DE69622824D1 - Verfahren und Vorrichtung zum Auflösen einer Oberflächenschicht eines Halbleitersubstrats - Google Patents
Verfahren und Vorrichtung zum Auflösen einer Oberflächenschicht eines HalbleitersubstratsInfo
- Publication number
- DE69622824D1 DE69622824D1 DE69622824T DE69622824T DE69622824D1 DE 69622824 D1 DE69622824 D1 DE 69622824D1 DE 69622824 T DE69622824 T DE 69622824T DE 69622824 T DE69622824 T DE 69622824T DE 69622824 D1 DE69622824 D1 DE 69622824D1
- Authority
- DE
- Germany
- Prior art keywords
- dissolving
- semiconductor substrate
- surface layer
- semiconductor
- layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 239000004065 semiconductor Substances 0.000 title 1
- 239000000758 substrate Substances 0.000 title 1
- 239000002344 surface layer Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02043—Cleaning before device manufacture, i.e. Begin-Of-Line process
- H01L21/02052—Wet cleaning only
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67063—Apparatus for fluid treatment for etching
- H01L21/67075—Apparatus for fluid treatment for etching for wet etching
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Weting (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
- Cleaning Or Drying Semiconductors (AREA)
- Sampling And Sample Adjustment (AREA)
- Drying Of Semiconductors (AREA)
- Formation Of Insulating Films (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP31105095 | 1995-11-29 | ||
JP26416396A JP3415373B2 (ja) | 1995-11-29 | 1996-10-04 | 半導体基板等の表層の溶解方法及び装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
DE69622824D1 true DE69622824D1 (de) | 2002-09-12 |
DE69622824T2 DE69622824T2 (de) | 2003-04-10 |
Family
ID=26546379
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69622824T Expired - Fee Related DE69622824T2 (de) | 1995-11-29 | 1996-11-29 | Verfahren und Vorrichtung zum Auflösen einer Oberflächenschicht eines Halbleitersubstrats |
Country Status (5)
Country | Link |
---|---|
US (1) | US5890501A (de) |
EP (2) | EP1005071A1 (de) |
JP (1) | JP3415373B2 (de) |
KR (1) | KR100237939B1 (de) |
DE (1) | DE69622824T2 (de) |
Families Citing this family (19)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2751953B2 (ja) * | 1995-11-16 | 1998-05-18 | 日本電気株式会社 | ホール内部の汚染分析方法 |
US6448084B1 (en) * | 2000-01-20 | 2002-09-10 | Lsi Logic Corporation | Multiple metal etchant system for integrated circuits |
JP4693268B2 (ja) * | 2001-04-02 | 2011-06-01 | オルガノ株式会社 | 試料水の水質評価方法 |
US20040040660A1 (en) * | 2001-10-03 | 2004-03-04 | Biberger Maximilian Albert | High pressure processing chamber for multiple semiconductor substrates |
US20050227187A1 (en) * | 2002-03-04 | 2005-10-13 | Supercritical Systems Inc. | Ionic fluid in supercritical fluid for semiconductor processing |
US7387868B2 (en) * | 2002-03-04 | 2008-06-17 | Tokyo Electron Limited | Treatment of a dielectric layer using supercritical CO2 |
US20050022850A1 (en) * | 2003-07-29 | 2005-02-03 | Supercritical Systems, Inc. | Regulation of flow of processing chemistry only into a processing chamber |
US20060102282A1 (en) * | 2004-11-15 | 2006-05-18 | Supercritical Systems, Inc. | Method and apparatus for selectively filtering residue from a processing chamber |
US20060185693A1 (en) * | 2005-02-23 | 2006-08-24 | Richard Brown | Cleaning step in supercritical processing |
US20060185694A1 (en) * | 2005-02-23 | 2006-08-24 | Richard Brown | Rinsing step in supercritical processing |
US7550075B2 (en) * | 2005-03-23 | 2009-06-23 | Tokyo Electron Ltd. | Removal of contaminants from a fluid |
US20060226117A1 (en) * | 2005-03-29 | 2006-10-12 | Bertram Ronald T | Phase change based heating element system and method |
US20060225769A1 (en) * | 2005-03-30 | 2006-10-12 | Gentaro Goshi | Isothermal control of a process chamber |
US20060223899A1 (en) * | 2005-03-30 | 2006-10-05 | Hillman Joseph T | Removal of porogens and porogen residues using supercritical CO2 |
US7442636B2 (en) * | 2005-03-30 | 2008-10-28 | Tokyo Electron Limited | Method of inhibiting copper corrosion during supercritical CO2 cleaning |
US20060219268A1 (en) * | 2005-03-30 | 2006-10-05 | Gunilla Jacobson | Neutralization of systemic poisoning in wafer processing |
US20070000519A1 (en) * | 2005-06-30 | 2007-01-04 | Gunilla Jacobson | Removal of residues for low-k dielectric materials in wafer processing |
JP2011095016A (ja) * | 2009-10-28 | 2011-05-12 | Ias Inc | 半導体基板の分析方法 |
JP4897870B2 (ja) * | 2009-12-18 | 2012-03-14 | 株式会社 イアス | 基板分析用ノズル及び基板分析方法 |
Family Cites Families (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5821337A (ja) * | 1981-07-30 | 1983-02-08 | Toshiba Corp | 半導体基板の後処理方法 |
JPS6066825A (ja) * | 1983-09-22 | 1985-04-17 | Toshiba Corp | 半導体装置の製造方法 |
US4749440A (en) * | 1985-08-28 | 1988-06-07 | Fsi Corporation | Gaseous process and apparatus for removing films from substrates |
JPS62163331A (ja) * | 1986-01-14 | 1987-07-20 | Matsushita Electric Ind Co Ltd | ウエツトエツチング方法 |
US5158100A (en) * | 1989-05-06 | 1992-10-27 | Dainippon Screen Mfg. Co., Ltd. | Wafer cleaning method and apparatus therefor |
WO1991006975A1 (en) * | 1989-11-03 | 1991-05-16 | Asm International N.V. | Method for halide etching in the presence of water of semi-conductor substrates |
DE4024576A1 (de) * | 1990-08-02 | 1992-02-06 | Bosch Gmbh Robert | Vorrichtung zum einseitigen aetzen einer halbleiterscheibe |
JP2787788B2 (ja) * | 1990-09-26 | 1998-08-20 | インターナショナル・ビジネス・マシーンズ・コーポレーション | 残留物除去方法 |
FI97920C (fi) * | 1991-02-27 | 1997-03-10 | Okmetic Oy | Tapa puhdistaa puolijohdevalmiste |
-
1996
- 1996-10-04 JP JP26416396A patent/JP3415373B2/ja not_active Expired - Fee Related
- 1996-11-27 US US08/757,398 patent/US5890501A/en not_active Expired - Fee Related
- 1996-11-29 EP EP00100144A patent/EP1005071A1/de not_active Withdrawn
- 1996-11-29 DE DE69622824T patent/DE69622824T2/de not_active Expired - Fee Related
- 1996-11-29 KR KR1019960059237A patent/KR100237939B1/ko not_active IP Right Cessation
- 1996-11-29 EP EP96119198A patent/EP0777265B1/de not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
EP1005071A1 (de) | 2000-05-31 |
JPH09213688A (ja) | 1997-08-15 |
US5890501A (en) | 1999-04-06 |
KR100237939B1 (ko) | 2000-01-15 |
EP0777265A3 (de) | 1998-12-23 |
DE69622824T2 (de) | 2003-04-10 |
EP0777265B1 (de) | 2002-08-07 |
EP0777265A2 (de) | 1997-06-04 |
JP3415373B2 (ja) | 2003-06-09 |
KR970030444A (ko) | 1997-06-26 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8339 | Ceased/non-payment of the annual fee |