DE69724980D1 - Leitende schicht mit antireflexionsoberfläche - Google Patents

Leitende schicht mit antireflexionsoberfläche

Info

Publication number
DE69724980D1
DE69724980D1 DE69724980T DE69724980T DE69724980D1 DE 69724980 D1 DE69724980 D1 DE 69724980D1 DE 69724980 T DE69724980 T DE 69724980T DE 69724980 T DE69724980 T DE 69724980T DE 69724980 D1 DE69724980 D1 DE 69724980D1
Authority
DE
Germany
Prior art keywords
conductive layer
reflection surface
reflection
conductive
layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69724980T
Other languages
English (en)
Other versions
DE69724980T2 (de
Inventor
Shekhar Pramanick
Bhanwar Singh
Che-Hoo Ng
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Advanced Micro Devices Inc
Original Assignee
Advanced Micro Devices Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Advanced Micro Devices Inc filed Critical Advanced Micro Devices Inc
Application granted granted Critical
Publication of DE69724980D1 publication Critical patent/DE69724980D1/de
Publication of DE69724980T2 publication Critical patent/DE69724980T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/76886—Modifying permanently or temporarily the pattern or the conductivity of conductive members, e.g. formation of alloys, reduction of contact resistances
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
    • H01L21/0274—Photolithographic processes
    • H01L21/0276—Photolithographic processes using an anti-reflective coating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/76886—Modifying permanently or temporarily the pattern or the conductivity of conductive members, e.g. formation of alloys, reduction of contact resistances
    • H01L21/76888—By rendering at least a portion of the conductor non conductive, e.g. oxidation
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/942—Masking
    • Y10S438/948—Radiation resist
    • Y10S438/952—Utilizing antireflective layer
DE69724980T 1996-08-28 1997-03-28 Leitende schicht mit antireflexionsoberfläche Expired - Fee Related DE69724980T2 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US08/704,162 US5841179A (en) 1996-08-28 1996-08-28 Conductive layer with anti-reflective surface portion
US704162 1996-08-28
PCT/US1997/005133 WO1998009318A1 (en) 1996-08-28 1997-03-28 Conductive layer with anti-reflective surface portion

Publications (2)

Publication Number Publication Date
DE69724980D1 true DE69724980D1 (de) 2003-10-23
DE69724980T2 DE69724980T2 (de) 2004-07-22

Family

ID=24828348

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69724980T Expired - Fee Related DE69724980T2 (de) 1996-08-28 1997-03-28 Leitende schicht mit antireflexionsoberfläche

Country Status (4)

Country Link
US (2) US5841179A (de)
EP (1) EP0932912B1 (de)
DE (1) DE69724980T2 (de)
WO (1) WO1998009318A1 (de)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100243266B1 (ko) * 1996-10-24 2000-03-02 윤종용 (Ge,Si)Nx반사방지막및이를이용한패턴형성방법
US6107190A (en) * 1997-01-30 2000-08-22 Nec Corporation Method of fabricating semiconductor device
US6121123A (en) * 1997-09-05 2000-09-19 Advanced Micro Devices, Inc. Gate pattern formation using a BARC as a hardmask
KR100269330B1 (ko) * 1998-06-29 2000-12-01 윤종용 반사 방지 캡 및 스페이서를 구비하는 반도체장치, 이의 제조방법 및 이를 이용한 포토레지스트 패턴의 제조방법
US6294465B1 (en) * 1999-10-29 2001-09-25 Agere Systems Guardian Corp. Method for making integrated circuits having features with reduced critical dimensions
AUPR174800A0 (en) * 2000-11-29 2000-12-21 Australian National University, The Semiconductor processing
US6642152B1 (en) 2001-03-19 2003-11-04 Advanced Micro Devices, Inc. Method for ultra thin resist linewidth reduction using implantation
CN1613155B (zh) 2001-11-29 2010-05-05 源太阳能股份有限公司 半导体结构化工艺
US20060254921A1 (en) * 2005-05-10 2006-11-16 Xerox Corporation Anodization process and layers produced therefrom
DE102006041004B4 (de) 2006-08-31 2017-12-21 Advanced Micro Devices, Inc. Technik zum Reduzieren plasmainduzierter Ätzschäden während der Herstellung von Kontaktdurchführungen in Zwischenschichtdielektrika
CN103681248B (zh) * 2012-09-04 2017-02-01 中芯国际集成电路制造(上海)有限公司 一种半导体器件的制造方法
DE102018127447B4 (de) * 2017-11-30 2021-05-06 Taiwan Semiconductor Manufacturing Co., Ltd. Anti-Reflexionsbeschichtung durch Ionenimplantation für lithographische Strukturierung

Family Cites Families (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4268347A (en) * 1979-01-26 1981-05-19 Exxon Research & Engineering Co. Low reflectivity surface formed by particle track etching
US4704367A (en) * 1986-04-21 1987-11-03 Alvis John R Suppression of hillock growth through multiple thermal cycles by argon implantation
US4771010A (en) * 1986-11-21 1988-09-13 Xerox Corporation Energy beam induced layer disordering (EBILD)
US4820611A (en) * 1987-04-24 1989-04-11 Advanced Micro Devices, Inc. Titanium nitride as an antireflection coating on highly reflective layers for photolithography
US5594280A (en) * 1987-10-08 1997-01-14 Anelva Corporation Method of forming a thin film and apparatus of forming a metal thin film utilizing temperature controlling means
US4942451A (en) * 1988-09-27 1990-07-17 Mitsubishi Denki Kabushiki Kaisha Semiconductor device having improved antireflection coating
US4933304A (en) * 1988-11-03 1990-06-12 Sgs-Thomson Microelectronics, Inc. Method for reducing the surface reflectance of a metal layer during semiconductor processing
US4997518A (en) * 1989-03-31 1991-03-05 Oki Electric Industry Co., Ltd. Method for forming an electrode layer by a laser flow technique
US5076674A (en) * 1990-03-09 1991-12-31 Donnelly Corporation Reduced first surface reflectivity electrochromic/electrochemichromic rearview mirror assembly
DE69130595T2 (de) * 1990-07-06 1999-05-27 Tsubochi Kazuo Verfahren zur Herstellung einer Metallschicht
US5139974A (en) * 1991-01-25 1992-08-18 Micron Technology, Inc. Semiconductor manufacturing process for decreasing the optical refelctivity of a metal layer
US5219788A (en) * 1991-02-25 1993-06-15 Ibm Corporation Bilayer metallization cap for photolithography
US5124780A (en) * 1991-06-10 1992-06-23 Micron Technology, Inc. Conductive contact plug and a method of forming a conductive contact plug in an integrated circuit using laser planarization
US5166093A (en) * 1991-07-31 1992-11-24 Micron Technology, Inc. Method to reduce the reflectivity of a semi-conductor metallic surface
DE4231312C2 (de) * 1992-09-18 1996-10-02 Siemens Ag Antireflexschicht und Verfahren zur lithografischen Strukturierung einer Schicht
JPH06302539A (ja) * 1993-04-15 1994-10-28 Toshiba Corp 半導体装置及び半導体装置の製造方法
US5378659A (en) * 1993-07-06 1995-01-03 Motorola Inc. Method and structure for forming an integrated circuit pattern on a semiconductor substrate
US5427666A (en) * 1993-09-09 1995-06-27 Applied Materials, Inc. Method for in-situ cleaning a Ti target in a Ti + TiN coating process
JPH07201700A (ja) * 1993-12-28 1995-08-04 Mitsubishi Electric Corp 半導体装置の製造方法
KR960005761A (ko) * 1994-07-27 1996-02-23 이데이 노부유끼 반도체장치

Also Published As

Publication number Publication date
DE69724980T2 (de) 2004-07-22
WO1998009318A1 (en) 1998-03-05
EP0932912A1 (de) 1999-08-04
US5841179A (en) 1998-11-24
EP0932912B1 (de) 2003-09-17
US6087255A (en) 2000-07-11

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee