DE69801847D1 - Passiv gütegeschalteter mikrolaser mit geregelter polarisation - Google Patents
Passiv gütegeschalteter mikrolaser mit geregelter polarisationInfo
- Publication number
- DE69801847D1 DE69801847D1 DE69801847T DE69801847T DE69801847D1 DE 69801847 D1 DE69801847 D1 DE 69801847D1 DE 69801847 T DE69801847 T DE 69801847T DE 69801847 T DE69801847 T DE 69801847T DE 69801847 D1 DE69801847 D1 DE 69801847D1
- Authority
- DE
- Germany
- Prior art keywords
- passively
- quality
- switched microlaser
- polarisation
- regulated
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/05—Construction or shape of optical resonators; Accommodation of active medium therein; Shape of active medium
- H01S3/06—Construction or shape of active medium
- H01S3/0627—Construction or shape of active medium the resonator being monolithic, e.g. microlaser
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/10—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating
- H01S3/11—Mode locking; Q-switching; Other giant-pulse techniques, e.g. cavity dumping
- H01S3/1123—Q-switching
- H01S3/113—Q-switching using intracavity saturable absorbers
Landscapes
- Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Engineering & Computer Science (AREA)
- Plasma & Fusion (AREA)
- Optics & Photonics (AREA)
- Lasers (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR9716518A FR2773000B1 (fr) | 1997-12-24 | 1997-12-24 | Cavite laser a declenchement passif a polarisation controlee, microlaser comprenant cette cavite, et procede de fabrication de ce microlaser |
PCT/FR1998/002848 WO1999034486A1 (fr) | 1997-12-24 | 1998-12-23 | Microlaser a declenchement passif et a polarisation controlee |
Publications (2)
Publication Number | Publication Date |
---|---|
DE69801847D1 true DE69801847D1 (de) | 2001-10-31 |
DE69801847T2 DE69801847T2 (de) | 2002-05-16 |
Family
ID=9515141
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69801847T Expired - Fee Related DE69801847T2 (de) | 1997-12-24 | 1998-12-23 | Passiv gütegeschalteter mikrolaser mit geregelter polarisation |
Country Status (5)
Country | Link |
---|---|
US (1) | US6973115B1 (de) |
EP (1) | EP1042847B1 (de) |
DE (1) | DE69801847T2 (de) |
FR (1) | FR2773000B1 (de) |
WO (1) | WO1999034486A1 (de) |
Families Citing this family (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP5339172B2 (ja) * | 2006-11-15 | 2013-11-13 | 株式会社メガオプト | コヒーレントドップラーライダー |
JP2011071323A (ja) * | 2009-09-25 | 2011-04-07 | Koito Mfg Co Ltd | 半導体素子および半導体素子の製造方法 |
US9493887B1 (en) | 2010-07-08 | 2016-11-15 | Clemson University Research Foundation | Heterogeneous single vanadate based crystals for Q-switched lasers and microlasers and method for forming same |
US9506166B1 (en) | 2010-07-08 | 2016-11-29 | Clemson University Research Foundation | Method for forming heterogeneous single garnet based crystals for passive Q-switched lasers and microlasers |
US9014228B1 (en) | 2010-07-08 | 2015-04-21 | Clemson University Research Foundation | Hydrothermal growth of heterogeneous single crystals for solid state laser applications |
US9711928B2 (en) | 2012-06-22 | 2017-07-18 | Clemson University Research Foundation | Single crystals with internal doping with laser ions prepared by a hydrothermal method |
US9469915B2 (en) | 2012-06-22 | 2016-10-18 | Clemson University Research Foundation | Hydrothermal growth of heterogeneous single crystals exhibiting amplified spontaneous emission suppression |
JP6281935B2 (ja) * | 2013-10-25 | 2018-02-21 | 大学共同利用機関法人自然科学研究機構 | Qスイッチレーザー装置 |
CN104218443A (zh) * | 2014-08-20 | 2014-12-17 | 鲍小志 | 基于二维层状材料的实用化可饱和吸收器件及其制备方法 |
US10156025B2 (en) | 2015-05-04 | 2018-12-18 | University Of South Carolina | Monolithic heterogeneous single crystals with multiple regimes for solid state laser applications |
JP6583894B2 (ja) * | 2018-01-18 | 2019-10-02 | 大学共同利用機関法人自然科学研究機構 | Qスイッチレーザー装置 |
US20220029377A1 (en) * | 2018-12-25 | 2022-01-27 | Sony Group Corporation | Laser device |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4786839A (en) * | 1985-10-11 | 1988-11-22 | American Telephone And Telegraph Company At&T Bell Laboratories | Single crystal YAG color CRT |
US5343327A (en) * | 1993-11-05 | 1994-08-30 | University Of Central Florida | RbNbB2 O6 crystal and its nonlinear optical devices |
FR2712743B1 (fr) | 1993-11-15 | 1995-12-15 | Commissariat Energie Atomique | Cavité laser à déclenchement passif par absorbant saturable et laser incorporant cette cavité. |
FR2712742B1 (fr) * | 1993-11-15 | 1995-12-15 | Commissariat Energie Atomique | Microlaser solide, monolithique, autoaligné, à déclenchement passif par absorbant saturable et son procédé de fabrication. |
US5414724A (en) * | 1994-01-19 | 1995-05-09 | North China Research Institute Of Electro-Optics | Monolithic self Q-switched laser |
US5394413A (en) * | 1994-02-08 | 1995-02-28 | Massachusetts Institute Of Technology | Passively Q-switched picosecond microlaser |
FR2729796A1 (fr) | 1995-01-24 | 1996-07-26 | Commissariat Energie Atomique | Microlaser solide monolithique a declenchement actif par tension de commande faible |
-
1997
- 1997-12-24 FR FR9716518A patent/FR2773000B1/fr not_active Expired - Fee Related
-
1998
- 1998-12-23 US US09/582,256 patent/US6973115B1/en not_active Expired - Fee Related
- 1998-12-23 DE DE69801847T patent/DE69801847T2/de not_active Expired - Fee Related
- 1998-12-23 EP EP98963608A patent/EP1042847B1/de not_active Expired - Lifetime
- 1998-12-23 WO PCT/FR1998/002848 patent/WO1999034486A1/fr active IP Right Grant
Also Published As
Publication number | Publication date |
---|---|
FR2773000B1 (fr) | 2000-05-12 |
US6973115B1 (en) | 2005-12-06 |
EP1042847B1 (de) | 2001-09-26 |
EP1042847A1 (de) | 2000-10-11 |
DE69801847T2 (de) | 2002-05-16 |
FR2773000A1 (fr) | 1999-06-25 |
WO1999034486A1 (fr) | 1999-07-08 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8339 | Ceased/non-payment of the annual fee |