DE69500143D1 - Schaltung zum Wählen von Redundanzspeicherbauelementen und diese enthaltende FLASH EEPROM - Google Patents

Schaltung zum Wählen von Redundanzspeicherbauelementen und diese enthaltende FLASH EEPROM

Info

Publication number
DE69500143D1
DE69500143D1 DE69500143T DE69500143T DE69500143D1 DE 69500143 D1 DE69500143 D1 DE 69500143D1 DE 69500143 T DE69500143 T DE 69500143T DE 69500143 T DE69500143 T DE 69500143T DE 69500143 D1 DE69500143 D1 DE 69500143D1
Authority
DE
Germany
Prior art keywords
circuit
memory components
flash eeprom
redundancy memory
eeprom containing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69500143T
Other languages
English (en)
Other versions
DE69500143T2 (de
Inventor
Jean-Marie Bernard Gaultier
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
STMicroelectronics SA
Original Assignee
SGS Thomson Microelectronics SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by SGS Thomson Microelectronics SA filed Critical SGS Thomson Microelectronics SA
Publication of DE69500143D1 publication Critical patent/DE69500143D1/de
Application granted granted Critical
Publication of DE69500143T2 publication Critical patent/DE69500143T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/70—Masking faults in memories by using spares or by reconfiguring
    • G11C29/76—Masking faults in memories by using spares or by reconfiguring using address translation or modifications
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/70—Masking faults in memories by using spares or by reconfiguring
    • G11C29/78—Masking faults in memories by using spares or by reconfiguring using programmable devices
    • G11C29/785—Masking faults in memories by using spares or by reconfiguring using programmable devices with redundancy programming schemes
    • G11C29/789—Masking faults in memories by using spares or by reconfiguring using programmable devices with redundancy programming schemes using non-volatile cells or latches
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/70—Masking faults in memories by using spares or by reconfiguring
    • G11C29/78—Masking faults in memories by using spares or by reconfiguring using programmable devices
    • G11C29/80—Masking faults in memories by using spares or by reconfiguring using programmable devices with improved layout
    • G11C29/804—Masking faults in memories by using spares or by reconfiguring using programmable devices with improved layout to prevent clustered faults
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/70—Masking faults in memories by using spares or by reconfiguring
    • G11C29/78—Masking faults in memories by using spares or by reconfiguring using programmable devices
    • G11C29/80—Masking faults in memories by using spares or by reconfiguring using programmable devices with improved layout
    • G11C29/816—Masking faults in memories by using spares or by reconfiguring using programmable devices with improved layout for an application-specific layout
    • G11C29/82—Masking faults in memories by using spares or by reconfiguring using programmable devices with improved layout for an application-specific layout for EEPROMs

Landscapes

  • For Increasing The Reliability Of Semiconductor Memories (AREA)
  • Read Only Memory (AREA)
  • Techniques For Improving Reliability Of Storages (AREA)
DE69500143T 1994-02-23 1995-02-17 Schaltung zum Wählen von Redundanzspeicherbauelementen und diese enthaltende FLASH EEPROM Expired - Fee Related DE69500143T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR9402304A FR2716566B1 (fr) 1994-02-23 1994-02-23 Circuit de sélection d'éléments de mémoire redondants et mémoire "Flash Eeprom" comportant ledit circuit.

Publications (2)

Publication Number Publication Date
DE69500143D1 true DE69500143D1 (de) 1997-03-06
DE69500143T2 DE69500143T2 (de) 1997-05-22

Family

ID=9460521

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69500143T Expired - Fee Related DE69500143T2 (de) 1994-02-23 1995-02-17 Schaltung zum Wählen von Redundanzspeicherbauelementen und diese enthaltende FLASH EEPROM

Country Status (5)

Country Link
US (1) US5796653A (de)
EP (1) EP0674264B1 (de)
JP (1) JP2833646B2 (de)
DE (1) DE69500143T2 (de)
FR (1) FR2716566B1 (de)

Families Citing this family (28)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2764095B1 (fr) * 1997-05-30 2001-10-12 Sgs Thomson Microelectronics Circuit de memoire avec redondance dynamique
US6141779A (en) * 1998-10-19 2000-10-31 Hewlett-Packard Company Method for automatically programming a redundancy map for a redundant circuit
US6198675B1 (en) * 1998-12-23 2001-03-06 Cray Inc. RAM configurable redundancy
DE19956069A1 (de) * 1999-11-22 2001-05-31 Infineon Technologies Ag Integrierter Speicher mit Speicherzellen und Referenzzellen
JP3893005B2 (ja) * 2000-01-06 2007-03-14 富士通株式会社 不揮発性半導体記憶装置
US6536003B1 (en) * 2000-02-08 2003-03-18 Infineon Technologies Ag Testable read-only memory for data memory redundant logic
JP3980807B2 (ja) * 2000-03-27 2007-09-26 株式会社東芝 半導体装置及び半導体モジュール
US6314023B1 (en) * 2000-06-15 2001-11-06 Motorola, Inc. Non-volatile programming elements for redundancy and identification in an integrated circuit
US6671834B1 (en) * 2000-07-18 2003-12-30 Micron Technology, Inc. Memory redundancy with programmable non-volatile control
US6711056B2 (en) * 2001-03-12 2004-03-23 Micron Technology, Inc. Memory with row redundancy
US7162668B2 (en) * 2001-04-19 2007-01-09 Micron Technology, Inc. Memory with element redundancy
US6865702B2 (en) * 2001-04-09 2005-03-08 Micron Technology, Inc. Synchronous flash memory with test code input
US7640465B2 (en) * 2001-04-19 2009-12-29 Micron Technology, Inc. Memory with element redundancy
DE60212332T2 (de) * 2002-04-26 2007-06-06 Stmicroelectronics S.R.L., Agrate Brianza Selbstreparatur-Methode für nicht flüchtige Speicher mit einer Architektur zur Fehlervermeidung sowie nicht flüchtiger Speicher
EP1365419B1 (de) * 2002-05-21 2008-12-31 STMicroelectronics S.r.l. Selbstreparaturverfahren für nichtflüchtige Speicheranordnung mit Lösch-/Programmierfehlerdetektion, und nichtflüchtige Speicheranordnung dafür
KR100460993B1 (ko) * 2002-12-27 2004-12-09 주식회사 하이닉스반도체 워드라인 리페어가 가능한 플래시 메모리 소자
US7061815B2 (en) * 2003-08-05 2006-06-13 Stmicroelectronics Pvt. Ltd. Semiconductor memory device providing redundancy
JP4062247B2 (ja) * 2003-12-11 2008-03-19 ソニー株式会社 半導体記憶装置
US7836364B1 (en) 2006-05-30 2010-11-16 Marvell International Ltd. Circuits, architectures, apparatuses, systems, methods, algorithms, software and firmware for using reserved cells to indicate defect positions
US9330783B1 (en) 2014-12-17 2016-05-03 Apple Inc. Identifying word-line-to-substrate and word-line-to-word-line short-circuit events in a memory block
US9390809B1 (en) 2015-02-10 2016-07-12 Apple Inc. Data storage in a memory block following WL-WL short
US9529663B1 (en) 2015-12-20 2016-12-27 Apple Inc. Detection and localization of failures in 3D NAND flash memory
US9996417B2 (en) 2016-04-12 2018-06-12 Apple Inc. Data recovery in memory having multiple failure modes
US10755787B2 (en) 2018-06-28 2020-08-25 Apple Inc. Efficient post programming verification in a nonvolatile memory
US10762967B2 (en) 2018-06-28 2020-09-01 Apple Inc. Recovering from failure in programming a nonvolatile memory
US10936455B2 (en) 2019-02-11 2021-03-02 Apple Inc. Recovery of data failing due to impairment whose severity depends on bit-significance value
US10915394B1 (en) 2019-09-22 2021-02-09 Apple Inc. Schemes for protecting data in NVM device using small storage footprint
US11550657B1 (en) 2021-09-01 2023-01-10 Apple Inc. Efficient programming schemes in a nonvolatile memory

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5265055A (en) * 1988-10-07 1993-11-23 Hitachi, Ltd. Semiconductor memory having redundancy circuit
JPH02146195A (ja) * 1988-11-28 1990-06-05 Nec Corp 半導体記憶装置
EP0686980B1 (de) * 1989-01-31 1998-12-16 Fujitsu Limited Halbleiterspeicher mit Einrichtung zum Ersetzen defekter Speicherzellen
JP2540201B2 (ja) * 1989-02-10 1996-10-02 富士通株式会社 半導体記憶装置
US5233559A (en) * 1991-02-11 1993-08-03 Intel Corporation Row redundancy for flash memories
US5281868A (en) * 1992-08-18 1994-01-25 Micron Technology, Inc. Memory redundancy addressing circuit for adjacent columns in a memory

Also Published As

Publication number Publication date
EP0674264B1 (de) 1997-01-22
JPH07262793A (ja) 1995-10-13
EP0674264A1 (de) 1995-09-27
FR2716566A1 (fr) 1995-08-25
DE69500143T2 (de) 1997-05-22
US5796653A (en) 1998-08-18
JP2833646B2 (ja) 1998-12-09
FR2716566B1 (fr) 1996-04-19

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee