DE69432345D1 - Halbleiterdiodenlaser - Google Patents
HalbleiterdiodenlaserInfo
- Publication number
- DE69432345D1 DE69432345D1 DE69432345T DE69432345T DE69432345D1 DE 69432345 D1 DE69432345 D1 DE 69432345D1 DE 69432345 T DE69432345 T DE 69432345T DE 69432345 T DE69432345 T DE 69432345T DE 69432345 D1 DE69432345 D1 DE 69432345D1
- Authority
- DE
- Germany
- Prior art keywords
- diode laser
- semiconductor diode
- semiconductor
- laser
- diode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/2004—Confining in the direction perpendicular to the layer structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/204—Strongly index guided structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
- H01S5/2205—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers
- H01S5/2206—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers based on III-V materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
- H01S5/227—Buried mesa structure ; Striped active layer
- H01S5/2275—Buried mesa structure ; Striped active layer mesa created by etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
- H01S5/3211—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures characterised by special cladding layers, e.g. details on band-discontinuities
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
- H01S5/3211—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures characterised by special cladding layers, e.g. details on band-discontinuities
- H01S5/3216—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures characterised by special cladding layers, e.g. details on band-discontinuities quantum well or superlattice cladding layers
Landscapes
- Physics & Mathematics (AREA)
- Geometry (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Semiconductor Lasers (AREA)
- Led Devices (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP33322193A JPH07193333A (ja) | 1993-12-27 | 1993-12-27 | 半導体発光素子 |
Publications (2)
Publication Number | Publication Date |
---|---|
DE69432345D1 true DE69432345D1 (de) | 2003-04-30 |
DE69432345T2 DE69432345T2 (de) | 2003-12-24 |
Family
ID=18263676
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69432345T Expired - Fee Related DE69432345T2 (de) | 1993-12-27 | 1994-12-23 | Halbleiterdiodenlaser |
Country Status (4)
Country | Link |
---|---|
US (1) | US5619518A (de) |
EP (1) | EP0661784B1 (de) |
JP (1) | JPH07193333A (de) |
DE (1) | DE69432345T2 (de) |
Families Citing this family (21)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5811839A (en) * | 1994-09-01 | 1998-09-22 | Mitsubishi Chemical Corporation | Semiconductor light-emitting devices |
US6996150B1 (en) | 1994-09-14 | 2006-02-07 | Rohm Co., Ltd. | Semiconductor light emitting device and manufacturing method therefor |
US5751752A (en) * | 1994-09-14 | 1998-05-12 | Rohm Co., Ltd. | Semiconductor light emitting device and manufacturing method therefor |
JPH08307003A (ja) * | 1995-04-28 | 1996-11-22 | Mitsubishi Electric Corp | 半導体レーザ装置 |
JP3718548B2 (ja) * | 1995-10-20 | 2005-11-24 | ソニー株式会社 | 半導体発光装置の製造方法 |
SE506651C2 (sv) * | 1996-02-27 | 1998-01-26 | Ericsson Telefon Ab L M | Begravd heterostruktur |
JPH11163383A (ja) * | 1997-11-25 | 1999-06-18 | Oki Electric Ind Co Ltd | 半導体受光素子 |
GB2346735B (en) * | 1999-02-13 | 2004-03-31 | Sharp Kk | A semiconductor laser device |
JP3719047B2 (ja) | 1999-06-07 | 2005-11-24 | 日亜化学工業株式会社 | 窒化物半導体素子 |
EP1146615A4 (de) * | 1999-09-22 | 2005-10-19 | Mitsubishi Chem Corp | Leuchtendes element und modul mit leuchtenden elementen |
EP1130724A1 (de) | 2000-03-03 | 2001-09-05 | Alpes Lasers | Quantenkaskadierter Laser und sein Herstellungsverfahren |
DE10108079A1 (de) * | 2000-05-30 | 2002-09-12 | Osram Opto Semiconductors Gmbh | Optisch gepumpte oberflächenemittierende Halbleiterlaservorrichtung und Verfahren zu deren Herstellung |
US8280533B2 (en) * | 2000-06-20 | 2012-10-02 | Fisher-Rosemount Systems, Inc. | Continuously scheduled model parameter based adaptive controller |
JP3797151B2 (ja) * | 2001-07-05 | 2006-07-12 | ソニー株式会社 | レーザダイオード、光学ピックアップ装置、光ディスク装置および光通信装置 |
US6996149B2 (en) * | 2002-02-19 | 2006-02-07 | The Furukawa Electric Co., Ltd. | Semiconductor laser device and semiconductor laser module |
AU2003227230A1 (en) * | 2002-04-04 | 2003-10-20 | Sharp Kabushiki Kaisha | Semiconductor laser device |
GB0306279D0 (en) | 2003-03-19 | 2003-04-23 | Bookham Technology Plc | High power semiconductor laser with large optical superlattice waveguide |
JP2005167137A (ja) * | 2003-12-05 | 2005-06-23 | Mitsubishi Electric Corp | 半導体レーザ装置 |
JP4622466B2 (ja) * | 2004-11-12 | 2011-02-02 | 日亜化学工業株式会社 | 窒化物半導体素子 |
EP2015412B1 (de) * | 2007-07-06 | 2022-03-09 | Lumentum Operations LLC | Halbleiter-Laser mit schmaler Strahldivergenz. |
JP2012019040A (ja) * | 2010-07-07 | 2012-01-26 | Furukawa Electric Co Ltd:The | 面発光レーザ |
Family Cites Families (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS58175887A (ja) * | 1983-03-18 | 1983-10-15 | Hitachi Ltd | 半導体レ−ザ装置 |
US4706254A (en) * | 1983-05-12 | 1987-11-10 | Canon Kabushiki Kaisha | Semiconductor device and its fabrication |
JPS60189983A (ja) * | 1984-03-12 | 1985-09-27 | Nec Corp | 半導体発光素子 |
JPS62193192A (ja) * | 1986-02-19 | 1987-08-25 | Sharp Corp | 半導体レ−ザ素子 |
JPS62257782A (ja) * | 1986-05-01 | 1987-11-10 | Mitsubishi Electric Corp | 半導体の加工方法 |
JPS63150982A (ja) * | 1986-12-12 | 1988-06-23 | Fujitsu Ltd | 半導体発光装置 |
JPH03119777A (ja) * | 1989-10-02 | 1991-05-22 | Canon Inc | 埋込みヘテロ型半導体レーザ装置およびその製造方法 |
CA2055208C (en) * | 1990-11-09 | 2000-07-04 | Michinori Irikawa | A quatum barrier semiconductor optical device |
US5289486A (en) * | 1991-02-28 | 1994-02-22 | Omron Corporation | Semiconductor luminous element and superlattice structure |
US5213995A (en) * | 1992-04-16 | 1993-05-25 | At&T Bell Laboratories | Method of making an article comprising a periodic heteroepitaxial semiconductor structure |
JP3444610B2 (ja) * | 1992-09-29 | 2003-09-08 | 三菱化学株式会社 | 半導体レーザ装置 |
EP0637862A3 (de) * | 1993-08-05 | 1995-05-24 | Hitachi Ltd | Halbleiterlaservorrichtung und Herstellungsverfahren. |
-
1993
- 1993-12-27 JP JP33322193A patent/JPH07193333A/ja active Pending
-
1994
- 1994-12-23 US US08/363,261 patent/US5619518A/en not_active Expired - Fee Related
- 1994-12-23 EP EP94309789A patent/EP0661784B1/de not_active Expired - Lifetime
- 1994-12-23 DE DE69432345T patent/DE69432345T2/de not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
EP0661784B1 (de) | 2003-03-26 |
US5619518A (en) | 1997-04-08 |
DE69432345T2 (de) | 2003-12-24 |
EP0661784A2 (de) | 1995-07-05 |
JPH07193333A (ja) | 1995-07-28 |
EP0661784A3 (de) | 1995-12-27 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8339 | Ceased/non-payment of the annual fee |