DE69413159D1 - Plasma-Entladungs-Bearbeitungsvorrichtung - Google Patents

Plasma-Entladungs-Bearbeitungsvorrichtung

Info

Publication number
DE69413159D1
DE69413159D1 DE69413159T DE69413159T DE69413159D1 DE 69413159 D1 DE69413159 D1 DE 69413159D1 DE 69413159 T DE69413159 T DE 69413159T DE 69413159 T DE69413159 T DE 69413159T DE 69413159 D1 DE69413159 D1 DE 69413159D1
Authority
DE
Germany
Prior art keywords
processing device
plasma discharge
discharge processing
plasma
processing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69413159T
Other languages
English (en)
Other versions
DE69413159T2 (de
Inventor
Taijiro Uchida
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nihon Shinku Gijutsu KK
Original Assignee
Nihon Shinku Gijutsu KK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP6052419A external-priority patent/JPH07263190A/ja
Priority claimed from JP6052418A external-priority patent/JP2705897B2/ja
Application filed by Nihon Shinku Gijutsu KK filed Critical Nihon Shinku Gijutsu KK
Publication of DE69413159D1 publication Critical patent/DE69413159D1/de
Application granted granted Critical
Publication of DE69413159T2 publication Critical patent/DE69413159T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Plasma Technology (AREA)
  • Chemical Vapour Deposition (AREA)
DE69413159T 1993-07-26 1994-07-26 Plasma-Entladungs-Bearbeitungsvorrichtung Expired - Lifetime DE69413159T2 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP18389993 1993-07-26
JP6052419A JPH07263190A (ja) 1994-03-24 1994-03-24 放電プラズマ処理装置
JP6052418A JP2705897B2 (ja) 1993-07-26 1994-03-24 放電プラズマ処理装置

Publications (2)

Publication Number Publication Date
DE69413159D1 true DE69413159D1 (de) 1998-10-15
DE69413159T2 DE69413159T2 (de) 1999-01-28

Family

ID=27294624

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69413159T Expired - Lifetime DE69413159T2 (de) 1993-07-26 1994-07-26 Plasma-Entladungs-Bearbeitungsvorrichtung

Country Status (3)

Country Link
US (2) US6475333B1 (de)
EP (1) EP0637054B1 (de)
DE (1) DE69413159T2 (de)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE69732055T2 (de) * 1996-02-09 2005-06-02 ULVAC, Inc., Chigasaki Vorrichtung zur Erzeugung eines Plasmas mit Entladung entlang einer magnetisch neutralen Linie
JPH09302484A (ja) * 1996-05-15 1997-11-25 Ulvac Japan Ltd 磁気中性線プラズマ型放電洗浄装置
KR20030041217A (ko) * 2001-11-19 2003-05-27 주성엔지니어링(주) Ｉｃｐ 발생 장치의 안테나 전극
JP3823069B2 (ja) 2002-06-12 2006-09-20 株式会社アルバック 磁気中性線放電プラズマ処理装置
DE10326135B4 (de) * 2002-06-12 2014-12-24 Ulvac, Inc. Entladungsplasma-Bearbeitungsanlage
JP4945566B2 (ja) * 2006-07-14 2012-06-06 株式会社アルバック 容量結合型磁気中性線プラズマスパッタ装置
US20080113108A1 (en) * 2006-11-09 2008-05-15 Stowell Michael W System and method for control of electromagnetic radiation in pecvd discharge processes
CN101960569B (zh) * 2008-03-07 2012-11-28 株式会社爱发科 等离子处理方法
CN102843851B (zh) * 2012-05-04 2015-01-28 上海华力微电子有限公司 一种等离子发生装置及方法
CN103118478A (zh) * 2013-01-18 2013-05-22 大连理工大学 一种脉冲潘宁放电大口径等离子体发生装置
US9330889B2 (en) * 2013-07-11 2016-05-03 Agilent Technologies Inc. Plasma generation device with microstrip resonator
JP6976279B2 (ja) * 2019-03-25 2021-12-08 株式会社Kokusai Electric 基板処理装置、半導体装置の製造方法及びプログラム
KR102381323B1 (ko) * 2020-05-15 2022-03-31 (주)엘오티씨이에스 유도결합 플라즈마 반응기 및 유도결합 플라즈마 반응기의 안테나 코일용 와이어 구조물

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4217855A (en) * 1974-10-23 1980-08-19 Futaba Denshi Kogyo K.K. Vaporized-metal cluster ion source and ionized-cluster beam deposition device
US4023523A (en) * 1975-04-23 1977-05-17 Xerox Corporation Coater hardware and method for obtaining uniform photoconductive layers on a xerographic photoreceptor
JPS57179952A (en) * 1981-04-24 1982-11-05 Fuji Photo Film Co Ltd Method and apparatus for magnetic recording medium
JPS58130443A (ja) * 1982-01-28 1983-08-03 Fuji Photo Film Co Ltd 磁気記録媒体の製造方法
JPS60221566A (ja) * 1984-04-18 1985-11-06 Agency Of Ind Science & Technol 薄膜形成装置
US5133826A (en) * 1989-03-09 1992-07-28 Applied Microwave Plasma Concepts, Inc. Electron cyclotron resonance plasma source
US5429070A (en) * 1989-06-13 1995-07-04 Plasma & Materials Technologies, Inc. High density plasma deposition and etching apparatus
US5208512A (en) * 1990-10-16 1993-05-04 International Business Machines Corporation Scanned electron cyclotron resonance plasma source
DE4118973C2 (de) * 1991-06-08 1999-02-04 Fraunhofer Ges Forschung Vorrichtung zur plasmaunterstützten Bearbeitung von Substraten und Verwendung dieser Vorrichtung
JPH0513404A (ja) * 1991-07-03 1993-01-22 Fujitsu Ltd 半導体装置の製造方法
US5198725A (en) * 1991-07-12 1993-03-30 Lam Research Corporation Method of producing flat ecr layer in microwave plasma device and apparatus therefor
EP0537950B1 (de) * 1991-10-17 1997-04-02 Applied Materials, Inc. Plasmareaktor
FR2709397B1 (fr) * 1993-08-27 1995-09-22 Cit Alcatel Réacteur à plasma pour un procédé de dépôt ou de gravure.

Also Published As

Publication number Publication date
US6475333B1 (en) 2002-11-05
US20020092619A1 (en) 2002-07-18
EP0637054B1 (de) 1998-09-09
EP0637054A1 (de) 1995-02-01
DE69413159T2 (de) 1999-01-28

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Legal Events

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