DE69738594D1 - Strahlungsbildwandler und dazugehörige Verfahren - Google Patents

Strahlungsbildwandler und dazugehörige Verfahren

Info

Publication number
DE69738594D1
DE69738594D1 DE69738594T DE69738594T DE69738594D1 DE 69738594 D1 DE69738594 D1 DE 69738594D1 DE 69738594 T DE69738594 T DE 69738594T DE 69738594 T DE69738594 T DE 69738594T DE 69738594 D1 DE69738594 D1 DE 69738594D1
Authority
DE
Germany
Prior art keywords
radiation image
associated methods
image converter
converter
methods
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69738594T
Other languages
English (en)
Other versions
DE69738594T2 (de
Inventor
Hui-Chun Liu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
National Research Council of Canada
Original Assignee
National Research Council of Canada
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by National Research Council of Canada filed Critical National Research Council of Canada
Application granted granted Critical
Publication of DE69738594D1 publication Critical patent/DE69738594D1/de
Publication of DE69738594T2 publication Critical patent/DE69738594T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/148—Charge coupled imagers
    • H01L27/14875—Infrared CCD or CID imagers
    • H01L27/14881—Infrared CCD or CID imagers of the hybrid type
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
    • H01L31/035236—Superlattices; Multiple quantum well structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/12—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto
    • H01L31/14—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto the light source or sources being controlled by the semiconductor device sensitive to radiation, e.g. image converters, image amplifiers or image storage devices
    • H01L31/147—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto the light source or sources being controlled by the semiconductor device sensitive to radiation, e.g. image converters, image amplifiers or image storage devices the light sources and the devices sensitive to radiation all being semiconductor devices characterised by potential barriers
    • H01L31/153—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto the light source or sources being controlled by the semiconductor device sensitive to radiation, e.g. image converters, image amplifiers or image storage devices the light sources and the devices sensitive to radiation all being semiconductor devices characterised by potential barriers formed in, or on, a common substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission
    • H01L27/153—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars
    • H01L27/156—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars two-dimensional arrays

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Electromagnetism (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Optics & Photonics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Biophysics (AREA)
  • Light Receiving Elements (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
  • Color Television Image Signal Generators (AREA)
  • Photometry And Measurement Of Optical Pulse Characteristics (AREA)
DE69738594T 1996-07-19 1997-07-17 Bildwandlerpanel und zugehörige verfahren Expired - Lifetime DE69738594T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US2098196P 1996-07-19 1996-07-19
US20981P 1996-07-19

Publications (2)

Publication Number Publication Date
DE69738594D1 true DE69738594D1 (de) 2008-05-08
DE69738594T2 DE69738594T2 (de) 2009-04-16

Family

ID=21801682

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69738594T Expired - Lifetime DE69738594T2 (de) 1996-07-19 1997-07-17 Bildwandlerpanel und zugehörige verfahren

Country Status (4)

Country Link
US (1) US6028323A (de)
EP (1) EP0820106B1 (de)
CA (1) CA2210831C (de)
DE (1) DE69738594T2 (de)

Families Citing this family (37)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6104046A (en) * 1999-03-12 2000-08-15 Sagi-Nahor Ltd. Dual-band infrared sensing material array and focal plane array
US6561693B1 (en) * 2000-09-21 2003-05-13 Lockheed Martin Corporation Remote temperature sensing long wave length modulated focal plane array
CA2365209C (en) 2001-05-09 2012-03-20 National Research Council Of Canada Method for micro-fabricating a pixelless infrared imaging device
AUPS123302A0 (en) * 2002-03-19 2002-04-18 Unisearch Limited Luminance conversion and application to photovoltaic energy conversion
US8328420B2 (en) * 2003-04-22 2012-12-11 Marcio Marc Abreu Apparatus and method for measuring biologic parameters
US10123732B2 (en) 2002-04-22 2018-11-13 Geelux Holdings, Ltd. Apparatus and method for measuring biologic parameters
CA2483195C (en) 2002-04-22 2010-01-26 Marcio Marc Abreu Apparatus and method for measuring biologic parameters
US6829269B2 (en) 2002-05-21 2004-12-07 University Of Massachusetts Systems and methods using phonon mediated intersubband laser
IL155536A0 (en) * 2003-04-21 2003-11-23 Yissum Res Dev Co Voltage tunable integrated infrared imager
CA2447828C (en) * 2003-10-15 2012-07-03 National Research Council Of Canada Wavelength conversion device with avalanche multiplier
US10227063B2 (en) 2004-02-26 2019-03-12 Geelux Holdings, Ltd. Method and apparatus for biological evaluation
WO2006058069A2 (en) * 2004-11-22 2006-06-01 The Trustees Of The Stevens Institute Of Technology Infrared wavelength converter for imaging applications based on quantum well devices
US7196349B2 (en) * 2005-02-17 2007-03-27 Bae Systems Information And Electronic Systems Integration Inc. Resonant cavity enhanced multi-quantum well light modulator and detector
CN100424897C (zh) * 2005-09-28 2008-10-08 中国科学院上海技术物理研究所 氮化镓基红外-可见波长转换探测器
CA2847144A1 (en) 2005-10-24 2007-05-03 Marcio Marc Abreu Apparatus and method for measuring biologic parameters
CN100498288C (zh) * 2006-06-30 2009-06-10 中国科学院上海技术物理研究所 红外-近红外波长上转换探测器
JP4533939B2 (ja) * 2008-04-10 2010-09-01 三菱重工業株式会社 赤外線検出素子、赤外線検出装置及び赤外線検出素子の製造方法
US8476844B2 (en) * 2008-11-21 2013-07-02 B/E Aerospace, Inc. Light emitting diode (LED) lighting system providing precise color control
US8338200B2 (en) 2011-02-02 2012-12-25 L-3 Communications Cincinnati Electronics Corporation Frontside-illuminated inverted quantum well infrared photodetector devices and methods of fabricating the same
US9013620B2 (en) * 2011-04-20 2015-04-21 Trw Automotive U.S. Llc Multiple band imager and method
US8846432B2 (en) 2011-09-13 2014-09-30 L-3 Communications Cincinnati Electronics Corporation Frontside-illuminated barrier infrared photodetector device and methods of fabricating the same
US9450152B2 (en) * 2012-05-29 2016-09-20 Micron Technology, Inc. Solid state transducer dies having reflective features over contacts and associated systems and methods
CN102832289B (zh) * 2012-08-13 2015-10-28 上海交通大学 基于光子频率上转换的太赫兹成像器件、转换方法
CN102820365A (zh) * 2012-08-22 2012-12-12 上海交通大学 半导体红外上转换单光子探测设备及方法
WO2014151655A1 (en) * 2013-03-15 2014-09-25 Northwestern University Systems, apparatuses and methods for converting light wavelengths
CN105814419A (zh) 2013-10-11 2016-07-27 马尔西奥·马克·阿布雷乌 用于生物学评估的方法和设备
JP2017505657A (ja) 2014-01-10 2017-02-23 マーシオ マーク アブリュー Ａｂｒｅｕ脳トンネルでモニタして治療を提供するデバイス
CN106102566A (zh) 2014-01-10 2016-11-09 马尔西奥·马克·阿布雷乌 用于测量abreu脑热通道的红外输出的装置
US10238847B2 (en) 2014-01-22 2019-03-26 Geelux Holdings, Ltd. Devices and methods for transdermal drug delivery
WO2016140965A1 (en) 2015-03-02 2016-09-09 Northwestern University Electroabsorption modulator for depth imaging and other applications
CA2978777A1 (en) 2015-03-10 2016-09-15 Marcio Marc Abreu Devices, apparatuses, systems, and methods for measuring temperature of an abtt terminus
CA3009419A1 (en) * 2016-01-26 2017-08-03 Novadaq Technologies ULC Configurable platform
US11009772B2 (en) 2017-04-24 2021-05-18 Ramot At Tel-Aviv University Ltd. Multi-frequency infrared imaging based on frequency conversion
CN107611281A (zh) * 2017-09-26 2018-01-19 中国科学院长春光学精密机械与物理研究所 一种近红外到可见光上转换器及其制备方法
US11322630B2 (en) * 2019-09-23 2022-05-03 Apple Inc. Monolithic infrared transceiver
US11438991B2 (en) 2020-01-21 2022-09-06 Brightlogic, Inc. Light emitting diode package and electronic display
CN112198133A (zh) * 2020-10-20 2021-01-08 上海洞舟实业有限公司 一种红外激光可视化检测仪的制备方法

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB8829035D0 (en) * 1988-12-13 1989-07-05 Emi Plc Thorn Thermal imaging device
FR2671882B1 (fr) * 1989-12-28 1993-05-28 France Etat Dispositif de conversion d'un rayonnement infrarouge en un autre rayonnement d'energie superieure a celle de ce rayonnement infrarouge.
US5567955A (en) * 1995-05-04 1996-10-22 National Research Council Of Canada Method for infrared thermal imaging using integrated gasa quantum well mid-infrared detector and near-infrared light emitter and SI charge coupled device

Also Published As

Publication number Publication date
DE69738594T2 (de) 2009-04-16
CA2210831A1 (en) 1998-01-19
US6028323A (en) 2000-02-22
EP0820106A2 (de) 1998-01-21
EP0820106B1 (de) 2008-03-26
EP0820106A3 (de) 1998-08-26
CA2210831C (en) 2003-10-28

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