DE69705348D1 - Verfahren zur Gasphasenabscheidung und Vorrichtung zur Abscheidung - Google Patents
Verfahren zur Gasphasenabscheidung und Vorrichtung zur AbscheidungInfo
- Publication number
- DE69705348D1 DE69705348D1 DE69705348T DE69705348T DE69705348D1 DE 69705348 D1 DE69705348 D1 DE 69705348D1 DE 69705348 T DE69705348 T DE 69705348T DE 69705348 T DE69705348 T DE 69705348T DE 69705348 D1 DE69705348 D1 DE 69705348D1
- Authority
- DE
- Germany
- Prior art keywords
- gas phase
- phase separation
- separation method
- gas
- separation
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 238000000034 method Methods 0.000 title 1
- 238000005191 phase separation Methods 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/52—Controlling or regulating the coating process
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/448—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/448—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
- C23C16/452—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials by activating reactive gas streams before their introduction into the reaction chamber, e.g. by ionisation or addition of reactive species
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical Vapour Deposition (AREA)
- Semiconductor Integrated Circuits (AREA)
- Formation Of Insulating Films (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP8100270A JP2907111B2 (ja) | 1996-04-22 | 1996-04-22 | 気相成長方法及びその装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
DE69705348D1 true DE69705348D1 (de) | 2001-08-02 |
DE69705348T2 DE69705348T2 (de) | 2002-03-14 |
Family
ID=14269521
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69705348T Expired - Fee Related DE69705348T2 (de) | 1996-04-22 | 1997-04-15 | Verfahren zur Gasphasenabscheidung und Vorrichtung zur Abscheidung |
Country Status (6)
Country | Link |
---|---|
US (1) | US6060391A (de) |
EP (1) | EP0803588B1 (de) |
JP (1) | JP2907111B2 (de) |
KR (1) | KR100272881B1 (de) |
CA (1) | CA2202697A1 (de) |
DE (1) | DE69705348T2 (de) |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6060755A (en) * | 1999-07-19 | 2000-05-09 | Sharp Laboratories Of America, Inc. | Aluminum-doped zirconium dielectric film transistor structure and deposition method for same |
JP3596416B2 (ja) * | 2000-03-29 | 2004-12-02 | セイコーエプソン株式会社 | セラミックスの製造方法およびその製造装置 |
JP4257485B2 (ja) * | 2000-06-21 | 2009-04-22 | セイコーエプソン株式会社 | セラミックス膜およびその製造方法ならびに半導体装置および圧電素子 |
JP4575984B2 (ja) * | 2009-02-12 | 2010-11-04 | 三井造船株式会社 | 原子層成長装置および薄膜形成方法 |
US9376754B2 (en) | 2009-02-12 | 2016-06-28 | Mitsui Engineering & Shipbuilding | Thin film forming method |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE68907209T2 (de) * | 1988-09-28 | 1994-02-03 | Oki Electric Ind Co Ltd | Verfahren zur herstellung eines supraleitfähigen dünnfilmes. |
US5202283A (en) * | 1991-02-19 | 1993-04-13 | Rockwell International Corporation | Technique for doping MOCVD grown crystalline materials using free radical transport of the dopant species |
JPH088212A (ja) * | 1994-06-22 | 1996-01-12 | Sony Corp | プラズマcvd方法 |
US5576071A (en) * | 1994-11-08 | 1996-11-19 | Micron Technology, Inc. | Method of reducing carbon incorporation into films produced by chemical vapor deposition involving organic precursor compounds |
-
1996
- 1996-04-22 JP JP8100270A patent/JP2907111B2/ja not_active Expired - Lifetime
-
1997
- 1997-04-15 EP EP97106165A patent/EP0803588B1/de not_active Expired - Lifetime
- 1997-04-15 DE DE69705348T patent/DE69705348T2/de not_active Expired - Fee Related
- 1997-04-15 CA CA002202697A patent/CA2202697A1/en not_active Abandoned
- 1997-04-18 KR KR1019970014537A patent/KR100272881B1/ko not_active IP Right Cessation
- 1997-04-21 US US08/844,634 patent/US6060391A/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
DE69705348T2 (de) | 2002-03-14 |
JP2907111B2 (ja) | 1999-06-21 |
JPH09289202A (ja) | 1997-11-04 |
EP0803588A1 (de) | 1997-10-29 |
US6060391A (en) | 2000-05-09 |
EP0803588B1 (de) | 2001-06-27 |
KR970072046A (ko) | 1997-11-07 |
CA2202697A1 (en) | 1997-10-22 |
KR100272881B1 (ko) | 2000-12-01 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8339 | Ceased/non-payment of the annual fee |