DE69323884T2 - Elektrolumineszente Festkörpervorrichtung und Verfahren zu ihrer Herstellung - Google Patents
Elektrolumineszente Festkörpervorrichtung und Verfahren zu ihrer HerstellungInfo
- Publication number
- DE69323884T2 DE69323884T2 DE69323884T DE69323884T DE69323884T2 DE 69323884 T2 DE69323884 T2 DE 69323884T2 DE 69323884 T DE69323884 T DE 69323884T DE 69323884 T DE69323884 T DE 69323884T DE 69323884 T2 DE69323884 T2 DE 69323884T2
- Authority
- DE
- Germany
- Prior art keywords
- manufacture
- solid state
- electroluminescent device
- state electroluminescent
- solid
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 238000004519 manufacturing process Methods 0.000 title 1
- 238000000034 method Methods 0.000 title 1
- 239000007787 solid Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/34—Materials of the light emitting region containing only elements of Group IV of the Periodic Table
- H01L33/343—Materials of the light emitting region containing only elements of Group IV of the Periodic Table characterised by the doping materials
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S428/00—Stock material or miscellaneous articles
- Y10S428/917—Electroluminescent
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Led Devices (AREA)
- Electroluminescent Light Sources (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
EP93830421A EP0650200B1 (de) | 1993-10-20 | 1993-10-20 | Elektrolumineszente Festkörpervorrichtung und Verfahren zu ihrer Herstellung |
Publications (2)
Publication Number | Publication Date |
---|---|
DE69323884D1 DE69323884D1 (de) | 1999-04-15 |
DE69323884T2 true DE69323884T2 (de) | 1999-07-22 |
Family
ID=8215234
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69323884T Expired - Fee Related DE69323884T2 (de) | 1993-10-20 | 1993-10-20 | Elektrolumineszente Festkörpervorrichtung und Verfahren zu ihrer Herstellung |
Country Status (4)
Country | Link |
---|---|
US (2) | US5580663A (de) |
EP (1) | EP0650200B1 (de) |
JP (1) | JP3477855B2 (de) |
DE (1) | DE69323884T2 (de) |
Families Citing this family (17)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100377716B1 (ko) * | 1998-02-25 | 2003-03-26 | 인터내셔널 비지네스 머신즈 코포레이션 | 광학적 방사를 위해 희토류 원소로 도핑된 실리콘 구조체 및 방사방법 |
US6340826B1 (en) * | 1998-03-30 | 2002-01-22 | Agisilaos Iliadis | Infra-red light emitting Si-MOSFET |
US7655586B1 (en) * | 2003-05-29 | 2010-02-02 | Pentron Ceramics, Inc. | Dental restorations using nanocrystalline materials and methods of manufacture |
US6734453B2 (en) | 2000-08-08 | 2004-05-11 | Translucent Photonics, Inc. | Devices with optical gain in silicon |
KR100384892B1 (ko) * | 2000-12-01 | 2003-05-22 | 한국전자통신연구원 | 에르븀이 도핑된 실리콘나노점의 형성 방법 |
EP1588423A2 (de) * | 2003-01-22 | 2005-10-26 | Group IV Semiconductor Inc. | Mit seltenen erden dotierte gruppe iv nanokristalline schichten |
US20040151461A1 (en) * | 2003-01-22 | 2004-08-05 | Hill Steven E. | Broadband optical pump source for optical amplifiers, planar optical amplifiers, planar optical circuits and planar optical lasers fabricated using group IV semiconductor nanocrystals |
WO2004066345A2 (en) * | 2003-01-22 | 2004-08-05 | Group Iv Semiconductor Inc. | Doped semiconductor nanocrystal layers and preparation thereof |
US7148528B2 (en) * | 2003-07-02 | 2006-12-12 | Micron Technology, Inc. | Pinned photodiode structure and method of formation |
CN1849713A (zh) | 2003-09-08 | 2006-10-18 | 第四族半导体有限公司 | 固态白光发射器及使用其的显示器 |
JP4529646B2 (ja) * | 2004-11-09 | 2010-08-25 | ソニー株式会社 | 希土類元素イオンの拡散領域の製造方法および発光素子の製造方法および発光素子 |
US7320897B2 (en) * | 2005-03-23 | 2008-01-22 | Sharp Laboratories Of Amrica, Inc. | Electroluminescence device with nanotip diodes |
JP4956916B2 (ja) * | 2005-05-30 | 2012-06-20 | ソニー株式会社 | 発光素子及び発光装置 |
US7553043B2 (en) * | 2007-03-06 | 2009-06-30 | Venn Curtiss M | Light emitting apparatus for use in a container |
CN101950786B (zh) * | 2010-09-13 | 2013-03-27 | 北京大学 | 一种硅基发光二极管的制备方法 |
JP5103513B2 (ja) * | 2010-10-08 | 2012-12-19 | シャープ株式会社 | 発光装置 |
GB201019725D0 (en) * | 2010-11-22 | 2011-01-05 | Univ Surrey | Optoelectronic devices |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3527711A (en) * | 1963-04-16 | 1970-09-08 | Owens Illinois Inc | Process for preparing rare earth doped luminescent silica glass |
GB8711373D0 (en) * | 1987-05-14 | 1987-06-17 | Secr Defence | Electroluminescent silicon device |
US5249195A (en) * | 1992-06-30 | 1993-09-28 | At&T Bell Laboratories | Erbium doped optical devices |
US5322813A (en) * | 1992-08-31 | 1994-06-21 | International Business Machines Corporation | Method of making supersaturated rare earth doped semiconductor layers by chemical vapor deposition |
US5363398A (en) * | 1993-09-30 | 1994-11-08 | At&T Bell Laboratories | Absorption resonant rare earth-doped micro-cavities |
-
1993
- 1993-10-20 EP EP93830421A patent/EP0650200B1/de not_active Expired - Lifetime
- 1993-10-20 DE DE69323884T patent/DE69323884T2/de not_active Expired - Fee Related
-
1994
- 1994-09-30 US US08/316,045 patent/US5580663A/en not_active Expired - Lifetime
- 1994-10-20 JP JP27969094A patent/JP3477855B2/ja not_active Expired - Fee Related
-
1995
- 1995-10-17 US US08/544,328 patent/US5667905A/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
JP3477855B2 (ja) | 2003-12-10 |
JPH07221346A (ja) | 1995-08-18 |
EP0650200B1 (de) | 1999-03-10 |
EP0650200A1 (de) | 1995-04-26 |
DE69323884D1 (de) | 1999-04-15 |
US5580663A (en) | 1996-12-03 |
US5667905A (en) | 1997-09-16 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8339 | Ceased/non-payment of the annual fee |