DE69801847D1 - Passiv gütegeschalteter mikrolaser mit geregelter polarisation - Google Patents

Passiv gütegeschalteter mikrolaser mit geregelter polarisation

Info

Publication number
DE69801847D1
DE69801847D1 DE69801847T DE69801847T DE69801847D1 DE 69801847 D1 DE69801847 D1 DE 69801847D1 DE 69801847 T DE69801847 T DE 69801847T DE 69801847 T DE69801847 T DE 69801847T DE 69801847 D1 DE69801847 D1 DE 69801847D1
Authority
DE
Germany
Prior art keywords
passively
quality
switched microlaser
polarisation
regulated
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69801847T
Other languages
English (en)
Other versions
DE69801847T2 (de
Inventor
Bernard Ferrand
Bernard Chambaz
Laurent Fulbert
Jean Marty
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Commissariat a lEnergie Atomique et aux Energies Alternatives CEA
Original Assignee
Commissariat a lEnergie Atomique CEA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Commissariat a lEnergie Atomique CEA filed Critical Commissariat a lEnergie Atomique CEA
Publication of DE69801847D1 publication Critical patent/DE69801847D1/de
Application granted granted Critical
Publication of DE69801847T2 publication Critical patent/DE69801847T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/05—Construction or shape of optical resonators; Accommodation of active medium therein; Shape of active medium
    • H01S3/06—Construction or shape of active medium
    • H01S3/0627—Construction or shape of active medium the resonator being monolithic, e.g. microlaser
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/10—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating
    • H01S3/11—Mode locking; Q-switching; Other giant-pulse techniques, e.g. cavity dumping
    • H01S3/1123—Q-switching
    • H01S3/113—Q-switching using intracavity saturable absorbers

Landscapes

  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Optics & Photonics (AREA)
  • Lasers (AREA)
DE69801847T 1997-12-24 1998-12-23 Passiv gütegeschalteter mikrolaser mit geregelter polarisation Expired - Fee Related DE69801847T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FR9716518A FR2773000B1 (fr) 1997-12-24 1997-12-24 Cavite laser a declenchement passif a polarisation controlee, microlaser comprenant cette cavite, et procede de fabrication de ce microlaser
PCT/FR1998/002848 WO1999034486A1 (fr) 1997-12-24 1998-12-23 Microlaser a declenchement passif et a polarisation controlee

Publications (2)

Publication Number Publication Date
DE69801847D1 true DE69801847D1 (de) 2001-10-31
DE69801847T2 DE69801847T2 (de) 2002-05-16

Family

ID=9515141

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69801847T Expired - Fee Related DE69801847T2 (de) 1997-12-24 1998-12-23 Passiv gütegeschalteter mikrolaser mit geregelter polarisation

Country Status (5)

Country Link
US (1) US6973115B1 (de)
EP (1) EP1042847B1 (de)
DE (1) DE69801847T2 (de)
FR (1) FR2773000B1 (de)
WO (1) WO1999034486A1 (de)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5339172B2 (ja) * 2006-11-15 2013-11-13 株式会社メガオプト コヒーレントドップラーライダー
JP2011071323A (ja) * 2009-09-25 2011-04-07 Koito Mfg Co Ltd 半導体素子および半導体素子の製造方法
US9493887B1 (en) 2010-07-08 2016-11-15 Clemson University Research Foundation Heterogeneous single vanadate based crystals for Q-switched lasers and microlasers and method for forming same
US9506166B1 (en) 2010-07-08 2016-11-29 Clemson University Research Foundation Method for forming heterogeneous single garnet based crystals for passive Q-switched lasers and microlasers
US9014228B1 (en) 2010-07-08 2015-04-21 Clemson University Research Foundation Hydrothermal growth of heterogeneous single crystals for solid state laser applications
US9711928B2 (en) 2012-06-22 2017-07-18 Clemson University Research Foundation Single crystals with internal doping with laser ions prepared by a hydrothermal method
US9469915B2 (en) 2012-06-22 2016-10-18 Clemson University Research Foundation Hydrothermal growth of heterogeneous single crystals exhibiting amplified spontaneous emission suppression
JP6281935B2 (ja) * 2013-10-25 2018-02-21 大学共同利用機関法人自然科学研究機構 Ｑスイッチレーザー装置
CN104218443A (zh) * 2014-08-20 2014-12-17 鲍小志 基于二维层状材料的实用化可饱和吸收器件及其制备方法
US10156025B2 (en) 2015-05-04 2018-12-18 University Of South Carolina Monolithic heterogeneous single crystals with multiple regimes for solid state laser applications
JP6583894B2 (ja) * 2018-01-18 2019-10-02 大学共同利用機関法人自然科学研究機構 Ｑスイッチレーザー装置
US20220029377A1 (en) * 2018-12-25 2022-01-27 Sony Group Corporation Laser device

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4786839A (en) * 1985-10-11 1988-11-22 American Telephone And Telegraph Company At&T Bell Laboratories Single crystal YAG color CRT
US5343327A (en) * 1993-11-05 1994-08-30 University Of Central Florida RbNbB2 O6 crystal and its nonlinear optical devices
FR2712743B1 (fr) 1993-11-15 1995-12-15 Commissariat Energie Atomique Cavité laser à déclenchement passif par absorbant saturable et laser incorporant cette cavité.
FR2712742B1 (fr) * 1993-11-15 1995-12-15 Commissariat Energie Atomique Microlaser solide, monolithique, autoaligné, à déclenchement passif par absorbant saturable et son procédé de fabrication.
US5414724A (en) * 1994-01-19 1995-05-09 North China Research Institute Of Electro-Optics Monolithic self Q-switched laser
US5394413A (en) * 1994-02-08 1995-02-28 Massachusetts Institute Of Technology Passively Q-switched picosecond microlaser
FR2729796A1 (fr) 1995-01-24 1996-07-26 Commissariat Energie Atomique Microlaser solide monolithique a declenchement actif par tension de commande faible

Also Published As

Publication number Publication date
FR2773000B1 (fr) 2000-05-12
US6973115B1 (en) 2005-12-06
EP1042847B1 (de) 2001-09-26
EP1042847A1 (de) 2000-10-11
DE69801847T2 (de) 2002-05-16
FR2773000A1 (fr) 1999-06-25
WO1999034486A1 (fr) 1999-07-08

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee