DE69601549D1 - Herstellungsverfahren für einen oberflächenemittierenden Laser - Google Patents

Herstellungsverfahren für einen oberflächenemittierenden Laser

Info

Publication number
DE69601549D1
DE69601549D1 DE69601549T DE69601549T DE69601549D1 DE 69601549 D1 DE69601549 D1 DE 69601549D1 DE 69601549 T DE69601549 T DE 69601549T DE 69601549 T DE69601549 T DE 69601549T DE 69601549 D1 DE69601549 D1 DE 69601549D1
Authority
DE
Germany
Prior art keywords
manufacturing process
emitting laser
surface emitting
laser
manufacturing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69601549T
Other languages
English (en)
Other versions
DE69601549T2 (de
Inventor
Francois Brillouet
Joel Jacquet
Antonia Plais
Leon Goldstein
Paul Salet
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Oclaro North America Inc
Original Assignee
Alcatel CIT SA
Alcatel SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Alcatel CIT SA, Alcatel SA filed Critical Alcatel CIT SA
Publication of DE69601549D1 publication Critical patent/DE69601549D1/de
Application granted granted Critical
Publication of DE69601549T2 publication Critical patent/DE69601549T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18341—Intra-cavity contacts
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/0206—Substrates, e.g. growth, shape, material, removal or bonding
    • H01S5/0207—Substrates having a special shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18308—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] having a special structure for lateral current or light confinement
    • H01S5/18311—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] having a special structure for lateral current or light confinement using selective oxidation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18361—Structure of the reflectors, e.g. hybrid mirrors
    • H01S5/18369—Structure of the reflectors, e.g. hybrid mirrors based on dielectric materials

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)
DE69601549T 1995-12-27 1996-12-24 Herstellungsverfahren für einen oberflächenemittierenden Laser Expired - Fee Related DE69601549T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR9515544A FR2743196B1 (fr) 1995-12-27 1995-12-27 Procede de fabrication d'un laser semi-conducteur a emission par la surface

Publications (2)

Publication Number Publication Date
DE69601549D1 true DE69601549D1 (de) 1999-03-25
DE69601549T2 DE69601549T2 (de) 1999-07-08

Family

ID=9485996

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69601549T Expired - Fee Related DE69601549T2 (de) 1995-12-27 1996-12-24 Herstellungsverfahren für einen oberflächenemittierenden Laser

Country Status (7)

Country Link
US (1) US5747366A (de)
EP (1) EP0782228B1 (de)
JP (1) JPH09186400A (de)
AU (1) AU707420B2 (de)
CA (1) CA2194004A1 (de)
DE (1) DE69601549T2 (de)
FR (1) FR2743196B1 (de)

Families Citing this family (27)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6567448B1 (en) 1997-12-12 2003-05-20 Xerox Corporation Scanning III-V compound light emitters integrated with Si-based actuators
US6180428B1 (en) 1997-12-12 2001-01-30 Xerox Corporation Monolithic scanning light emitting devices using micromachining
US6054335A (en) * 1997-12-12 2000-04-25 Xerox Corporation Fabrication of scanning III-V compound light emitters integrated with Si-based actuators
US6116756A (en) 1997-12-12 2000-09-12 Xerox Corporation Monolithic scanning light emitting devices
JP3255111B2 (ja) * 1998-05-06 2002-02-12 日本電気株式会社 半導体レーザ及びその製造方法
US6091537A (en) * 1998-12-11 2000-07-18 Xerox Corporation Electro-actuated microlens assemblies
US20030219917A1 (en) * 1998-12-21 2003-11-27 Johnson Ralph H. System and method using migration enhanced epitaxy for flattening active layers and the mechanical stabilization of quantum wells associated with vertical cavity surface emitting lasers
US6922426B2 (en) 2001-12-20 2005-07-26 Finisar Corporation Vertical cavity surface emitting laser including indium in the active region
US7058112B2 (en) 2001-12-27 2006-06-06 Finisar Corporation Indium free vertical cavity surface emitting laser
US7257143B2 (en) * 1998-12-21 2007-08-14 Finisar Corporation Multicomponent barrier layers in quantum well active regions to enhance confinement and speed
US7286585B2 (en) * 1998-12-21 2007-10-23 Finisar Corporation Low temperature grown layers with migration enhanced epitaxy adjacent to an InGaAsN(Sb) based active region
US7435660B2 (en) * 1998-12-21 2008-10-14 Finisar Corporation Migration enhanced epitaxy fabrication of active regions having quantum wells
US7408964B2 (en) 2001-12-20 2008-08-05 Finisar Corporation Vertical cavity surface emitting laser including indium and nitrogen in the active region
US6975660B2 (en) 2001-12-27 2005-12-13 Finisar Corporation Vertical cavity surface emitting laser including indium and antimony in the active region
US7095770B2 (en) 2001-12-20 2006-08-22 Finisar Corporation Vertical cavity surface emitting laser including indium, antimony and nitrogen in the active region
US7167495B2 (en) * 1998-12-21 2007-01-23 Finisar Corporation Use of GaAs extended barrier layers between active regions containing nitrogen and AlGaAs confining layers
US6376269B1 (en) * 1999-02-02 2002-04-23 Agilent Technologies, Inc. Vertical cavity surface emitting laser (VCSEL) using buried Bragg reflectors and method for producing same
DE19945128A1 (de) * 1999-09-21 2001-05-17 Osram Opto Semiconductors Gmbh Vertikalresonator-Laserdiode mit einer Schutzschicht auf dem Auskoppelfenster
US6542530B1 (en) * 2000-10-27 2003-04-01 Chan-Long Shieh Electrically pumped long-wavelength VCSEL and methods of fabrication
US7295586B2 (en) * 2002-02-21 2007-11-13 Finisar Corporation Carbon doped GaAsSb suitable for use in tunnel junctions of long-wavelength VCSELs
US6822995B2 (en) * 2002-02-21 2004-11-23 Finisar Corporation GaAs/AI(Ga)As distributed bragg reflector on InP
EP1359614A1 (de) * 2002-05-02 2003-11-05 Agilent Technologies, Inc. - a Delaware corporation - Halbleitersubstrate und -strukturen mit einer Oxidschicht
DE10223540B4 (de) * 2002-05-27 2006-12-21 Osram Opto Semiconductors Gmbh Optisch gepumpte Halbleiterlaservorrichtung
US6936486B2 (en) * 2002-11-19 2005-08-30 Jdsu Uniphase Corporation Low voltage multi-junction vertical cavity surface emitting laser
US7433381B2 (en) * 2003-06-25 2008-10-07 Finisar Corporation InP based long wavelength VCSEL
CN101432936B (zh) * 2004-10-01 2011-02-02 菲尼萨公司 具有多顶侧接触的垂直腔面发射激光器
US7860137B2 (en) * 2004-10-01 2010-12-28 Finisar Corporation Vertical cavity surface emitting laser with undoped top mirror

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5160492A (en) * 1989-04-24 1992-11-03 Hewlett-Packard Company Buried isolation using ion implantation and subsequent epitaxial growth
US5038356A (en) * 1989-12-04 1991-08-06 Trw Inc. Vertical-cavity surface-emitting diode laser
JPH04101485A (ja) * 1990-08-21 1992-04-02 Hitachi Ltd ビーム広がり角可変半導体レーザ装置およびそれを用いた情報処理装置
US5390210A (en) * 1993-11-22 1995-02-14 Hewlett-Packard Company Semiconductor laser that generates second harmonic light with attached nonlinear crystal
US5400354A (en) * 1994-02-08 1995-03-21 Ludowise; Michael Laminated upper cladding structure for a light-emitting device
US5550081A (en) * 1994-04-08 1996-08-27 Board Of Trustees Of The University Of Illinois Method of fabricating a semiconductor device by oxidizing aluminum-bearing 1H-V semiconductor in water vapor environment
US5517039A (en) * 1994-11-14 1996-05-14 Hewlett-Packard Company Semiconductor devices fabricated with passivated high aluminum-content III-V material
US5493577A (en) * 1994-12-21 1996-02-20 Sandia Corporation Efficient semiconductor light-emitting device and method
US5594751A (en) * 1995-06-26 1997-01-14 Optical Concepts, Inc. Current-apertured vertical cavity laser
US5696784A (en) * 1996-04-19 1997-12-09 Opto Power Corporation Reduced mode laser and method of fabrication

Also Published As

Publication number Publication date
EP0782228A1 (de) 1997-07-02
FR2743196A1 (fr) 1997-07-04
JPH09186400A (ja) 1997-07-15
FR2743196B1 (fr) 1998-02-06
AU707420B2 (en) 1999-07-08
AU7548596A (en) 1997-07-03
CA2194004A1 (fr) 1997-06-28
US5747366A (en) 1998-05-05
DE69601549T2 (de) 1999-07-08
EP0782228B1 (de) 1999-02-17

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Legal Events

Date Code Title Description
8327 Change in the person/name/address of the patent owner

Owner name: ALCATEL, PARIS, FR

8364 No opposition during term of opposition
8327 Change in the person/name/address of the patent owner

Owner name: AVANEX CORP., FREMONT, CALIF., US

8339 Ceased/non-payment of the annual fee