziumkristalle, welches variable verfahrensbedingungen zulässt

Country Status (8)

Country Link
EP (1) EP1127175B1 (de)
JP (2) JP3737364B2 (de)
KR (1) KR100526081B1 (de)
CN (1) CN1296525C (de)
DE (1) DE69902555T2 (de)
MY (1) MY133116A (de)
TW (1) TW538147B (de)
WO (1) WO2000022196A1 (de)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP2295619B1 (de) 2001-01-26 2014-04-23 MEMC Electronic Materials, Inc. Verfahren zur Herstellung von Silizium mit niedriger Defektdichte und mit leerstellendominiertem Kern, der im wesentlichen frei von oxidationsinduzierten Stapelfehlern ist
JP2006045007A (ja) * 2004-08-05 2006-02-16 Komatsu Electronic Metals Co Ltd シリコン単結晶の品質評価方法
KR100709798B1 (ko) * 2004-10-19 2007-04-23 주식회사 실트론 고품질 단결정 성장 방법
US7773458B2 (en) 2007-03-12 2010-08-10 Raytheon Company Systems and methods for detection and analysis of amplitude modulation of underwater sound
CN104711674B (zh) * 2013-12-09 2017-06-06 有研半导体材料有限公司 一种减少直拉单晶硅内部微气孔密度的方法
JP6135818B2 (ja) * 2014-02-24 2017-05-31 信越半導体株式会社 シリコン単結晶製造方法
KR102576552B1 (ko) * 2019-04-18 2023-09-07 글로벌웨이퍼스 씨오., 엘티디. 연속 쵸크랄스키 방법을 사용하여 단결정 실리콘 잉곳을 성장시키기 위한 방법들

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02180789A (ja) * 1989-01-05 1990-07-13 Kawasaki Steel Corp Ｓｉ単結晶の製造方法
DE4414947C2 (de) * 1993-12-16 1998-12-17 Wacker Siltronic Halbleitermat Verfahren zum Ziehen eines Einkristalls aus Silicium
JPH08337490A (ja) * 1995-06-09 1996-12-24 Shin Etsu Handotai Co Ltd 結晶欠陥の少ないシリコン単結晶及びその製造方法
US5779791A (en) * 1996-08-08 1998-07-14 Memc Electronic Materials, Inc. Process for controlling thermal history of Czochralski-grown silicon
SG64470A1 (en) * 1997-02-13 1999-04-27 Samsung Electronics Co Ltd Methods of manufacturing monocrystalline silicon ingots and wafers by controlling pull rate profiles in a hot zone furnace and ingots and wafers manufactured thereby
SG151096A1 (en) * 1997-04-09 2009-04-30 Memc Electronic Materials Low defect density, ideal oxygen precipitating silicon

Also Published As

Publication number Publication date
JP3737364B2 (ja) 2006-01-18
MY133116A (en) 2007-10-31
DE69902555T2 (de) 2002-12-19
CN1296525C (zh) 2007-01-24
KR20010042959A (ko) 2001-05-25
KR100526081B1 (ko) 2005-11-08
EP1127175B1 (de) 2002-08-14
TW538147B (en) 2003-06-21
JP2003517414A (ja) 2003-05-27
WO2000022196A1 (en) 2000-04-20
JP2006036635A (ja) 2006-02-09
EP1127175A1 (de) 2001-08-29
JP4284310B2 (ja) 2009-06-24
CN1304459A (zh) 2001-07-18

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