DE69822632D1 - Resiste mit verbesserter auflösungsinhibierung für die mikrolithographie - Google Patents

Resiste mit verbesserter auflösungsinhibierung für die mikrolithographie

Info

Publication number
DE69822632D1
DE69822632D1 DE69822632T DE69822632T DE69822632D1 DE 69822632 D1 DE69822632 D1 DE 69822632D1 DE 69822632 T DE69822632 T DE 69822632T DE 69822632 T DE69822632 T DE 69822632T DE 69822632 D1 DE69822632 D1 DE 69822632D1
Authority
DE
Germany
Prior art keywords
microlithography
resist
inhibit
improved resolution
resolution
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69822632T
Other languages
English (en)
Other versions
DE69822632T2 (de
Inventor
Arnost Reiser
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
EIDP Inc
Original Assignee
EI Du Pont de Nemours and Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by EI Du Pont de Nemours and Co filed Critical EI Du Pont de Nemours and Co
Application granted granted Critical
Publication of DE69822632D1 publication Critical patent/DE69822632D1/de
Publication of DE69822632T2 publication Critical patent/DE69822632T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/022—Quinonediazides
    • G03F7/023—Macromolecular quinonediazides; Macromolecular additives, e.g. binders
    • G03F7/0233—Macromolecular quinonediazides; Macromolecular additives, e.g. binders characterised by the polymeric binders or the macromolecular additives other than the macromolecular quinonediazides
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/022—Quinonediazides
    • G03F7/023—Macromolecular quinonediazides; Macromolecular additives, e.g. binders
    • G03F7/0233—Macromolecular quinonediazides; Macromolecular additives, e.g. binders characterised by the polymeric binders or the macromolecular additives other than the macromolecular quinonediazides
    • G03F7/0236—Condensation products of carbonyl compounds and phenolic compounds, e.g. novolak resins
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
    • Y10S430/1053—Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
    • Y10S430/1055—Radiation sensitive composition or product or process of making
    • Y10S430/106—Binder containing

Landscapes

  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Materials For Photolithography (AREA)
DE69822632T 1997-07-15 1998-07-14 Resiste mit verbesserter auflösungsinhibierung für die mikrolithographie Expired - Fee Related DE69822632T2 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US5253297P 1997-07-15 1997-07-15
US52532P 1997-07-15
PCT/US1998/014510 WO1999004319A1 (en) 1997-07-15 1998-07-14 Improved dissolution inhibition resists for microlithography

Publications (2)

Publication Number Publication Date
DE69822632D1 true DE69822632D1 (de) 2004-04-29
DE69822632T2 DE69822632T2 (de) 2005-02-17

Family

ID=21978227

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69822632T Expired - Fee Related DE69822632T2 (de) 1997-07-15 1998-07-14 Resiste mit verbesserter auflösungsinhibierung für die mikrolithographie

Country Status (6)

Country Link
US (1) US6319648B1 (de)
EP (1) EP0996870B1 (de)
JP (1) JP3875280B2 (de)
AU (1) AU8400698A (de)
DE (1) DE69822632T2 (de)
WO (1) WO1999004319A1 (de)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
AU2001288865A1 (en) * 2000-09-08 2002-03-22 Shipley Company, L.L.C. Polymers and photoresist compositions comprising electronegative groups
JP3765976B2 (ja) * 2000-09-12 2006-04-12 松下電器産業株式会社 パターン形成材料及びパターン形成方法
JP2004228228A (ja) * 2003-01-21 2004-08-12 Toshiba Corp 形状シミュレーション方法、形状シミュレーションプログラム及びマスクパターン作成方法
JP4572522B2 (ja) * 2003-07-31 2010-11-04 Ｄｉｃ株式会社 エポキシ樹脂組成物、エポキシ樹脂硬化物、及びノボラック樹脂
CN109643063B (zh) * 2016-08-31 2022-07-22 富士胶片株式会社 感光化射线性或感放射线性树脂组合物、图案形成方法及电子器件的制造方法
JP7041756B2 (ja) * 2018-09-28 2022-03-24 富士フイルム株式会社 感活性光線性又は感放射線性樹脂組成物、レジスト膜、パターン形成方法、電子デバイスの製造方法
US11585967B2 (en) * 2020-10-15 2023-02-21 Meta Platforms Technologies LLC Apodization of refractive index profile in volume gratings

Family Cites Families (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4439516A (en) 1982-03-15 1984-03-27 Shipley Company Inc. High temperature positive diazo photoresist processing using polyvinyl phenol
JPS6017739A (ja) * 1983-07-12 1985-01-29 Cosmo Co Ltd 微細加工用感光性レジスト
DE3406927A1 (de) 1984-02-25 1985-08-29 Hoechst Ag, 6230 Frankfurt Strahlungsempfindliches gemisch auf basis von saeurespaltbaren verbindungen
NL8500320A (nl) * 1985-02-06 1986-09-01 Philips Nv Werkwijze voor het vervaardigen van een inrichting en inrichting vervaardigd met de werkwijze.
US4732840A (en) 1985-03-22 1988-03-22 Fuji Photo Film Co., Ltd. Planographic printing plate method using light sensitive material including phenolic resol with dibenzylic ether groups
EP0227487B1 (de) 1985-12-27 1992-07-15 Japan Synthetic Rubber Co., Ltd. Strahlungsempfindliche positiv arbeitende Kunststoffzusammensetzung
EP0255989B1 (de) 1986-08-06 1990-11-22 Ciba-Geigy Ag Negativ-Photoresist auf Basis von Polyphenolen und Epoxidverbindungen oder Vinylethern
US5266440A (en) 1986-12-23 1993-11-30 Shipley Company Inc. Photoresist composition with aromatic novolak binder having a weight-average molecular weight in excess of 1500 Daltons
DE3853114T2 (de) 1987-09-16 1995-06-14 Hoechst Ag Poly(3-mono oder 3,5-disubstituierte acetoxystyrole) und deren Verwendung.
US5084522A (en) 1988-02-05 1992-01-28 University Of Ottawa Styrenic polymer containing pendant reactive tertiary structures and the preparation thereof
US4868256A (en) 1988-08-02 1989-09-19 Hoechst Celanese Process for the production of 3-mono or 3,5-disubstituted-4-acetoxystyrene its polymerization, and hydrolysis
EP0388482B1 (de) 1989-03-20 1994-07-06 Siemens Aktiengesellschaft Lichtempfindliches Gemisch
US5128232A (en) 1989-05-22 1992-07-07 Shiply Company Inc. Photoresist composition with copolymer binder having a major proportion of phenolic units and a minor proportion of non-aromatic cyclic alcoholic units
US5384229A (en) 1992-05-07 1995-01-24 Shipley Company Inc. Photoimageable compositions for electrodeposition
EP0605089B1 (de) 1992-11-03 1999-01-07 International Business Machines Corporation Photolackzusammensetzung
KR960015081A (ko) 1993-07-15 1996-05-22 마쯔모또 에이이찌 화학증폭형 레지스트 조성물
US5824451A (en) * 1994-07-04 1998-10-20 Fuji Photo Film Co., Ltd. Positive photosensitive composition
US5541263A (en) * 1995-03-16 1996-07-30 Shipley Company, L.L.C. Polymer having inert blocking groups
JP3173368B2 (ja) * 1995-04-12 2001-06-04 信越化学工業株式会社 高分子化合物及び化学増幅ポジ型レジスト材料
TW448344B (en) * 1995-10-09 2001-08-01 Shinetsu Chemical Co Chemically amplified positive resist composition
JP3591672B2 (ja) * 1996-02-05 2004-11-24 富士写真フイルム株式会社 ポジ型感光性組成物
DE69612182T3 (de) * 1996-02-09 2005-08-04 Wako Pure Chemical Industries, Ltd. Polymer und Resistmaterial
JP3125678B2 (ja) * 1996-04-08 2001-01-22 信越化学工業株式会社 化学増幅ポジ型レジスト材料
US5853953A (en) * 1996-09-06 1998-12-29 Shipley Company, L.L.C. Polymers and photoresist compositions comprising same

Also Published As

Publication number Publication date
DE69822632T2 (de) 2005-02-17
EP0996870B1 (de) 2004-03-24
AU8400698A (en) 1999-02-10
JP3875280B2 (ja) 2007-01-31
JP2002510406A (ja) 2002-04-02
US6319648B1 (en) 2001-11-20
EP0996870A1 (de) 2000-05-03
WO1999004319A1 (en) 1999-01-28

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee