DE69624085D1 - Chemisch verstärkte Positiv-Photoresists - Google Patents

Chemisch verstärkte Positiv-Photoresists

Info

Publication number
DE69624085D1
DE69624085D1 DE69624085T DE69624085T DE69624085D1 DE 69624085 D1 DE69624085 D1 DE 69624085D1 DE 69624085 T DE69624085 T DE 69624085T DE 69624085 T DE69624085 T DE 69624085T DE 69624085 D1 DE69624085 D1 DE 69624085D1
Authority
DE
Germany
Prior art keywords
positive photoresists
chemically enhanced
enhanced positive
chemically
photoresists
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69624085T
Other languages
English (en)
Other versions
DE69624085T2 (de
Inventor
James W Thackeray
Peter R Hagerty
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Shipley Co Inc
Rohm and Haas Electronic Materials LLC
Original Assignee
Shipley Co Inc
Shipley Co LLC
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shipley Co Inc, Shipley Co LLC filed Critical Shipley Co Inc
Application granted granted Critical
Publication of DE69624085D1 publication Critical patent/DE69624085D1/de
Publication of DE69624085T2 publication Critical patent/DE69624085T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
    • Y10S430/1053—Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
    • Y10S430/1055—Radiation sensitive composition or product or process of making
    • Y10S430/106—Binder containing
    • Y10S430/111—Polymer of unsaturated acid or ester

Landscapes

  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Materials For Photolithography (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
DE69624085T 1995-12-05 1996-11-12 Chemisch verstärkte Positiv-Photoresists Expired - Fee Related DE69624085T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US08/567,630 US5879856A (en) 1995-12-05 1995-12-05 Chemically amplified positive photoresists

Publications (2)

Publication Number Publication Date
DE69624085D1 true DE69624085D1 (de) 2002-11-07
DE69624085T2 DE69624085T2 (de) 2003-06-18

Family

ID=24267981

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69624085T Expired - Fee Related DE69624085T2 (de) 1995-12-05 1996-11-12 Chemisch verstärkte Positiv-Photoresists

Country Status (5)

Country Link
US (2) US5879856A (de)
EP (1) EP0783136B1 (de)
JP (1) JP3963987B2 (de)
KR (1) KR100500750B1 (de)
DE (1) DE69624085T2 (de)

Families Citing this family (63)

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US6743563B2 (en) * 2001-08-15 2004-06-01 Shipley Company, L.L.C. Photoresist compositions
US7666579B1 (en) * 2001-09-17 2010-02-23 Serenity Technologies, Inc. Method and apparatus for high density storage of analog data in a durable medium
TW200401164A (en) * 2002-03-01 2004-01-16 Shipley Co Llc Photoresist compositions
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US20040131970A1 (en) * 2003-01-07 2004-07-08 Meagley Robert P. Photodefinable polymers for semiconductor applications
US7402373B2 (en) * 2004-02-05 2008-07-22 E.I. Du Pont De Nemours And Company UV radiation blocking protective layers compatible with thick film pastes
US7781141B2 (en) 2004-07-02 2010-08-24 Rohm And Haas Electronic Materials Llc Compositions and processes for immersion lithography
US7175944B2 (en) * 2004-08-31 2007-02-13 Micron Technology, Inc. Prevention of photoresist scumming
JP4789599B2 (ja) * 2004-12-06 2011-10-12 ローム・アンド・ハース・エレクトロニック・マテリアルズ，エル．エル．シー． フォトレジスト組成物
KR101143005B1 (ko) * 2004-12-14 2012-05-08 삼성전자주식회사 마스크 및 이를 이용한 반도체 소자의 제조 방법 및 박막트랜지스터 표시판의 제조 방법
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EP1762895B1 (de) 2005-08-29 2016-02-24 Rohm and Haas Electronic Materials, L.L.C. Antireflex-Zusammensetzungen für Hartmasken
EP1829942B1 (de) 2006-02-28 2012-09-26 Rohm and Haas Electronic Materials, L.L.C. Beschichtungszusammensetzungen zur Verwendung mit einem beschichteten Fotolack
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EP2420891B1 (de) 2006-10-30 2021-06-23 Rohm and Haas Electronic Materials LLC Verfahren für Immersionslithografie
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TWI374478B (en) 2007-02-13 2012-10-11 Rohm & Haas Elect Mat Electronic device manufacture
JP5260094B2 (ja) * 2007-03-12 2013-08-14 ローム・アンド・ハース・エレクトロニック・マテリアルズ，エル．エル．シー． フェノール系ポリマー及びこれを含有するフォトレジスト
EP1998222B1 (de) 2007-04-06 2013-03-20 Rohm and Haas Electronic Materials LLC Beschichtungszusammensetzungen
KR101347284B1 (ko) * 2007-09-28 2014-01-07 삼성전자주식회사 광산발생제 및 이를 포함하는 화학증폭형 레지스트 조성물
JP2009199058A (ja) 2007-11-05 2009-09-03 Rohm & Haas Electronic Materials Llc 液浸リソグラフィーのための組成物および方法
JP2009199061A (ja) 2007-11-12 2009-09-03 Rohm & Haas Electronic Materials Llc オーバーコートされたフォトレジストと共に用いるためのコーティング組成物
JP4577354B2 (ja) * 2007-12-18 2010-11-10 Ｊｓｒ株式会社 ポジ型感放射線性樹脂組成物およびネガ型感放射線性樹脂組成物
US9519216B2 (en) * 2008-02-04 2016-12-13 Fujifilm Electronic Materials U.S.A., Inc. Positive photosensitive resin compositions
EP3051348A1 (de) 2008-11-19 2016-08-03 Rohm and Haas Electronic Materials LLC Zusammensetzungen mit heterosubstituierter carbocyclischer arylkomponente und fotolithografie verfahren
EP2189845B1 (de) 2008-11-19 2017-08-02 Rohm and Haas Electronic Materials LLC Zusammensetzungen und Prozesse für Fotolithographie
EP2784584A1 (de) 2008-11-19 2014-10-01 Rohm and Haas Electronic Materials LLC Zusammensetzungen, die Sulfonamid-Material umfassen, und Verfahren für die Fotolithografie
EP2189846B1 (de) 2008-11-19 2015-04-22 Rohm and Haas Electronic Materials LLC Verfahren für die Fotolithographie unter Verwendung einer Fotolackzusammensetzung beinhaltend ein Blockcopolymer
WO2010075232A1 (en) * 2008-12-23 2010-07-01 Novomer, Inc. Tunable polymer compositions
EP2204392A1 (de) 2008-12-31 2010-07-07 Rohm and Haas Electronic Materials LLC Zusammensetzungen und Verfahren für Fotolithografie
EP2204694A1 (de) 2008-12-31 2010-07-07 Rohm and Haas Electronic Materials LLC Zusammensetzungen und Verfahren für Fotolithografie
TW201106101A (en) * 2009-06-01 2011-02-16 Fujifilm Electronic Materials Chemically amplified positive photoresist composition
TWI468858B (zh) 2009-06-08 2015-01-11 羅門哈斯電子材料有限公司 光微影製程
EP2267532B1 (de) 2009-06-22 2015-08-19 Rohm and Haas Electronic Materials, L.L.C. Fotosäureerzeuger und Fotolacke damit
JP2012136507A (ja) 2010-11-15 2012-07-19 Rohm & Haas Electronic Materials Llc 塩基反応性光酸発生剤およびこれを含むフォトレジスト
JP5961363B2 (ja) 2010-11-15 2016-08-02 ローム アンド ハース エレクトロニック マテリアルズ エルエルシーＲｏｈｍ ａｎｄ Ｈａａｓ Ｅｌｅｃｔｒｏｎｉｃ Ｍａｔｅｒｉａｌｓ ＬＬＣ ラクトン光酸発生剤、これを含む樹脂およびフォトレジスト
JP2012113302A (ja) 2010-11-15 2012-06-14 Rohm & Haas Electronic Materials Llc 塩基反応性成分を含む組成物およびフォトリソグラフィーのための方法
JP6144005B2 (ja) 2010-11-15 2017-06-07 ローム アンド ハース エレクトロニック マテリアルズ エルエルシーＲｏｈｍ ａｎｄ Ｈａａｓ Ｅｌｅｃｔｒｏｎｉｃ Ｍａｔｅｒｉａｌｓ ＬＬＣ 糖成分を含む組成物およびフォトリソグラフィ方法
EP2472320A2 (de) 2010-12-30 2012-07-04 Rohm and Haas Electronic Materials LLC Zusammensetzungen mit basisch-reaktiven Komponenten und Verfahren für Fotolithografie
US9122159B2 (en) 2011-04-14 2015-09-01 Rohm And Haas Electronic Materials Llc Compositions and processes for photolithography
JP5846889B2 (ja) * 2011-12-14 2016-01-20 東京応化工業株式会社 レジスト組成物、レジストパターン形成方法、化合物
TWI527792B (zh) 2012-06-26 2016-04-01 羅門哈斯電子材料有限公司 光酸產生劑、含該光酸產生劑之光阻劑及含該光阻劑之經塗覆物件
US9067909B2 (en) 2013-08-28 2015-06-30 Rohm And Haas Electronic Materials Llc Photoacid generator, photoresist, coated substrate, and method of forming an electronic device
US9046767B2 (en) 2013-10-25 2015-06-02 Rohm And Haas Electronic Materials Llc Photoacid generator, photoresist, coated substrate, and method of forming an electronic device
TWI646397B (zh) 2015-10-31 2019-01-01 南韓商羅門哈斯電子材料韓國公司 與外塗佈光致抗蝕劑一起使用的塗料組合物
US11448964B2 (en) 2016-05-23 2022-09-20 Rohm And Haas Electronic Materials Korea Ltd. Coating compositions for use with an overcoated photoresist
CN109928904A (zh) 2017-11-30 2019-06-25 罗门哈斯电子材料有限责任公司 两性离子化合物和包括其的光致抗蚀剂

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Also Published As

Publication number Publication date
US6300035B1 (en) 2001-10-09
EP0783136A2 (de) 1997-07-09
JP3963987B2 (ja) 2007-08-22
JPH09179303A (ja) 1997-07-11
KR100500750B1 (ko) 2006-01-27
US5879856A (en) 1999-03-09
DE69624085T2 (de) 2003-06-18
KR970049038A (ko) 1997-07-29
EP0783136B1 (de) 2002-10-02
EP0783136A3 (de) 1998-08-19

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