DE69431698T2 - Einen Strahl schneller Atome verwendendes Verarbeitungsverfahren - Google Patents
Einen Strahl schneller Atome verwendendes VerarbeitungsverfahrenInfo
- Publication number
- DE69431698T2 DE69431698T2 DE69431698T DE69431698T DE69431698T2 DE 69431698 T2 DE69431698 T2 DE 69431698T2 DE 69431698 T DE69431698 T DE 69431698T DE 69431698 T DE69431698 T DE 69431698T DE 69431698 T2 DE69431698 T2 DE 69431698T2
- Authority
- DE
- Germany
- Prior art keywords
- jet
- faster
- atoms
- processing method
- processing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
- H01J37/305—Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating or etching
- H01J37/3053—Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating or etching for evaporating or etching
- H01J37/3056—Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating or etching for evaporating or etching for microworking, e.g. etching of gratings, trimming of electrical components
-
- G—PHYSICS
- G21—NUCLEAR PHYSICS; NUCLEAR ENGINEERING
- G21K—TECHNIQUES FOR HANDLING PARTICLES OR IONISING RADIATION NOT OTHERWISE PROVIDED FOR; IRRADIATION DEVICES; GAMMA RAY OR X-RAY MICROSCOPES
- G21K5/00—Irradiation devices
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
- H05H3/00—Production or acceleration of neutral particle beams, e.g. molecular or atomic beams
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Plasma & Fusion (AREA)
- General Engineering & Computer Science (AREA)
- High Energy & Nuclear Physics (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Laser Beam Processing (AREA)
- Welding Or Cutting Using Electron Beams (AREA)
- Drying Of Semiconductors (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP19207293 | 1993-07-05 | ||
JP15681194A JP3394602B2 (ja) | 1993-07-05 | 1994-06-14 | 高速原子線を用いた加工方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
DE69431698D1 DE69431698D1 (de) | 2002-12-19 |
DE69431698T2 true DE69431698T2 (de) | 2003-08-21 |
Family
ID=26484470
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69431698T Expired - Fee Related DE69431698T2 (de) | 1993-07-05 | 1994-07-04 | Einen Strahl schneller Atome verwendendes Verarbeitungsverfahren |
Country Status (5)
Country | Link |
---|---|
US (1) | US5708267A (de) |
EP (1) | EP0637901B1 (de) |
JP (1) | JP3394602B2 (de) |
KR (1) | KR100333430B1 (de) |
DE (1) | DE69431698T2 (de) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE112010003115B4 (de) * | 2009-07-30 | 2019-11-21 | Hitachi High-Technologies Corporation | Abschirmung für eine Ionenätzvorrichtung sowie Ionenätzvorrichtung |
Families Citing this family (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5770123A (en) * | 1994-09-22 | 1998-06-23 | Ebara Corporation | Method and apparatus for energy beam machining |
EP0731490A3 (de) * | 1995-03-02 | 1998-03-11 | Ebara Corporation | Ultrafeines Mikroherstellungsverfahren unter Verwendung eines Energiebündel |
EP0732624B1 (de) * | 1995-03-17 | 2001-10-10 | Ebara Corporation | Herstellungsverfahren mit einem Energiebündel |
US6835317B2 (en) * | 1997-11-04 | 2004-12-28 | Ebara Corporation | Method of making substrate with micro-protrusions or micro-cavities |
US6671034B1 (en) * | 1998-04-30 | 2003-12-30 | Ebara Corporation | Microfabrication of pattern imprinting |
EP1160826A3 (de) * | 2000-05-30 | 2006-12-13 | Ebara Corporation | Beschichten, Verändern und Ätzen eines Substrats mittels Teilchenbestrahlung |
US6768110B2 (en) * | 2000-06-21 | 2004-07-27 | Gatan, Inc. | Ion beam milling system and method for electron microscopy specimen preparation |
US20020194750A1 (en) * | 2001-06-21 | 2002-12-26 | Feick William Kurt | Footwear with interchangeable uppers |
JP4681942B2 (ja) * | 2005-05-25 | 2011-05-11 | オリンパス株式会社 | 微小凹部の作製方法 |
JP4700692B2 (ja) * | 2005-09-05 | 2011-06-15 | パイオニア株式会社 | 被エッチング材の製造方法 |
WO2009086534A1 (en) * | 2007-12-28 | 2009-07-09 | Veeco Instruments Inc. | Method of fabricating a probe device for a metrology instrument and probe device produced thereby |
Family Cites Families (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3860783A (en) * | 1970-10-19 | 1975-01-14 | Bell Telephone Labor Inc | Ion etching through a pattern mask |
GB2146168A (en) * | 1983-09-05 | 1985-04-11 | Philips Electronic Associated | Electron image projector |
US4789779A (en) * | 1984-08-01 | 1988-12-06 | The United States Of America As Represented By The Secretary Of Commerce | Heat pipe oven molecular beam source |
US5108543A (en) * | 1984-11-07 | 1992-04-28 | Hitachi, Ltd. | Method of surface treatment |
JPH0642456B2 (ja) * | 1984-11-21 | 1994-06-01 | 株式会社日立製作所 | 表面光処理方法 |
US4774416A (en) * | 1986-09-24 | 1988-09-27 | Plaser Corporation | Large cross-sectional area molecular beam source for semiconductor processing |
KR960016218B1 (ko) * | 1987-06-05 | 1996-12-07 | 가부시기가이샤 히다찌세이사꾸쇼 | 표면처리방법 및 그 장치 |
US5029222A (en) * | 1987-09-02 | 1991-07-02 | Fujitsu Limited | Photoelectron image projection apparatus |
US5316616A (en) * | 1988-02-09 | 1994-05-31 | Fujitsu Limited | Dry etching with hydrogen bromide or bromine |
FR2636773B1 (fr) * | 1988-09-16 | 1990-10-26 | Cgr Mev | Dispositif d'irradiation double face d'un produit |
JPH03257182A (ja) * | 1990-03-07 | 1991-11-15 | Hitachi Ltd | 表面加工装置 |
JPH0724240B2 (ja) * | 1991-03-05 | 1995-03-15 | 株式会社荏原製作所 | 高速原子線源 |
JPH0715808B2 (ja) * | 1991-04-23 | 1995-02-22 | 株式会社荏原製作所 | イオン中和器 |
JPH05326452A (ja) * | 1991-06-10 | 1993-12-10 | Kawasaki Steel Corp | プラズマ処理装置及び方法 |
US5350480A (en) * | 1993-07-23 | 1994-09-27 | Aspect International, Inc. | Surface cleaning and conditioning using hot neutral gas beam array |
-
1994
- 1994-06-14 JP JP15681194A patent/JP3394602B2/ja not_active Expired - Fee Related
- 1994-07-04 EP EP94110367A patent/EP0637901B1/de not_active Expired - Lifetime
- 1994-07-04 DE DE69431698T patent/DE69431698T2/de not_active Expired - Fee Related
- 1994-07-05 KR KR1019940015982A patent/KR100333430B1/ko not_active IP Right Cessation
-
1996
- 1996-07-09 US US08/677,166 patent/US5708267A/en not_active Expired - Fee Related
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE112010003115B4 (de) * | 2009-07-30 | 2019-11-21 | Hitachi High-Technologies Corporation | Abschirmung für eine Ionenätzvorrichtung sowie Ionenätzvorrichtung |
Also Published As
Publication number | Publication date |
---|---|
JPH0768389A (ja) | 1995-03-14 |
DE69431698D1 (de) | 2002-12-19 |
KR950004655A (ko) | 1995-02-18 |
EP0637901A1 (de) | 1995-02-08 |
KR100333430B1 (ko) | 2002-09-19 |
EP0637901B1 (de) | 2002-11-13 |
JP3394602B2 (ja) | 2003-04-07 |
US5708267A (en) | 1998-01-13 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8339 | Ceased/non-payment of the annual fee |