DE69726861D1 - Verfahren zur herstellung einer elektronenemittierenden vorrichtung - Google Patents

Verfahren zur herstellung einer elektronenemittierenden vorrichtung

Info

Publication number
DE69726861D1
DE69726861D1 DE69726861T DE69726861T DE69726861D1 DE 69726861 D1 DE69726861 D1 DE 69726861D1 DE 69726861 T DE69726861 T DE 69726861T DE 69726861 T DE69726861 T DE 69726861T DE 69726861 D1 DE69726861 D1 DE 69726861D1
Authority
DE
Germany
Prior art keywords
electron
producing
emitting device
emitting
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69726861T
Other languages
English (en)
Other versions
DE69726861T2 (de
Inventor
A Haven
Esther Sluzky
M Macaulay
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Inc
Original Assignee
Candescent Intellectual Property Services Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Candescent Intellectual Property Services Inc filed Critical Candescent Intellectual Property Services Inc
Publication of DE69726861D1 publication Critical patent/DE69726861D1/de
Application granted granted Critical
Publication of DE69726861T2 publication Critical patent/DE69726861T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D13/00—Electrophoretic coating characterised by the process
    • C25D13/02—Electrophoretic coating characterised by the process with inorganic material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J9/00—Apparatus or processes specially adapted for the manufacture, installation, removal, maintenance of electric discharge tubes, discharge lamps, or parts thereof; Recovery of material from discharge tubes or lamps
    • H01J9/02—Manufacture of electrodes or electrode systems
    • H01J9/022—Manufacture of electrodes or electrode systems of cold cathodes
    • H01J9/025—Manufacture of electrodes or electrode systems of cold cathodes of field emission cathodes

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • Inorganic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Electrochemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Cold Cathode And The Manufacture (AREA)
  • Cathode-Ray Tubes And Fluorescent Screens For Display (AREA)
DE69726861T 1996-06-07 1997-06-05 Erzeugung einer Schicht, die über Öffnungen verfügt, die unter Nutzung von Partikeln erzeugt werden, welche unter dem Einfluss eines elektrischen Feldes abgeschieden werden Expired - Lifetime DE69726861T2 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US660535 1996-06-07
US08/660,535 US5755944A (en) 1996-06-07 1996-06-07 Formation of layer having openings produced by utilizing particles deposited under influence of electric field
PCT/US1997/009197 WO1997046739A1 (en) 1996-06-07 1997-06-05 Method of fabricating an electron-emitting device

Publications (2)

Publication Number Publication Date
DE69726861D1 true DE69726861D1 (de) 2004-01-29
DE69726861T2 DE69726861T2 (de) 2004-11-04

Family

ID=24649920

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69726861T Expired - Lifetime DE69726861T2 (de) 1996-06-07 1997-06-05 Erzeugung einer Schicht, die über Öffnungen verfügt, die unter Nutzung von Partikeln erzeugt werden, welche unter dem Einfluss eines elektrischen Feldes abgeschieden werden

Country Status (8)

Country Link
US (1) US5755944A (de)
EP (1) EP0909347B1 (de)
JP (1) JP4160635B2 (de)
KR (1) KR100384092B1 (de)
DE (1) DE69726861T2 (de)
HK (1) HK1019462A1 (de)
TW (1) TW402729B (de)
WO (1) WO1997046739A1 (de)

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US6113708A (en) * 1998-05-26 2000-09-05 Candescent Technologies Corporation Cleaning of flat-panel display
US6362097B1 (en) * 1998-07-14 2002-03-26 Applied Komatsu Technlology, Inc. Collimated sputtering of semiconductor and other films
EP1165929A1 (de) 1999-03-03 2002-01-02 Earth Tool Company L.L.C. Vorrichtung und verfahren zum richtungsbohren
JP3595718B2 (ja) * 1999-03-15 2004-12-02 株式会社東芝 表示素子およびその製造方法
JP2000294122A (ja) * 1999-04-08 2000-10-20 Nec Corp 電界放出型冷陰極及び平面ディスプレイの製造方法
US6064145A (en) * 1999-06-04 2000-05-16 Winbond Electronics Corporation Fabrication of field emitting tips
AU6203400A (en) * 1999-06-30 2001-01-31 Penn State Research Foundation, The Electrofluidic assembly of devices and components for micro- and nano-scale integration
US6462467B1 (en) 1999-08-11 2002-10-08 Sony Corporation Method for depositing a resistive material in a field emission cathode
US6342755B1 (en) 1999-08-11 2002-01-29 Sony Corporation Field emission cathodes having an emitting layer comprised of electron emitting particles and insulating particles
US6384520B1 (en) 1999-11-24 2002-05-07 Sony Corporation Cathode structure for planar emitter field emission displays
KR100366705B1 (ko) * 2000-05-26 2003-01-09 삼성에스디아이 주식회사 전기 화학 중합을 이용한 탄소나노튜브 에미터 제조 방법
US6801001B2 (en) * 2000-10-27 2004-10-05 Science Applications International Corporation Method and apparatus for addressing micro-components in a plasma display panel
US6935913B2 (en) * 2000-10-27 2005-08-30 Science Applications International Corporation Method for on-line testing of a light emitting panel
US6764367B2 (en) * 2000-10-27 2004-07-20 Science Applications International Corporation Liquid manufacturing processes for panel layer fabrication
US6796867B2 (en) * 2000-10-27 2004-09-28 Science Applications International Corporation Use of printing and other technology for micro-component placement
US6822626B2 (en) * 2000-10-27 2004-11-23 Science Applications International Corporation Design, fabrication, testing, and conditioning of micro-components for use in a light-emitting panel
US6545422B1 (en) * 2000-10-27 2003-04-08 Science Applications International Corporation Socket for use with a micro-component in a light-emitting panel
US6762566B1 (en) 2000-10-27 2004-07-13 Science Applications International Corporation Micro-component for use in a light-emitting panel
US6570335B1 (en) 2000-10-27 2003-05-27 Science Applications International Corporation Method and system for energizing a micro-component in a light-emitting panel
US7288014B1 (en) 2000-10-27 2007-10-30 Science Applications International Corporation Design, fabrication, testing, and conditioning of micro-components for use in a light-emitting panel
US6620012B1 (en) * 2000-10-27 2003-09-16 Science Applications International Corporation Method for testing a light-emitting panel and the components therein
US6612889B1 (en) 2000-10-27 2003-09-02 Science Applications International Corporation Method for making a light-emitting panel
JP2002208346A (ja) * 2000-11-13 2002-07-26 Sony Corp 冷陰極電界電子放出素子の製造方法
US20050189164A1 (en) * 2004-02-26 2005-09-01 Chang Chi L. Speaker enclosure having outer flared tube
JP2009170280A (ja) * 2008-01-17 2009-07-30 Sony Corp 冷陰極電界電子放出素子の製造方法及び冷陰極電界電子放出表示装置の製造方法
CN102460657B (zh) * 2009-05-08 2014-11-26 1366科技公司 用于选择性移除沉积膜的多孔剥离层
US8196677B2 (en) 2009-08-04 2012-06-12 Pioneer One, Inc. Horizontal drilling system
US9085484B2 (en) 2010-04-30 2015-07-21 Corning Incorporated Anti-glare surface treatment method and articles thereof

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US3196043A (en) * 1961-05-17 1965-07-20 Gen Electric Method for making an electrode structure
US3497929A (en) * 1966-05-31 1970-03-03 Stanford Research Inst Method of making a needle-type electron source
US3595762A (en) * 1968-10-16 1971-07-27 M & T Chemicals Inc Plating process
US3755704A (en) * 1970-02-06 1973-08-28 Stanford Research Inst Field emission cathode structures and devices utilizing such structures
US3665241A (en) * 1970-07-13 1972-05-23 Stanford Research Inst Field ionizer and field emission cathode structures and methods of production
JPS5325632B2 (de) * 1973-03-22 1978-07-27
US3970887A (en) * 1974-06-19 1976-07-20 Micro-Bit Corporation Micro-structure field emission electron source
JPS5436828B2 (de) * 1974-08-16 1979-11-12
FR2623013A1 (fr) * 1987-11-06 1989-05-12 Commissariat Energie Atomique Source d'electrons a cathodes emissives a micropointes et dispositif de visualisation par cathodoluminescence excitee par emission de champ,utilisant cette source
US5053673A (en) * 1988-10-17 1991-10-01 Matsushita Electric Industrial Co., Ltd. Field emission cathodes and method of manufacture thereof
US5170092A (en) * 1989-05-19 1992-12-08 Matsushita Electric Industrial Co., Ltd. Electron-emitting device and process for making the same
EP0416625B1 (de) * 1989-09-07 1996-03-13 Canon Kabushiki Kaisha Elektronemittierende Vorrichtung; Herstellungsverfahren Elektronemittierende Vorrichtung, Herstellungsverfahren derselben und Anzeigegerät und Elektronstrahl- Schreibvorrichtung, welche diese Vorrichtung verwendet.
US5007873A (en) * 1990-02-09 1991-04-16 Motorola, Inc. Non-planar field emission device having an emitter formed with a substantially normal vapor deposition process
JP3007654B2 (ja) * 1990-05-31 2000-02-07 株式会社リコー 電子放出素子の製造方法
FR2663462B1 (fr) * 1990-06-13 1992-09-11 Commissariat Energie Atomique Source d'electrons a cathodes emissives a micropointes.
US5150192A (en) * 1990-09-27 1992-09-22 The United States Of America As Represented By The Secretary Of The Navy Field emitter array
US5150019A (en) * 1990-10-01 1992-09-22 National Semiconductor Corp. Integrated circuit electronic grid device and method
JP2550798B2 (ja) * 1991-04-12 1996-11-06 富士通株式会社 微小冷陰極の製造方法
US5249340A (en) * 1991-06-24 1993-10-05 Motorola, Inc. Field emission device employing a selective electrode deposition method
KR950004516B1 (ko) * 1992-04-29 1995-05-01 삼성전관주식회사 필드 에미션 디스플레이와 그 제조방법
KR950008756B1 (ko) * 1992-11-25 1995-08-04 삼성전관주식회사 실리콘 전자방출소자 및 그의 제조방법
US5564959A (en) * 1993-09-08 1996-10-15 Silicon Video Corporation Use of charged-particle tracks in fabricating gated electron-emitting devices
US5559389A (en) * 1993-09-08 1996-09-24 Silicon Video Corporation Electron-emitting devices having variously constituted electron-emissive elements, including cones or pedestals
US5462467A (en) * 1993-09-08 1995-10-31 Silicon Video Corporation Fabrication of filamentary field-emission device, including self-aligned gate
US5608283A (en) * 1994-06-29 1997-03-04 Candescent Technologies Corporation Electron-emitting devices utilizing electron-emissive particles which typically contain carbon
US5458520A (en) * 1994-12-13 1995-10-17 International Business Machines Corporation Method for producing planar field emission structure
US5676853A (en) * 1996-05-21 1997-10-14 Micron Display Technology, Inc. Mask for forming features on a semiconductor substrate and a method for forming the mask

Also Published As

Publication number Publication date
JP2000512423A (ja) 2000-09-19
KR20000016556A (ko) 2000-03-25
HK1019462A1 (en) 2000-02-11
EP0909347A4 (de) 2002-04-17
US5755944A (en) 1998-05-26
EP0909347A1 (de) 1999-04-21
EP0909347B1 (de) 2003-12-17
WO1997046739A1 (en) 1997-12-11
JP4160635B2 (ja) 2008-10-01
TW402729B (en) 2000-08-21
KR100384092B1 (ko) 2003-08-19
DE69726861T2 (de) 2004-11-04

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8327 Change in the person/name/address of the patent owner

Owner name: CANON K.K., TOKYO, JP

8328 Change in the person/name/address of the agent

Representative=s name: BOEHMERT & BOEHMERT, 28209 BREMEN