DE69619149D1 - Solarzelle aus Silizium und Herstellungsverfahren - Google Patents
Solarzelle aus Silizium und HerstellungsverfahrenInfo
- Publication number
- DE69619149D1 DE69619149D1 DE69619149T DE69619149T DE69619149D1 DE 69619149 D1 DE69619149 D1 DE 69619149D1 DE 69619149 T DE69619149 T DE 69619149T DE 69619149 T DE69619149 T DE 69619149T DE 69619149 D1 DE69619149 D1 DE 69619149D1
- Authority
- DE
- Germany
- Prior art keywords
- solar cell
- manufacturing process
- silicon solar
- silicon
- cell
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title 1
- 238000004519 manufacturing process Methods 0.000 title 1
- 229910052710 silicon Inorganic materials 0.000 title 1
- 239000010703 silicon Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
- H01L31/0264—Inorganic materials
- H01L31/028—Inorganic materials including, apart from doping material or other impurities, only elements of Group IV of the Periodic Table
- H01L31/0288—Inorganic materials including, apart from doping material or other impurities, only elements of Group IV of the Periodic Table characterised by the doping material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/054—Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means
- H01L31/056—Optical elements directly associated or integrated with the PV cell, e.g. light-reflecting means or light-concentrating means the light-reflecting means being of the back surface reflector [BSR] type
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/52—PV systems with concentrators
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Engineering & Computer Science (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- Life Sciences & Earth Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Sustainable Development (AREA)
- Photovoltaic Devices (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP7288095 | 1995-03-30 | ||
JP8013891A JPH08330611A (ja) | 1995-03-30 | 1996-01-30 | シリコン太陽電池セルとその製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
DE69619149D1 true DE69619149D1 (de) | 2002-03-21 |
DE69619149T2 DE69619149T2 (de) | 2002-11-14 |
Family
ID=26349750
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69619149T Expired - Lifetime DE69619149T2 (de) | 1995-03-30 | 1996-03-29 | Solarzelle aus Silizium und Herstellungsverfahren |
Country Status (3)
Country | Link |
---|---|
EP (1) | EP0735597B1 (de) |
JP (1) | JPH08330611A (de) |
DE (1) | DE69619149T2 (de) |
Families Citing this family (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3468670B2 (ja) * | 1997-04-28 | 2003-11-17 | シャープ株式会社 | 太陽電池セルおよびその製造方法 |
FR2783635B1 (fr) * | 1998-09-17 | 2003-06-27 | Saint Louis Inst | Procede de durcissement d'un detecteur en materiau semi-conducteur |
DE60026286T2 (de) | 1999-05-28 | 2006-11-09 | Shin-Etsu Handotai Co., Ltd. | MIT Ga DOTIERTER CZOCHRALSKI-EINKRISTALL UND WAFER UND VERFAHREN ZU DEREN HERSTELLUNG |
JP2003007709A (ja) * | 2001-06-26 | 2003-01-10 | Shin Etsu Handotai Co Ltd | ゲッタリング能力を有するシリコン単結晶ウェーハ及びその製造方法 |
DE102007012277A1 (de) | 2007-03-08 | 2008-09-11 | Gebr. Schmid Gmbh & Co. | Verfahren zur Herstellung einer Solarzelle sowie damit hergestellte Solarzelle |
KR100974226B1 (ko) | 2007-03-23 | 2010-08-06 | 엘지전자 주식회사 | 유전체를 이용한 태양전지의 후면 반사막 및 패시베이션층형성 |
US8481357B2 (en) | 2008-03-08 | 2013-07-09 | Crystal Solar Incorporated | Thin film solar cell with ceramic handling layer |
US20100108130A1 (en) * | 2008-10-31 | 2010-05-06 | Crystal Solar, Inc. | Thin Interdigitated backside contact solar cell and manufacturing process thereof |
US20100108134A1 (en) * | 2008-10-31 | 2010-05-06 | Crystal Solar, Inc. | Thin two sided single crystal solar cell and manufacturing process thereof |
US8241945B2 (en) * | 2010-02-08 | 2012-08-14 | Suniva, Inc. | Solar cells and methods of fabrication thereof |
MY159737A (en) | 2010-09-03 | 2017-01-31 | Gtat Ip Holding Llc | Silicon single crystal doped with gallium, indium, or aluminum |
FR2972298B1 (fr) * | 2011-03-04 | 2015-07-31 | Commissariat Energie Atomique | Procede de metallisation de surfaces texturees |
JP2015519729A (ja) * | 2012-04-02 | 2015-07-09 | ヌソラ インコーポレイテッドnusola Inc. | 光電変換素子及びその製造方法 |
KR101871273B1 (ko) | 2012-05-11 | 2018-08-02 | 엘지전자 주식회사 | 태양 전지 및 이의 제조 방법 |
CN102779903A (zh) * | 2012-08-13 | 2012-11-14 | 苏州盛康光伏科技有限公司 | 太阳能电池的制备方法 |
CN109560145A (zh) * | 2018-12-30 | 2019-04-02 | 无锡赛晶太阳能有限公司 | 一种太阳电池铝背场结构 |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3985579A (en) * | 1975-11-26 | 1976-10-12 | The United States Of America As Represented By The Secretary Of The Air Force | Rib and channel vertical multijunction solar cell |
US4395583A (en) * | 1980-04-30 | 1983-07-26 | Communications Satellite Corporation | Optimized back contact for solar cells |
JPS5976419A (ja) * | 1982-10-26 | 1984-05-01 | Agency Of Ind Science & Technol | p型シリコン膜の製造方法 |
-
1996
- 1996-01-30 JP JP8013891A patent/JPH08330611A/ja active Pending
- 1996-03-29 EP EP96105098A patent/EP0735597B1/de not_active Expired - Lifetime
- 1996-03-29 DE DE69619149T patent/DE69619149T2/de not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
DE69619149T2 (de) | 2002-11-14 |
JPH08330611A (ja) | 1996-12-13 |
EP0735597A2 (de) | 1996-10-02 |
EP0735597B1 (de) | 2002-02-13 |
EP0735597A3 (de) | 1997-06-04 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition |