DE69332164D1 - Anodische Verbindungsverfahren - Google Patents
Anodische VerbindungsverfahrenInfo
- Publication number
- DE69332164D1 DE69332164D1 DE69332164T DE69332164T DE69332164D1 DE 69332164 D1 DE69332164 D1 DE 69332164D1 DE 69332164 T DE69332164 T DE 69332164T DE 69332164 T DE69332164 T DE 69332164T DE 69332164 D1 DE69332164 D1 DE 69332164D1
- Authority
- DE
- Germany
- Prior art keywords
- connection method
- anodic connection
- anodic
- connection
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01P—MEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
- G01P15/00—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration
- G01P15/02—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses
- G01P15/08—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values
- G01P15/0802—Details
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01P—MEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
- G01P15/00—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration
- G01P15/02—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses
- G01P15/08—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values
- G01P15/093—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values by photoelectric pick-up
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01P—MEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
- G01P15/00—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration
- G01P15/02—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses
- G01P15/08—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values
- G01P15/12—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values by alteration of electrical resistance
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01P—MEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
- G01P15/00—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration
- G01P15/18—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration in two or more dimensions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
- H01L21/2003—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy characterised by the substrate
- H01L21/2007—Bonding of semiconductor wafers to insulating substrates or to semiconducting substrates using an intermediate insulating layer
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01P—MEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
- G01P15/00—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration
- G01P15/02—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses
- G01P15/08—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values
- G01P2015/0805—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values being provided with a particular type of spring-mass-system for defining the displacement of a seismic mass due to an external acceleration
- G01P2015/0808—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values being provided with a particular type of spring-mass-system for defining the displacement of a seismic mass due to an external acceleration for defining in-plane movement of the mass, i.e. movement of the mass in the plane of the substrate
- G01P2015/0811—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values being provided with a particular type of spring-mass-system for defining the displacement of a seismic mass due to an external acceleration for defining in-plane movement of the mass, i.e. movement of the mass in the plane of the substrate for one single degree of freedom of movement of the mass
- G01P2015/0814—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values being provided with a particular type of spring-mass-system for defining the displacement of a seismic mass due to an external acceleration for defining in-plane movement of the mass, i.e. movement of the mass in the plane of the substrate for one single degree of freedom of movement of the mass for translational movement of the mass, e.g. shuttle type
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01P—MEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
- G01P15/00—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration
- G01P15/02—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses
- G01P15/08—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values
- G01P2015/0805—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values being provided with a particular type of spring-mass-system for defining the displacement of a seismic mass due to an external acceleration
- G01P2015/0822—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values being provided with a particular type of spring-mass-system for defining the displacement of a seismic mass due to an external acceleration for defining out-of-plane movement of the mass
- G01P2015/084—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values being provided with a particular type of spring-mass-system for defining the displacement of a seismic mass due to an external acceleration for defining out-of-plane movement of the mass the mass being suspended at more than one of its sides, e.g. membrane-type suspension, so as to permit multi-axis movement of the mass
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T29/00—Metal working
- Y10T29/49—Method of mechanical manufacture
- Y10T29/49002—Electrical device making
- Y10T29/49117—Conductor or circuit manufacturing
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Pressure Sensors (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP28434192A JP3300060B2 (ja) | 1992-10-22 | 1992-10-22 | 加速度センサー及びその製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
DE69332164D1 true DE69332164D1 (de) | 2002-09-05 |
DE69332164T2 DE69332164T2 (de) | 2002-12-12 |
Family
ID=17677325
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69332164T Expired - Fee Related DE69332164T2 (de) | 1992-10-22 | 1993-10-21 | Anodische Verbindungsverfahren |
Country Status (4)
Country | Link |
---|---|
US (1) | US5673476A (de) |
EP (1) | EP0594182B1 (de) |
JP (1) | JP3300060B2 (de) |
DE (1) | DE69332164T2 (de) |
Families Citing this family (17)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE4426288C2 (de) * | 1994-07-26 | 2003-05-28 | Suss Microtec Test Sys Gmbh | Elektrode zum anodischen Bonden |
DE19616970B4 (de) * | 1996-04-27 | 2012-04-12 | Robert Bosch Gmbh | Verfahren zur Herstellung von mikromechanische Strukturen aufweisenden Halbleiterbauelementen |
US5936294A (en) * | 1996-05-28 | 1999-08-10 | Motorola, Inc. | Optical semiconductor component and method of fabrication |
IL122947A (en) * | 1998-01-15 | 2001-03-19 | Armament Dev Authority State O | Micro-electro-opto-mechanical inertial sensor with integrative optical sensing |
DE19810756A1 (de) * | 1998-03-12 | 1999-09-23 | Fraunhofer Ges Forschung | Sensoranordnung zur Messung von Druck, Kraft oder Meßgrößen, die sich auf Druck oder Kraft zurückführen lassen, Verfahren zur Herstellung der Sensoranordnung, Sensorelement und Verfahren zur Herstellung des Sensorelements |
US6506087B1 (en) * | 1998-05-01 | 2003-01-14 | Canon Kabushiki Kaisha | Method and manufacturing an image forming apparatus having improved spacers |
JP2000035396A (ja) | 1998-07-16 | 2000-02-02 | Canon Inc | 微小突起を有するプローブ、及びその製造方法 |
JP3489551B2 (ja) * | 2000-09-08 | 2004-01-19 | 株式会社村田製作所 | 真空容器の製造方法 |
FR2822817B1 (fr) * | 2001-03-28 | 2003-05-30 | Commissariat Energie Atomique | Procede de fabrication d'une structure a membrane micro-usinee |
JP2004301554A (ja) * | 2003-03-28 | 2004-10-28 | Canon Inc | 電位測定装置及び画像形成装置 |
KR100490756B1 (ko) * | 2003-06-10 | 2005-05-24 | 전자부품연구원 | 캡을 이용한 양극 접합 방법 |
FR2857502B1 (fr) | 2003-07-10 | 2006-02-24 | Soitec Silicon On Insulator | Substrats pour systemes contraints |
DE10354132A1 (de) * | 2003-11-19 | 2005-06-23 | Daimlerchrysler Ag | Verfahren zur Herstellung und zum Betreiben eines Sensors |
JP2007057349A (ja) | 2005-08-24 | 2007-03-08 | Seiko Epson Corp | 圧力センサ |
JP4817287B2 (ja) * | 2005-09-12 | 2011-11-16 | セイコーインスツル株式会社 | 力学量センサの製造方法 |
JP4813246B2 (ja) * | 2006-04-28 | 2011-11-09 | ユニヴァーシティ オブ サウサンプトン | ガラス物品への部材の接合方法 |
US8062956B2 (en) | 2009-08-26 | 2011-11-22 | Corning Incorporated | Semiconductor on insulator and methods of forming same using temperature gradient in an anodic bonding process |
Family Cites Families (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB1138401A (en) * | 1965-05-06 | 1969-01-01 | Mallory & Co Inc P R | Bonding |
JPS54131892A (en) * | 1978-04-05 | 1979-10-13 | Hitachi Ltd | Semiconductor pressure converter |
US4400869A (en) * | 1981-02-12 | 1983-08-30 | Becton Dickinson And Company | Process for producing high temperature pressure transducers and semiconductors |
US4384899A (en) * | 1981-11-09 | 1983-05-24 | Motorola Inc. | Bonding method adaptable for manufacturing capacitive pressure sensing elements |
US4452624A (en) * | 1982-12-21 | 1984-06-05 | The United States Of America As Represented By The Secretary Of The Navy | Method for bonding insulator to insulator |
GB2146566B (en) * | 1983-09-16 | 1986-11-26 | Standard Telephones Cables Ltd | Electrostatic bonding |
US4643532A (en) * | 1985-06-24 | 1987-02-17 | At&T Bell Laboratories | Field-assisted bonding method and articles produced thereby |
JPS62248264A (ja) * | 1986-04-21 | 1987-10-29 | Nippon Denso Co Ltd | 半導体式加速度センサの製造方法 |
DE3702412A1 (de) * | 1987-01-28 | 1988-08-18 | Philips Patentverwaltung | Druckaufnehmer mit einem siliziumkoerper |
FI78784C (fi) * | 1988-01-18 | 1989-09-11 | Vaisala Oy | Tryckgivarkonstruktion och foerfarande foer framstaellning daerav. |
DE4009090A1 (de) * | 1990-03-21 | 1991-09-26 | Bosch Gmbh Robert | Verfahren zur herstellung von mehrschichtigen siliziumstrukturen |
JP2527834B2 (ja) * | 1990-07-20 | 1996-08-28 | 三菱電機株式会社 | 陽極接合法 |
US5295395A (en) * | 1991-02-07 | 1994-03-22 | Hocker G Benjamin | Diaphragm-based-sensors |
ATE231287T1 (de) * | 1991-09-30 | 2003-02-15 | Canon Kk | Verfahren für anodische bindung mit lichtstrahlung |
-
1992
- 1992-10-22 JP JP28434192A patent/JP3300060B2/ja not_active Expired - Fee Related
-
1993
- 1993-10-21 DE DE69332164T patent/DE69332164T2/de not_active Expired - Fee Related
- 1993-10-21 EP EP93117100A patent/EP0594182B1/de not_active Expired - Lifetime
-
1995
- 1995-11-22 US US08/563,906 patent/US5673476A/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
EP0594182A3 (en) | 1997-09-24 |
JP3300060B2 (ja) | 2002-07-08 |
EP0594182B1 (de) | 2002-07-31 |
DE69332164T2 (de) | 2002-12-12 |
JPH06132544A (ja) | 1994-05-13 |
US5673476A (en) | 1997-10-07 |
EP0594182A2 (de) | 1994-04-27 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8339 | Ceased/non-payment of the annual fee |