DE69607725D1 - Vorrichtung zur Temperaturreglung - Google Patents

Vorrichtung zur Temperaturreglung

Info

Publication number
DE69607725D1
DE69607725D1 DE69607725T DE69607725T DE69607725D1 DE 69607725 D1 DE69607725 D1 DE 69607725D1 DE 69607725 T DE69607725 T DE 69607725T DE 69607725 T DE69607725 T DE 69607725T DE 69607725 D1 DE69607725 D1 DE 69607725D1
Authority
DE
Germany
Prior art keywords
control device
temperature control
temperature
control
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69607725T
Other languages
English (en)
Other versions
DE69607725T2 (de
Inventor
Hideki Kawamura
Hirochika Yamamoto
Yukinobu Nishikawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Air Liquide Japan GK
Original Assignee
Air Liquide Japan GK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Air Liquide Japan GK filed Critical Air Liquide Japan GK
Application granted granted Critical
Publication of DE69607725D1 publication Critical patent/DE69607725D1/de
Publication of DE69607725T2 publication Critical patent/DE69607725T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking
    • H01L21/67248—Temperature monitoring
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/54—Controlling or regulating the coating process
    • C23C14/541—Heating or cooling of the substrates
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/46—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/46—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
    • C23C16/463—Cooling of the substrate
    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05D—SYSTEMS FOR CONTROLLING OR REGULATING NON-ELECTRIC VARIABLES
    • G05D23/00—Control of temperature
    • G05D23/19—Control of temperature characterised by the use of electric means
    • G05D23/1919—Control of temperature characterised by the use of electric means characterised by the type of controller
    • G05D23/192—Control of temperature characterised by the use of electric means characterised by the type of controller using a modification of the thermal impedance between a source and the load
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67103—Apparatus for thermal treatment mainly by conduction

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Chemical & Material Sciences (AREA)
  • Automation & Control Theory (AREA)
  • Drying Of Semiconductors (AREA)
  • Physical Vapour Deposition (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
DE69607725T 1995-12-01 1996-11-21 Vorrichtung zur Temperaturreglung Expired - Fee Related DE69607725T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP33565795A JPH09157846A (ja) 1995-12-01 1995-12-01 温度調節装置

Publications (2)

Publication Number Publication Date
DE69607725D1 true DE69607725D1 (de) 2000-05-18
DE69607725T2 DE69607725T2 (de) 2001-04-26

Family

ID=18291059

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69607725T Expired - Fee Related DE69607725T2 (de) 1995-12-01 1996-11-21 Vorrichtung zur Temperaturreglung

Country Status (4)

Country Link
US (1) US5892207A (de)
EP (1) EP0776988B1 (de)
JP (1) JPH09157846A (de)
DE (1) DE69607725T2 (de)

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US6063710A (en) * 1996-02-26 2000-05-16 Sony Corporation Method and apparatus for dry etching with temperature control
US6054688A (en) * 1997-06-25 2000-04-25 Brooks Automation, Inc. Hybrid heater with ceramic foil serrated plate and gas assist
US6415858B1 (en) * 1997-12-31 2002-07-09 Temptronic Corporation Temperature control system for a workpiece chuck
US7244677B2 (en) 1998-02-04 2007-07-17 Semitool. Inc. Method for filling recessed micro-structures with metallization in the production of a microelectronic device
US6072163A (en) * 1998-03-05 2000-06-06 Fsi International Inc. Combination bake/chill apparatus incorporating low thermal mass, thermally conductive bakeplate
TWI223678B (en) * 1998-03-20 2004-11-11 Semitool Inc Process for applying a metal structure to a workpiece, the treated workpiece and a solution for electroplating copper
US6565729B2 (en) * 1998-03-20 2003-05-20 Semitool, Inc. Method for electrochemically depositing metal on a semiconductor workpiece
US6433314B1 (en) * 1998-04-08 2002-08-13 Applied Materials, Inc. Direct temperature control for a component of a substrate processing chamber
US6497801B1 (en) * 1998-07-10 2002-12-24 Semitool Inc Electroplating apparatus with segmented anode array
US6169274B1 (en) * 1999-03-01 2001-01-02 Tokyo Electron Ltd. Heat treatment apparatus and method, detecting temperatures at plural positions each different in depth in holding plate, and estimating temperature of surface of plate corresponding to detected result
US6368475B1 (en) * 2000-03-21 2002-04-09 Semitool, Inc. Apparatus for electrochemically processing a microelectronic workpiece
US7585398B2 (en) * 1999-04-13 2009-09-08 Semitool, Inc. Chambers, systems, and methods for electrochemically processing microfeature workpieces
US7189318B2 (en) * 1999-04-13 2007-03-13 Semitool, Inc. Tuning electrodes used in a reactor for electrochemically processing a microelectronic workpiece
US6720261B1 (en) * 1999-06-02 2004-04-13 Agere Systems Inc. Method and system for eliminating extrusions in semiconductor vias
US6201221B1 (en) * 1999-09-16 2001-03-13 Lucent Technologies, Inc. Method and apparatus for heat regulating electronics products
US6620354B1 (en) 1999-11-29 2003-09-16 The Conair Group, Inc. Apparatus and method for producing and cutting extruded material using temperature feedback
US6780374B2 (en) 2000-12-08 2004-08-24 Semitool, Inc. Method and apparatus for processing a microelectronic workpiece at an elevated temperature
US6471913B1 (en) 2000-02-09 2002-10-29 Semitool, Inc. Method and apparatus for processing a microelectronic workpiece including an apparatus and method for executing a processing step at an elevated temperature
AU2001259504A1 (en) * 2000-05-24 2001-12-03 Semitool, Inc. Tuning electrodes used in a reactor for electrochemically processing a microelectronic workpiece
US7102763B2 (en) * 2000-07-08 2006-09-05 Semitool, Inc. Methods and apparatus for processing microelectronic workpieces using metrology
JP4644943B2 (ja) * 2001-01-23 2011-03-09 東京エレクトロン株式会社 処理装置
JP4720019B2 (ja) * 2001-05-18 2011-07-13 東京エレクトロン株式会社 冷却機構及び処理装置
US6529686B2 (en) * 2001-06-06 2003-03-04 Fsi International, Inc. Heating member for combination heating and chilling apparatus, and methods
US7090751B2 (en) * 2001-08-31 2006-08-15 Semitool, Inc. Apparatus and methods for electrochemical processing of microelectronic workpieces
KR100436657B1 (ko) * 2001-12-17 2004-06-22 미래산업 주식회사 반도체 소자 테스트 핸들러의 소자 가열 및 냉각장치
JP4034145B2 (ja) * 2002-08-09 2008-01-16 住友大阪セメント株式会社 サセプタ装置
US6946033B2 (en) 2002-09-16 2005-09-20 Applied Materials Inc. Heated gas distribution plate for a processing chamber
US20060105182A1 (en) * 2004-11-16 2006-05-18 Applied Materials, Inc. Erosion resistant textured chamber surface
US7221553B2 (en) * 2003-04-22 2007-05-22 Applied Materials, Inc. Substrate support having heat transfer system
US6811662B1 (en) * 2003-08-22 2004-11-02 Powership Semiconductor Corp. Sputtering apparatus and manufacturing method of metal layer/metal compound layer by using thereof
KR20050040434A (ko) * 2003-10-28 2005-05-03 삼성전자주식회사 집속 이온빔 장치의 시편 냉각 시스템
CN100411091C (zh) * 2003-11-26 2008-08-13 天普桑尼克公司 用于降低热控制卡盘中电噪声的装置和方法
EP1692714A1 (de) * 2003-11-26 2006-08-23 Temptronic Corporation Vorrichtung und verfahren zur verringerung von elektrischem rauschen in einer thermisch gesteuerten einspannvorrichtung
JP4906425B2 (ja) * 2006-07-26 2012-03-28 株式会社日立ハイテクノロジーズ プラズマ処理装置
JP2008192643A (ja) * 2007-01-31 2008-08-21 Tokyo Electron Ltd 基板処理装置
US7649729B2 (en) * 2007-10-12 2010-01-19 Applied Materials, Inc. Electrostatic chuck assembly
WO2009058376A2 (en) * 2007-10-31 2009-05-07 Lam Research Corporation Temperature control module using gas pressure to control thermal conductance between liquid coolant and component body
JP5382602B2 (ja) * 2008-03-11 2014-01-08 住友電気工業株式会社 ウエハ保持体および半導体製造装置
JP5519992B2 (ja) * 2009-10-14 2014-06-11 東京エレクトロン株式会社 基板載置台の温度制御システム及びその温度制御方法
US20140167795A1 (en) * 2012-12-14 2014-06-19 Texas Instruments Incorporated Active feedback silicon failure analysis die temperature control system
IL247032B (en) * 2014-02-14 2022-07-01 Applied Materials Inc Gas-cooled substrate support for stable deposition at high temperature
US10373850B2 (en) * 2015-03-11 2019-08-06 Asm Ip Holding B.V. Pre-clean chamber and process with substrate tray for changing substrate temperature
CN107851559B (zh) 2015-06-26 2022-04-26 东京毅力科创株式会社 气相蚀刻***和方法
US10971372B2 (en) 2015-06-26 2021-04-06 Tokyo Electron Limited Gas phase etch with controllable etch selectivity of Si-containing arc or silicon oxynitride to different films or masks
JP6972131B2 (ja) * 2016-12-27 2021-11-24 エヴァテック・アーゲー 真空プラズマ加工対象物処理装置
DE102017106968A1 (de) * 2017-03-31 2018-10-04 Aixtron Se Vorrichtung und Verfahren zur Bestimmung der Konzentration eines Dampfes
DE102017106967A1 (de) 2017-03-31 2018-10-04 Aixtron Se Vorrichtung und Verfahren zur Bestimmung der Konzentration eines Dampfes
CN108873983A (zh) * 2018-06-27 2018-11-23 沈阳拓荆科技有限公司 半导体加热盘复合控温***及控温方法
CN110614248A (zh) * 2019-09-17 2019-12-27 苏州晶洲装备科技有限公司 一种高精度恒温储液装置及具有其的oled平板清洗机
CN113126667B (zh) * 2020-01-16 2022-04-05 夏泰鑫半导体(青岛)有限公司 半导体设备及其温度控制方法

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US3646243A (en) * 1969-10-27 1972-02-29 Simplex Wire & Cable Co Coolant circuit for resistive cryogenic electric power transmission line
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JPS60245778A (ja) * 1984-05-21 1985-12-05 Hitachi Ltd 薄膜形成装置
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Also Published As

Publication number Publication date
EP0776988A2 (de) 1997-06-04
EP0776988A3 (de) 1997-06-25
DE69607725T2 (de) 2001-04-26
JPH09157846A (ja) 1997-06-17
US5892207A (en) 1999-04-06
EP0776988B1 (de) 2000-04-12

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Legal Events

Date Code Title Description
8332 No legal effect for de
8370 Indication of lapse of patent is to be deleted
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee