DE69618734D1 - Verfahren und Vorrichtung zur Herstellung eines amorphen Kohlenstofffilmes - Google Patents

Verfahren und Vorrichtung zur Herstellung eines amorphen Kohlenstofffilmes

Info

Publication number
DE69618734D1
DE69618734D1 DE69618734T DE69618734T DE69618734D1 DE 69618734 D1 DE69618734 D1 DE 69618734D1 DE 69618734 T DE69618734 T DE 69618734T DE 69618734 T DE69618734 T DE 69618734T DE 69618734 D1 DE69618734 D1 DE 69618734D1
Authority
DE
Germany
Prior art keywords
producing
amorphous carbon
carbon film
amorphous
film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69618734T
Other languages
English (en)
Other versions
DE69618734T2 (de
Inventor
Kazuhiko Endo
Toru Tatsumi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp filed Critical NEC Corp
Publication of DE69618734D1 publication Critical patent/DE69618734D1/de
Application granted granted Critical
Publication of DE69618734T2 publication Critical patent/DE69618734T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02115—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material being carbon, e.g. alpha-C, diamond or hydrogen doped carbon
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/24—Deposition of silicon only
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/26—Deposition of carbon only
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
    • H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
    • H01L21/02274—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition in the presence of a plasma [PECVD]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/312—Organic layers, e.g. photoresist
    • H01L21/3127—Layers comprising fluoro (hydro)carbon compounds, e.g. polytetrafluoroethylene
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/905—Cleaning of reaction chamber
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/931—Silicon carbide semiconductor

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Physics & Mathematics (AREA)
  • Organic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Metallurgy (AREA)
  • Mechanical Engineering (AREA)
  • Materials Engineering (AREA)
  • Inorganic Chemistry (AREA)
  • Plasma & Fusion (AREA)
  • Chemical Vapour Deposition (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Carbon And Carbon Compounds (AREA)
DE69618734T 1995-10-12 1996-09-06 Verfahren und Vorrichtung zur Herstellung eines amorphen Kohlenstofffilmes Expired - Lifetime DE69618734T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP7264177A JP2737720B2 (ja) 1995-10-12 1995-10-12 薄膜形成方法及び装置

Publications (2)

Publication Number Publication Date
DE69618734D1 true DE69618734D1 (de) 2002-03-14
DE69618734T2 DE69618734T2 (de) 2002-10-31

Family

ID=17399538

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69618734T Expired - Lifetime DE69618734T2 (de) 1995-10-12 1996-09-06 Verfahren und Vorrichtung zur Herstellung eines amorphen Kohlenstofffilmes

Country Status (6)

Country Link
US (1) US6071797A (de)
EP (1) EP0768388B1 (de)
JP (1) JP2737720B2 (de)
KR (1) KR100235362B1 (de)
CA (1) CA2185203A1 (de)
DE (1) DE69618734T2 (de)

Families Citing this family (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5989998A (en) * 1996-08-29 1999-11-23 Matsushita Electric Industrial Co., Ltd. Method of forming interlayer insulating film
JP3429171B2 (ja) * 1997-11-20 2003-07-22 東京エレクトロン株式会社 プラズマ処理方法及び半導体デバイスの製造方法
JP3574734B2 (ja) * 1997-11-27 2004-10-06 東京エレクトロン株式会社 半導体デバイスの製造方法
US6291334B1 (en) * 1997-12-19 2001-09-18 Applied Materials, Inc. Etch stop layer for dual damascene process
US5900290A (en) * 1998-02-13 1999-05-04 Sharp Microelectronics Technology, Inc. Method of making low-k fluorinated amorphous carbon dielectric
SE9804538D0 (sv) * 1998-12-23 1998-12-23 Jensen Elektronik Ab Gas discharge tube
SG81281A1 (en) * 1999-05-19 2001-06-19 Tokyo Electron Ltd Plasma thin-film deposition method
CN1170003C (zh) * 1999-06-18 2004-10-06 日新电机株式会社 碳膜及其形成方法以及碳膜被覆物品及其制造方法
JP4140674B2 (ja) 1999-09-27 2008-08-27 東京エレクトロン株式会社 多孔質アモルファス膜の観察方法及びその観察装置
AU2905901A (en) * 1999-11-30 2001-06-12 Regents Of The University Of California, The Method for producing fluorinated diamond-like carbon films
US6573030B1 (en) 2000-02-17 2003-06-03 Applied Materials, Inc. Method for depositing an amorphous carbon layer
US6482744B1 (en) * 2000-08-16 2002-11-19 Promos Technologies, Inc. Two step plasma etch using variable electrode spacing
US6368924B1 (en) * 2000-10-31 2002-04-09 Motorola, Inc. Amorphous carbon layer for improved adhesion of photoresist and method of fabrication
JP4742431B2 (ja) * 2001-02-27 2011-08-10 東京エレクトロン株式会社 熱処理装置
US6482331B2 (en) * 2001-04-18 2002-11-19 Taiwan Semiconductor Manufacturing Co., Ltd. Method for preventing contamination in a plasma process chamber
US6797596B2 (en) 2002-08-29 2004-09-28 Micron Technology, Inc. Sacrificial deposition layer as screening material for implants into a wafer during the manufacture of a semiconductor device
US6852139B2 (en) * 2003-07-11 2005-02-08 Excellatron Solid State, Llc System and method of producing thin-film electrolyte
US6886240B2 (en) * 2003-07-11 2005-05-03 Excellatron Solid State, Llc Apparatus for producing thin-film electrolyte
US20050147762A1 (en) * 2003-12-30 2005-07-07 Dubin Valery M. Method to fabricate amorphous electroless metal layers
US20050161060A1 (en) * 2004-01-23 2005-07-28 Johnson Andrew D. Cleaning CVD chambers following deposition of porogen-containing materials
DE102009025971A1 (de) * 2009-06-15 2010-12-16 Aixtron Ag Verfahren zum Einrichten eines Epitaxie-Reaktors
JP5622200B2 (ja) * 2011-02-01 2014-11-12 株式会社アルバック ポリシラン類の処理方法
US10840086B2 (en) * 2018-04-27 2020-11-17 Applied Materials, Inc. Plasma enhanced CVD with periodic high voltage bias
CN110346407B (zh) * 2019-06-20 2021-08-17 杭州电子科技大学 一种适用于纳米级厚度薄膜材料的热导率测试结构
CN111430713A (zh) * 2020-03-31 2020-07-17 天目湖先进储能技术研究院有限公司 一种金属锂负极的制备方法、金属锂负极及电池和应用

Family Cites Families (28)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5582947A (en) * 1981-01-16 1996-12-10 Canon Kabushiki Kaisha Glow discharge process for making photoconductive member
JPS59142839A (ja) * 1983-02-01 1984-08-16 Canon Inc 気相法装置のクリ−ニング方法
DE3442208C3 (de) * 1984-11-19 1998-06-10 Leybold Ag Verfahren und Vorrichtung zum Herstellen harter Kohlenstoffschichten
US4784874A (en) * 1985-02-20 1988-11-15 Canon Kabushiki Kaisha Process for forming deposited film
US4842683A (en) * 1986-12-19 1989-06-27 Applied Materials, Inc. Magnetic field-enhanced plasma etch reactor
JPH0676666B2 (ja) * 1987-02-10 1994-09-28 株式会社半導体エネルギ−研究所 炭素膜作製方法
DE3807112C2 (de) * 1987-03-05 1995-02-02 Minolta Camera Kk Entwickler-Zuführelement
US4830702A (en) * 1987-07-02 1989-05-16 General Electric Company Hollow cathode plasma assisted apparatus and method of diamond synthesis
JPH0382020A (ja) * 1989-08-24 1991-04-08 Mitsubishi Electric Corp 化学気相成長装置
US5084125A (en) * 1989-09-12 1992-01-28 Matsushita Electric Industrial Co., Ltd. Apparatus and method for producing semiconductor substrate
JPH03211279A (ja) * 1990-01-11 1991-09-17 Mitsubishi Electric Corp 化学気相成長装置
JPH04152515A (ja) * 1990-10-16 1992-05-26 Seiko Epson Corp 半導体装置の製造方法
JPH04186615A (ja) * 1990-11-16 1992-07-03 Fujitsu Ltd 半導体製造装置
JP2763203B2 (ja) * 1991-02-18 1998-06-11 三菱電機株式会社 化学気相成長装置
US5198263A (en) * 1991-03-15 1993-03-30 The United States Of America As Represented By The United States Department Of Energy High rate chemical vapor deposition of carbon films using fluorinated gases
US5477975A (en) * 1993-10-15 1995-12-26 Applied Materials Inc Plasma etch apparatus with heated scavenging surfaces
US5212118A (en) * 1991-08-09 1993-05-18 Saxena Arjun N Method for selective chemical vapor deposition of dielectric, semiconductor and conductive films on semiconductor and metallic substrates
JPH0562936A (ja) * 1991-09-03 1993-03-12 Mitsubishi Electric Corp プラズマ処理装置およびプラズマクリーニング方法
JPH05211125A (ja) * 1992-01-30 1993-08-20 Nec Corp 気相成長装置
JPH05217910A (ja) * 1992-02-05 1993-08-27 Seiko Epson Corp 化合物半導体の気相成長装置及び気相成長方法
US5252178A (en) * 1992-06-24 1993-10-12 Texas Instruments Incorporated Multi-zone plasma processing method and apparatus
US5271963A (en) * 1992-11-16 1993-12-21 Materials Research Corporation Elimination of low temperature ammonia salt in TiCl4 NH3 CVD reaction
US5531834A (en) * 1993-07-13 1996-07-02 Tokyo Electron Kabushiki Kaisha Plasma film forming method and apparatus and plasma processing apparatus
US5562776A (en) * 1994-09-19 1996-10-08 Energy Conversion Devices, Inc. Apparatus for microwave plasma enhanced physical/chemical vapor deposition
US5585012A (en) * 1994-12-15 1996-12-17 Applied Materials Inc. Self-cleaning polymer-free top electrode for parallel electrode etch operation
EP0777258A3 (de) * 1995-11-29 1997-09-17 Applied Materials Inc Selbstreinigungsfähiger Plasmabearbeitungsreaktor
US5817534A (en) * 1995-12-04 1998-10-06 Applied Materials, Inc. RF plasma reactor with cleaning electrode for cleaning during processing of semiconductor wafers
US5811356A (en) * 1996-08-19 1998-09-22 Applied Materials, Inc. Reduction in mobile ion and metal contamination by varying season time and bias RF power during chamber cleaning

Also Published As

Publication number Publication date
US6071797A (en) 2000-06-06
EP0768388A3 (de) 1997-05-07
DE69618734T2 (de) 2002-10-31
EP0768388A2 (de) 1997-04-16
CA2185203A1 (en) 1997-04-13
KR100235362B1 (ko) 1999-12-15
JPH09111455A (ja) 1997-04-28
JP2737720B2 (ja) 1998-04-08
KR970021367A (ko) 1997-05-28
EP0768388B1 (de) 2002-01-23

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