GB2240114B - Film nucleation process - Google Patents

Film nucleation process

Info

Publication number
GB2240114B
GB2240114B GB9001166A GB9001166A GB2240114B GB 2240114 B GB2240114 B GB 2240114B GB 9001166 A GB9001166 A GB 9001166A GB 9001166 A GB9001166 A GB 9001166A GB 2240114 B GB2240114 B GB 2240114B
Authority
GB
United Kingdom
Prior art keywords
nucleation process
film nucleation
film
nucleation
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
GB9001166A
Other versions
GB9001166D0 (en
GB2240114A (en
Inventor
Rudolf August Herbert Heinecke
Ian Paul Llewellyn
Geoffrey Alan Scarsbrook
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
STC PLC
Nortel Networks Optical Components Ltd
Original Assignee
STC PLC
Northern Telecom Europe Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by STC PLC, Northern Telecom Europe Ltd filed Critical STC PLC
Priority to GB9001166A priority Critical patent/GB2240114B/en
Publication of GB9001166D0 publication Critical patent/GB9001166D0/en
Publication of GB2240114A publication Critical patent/GB2240114A/en
Application granted granted Critical
Publication of GB2240114B publication Critical patent/GB2240114B/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/26—Deposition of carbon only
    • C23C16/27—Diamond only
    • C23C16/272—Diamond only using DC, AC or RF discharges
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/02—Pretreatment of the material to be coated
    • C23C16/0227—Pretreatment of the material to be coated by cleaning or etching
    • C23C16/0236—Pretreatment of the material to be coated by cleaning or etching by etching with a reactive gas
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/02—Pretreatment of the material to be coated
    • C23C16/0272—Deposition of sub-layers, e.g. to promote the adhesion of the main coating
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/26—Deposition of carbon only
    • C23C16/27—Diamond only
    • C23C16/277—Diamond only using other elements in the gas phase besides carbon and hydrogen; using other elements besides carbon, hydrogen and oxygen in case of use of combustion torches; using other elements besides carbon, hydrogen and inert gas in case of use of plasma jets
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/515—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using pulsed discharges
GB9001166A 1990-01-18 1990-01-18 Film nucleation process Expired - Fee Related GB2240114B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
GB9001166A GB2240114B (en) 1990-01-18 1990-01-18 Film nucleation process

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB9001166A GB2240114B (en) 1990-01-18 1990-01-18 Film nucleation process

Publications (3)

Publication Number Publication Date
GB9001166D0 GB9001166D0 (en) 1990-06-13
GB2240114A GB2240114A (en) 1991-07-24
GB2240114B true GB2240114B (en) 1993-03-24

Family

ID=10669519

Family Applications (1)

Application Number Title Priority Date Filing Date
GB9001166A Expired - Fee Related GB2240114B (en) 1990-01-18 1990-01-18 Film nucleation process

Country Status (1)

Country Link
GB (1) GB2240114B (en)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB9019219D0 (en) * 1990-09-01 1990-10-17 Atomic Energy Authority Uk Diamond-like carbon coatings
WO1993005207A1 (en) * 1991-09-03 1993-03-18 Chang R P H Method of nucleating diamond and article produced thereby
US5397428A (en) * 1991-12-20 1995-03-14 The University Of North Carolina At Chapel Hill Nucleation enhancement for chemical vapor deposition of diamond
JP2924989B2 (en) * 1992-01-28 1999-07-26 日本特殊陶業株式会社 Diamond film-coated silicon nitride base member and method of manufacturing the same
CA2120175A1 (en) * 1993-04-29 1994-10-30 Louis K. Bigelow Method for making a diamond coated structure
GB9309346D0 (en) * 1993-05-06 1993-06-16 Kobe Steel Europ Ltd Preparation of nucleated silicon surfaces
US6794301B2 (en) 1995-10-13 2004-09-21 Mattson Technology, Inc. Pulsed plasma processing of semiconductor substrates
US6253704B1 (en) 1995-10-13 2001-07-03 Mattson Technology, Inc. Apparatus and method for pulsed plasma processing of a semiconductor substrate
JP4013271B2 (en) * 1997-01-16 2007-11-28 日新電機株式会社 Article surface treatment method and apparatus
DE19844538C2 (en) * 1998-09-29 2002-04-11 Fraunhofer Ges Forschung Process for diamond coating of surfaces
CN114934264A (en) * 2022-05-27 2022-08-23 南方科技大学 High-transmittance wear-resistant light-transmitting material and preparation method and application thereof

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2109012A (en) * 1981-10-21 1983-05-25 Rca Corp Novel and improved diamond like film and process for producing same
GB2128637A (en) * 1982-09-28 1984-05-02 Technion Res & Dev Foundation Depositing a carbon film on a substrate
EP0183254A2 (en) * 1984-11-29 1986-06-04 Matsushita Electric Industrial Co., Ltd. Plasma CVD apparatus and method for forming a diamond-like carbon film
EP0238085A2 (en) * 1986-03-20 1987-09-23 The Perkin-Elmer Corporation Improved diamond-like carbon films and process for production thereof
EP0272418A2 (en) * 1986-12-22 1988-06-29 General Electric Company Apparatus and process to condensate diamond
US4756794A (en) * 1987-08-31 1988-07-12 The United States Of America As Represented By The Secretary Of The Navy Atomic layer etching

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2109012A (en) * 1981-10-21 1983-05-25 Rca Corp Novel and improved diamond like film and process for producing same
GB2128637A (en) * 1982-09-28 1984-05-02 Technion Res & Dev Foundation Depositing a carbon film on a substrate
EP0183254A2 (en) * 1984-11-29 1986-06-04 Matsushita Electric Industrial Co., Ltd. Plasma CVD apparatus and method for forming a diamond-like carbon film
EP0238085A2 (en) * 1986-03-20 1987-09-23 The Perkin-Elmer Corporation Improved diamond-like carbon films and process for production thereof
EP0272418A2 (en) * 1986-12-22 1988-06-29 General Electric Company Apparatus and process to condensate diamond
US4756794A (en) * 1987-08-31 1988-07-12 The United States Of America As Represented By The Secretary Of The Navy Atomic layer etching

Also Published As

Publication number Publication date
GB9001166D0 (en) 1990-06-13
GB2240114A (en) 1991-07-24

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Legal Events

Date Code Title Description
732E Amendments to the register in respect of changes of name or changes affecting rights (sect. 32/1977)
732E Amendments to the register in respect of changes of name or changes affecting rights (sect. 32/1977)
PCNP Patent ceased through non-payment of renewal fee

Effective date: 20000118