DE69707169D1 - Programmierung für nicht-flüchtige Speicherzelle - Google Patents

Programmierung für nicht-flüchtige Speicherzelle

Info

Publication number
DE69707169D1
DE69707169D1 DE69707169T DE69707169T DE69707169D1 DE 69707169 D1 DE69707169 D1 DE 69707169D1 DE 69707169 T DE69707169 T DE 69707169T DE 69707169 T DE69707169 T DE 69707169T DE 69707169 D1 DE69707169 D1 DE 69707169D1
Authority
DE
Germany
Prior art keywords
programming
memory cell
volatile memory
volatile
cell
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69707169T
Other languages
English (en)
Other versions
DE69707169T2 (de
Inventor
Jitendra J Makwana
Darryl F Monteilh
Effiong A Omon
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NXP USA Inc
Original Assignee
Motorola Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Motorola Inc filed Critical Motorola Inc
Publication of DE69707169D1 publication Critical patent/DE69707169D1/de
Application granted granted Critical
Publication of DE69707169T2 publication Critical patent/DE69707169T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/788—Field effect transistors with field effect produced by an insulated gate with floating gate
    • H01L29/7881—Programmable transistors with only two possible levels of programmation
    • H01L29/7884—Programmable transistors with only two possible levels of programmation charging by hot carrier injection
    • H01L29/7885—Hot carrier injection from the channel

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Non-Volatile Memory (AREA)
  • Semiconductor Memories (AREA)
  • Read Only Memory (AREA)
DE69707169T 1996-02-21 1997-02-10 Programmierung für nicht-flüchtige Speicherzelle Expired - Lifetime DE69707169T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US08/604,321 US5703808A (en) 1996-02-21 1996-02-21 Non-volatile memory cell and method of programming

Publications (2)

Publication Number Publication Date
DE69707169D1 true DE69707169D1 (de) 2001-11-15
DE69707169T2 DE69707169T2 (de) 2002-06-06

Family

ID=24419149

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69707169T Expired - Lifetime DE69707169T2 (de) 1996-02-21 1997-02-10 Programmierung für nicht-flüchtige Speicherzelle

Country Status (5)

Country Link
US (2) US5703808A (de)
EP (1) EP0791966B1 (de)
JP (1) JP4083835B2 (de)
KR (1) KR970063753A (de)
DE (1) DE69707169T2 (de)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3211868B2 (ja) * 1996-12-10 2001-09-25 日本電気株式会社 不揮発性半導体メモリの消去方法及び消去装置
KR100505100B1 (ko) * 1998-02-06 2005-10-19 삼성전자주식회사 절전모드상태표시기능을구비한액정표시장치
US6009017A (en) 1998-03-13 1999-12-28 Macronix International Co., Ltd. Floating gate memory with substrate band-to-band tunneling induced hot electron injection
US6255166B1 (en) * 1999-08-05 2001-07-03 Aalo Lsi Design & Device Technology, Inc. Nonvolatile memory cell, method of programming the same and nonvolatile memory array
US6363012B1 (en) 1999-12-27 2002-03-26 Winbond Electronics Corporation Method for improved programming efficiency in flash memory cells
US6850440B2 (en) 1999-12-27 2005-02-01 Winbond Electronics Corporation Method for improved programming efficiency in flash memory cells
US6493269B1 (en) * 2001-05-31 2002-12-10 Sandisk Corporation Dual cell reading and writing technique
US6795349B2 (en) * 2002-02-28 2004-09-21 Sandisk Corporation Method and system for efficiently reading and programming of dual cell memory elements
US6980471B1 (en) * 2004-12-23 2005-12-27 Sandisk Corporation Substrate electron injection techniques for programming non-volatile charge storage memory cells
TWI389321B (zh) * 2008-07-08 2013-03-11 Acer Inc 程式化非揮發性記憶體之方法
CN111261708B (zh) * 2020-02-11 2022-09-23 捷捷微电(上海)科技有限公司 一种半导体功率器件结构

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL7208026A (de) * 1972-06-13 1973-12-17
JPS6146073A (ja) * 1984-08-10 1986-03-06 Hitachi Ltd 半導体集積回路装置
JPS62143476A (ja) * 1985-12-18 1987-06-26 Fujitsu Ltd 半導体記憶装置
JPS63249375A (ja) * 1987-04-06 1988-10-17 Oki Electric Ind Co Ltd 半導体記憶装置のデ−タ消去方法
DE69019872T2 (de) * 1989-03-31 1996-02-22 Philips Electronics Nv Elektrisch programmierbare Halbleiterspeicher.
US5225362A (en) * 1992-06-01 1993-07-06 National Semiconductor Corporation Method of manufacturing a full feature high density EEPROM cell with poly tunnel spacer
US5379253A (en) * 1992-06-01 1995-01-03 National Semiconductor Corporation High density EEPROM cell array with novel programming scheme and method of manufacture
US5293331A (en) * 1992-06-01 1994-03-08 National Semiconductor Corporation High density EEPROM cell with tunnel oxide stripe
US5341342A (en) * 1992-12-18 1994-08-23 National Semiconductor Corporation Flash memory cell structure
JPH06291332A (ja) * 1993-04-06 1994-10-18 Nippon Steel Corp 半導体記憶装置及びその使用方法
US5594685A (en) * 1994-12-16 1997-01-14 National Semiconductor Corporation Method for programming a single EPROM or flash memory cell to store multiple bits of data that utilizes a punchthrough current

Also Published As

Publication number Publication date
US5703808A (en) 1997-12-30
JPH09232455A (ja) 1997-09-05
EP0791966B1 (de) 2001-10-10
KR970063753A (ko) 1997-09-12
DE69707169T2 (de) 2002-06-06
EP0791966A1 (de) 1997-08-27
JP4083835B2 (ja) 2008-04-30
US5886928A (en) 1999-03-23

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Legal Events

Date Code Title Description
8328 Change in the person/name/address of the agent

Free format text: SCHUMACHER & WILLSAU, PATENTANWALTSSOZIETAET, 80335 MUENCHEN

8364 No opposition during term of opposition
8327 Change in the person/name/address of the patent owner

Owner name: FREESCALE SEMICONDUCTOR, INC., AUSTIN, TEX., US