DE69822632D1 - Resiste mit verbesserter auflösungsinhibierung für die mikrolithographie - Google Patents
Resiste mit verbesserter auflösungsinhibierung für die mikrolithographieInfo
- Publication number
- DE69822632D1 DE69822632D1 DE69822632T DE69822632T DE69822632D1 DE 69822632 D1 DE69822632 D1 DE 69822632D1 DE 69822632 T DE69822632 T DE 69822632T DE 69822632 T DE69822632 T DE 69822632T DE 69822632 D1 DE69822632 D1 DE 69822632D1
- Authority
- DE
- Germany
- Prior art keywords
- microlithography
- resist
- inhibit
- improved resolution
- resolution
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/022—Quinonediazides
- G03F7/023—Macromolecular quinonediazides; Macromolecular additives, e.g. binders
- G03F7/0233—Macromolecular quinonediazides; Macromolecular additives, e.g. binders characterised by the polymeric binders or the macromolecular additives other than the macromolecular quinonediazides
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/022—Quinonediazides
- G03F7/023—Macromolecular quinonediazides; Macromolecular additives, e.g. binders
- G03F7/0233—Macromolecular quinonediazides; Macromolecular additives, e.g. binders characterised by the polymeric binders or the macromolecular additives other than the macromolecular quinonediazides
- G03F7/0236—Condensation products of carbonyl compounds and phenolic compounds, e.g. novolak resins
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
- Y10S430/1053—Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
- Y10S430/1055—Radiation sensitive composition or product or process of making
- Y10S430/106—Binder containing
Landscapes
- Physics & Mathematics (AREA)
- Spectroscopy & Molecular Physics (AREA)
- General Physics & Mathematics (AREA)
- Materials For Photolithography (AREA)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US5253297P | 1997-07-15 | 1997-07-15 | |
US52532P | 1997-07-15 | ||
PCT/US1998/014510 WO1999004319A1 (en) | 1997-07-15 | 1998-07-14 | Improved dissolution inhibition resists for microlithography |
Publications (2)
Publication Number | Publication Date |
---|---|
DE69822632D1 true DE69822632D1 (de) | 2004-04-29 |
DE69822632T2 DE69822632T2 (de) | 2005-02-17 |
Family
ID=21978227
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69822632T Expired - Fee Related DE69822632T2 (de) | 1997-07-15 | 1998-07-14 | Resiste mit verbesserter auflösungsinhibierung für die mikrolithographie |
Country Status (6)
Country | Link |
---|---|
US (1) | US6319648B1 (de) |
EP (1) | EP0996870B1 (de) |
JP (1) | JP3875280B2 (de) |
AU (1) | AU8400698A (de) |
DE (1) | DE69822632T2 (de) |
WO (1) | WO1999004319A1 (de) |
Families Citing this family (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
AU2001288865A1 (en) * | 2000-09-08 | 2002-03-22 | Shipley Company, L.L.C. | Polymers and photoresist compositions comprising electronegative groups |
JP3765976B2 (ja) * | 2000-09-12 | 2006-04-12 | 松下電器産業株式会社 | パターン形成材料及びパターン形成方法 |
JP2004228228A (ja) * | 2003-01-21 | 2004-08-12 | Toshiba Corp | 形状シミュレーション方法、形状シミュレーションプログラム及びマスクパターン作成方法 |
JP4572522B2 (ja) * | 2003-07-31 | 2010-11-04 | Dic株式会社 | エポキシ樹脂組成物、エポキシ樹脂硬化物、及びノボラック樹脂 |
CN109643063B (zh) * | 2016-08-31 | 2022-07-22 | 富士胶片株式会社 | 感光化射线性或感放射线性树脂组合物、图案形成方法及电子器件的制造方法 |
JP7041756B2 (ja) * | 2018-09-28 | 2022-03-24 | 富士フイルム株式会社 | 感活性光線性又は感放射線性樹脂組成物、レジスト膜、パターン形成方法、電子デバイスの製造方法 |
US11585967B2 (en) * | 2020-10-15 | 2023-02-21 | Meta Platforms Technologies LLC | Apodization of refractive index profile in volume gratings |
Family Cites Families (24)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4439516A (en) | 1982-03-15 | 1984-03-27 | Shipley Company Inc. | High temperature positive diazo photoresist processing using polyvinyl phenol |
JPS6017739A (ja) * | 1983-07-12 | 1985-01-29 | Cosmo Co Ltd | 微細加工用感光性レジスト |
DE3406927A1 (de) | 1984-02-25 | 1985-08-29 | Hoechst Ag, 6230 Frankfurt | Strahlungsempfindliches gemisch auf basis von saeurespaltbaren verbindungen |
NL8500320A (nl) * | 1985-02-06 | 1986-09-01 | Philips Nv | Werkwijze voor het vervaardigen van een inrichting en inrichting vervaardigd met de werkwijze. |
US4732840A (en) | 1985-03-22 | 1988-03-22 | Fuji Photo Film Co., Ltd. | Planographic printing plate method using light sensitive material including phenolic resol with dibenzylic ether groups |
EP0227487B1 (de) | 1985-12-27 | 1992-07-15 | Japan Synthetic Rubber Co., Ltd. | Strahlungsempfindliche positiv arbeitende Kunststoffzusammensetzung |
EP0255989B1 (de) | 1986-08-06 | 1990-11-22 | Ciba-Geigy Ag | Negativ-Photoresist auf Basis von Polyphenolen und Epoxidverbindungen oder Vinylethern |
US5266440A (en) | 1986-12-23 | 1993-11-30 | Shipley Company Inc. | Photoresist composition with aromatic novolak binder having a weight-average molecular weight in excess of 1500 Daltons |
DE3853114T2 (de) | 1987-09-16 | 1995-06-14 | Hoechst Ag | Poly(3-mono oder 3,5-disubstituierte acetoxystyrole) und deren Verwendung. |
US5084522A (en) | 1988-02-05 | 1992-01-28 | University Of Ottawa | Styrenic polymer containing pendant reactive tertiary structures and the preparation thereof |
US4868256A (en) | 1988-08-02 | 1989-09-19 | Hoechst Celanese | Process for the production of 3-mono or 3,5-disubstituted-4-acetoxystyrene its polymerization, and hydrolysis |
EP0388482B1 (de) | 1989-03-20 | 1994-07-06 | Siemens Aktiengesellschaft | Lichtempfindliches Gemisch |
US5128232A (en) | 1989-05-22 | 1992-07-07 | Shiply Company Inc. | Photoresist composition with copolymer binder having a major proportion of phenolic units and a minor proportion of non-aromatic cyclic alcoholic units |
US5384229A (en) | 1992-05-07 | 1995-01-24 | Shipley Company Inc. | Photoimageable compositions for electrodeposition |
EP0605089B1 (de) | 1992-11-03 | 1999-01-07 | International Business Machines Corporation | Photolackzusammensetzung |
KR960015081A (ko) | 1993-07-15 | 1996-05-22 | 마쯔모또 에이이찌 | 화학증폭형 레지스트 조성물 |
US5824451A (en) * | 1994-07-04 | 1998-10-20 | Fuji Photo Film Co., Ltd. | Positive photosensitive composition |
US5541263A (en) * | 1995-03-16 | 1996-07-30 | Shipley Company, L.L.C. | Polymer having inert blocking groups |
JP3173368B2 (ja) * | 1995-04-12 | 2001-06-04 | 信越化学工業株式会社 | 高分子化合物及び化学増幅ポジ型レジスト材料 |
TW448344B (en) * | 1995-10-09 | 2001-08-01 | Shinetsu Chemical Co | Chemically amplified positive resist composition |
JP3591672B2 (ja) * | 1996-02-05 | 2004-11-24 | 富士写真フイルム株式会社 | ポジ型感光性組成物 |
DE69612182T3 (de) * | 1996-02-09 | 2005-08-04 | Wako Pure Chemical Industries, Ltd. | Polymer und Resistmaterial |
JP3125678B2 (ja) * | 1996-04-08 | 2001-01-22 | 信越化学工業株式会社 | 化学増幅ポジ型レジスト材料 |
US5853953A (en) * | 1996-09-06 | 1998-12-29 | Shipley Company, L.L.C. | Polymers and photoresist compositions comprising same |
-
1998
- 1998-07-14 JP JP50759699A patent/JP3875280B2/ja not_active Expired - Fee Related
- 1998-07-14 WO PCT/US1998/014510 patent/WO1999004319A1/en active IP Right Grant
- 1998-07-14 DE DE69822632T patent/DE69822632T2/de not_active Expired - Fee Related
- 1998-07-14 US US09/462,963 patent/US6319648B1/en not_active Expired - Fee Related
- 1998-07-14 AU AU84006/98A patent/AU8400698A/en not_active Abandoned
- 1998-07-14 EP EP98934498A patent/EP0996870B1/de not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
DE69822632T2 (de) | 2005-02-17 |
EP0996870B1 (de) | 2004-03-24 |
AU8400698A (en) | 1999-02-10 |
JP3875280B2 (ja) | 2007-01-31 |
JP2002510406A (ja) | 2002-04-02 |
US6319648B1 (en) | 2001-11-20 |
EP0996870A1 (de) | 2000-05-03 |
WO1999004319A1 (en) | 1999-01-28 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8339 | Ceased/non-payment of the annual fee |