DE69407448D1 - Gewinngeführter Diodenlaser - Google Patents
Gewinngeführter DiodenlaserInfo
- Publication number
- DE69407448D1 DE69407448D1 DE69407448T DE69407448T DE69407448D1 DE 69407448 D1 DE69407448 D1 DE 69407448D1 DE 69407448 T DE69407448 T DE 69407448T DE 69407448 T DE69407448 T DE 69407448T DE 69407448 D1 DE69407448 D1 DE 69407448D1
- Authority
- DE
- Germany
- Prior art keywords
- profit
- diode laser
- led diode
- led
- laser
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
- H01S5/223—Buried stripe structure
- H01S5/2231—Buried stripe structure with inner confining structure only between the active layer and the upper electrode
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S2301/00—Functional characteristics
- H01S2301/06—Gain non-linearity, distortion; Compensation thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/2054—Methods of obtaining the confinement
- H01S5/2081—Methods of obtaining the confinement using special etching techniques
- H01S5/209—Methods of obtaining the confinement using special etching techniques special etch stop layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
- H01S5/2205—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers
- H01S5/2206—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers based on III-V materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/305—Structure or shape of the active region; Materials used for the active region characterised by the doping materials used in the laser structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
- H01S5/323—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
- H01S5/32308—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm
- H01S5/32325—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm red laser based on InGaP
Landscapes
- Physics & Mathematics (AREA)
- Geometry (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Semiconductor Lasers (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP4161893 | 1993-03-03 |
Publications (2)
Publication Number | Publication Date |
---|---|
DE69407448D1 true DE69407448D1 (de) | 1998-02-05 |
DE69407448T2 DE69407448T2 (de) | 1998-04-16 |
Family
ID=12613333
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69407448T Expired - Fee Related DE69407448T2 (de) | 1993-03-03 | 1994-03-03 | Gewinngeführter Diodenlaser |
Country Status (3)
Country | Link |
---|---|
US (1) | US5596591A (de) |
EP (1) | EP0614257B1 (de) |
DE (1) | DE69407448T2 (de) |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH08125126A (ja) * | 1994-10-19 | 1996-05-17 | Mitsubishi Electric Corp | 半導体装置 |
JPH08250808A (ja) * | 1995-03-15 | 1996-09-27 | Toshiba Corp | 半導体装置およびその製造方法 |
JPH08279650A (ja) * | 1995-04-06 | 1996-10-22 | Mitsubishi Electric Corp | 半導体レーザ装置、及び半導体レーザ装置の製造方法 |
JPH09199803A (ja) * | 1996-01-23 | 1997-07-31 | Mitsubishi Electric Corp | 半導体レーザおよびその製造方法 |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5034957A (en) * | 1988-02-10 | 1991-07-23 | Kabushiki Kaisha Toshiba | Semiconductor laser device |
US4893313A (en) * | 1988-03-14 | 1990-01-09 | Kabushiki Kaisha Toshiba | Semiconductor laser device which has a double-hetero structure having an optimal layer thickness |
JPH069282B2 (ja) * | 1988-09-09 | 1994-02-02 | 株式会社東芝 | 半導体レーザ装置 |
JP2831667B2 (ja) * | 1988-12-14 | 1998-12-02 | 株式会社東芝 | 半導体レーザ装置及びその製造方法 |
JP2723944B2 (ja) * | 1989-01-06 | 1998-03-09 | 株式会社日立製作所 | 半導体レーザ素子及び半導体レーザアレイ |
US5157679A (en) * | 1989-10-11 | 1992-10-20 | Hitachi-Ltd. | Optoelectronic devices |
US5268328A (en) * | 1990-09-07 | 1993-12-07 | Matsushita Electric Industrial Co., Ltd. | Method of fabricating a semiconductor laser |
-
1994
- 1994-03-03 US US08/205,170 patent/US5596591A/en not_active Expired - Fee Related
- 1994-03-03 EP EP94301553A patent/EP0614257B1/de not_active Expired - Lifetime
- 1994-03-03 DE DE69407448T patent/DE69407448T2/de not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
US5596591A (en) | 1997-01-21 |
EP0614257A2 (de) | 1994-09-07 |
EP0614257B1 (de) | 1997-12-29 |
EP0614257A3 (de) | 1994-11-30 |
DE69407448T2 (de) | 1998-04-16 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8327 | Change in the person/name/address of the patent owner |
Owner name: NEC COMPOUND SEMICONDUCTOR DEVICES, LTD., KAWASAKI |
|
8339 | Ceased/non-payment of the annual fee |