DE69408248D1 - Bipolares Halbleiterbauelement und Herstellungsverfahren - Google Patents
Bipolares Halbleiterbauelement und HerstellungsverfahrenInfo
- Publication number
- DE69408248D1 DE69408248D1 DE69408248T DE69408248T DE69408248D1 DE 69408248 D1 DE69408248 D1 DE 69408248D1 DE 69408248 T DE69408248 T DE 69408248T DE 69408248 T DE69408248 T DE 69408248T DE 69408248 D1 DE69408248 D1 DE 69408248D1
- Authority
- DE
- Germany
- Prior art keywords
- manufacturing
- semiconductor device
- bipolar semiconductor
- bipolar
- semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 238000004519 manufacturing process Methods 0.000 title 1
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66234—Bipolar junction transistors [BJT]
- H01L29/66272—Silicon vertical transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
- H01L21/8248—Combination of bipolar and field-effect technology
- H01L21/8249—Bipolar and MOS technology
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/417—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched
- H01L29/41708—Emitter or collector electrodes for bipolar transistors
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Bipolar Transistors (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP5248355A JPH07106452A (ja) | 1993-10-04 | 1993-10-04 | 半導体装置およびその製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
DE69408248D1 true DE69408248D1 (de) | 1998-03-05 |
DE69408248T2 DE69408248T2 (de) | 1998-07-09 |
Family
ID=17176874
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69408248T Expired - Fee Related DE69408248T2 (de) | 1993-10-04 | 1994-09-20 | Bipolares Halbleiterbauelement und Herstellungsverfahren |
Country Status (5)
Country | Link |
---|---|
US (1) | US5471085A (de) |
EP (1) | EP0646952B1 (de) |
JP (1) | JPH07106452A (de) |
KR (1) | KR0172985B1 (de) |
DE (1) | DE69408248T2 (de) |
Families Citing this family (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2756100B1 (fr) | 1996-11-19 | 1999-02-12 | Sgs Thomson Microelectronics | Transistor bipolaire a emetteur inhomogene dans un circuit integre bicmos |
FR2756101B1 (fr) * | 1996-11-19 | 1999-02-12 | Sgs Thomson Microelectronics | Procede de fabrication d'un transistor npn dans une technologie bicmos |
FR2756104B1 (fr) * | 1996-11-19 | 1999-01-29 | Sgs Thomson Microelectronics | Fabrication de circuits integres bipolaires/cmos |
FR2756103B1 (fr) * | 1996-11-19 | 1999-05-14 | Sgs Thomson Microelectronics | Fabrication de circuits integres bipolaires/cmos et d'un condensateur |
JP2001127174A (ja) | 1999-10-25 | 2001-05-11 | Mitsubishi Electric Corp | 半導体装置 |
JP3528756B2 (ja) | 2000-05-12 | 2004-05-24 | 松下電器産業株式会社 | 半導体装置 |
US6653708B2 (en) | 2000-08-08 | 2003-11-25 | Intersil Americas Inc. | Complementary metal oxide semiconductor with improved single event performance |
US6656809B2 (en) | 2002-01-15 | 2003-12-02 | International Business Machines Corporation | Method to fabricate SiGe HBTs with controlled current gain and improved breakdown voltage characteristics |
DE10231407B4 (de) | 2002-07-11 | 2007-01-11 | Infineon Technologies Ag | Bipolartransistor |
JP4786126B2 (ja) * | 2003-06-04 | 2011-10-05 | ルネサスエレクトロニクス株式会社 | 半導体装置の製造方法 |
US7190033B2 (en) * | 2004-04-15 | 2007-03-13 | Taiwan Semiconductor Manufacturing Company, Ltd. | CMOS device and method of manufacture |
JP4668764B2 (ja) * | 2005-10-25 | 2011-04-13 | Okiセミコンダクタ株式会社 | 半導体装置の製造方法 |
KR100935269B1 (ko) * | 2007-12-27 | 2010-01-06 | 주식회사 동부하이텍 | 이미지 센서 및 그 제조방법 |
US9184097B2 (en) * | 2009-03-12 | 2015-11-10 | System General Corporation | Semiconductor devices and formation methods thereof |
US11552169B2 (en) * | 2019-03-27 | 2023-01-10 | Intel Corporation | Source or drain structures with phosphorous and arsenic co-dopants |
Family Cites Families (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4299024A (en) * | 1980-02-25 | 1981-11-10 | Harris Corporation | Fabrication of complementary bipolar transistors and CMOS devices with poly gates |
IE52791B1 (en) * | 1980-11-05 | 1988-03-02 | Fujitsu Ltd | Semiconductor devices |
JPH0628296B2 (ja) * | 1985-10-17 | 1994-04-13 | 日本電気株式会社 | 半導体装置の製造方法 |
EP0255882A3 (de) * | 1986-08-07 | 1990-05-30 | Siemens Aktiengesellschaft | npn-Bipolartransistor mit extrem flachen Emitter/Basis-Strukturen und Verfahren zu seiner Herstellung |
US5258644A (en) * | 1988-02-24 | 1993-11-02 | Hitachi, Ltd. | Semiconductor device and method of manufacture thereof |
JPH02105464A (ja) * | 1988-10-13 | 1990-04-18 | Nec Corp | 半導体装置の製造方法 |
US5150184A (en) * | 1989-02-03 | 1992-09-22 | Texas Instruments Incorporated | Method for forming emitters in a BiCMOS process |
JP2937338B2 (ja) * | 1989-02-10 | 1999-08-23 | 株式会社東芝 | 半導体装置 |
JPH03201528A (ja) * | 1989-12-28 | 1991-09-03 | Toshiba Corp | 半導体装置及びその製造方法 |
JPH04152531A (ja) * | 1990-10-16 | 1992-05-26 | Fujitsu Ltd | 半導体装置の製造方法 |
KR940003589B1 (ko) * | 1991-02-25 | 1994-04-25 | 삼성전자 주식회사 | BiCMOS 소자의 제조 방법 |
-
1993
- 1993-10-04 JP JP5248355A patent/JPH07106452A/ja active Pending
-
1994
- 1994-09-20 DE DE69408248T patent/DE69408248T2/de not_active Expired - Fee Related
- 1994-09-20 EP EP94114761A patent/EP0646952B1/de not_active Expired - Lifetime
- 1994-09-22 US US08/310,526 patent/US5471085A/en not_active Expired - Fee Related
- 1994-09-30 KR KR1019940025164A patent/KR0172985B1/ko not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
JPH07106452A (ja) | 1995-04-21 |
US5471085A (en) | 1995-11-28 |
KR950012749A (ko) | 1995-05-16 |
EP0646952A2 (de) | 1995-04-05 |
DE69408248T2 (de) | 1998-07-09 |
EP0646952A3 (de) | 1995-12-27 |
KR0172985B1 (ko) | 1999-02-01 |
EP0646952B1 (de) | 1998-01-28 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8339 | Ceased/non-payment of the annual fee |