DE69800975T2 - Verfahren und Vorrichtung zu Oberflächenbehandlung - Google Patents
Verfahren und Vorrichtung zu OberflächenbehandlungInfo
- Publication number
- DE69800975T2 DE69800975T2 DE69800975T DE69800975T DE69800975T2 DE 69800975 T2 DE69800975 T2 DE 69800975T2 DE 69800975 T DE69800975 T DE 69800975T DE 69800975 T DE69800975 T DE 69800975T DE 69800975 T2 DE69800975 T2 DE 69800975T2
- Authority
- DE
- Germany
- Prior art keywords
- surface treatment
- treatment
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
- C23C16/515—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using pulsed discharges
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Plasma Technology (AREA)
- Chemical Vapour Deposition (AREA)
- Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
- Physical Vapour Deposition (AREA)
- ing And Chemical Polishing (AREA)
- Drying Of Semiconductors (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP00546897A JP4013271B2 (ja) | 1997-01-16 | 1997-01-16 | 物品表面処理方法及び装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
DE69800975D1 DE69800975D1 (de) | 2001-08-02 |
DE69800975T2 true DE69800975T2 (de) | 2002-04-04 |
Family
ID=11612082
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69800975T Expired - Fee Related DE69800975T2 (de) | 1997-01-16 | 1998-01-10 | Verfahren und Vorrichtung zu Oberflächenbehandlung |
Country Status (4)
Country | Link |
---|---|
US (1) | US6165376A (de) |
EP (1) | EP0854205B9 (de) |
JP (1) | JP4013271B2 (de) |
DE (1) | DE69800975T2 (de) |
Families Citing this family (51)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100829288B1 (ko) * | 1998-12-11 | 2008-05-13 | 서페이스 테크놀로지 시스템스 피엘씨 | 플라즈마 처리장치 |
EP1055745A1 (de) * | 1999-05-27 | 2000-11-29 | Sony Corporation | Verfahren und Vorrichtung zur Oberflächenmodifizierung |
DE19957169A1 (de) * | 1999-11-27 | 2001-06-13 | Bosch Gmbh Robert | Plasmaätzverfahren mit gepulster Substratelektrodenleistung |
DE19959603A1 (de) * | 1999-12-10 | 2001-06-13 | Volkswagen Ag | Verfahren zum Beschichten der inneren Oberfläche eines Reaktorgefäßes eines Reaktors |
US7294563B2 (en) | 2000-08-10 | 2007-11-13 | Applied Materials, Inc. | Semiconductor on insulator vertical transistor fabrication and doping process |
US7166524B2 (en) | 2000-08-11 | 2007-01-23 | Applied Materials, Inc. | Method for ion implanting insulator material to reduce dielectric constant |
US6893907B2 (en) | 2002-06-05 | 2005-05-17 | Applied Materials, Inc. | Fabrication of silicon-on-insulator structure using plasma immersion ion implantation |
US7223676B2 (en) | 2002-06-05 | 2007-05-29 | Applied Materials, Inc. | Very low temperature CVD process with independently variable conformality, stress and composition of the CVD layer |
US6939434B2 (en) | 2000-08-11 | 2005-09-06 | Applied Materials, Inc. | Externally excited torroidal plasma source with magnetic control of ion distribution |
US7094316B1 (en) | 2000-08-11 | 2006-08-22 | Applied Materials, Inc. | Externally excited torroidal plasma source |
US7303982B2 (en) | 2000-08-11 | 2007-12-04 | Applied Materials, Inc. | Plasma immersion ion implantation process using an inductively coupled plasma source having low dissociation and low minimum plasma voltage |
US7094670B2 (en) | 2000-08-11 | 2006-08-22 | Applied Materials, Inc. | Plasma immersion ion implantation process |
US7137354B2 (en) | 2000-08-11 | 2006-11-21 | Applied Materials, Inc. | Plasma immersion ion implantation apparatus including a plasma source having low dissociation and low minimum plasma voltage |
US7183177B2 (en) | 2000-08-11 | 2007-02-27 | Applied Materials, Inc. | Silicon-on-insulator wafer transfer method using surface activation plasma immersion ion implantation for wafer-to-wafer adhesion enhancement |
US7465478B2 (en) | 2000-08-11 | 2008-12-16 | Applied Materials, Inc. | Plasma immersion ion implantation process |
US7320734B2 (en) | 2000-08-11 | 2008-01-22 | Applied Materials, Inc. | Plasma immersion ion implantation system including a plasma source having low dissociation and low minimum plasma voltage |
US7430984B2 (en) | 2000-08-11 | 2008-10-07 | Applied Materials, Inc. | Method to drive spatially separate resonant structure with spatially distinct plasma secondaries using a single generator and switching elements |
US7037813B2 (en) | 2000-08-11 | 2006-05-02 | Applied Materials, Inc. | Plasma immersion ion implantation process using a capacitively coupled plasma source having low dissociation and low minimum plasma voltage |
US7288491B2 (en) | 2000-08-11 | 2007-10-30 | Applied Materials, Inc. | Plasma immersion ion implantation process |
US6544895B1 (en) | 2000-08-17 | 2003-04-08 | Micron Technology, Inc. | Methods for use of pulsed voltage in a plasma reactor |
US6485572B1 (en) | 2000-08-28 | 2002-11-26 | Micron Technology, Inc. | Use of pulsed grounding source in a plasma reactor |
US6562190B1 (en) * | 2000-10-06 | 2003-05-13 | Lam Research Corporation | System, apparatus, and method for processing wafer using single frequency RF power in plasma processing chamber |
US6777037B2 (en) * | 2001-02-21 | 2004-08-17 | Hitachi, Ltd. | Plasma processing method and apparatus |
US6531367B2 (en) * | 2001-03-20 | 2003-03-11 | Macronix International Co., Ltd. | Method for forming ultra-shallow junction by boron plasma doping |
US7695590B2 (en) | 2004-03-26 | 2010-04-13 | Applied Materials, Inc. | Chemical vapor deposition plasma reactor having plural ion shower grids |
US7767561B2 (en) | 2004-07-20 | 2010-08-03 | Applied Materials, Inc. | Plasma immersion ion implantation reactor having an ion shower grid |
US8058156B2 (en) | 2004-07-20 | 2011-11-15 | Applied Materials, Inc. | Plasma immersion ion implantation reactor having multiple ion shower grids |
US7666464B2 (en) | 2004-10-23 | 2010-02-23 | Applied Materials, Inc. | RF measurement feedback control and diagnostics for a plasma immersion ion implantation reactor |
US7428915B2 (en) | 2005-04-26 | 2008-09-30 | Applied Materials, Inc. | O-ringless tandem throttle valve for a plasma reactor chamber |
US7312162B2 (en) | 2005-05-17 | 2007-12-25 | Applied Materials, Inc. | Low temperature plasma deposition process for carbon layer deposition |
US7109098B1 (en) | 2005-05-17 | 2006-09-19 | Applied Materials, Inc. | Semiconductor junction formation process including low temperature plasma deposition of an optical absorption layer and high speed optical annealing |
US7422775B2 (en) | 2005-05-17 | 2008-09-09 | Applied Materials, Inc. | Process for low temperature plasma deposition of an optical absorption layer and high speed optical annealing |
KR101214861B1 (ko) * | 2005-07-21 | 2012-12-24 | 주성엔지니어링(주) | 진폭변조를 이용하여 플라즈마를 생성하는 방법 및 이를위한 플라즈마 발생장치 |
US7323401B2 (en) | 2005-08-08 | 2008-01-29 | Applied Materials, Inc. | Semiconductor substrate process using a low temperature deposited carbon-containing hard mask |
US7335611B2 (en) | 2005-08-08 | 2008-02-26 | Applied Materials, Inc. | Copper conductor annealing process employing high speed optical annealing with a low temperature-deposited optical absorber layer |
US7312148B2 (en) | 2005-08-08 | 2007-12-25 | Applied Materials, Inc. | Copper barrier reflow process employing high speed optical annealing |
US7429532B2 (en) | 2005-08-08 | 2008-09-30 | Applied Materials, Inc. | Semiconductor substrate process using an optically writable carbon-containing mask |
US8083961B2 (en) * | 2006-07-31 | 2011-12-27 | Tokyo Electron Limited | Method and system for controlling the uniformity of a ballistic electron beam by RF modulation |
JP5514413B2 (ja) * | 2007-08-17 | 2014-06-04 | 東京エレクトロン株式会社 | プラズマエッチング方法 |
JP4607930B2 (ja) | 2007-09-14 | 2011-01-05 | 株式会社東芝 | プラズマ処理装置およびプラズマ処理方法 |
JP5224837B2 (ja) * | 2008-02-01 | 2013-07-03 | 株式会社東芝 | 基板のプラズマ処理装置及びプラズマ処理方法 |
JP5390846B2 (ja) | 2008-12-09 | 2014-01-15 | 東京エレクトロン株式会社 | プラズマエッチング装置及びプラズマクリーニング方法 |
JP5496568B2 (ja) * | 2009-08-04 | 2014-05-21 | 東京エレクトロン株式会社 | プラズマ処理装置及びプラズマ処理方法 |
JP5542509B2 (ja) * | 2010-04-05 | 2014-07-09 | 株式会社東芝 | プラズマ処理装置およびプラズマ処理方法 |
US9520531B2 (en) * | 2010-07-27 | 2016-12-13 | Amtech Systems, Inc. | Systems and methods for depositing and charging solar cell layers |
US20140057388A1 (en) * | 2010-07-27 | 2014-02-27 | Amtech Systems, Inc. | Systems and Methods for Depositing and Charging Solar Cell Layers |
US8338211B2 (en) * | 2010-07-27 | 2012-12-25 | Amtech Systems, Inc. | Systems and methods for charging solar cell layers |
US10157729B2 (en) | 2012-02-22 | 2018-12-18 | Lam Research Corporation | Soft pulsing |
US9460894B2 (en) | 2013-06-28 | 2016-10-04 | Lam Research Corporation | Controlling ion energy within a plasma chamber |
US10373804B2 (en) * | 2017-02-03 | 2019-08-06 | Applied Materials, Inc. | System for tunable workpiece biasing in a plasma reactor |
JP7262375B2 (ja) * | 2019-11-26 | 2023-04-21 | 東京エレクトロン株式会社 | プラズマ処理方法及びプラズマ処理装置 |
Family Cites Families (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4464223A (en) * | 1983-10-03 | 1984-08-07 | Tegal Corp. | Plasma reactor apparatus and method |
US4764394A (en) * | 1987-01-20 | 1988-08-16 | Wisconsin Alumni Research Foundation | Method and apparatus for plasma source ion implantation |
US4950377A (en) * | 1988-09-23 | 1990-08-21 | Siemens Aktiengesellschaft | Apparatus and method for reactive ion etching |
GB2240114B (en) * | 1990-01-18 | 1993-03-24 | Stc Plc | Film nucleation process |
JP2643535B2 (ja) * | 1990-05-22 | 1997-08-20 | ブラザー工業株式会社 | 鳩目穴かがりミシン |
US5212425A (en) * | 1990-10-10 | 1993-05-18 | Hughes Aircraft Company | Ion implantation and surface processing method and apparatus |
KR100302167B1 (ko) * | 1993-11-05 | 2001-11-22 | 히가시 데쓰로 | 플라즈마처리장치및플라즈마처리방법 |
EP0653501B1 (de) * | 1993-11-11 | 1998-02-04 | Nissin Electric Company, Limited | Plasma-CVD-Verfahren und Vorrichtung |
JPH08255782A (ja) * | 1995-03-16 | 1996-10-01 | Toshiba Corp | プラズマ表面処理装置 |
TW335517B (en) * | 1996-03-01 | 1998-07-01 | Hitachi Ltd | Apparatus and method for processing plasma |
EP0821077A3 (de) * | 1996-06-27 | 2000-09-06 | Nissin Electric Co., Ltd. | Mit einem Kohlenstofffilm beschichteter Gegenstand und Verfahren zu dessen Herstellung |
JP3122618B2 (ja) * | 1996-08-23 | 2001-01-09 | 東京エレクトロン株式会社 | プラズマ処理装置 |
JPH1079372A (ja) * | 1996-09-03 | 1998-03-24 | Matsushita Electric Ind Co Ltd | プラズマ処理方法及びプラズマ処理装置 |
-
1997
- 1997-01-16 JP JP00546897A patent/JP4013271B2/ja not_active Expired - Fee Related
-
1998
- 1998-01-05 US US09/003,035 patent/US6165376A/en not_active Expired - Fee Related
- 1998-01-10 EP EP98100334A patent/EP0854205B9/de not_active Expired - Lifetime
- 1998-01-10 DE DE69800975T patent/DE69800975T2/de not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
JP4013271B2 (ja) | 2007-11-28 |
DE69800975D1 (de) | 2001-08-02 |
JPH10204636A (ja) | 1998-08-04 |
EP0854205B9 (de) | 2002-05-22 |
US6165376A (en) | 2000-12-26 |
EP0854205A1 (de) | 1998-07-22 |
EP0854205B1 (de) | 2001-06-27 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8339 | Ceased/non-payment of the annual fee |