DE69320520T2 - Verfahren zur Herstellung eines Heteroübergangsbipolartransistors - Google Patents

Verfahren zur Herstellung eines Heteroübergangsbipolartransistors

Info

Publication number
DE69320520T2
DE69320520T2 DE69320520T DE69320520T DE69320520T2 DE 69320520 T2 DE69320520 T2 DE 69320520T2 DE 69320520 T DE69320520 T DE 69320520T DE 69320520 T DE69320520 T DE 69320520T DE 69320520 T2 DE69320520 T2 DE 69320520T2
Authority
DE
Germany
Prior art keywords
manufacturing
bipolar transistor
heterojunction bipolar
heterojunction
transistor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69320520T
Other languages
English (en)
Other versions
DE69320520D1 (de
Inventor
Shin-Ichi Taka
Kouji Kimura
Hiroshi Naruse
Kuniaki Kumamaru
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Application granted granted Critical
Publication of DE69320520D1 publication Critical patent/DE69320520D1/de
Publication of DE69320520T2 publication Critical patent/DE69320520T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66234—Bipolar junction transistors [BJT]
    • H01L29/66242—Heterojunction transistors [HBT]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66234—Bipolar junction transistors [BJT]
    • H01L29/66272—Silicon vertical transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/73—Bipolar junction transistors
    • H01L29/732—Vertical transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/73—Bipolar junction transistors
    • H01L29/737—Hetero-junction transistors
    • H01L29/7371—Vertical transistors
    • H01L29/7378—Vertical transistors comprising lattice mismatched active layers, e.g. SiGe strained layer transistors

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Bipolar Transistors (AREA)
DE69320520T 1992-04-15 1993-04-15 Verfahren zur Herstellung eines Heteroübergangsbipolartransistors Expired - Fee Related DE69320520T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP4121283A JP2971246B2 (ja) 1992-04-15 1992-04-15 ヘテロバイポーラトランジスタの製造方法

Publications (2)

Publication Number Publication Date
DE69320520D1 DE69320520D1 (de) 1998-10-01
DE69320520T2 true DE69320520T2 (de) 1999-02-11

Family

ID=14807426

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69320520T Expired - Fee Related DE69320520T2 (de) 1992-04-15 1993-04-15 Verfahren zur Herstellung eines Heteroübergangsbipolartransistors

Country Status (5)

Country Link
US (2) US5365090A (de)
EP (1) EP0566112B1 (de)
JP (1) JP2971246B2 (de)
KR (1) KR0132769B1 (de)
DE (1) DE69320520T2 (de)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7285470B2 (en) 2003-04-10 2007-10-23 Infineon Technologies Ag Method for the production of a bipolar semiconductor component, especially a bipolar transistor, and corresponding bipolar semiconductor component

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JP3156436B2 (ja) * 1993-04-05 2001-04-16 日本電気株式会社 ヘテロ接合バイポーラトランジスタ
DE69409780T2 (de) * 1993-12-20 1998-11-12 Nec Corp Verfahren zur Herstellung opto-elektrischer Halbleiterbauelemente
US5646073A (en) * 1995-01-18 1997-07-08 Lsi Logic Corporation Process for selective deposition of polysilicon over single crystal silicon substrate and resulting product
US5620907A (en) * 1995-04-10 1997-04-15 Lucent Technologies Inc. Method for making a heterojunction bipolar transistor
US5834800A (en) * 1995-04-10 1998-11-10 Lucent Technologies Inc. Heterojunction bipolar transistor having mono crystalline SiGe intrinsic base and polycrystalline SiGe and Si extrinsic base regions
KR100275544B1 (ko) * 1995-12-20 2001-01-15 이계철 선택적 컬렉터 박막 성장을 이용한 초자기정렬 바이폴러 트랜지스터의 제조방법
KR970054343A (ko) * 1995-12-20 1997-07-31 이준 규소/규소게르마늄 쌍극자 트랜지스터 제조방법
DE19609933A1 (de) * 1996-03-14 1997-09-18 Daimler Benz Ag Verfahren zur Herstellung eines Heterobipolartransistors
JP2877108B2 (ja) * 1996-12-04 1999-03-31 日本電気株式会社 半導体装置およびその製造方法
US5773350A (en) * 1997-01-28 1998-06-30 National Semiconductor Corporation Method for forming a self-aligned bipolar junction transistor with silicide extrinsic base contacts and selective epitaxial grown intrinsic base
JP3137044B2 (ja) * 1997-08-20 2001-02-19 日本電気株式会社 半導体装置及びその製造方法
JPH11126781A (ja) 1997-10-24 1999-05-11 Nec Corp 半導体装置及びその製造方法
JP2000012552A (ja) 1998-06-17 2000-01-14 Toshiba Corp 半導体装置の製造方法及び半導体装置
US6368930B1 (en) 1998-10-02 2002-04-09 Ziptronix Self aligned symmetric process and device
FR2800197B1 (fr) * 1999-10-25 2003-02-07 St Microelectronics Sa Procede de definition de deux zones autoalignees a la surface superieure d'un substrat
US6251738B1 (en) * 2000-01-10 2001-06-26 International Business Machines Corporation Process for forming a silicon-germanium base of heterojunction bipolar transistor
US6573539B2 (en) * 2000-01-10 2003-06-03 International Business Machines Corporation Heterojunction bipolar transistor with silicon-germanium base
US6346453B1 (en) * 2000-01-27 2002-02-12 Sige Microsystems Inc. Method of producing a SI-GE base heterojunction bipolar device
US6674102B2 (en) * 2001-01-25 2004-01-06 International Business Machines Corporation Sti pull-down to control SiGe facet growth
US7214593B2 (en) * 2001-02-01 2007-05-08 International Business Machines Corporation Passivation for improved bipolar yield
US6534802B1 (en) * 2001-05-07 2003-03-18 Newport Fab, Llc Method for reducing base to collector capacitance and related structure
EP1280189A1 (de) * 2001-07-16 2003-01-29 Alcatel Selektiv-epitaktisches Wachstumverfahren und dadurch hergestellter Bipolartransistor
US6774455B2 (en) * 2001-10-01 2004-08-10 Texas Instruments Incorporated Semiconductor device with a collector contact in a depressed well-region
US6656809B2 (en) * 2002-01-15 2003-12-02 International Business Machines Corporation Method to fabricate SiGe HBTs with controlled current gain and improved breakdown voltage characteristics
US6936519B2 (en) * 2002-08-19 2005-08-30 Chartered Semiconductor Manufacturing, Ltd. Double polysilicon bipolar transistor and method of manufacture therefor
US7011590B2 (en) * 2003-07-08 2006-03-14 Shimano, Inc. Shift assist apparatus for a bicycle transmission
US6987055B2 (en) * 2004-01-09 2006-01-17 Micron Technology, Inc. Methods for deposition of semiconductor material
ATE495547T1 (de) * 2005-01-18 2011-01-15 Nxp Bv Bipolartransistor und herstellungsverfahren dafür
US7932156B2 (en) * 2005-08-03 2011-04-26 Nxp B.V. Bipolar transistor having a second, base-comprising region consisting of a first layer, a second, constrictive, layer, and a third layer
US7772060B2 (en) * 2006-06-21 2010-08-10 Texas Instruments Deutschland Gmbh Integrated SiGe NMOS and PMOS transistors
KR101244898B1 (ko) * 2006-06-28 2013-03-19 삼성디스플레이 주식회사 유기 박막 트랜지스터 기판 및 그 제조 방법
US7598539B2 (en) * 2007-06-01 2009-10-06 Infineon Technologies Ag Heterojunction bipolar transistor and method for making same
US8975146B2 (en) * 2013-05-01 2015-03-10 International Business Machines Corporation Trench isolation structures and methods for bipolar junction transistors
US9324884B1 (en) * 2015-02-12 2016-04-26 Cindy X. Qiu Metal oxynitride diode devices
DE102016207536B4 (de) * 2016-05-02 2020-03-19 Infineon Technologies Dresden Gmbh Verfahren zum Herstellen eines Bipolartransistors
US10916642B2 (en) * 2019-04-18 2021-02-09 Globalfoundries U.S. Inc. Heterojunction bipolar transistor with emitter base junction oxide interface
TWI755694B (zh) * 2020-03-12 2022-02-21 力晶積成電子製造股份有限公司 半導體元件及其製造方法

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NL266513A (de) * 1960-07-01
JPS6010776A (ja) * 1983-06-30 1985-01-19 Fujitsu Ltd バイポーラトランジスタの製造方法
EP0177246B1 (de) * 1984-09-29 1988-08-17 Kabushiki Kaisha Toshiba Heteroübergangbipolartransistor und Verfahren zu seiner Herstellung
JPS61147571A (ja) * 1984-12-21 1986-07-05 Toshiba Corp ヘテロ接合バイポ−ラトランジスタの製造方法
JPS61198776A (ja) * 1985-02-28 1986-09-03 Fujitsu Ltd ヘテロ接合バイポ−ラトランジスタおよびその製造方法
GB8708926D0 (en) * 1987-04-14 1987-05-20 British Telecomm Bipolar transistor
JPS63291468A (ja) * 1987-05-25 1988-11-29 Toshiba Corp ヘテロ接合バイポ−ラトランジスタ
JPS6489365A (en) * 1987-09-29 1989-04-03 Nec Corp Semiconductor device
NL8800157A (nl) * 1988-01-25 1989-08-16 Philips Nv Halfgeleiderinrichting en werkwijze ter vervaardiging daarvan.
JPH0244772A (ja) * 1988-08-05 1990-02-14 Hitachi Ltd 半導体装置及びその製造方法
US4935797A (en) * 1988-10-31 1990-06-19 International Business Machines Corporation Heterojunction bipolar transistors
US5198689A (en) * 1988-11-30 1993-03-30 Fujitsu Limited Heterojunction bipolar transistor
US5140400A (en) * 1989-03-29 1992-08-18 Canon Kabushiki Kaisha Semiconductor device and photoelectric converting apparatus using the same
EP0430279A3 (en) * 1989-12-01 1991-07-03 Hewlett-Packard Company Si/sige heterojunction bipolar transistor utilizing advanced epitaxial deposition techniques and method of manufacture
EP0550962A3 (en) * 1992-01-08 1993-09-29 American Telephone And Telegraph Company Heterojunction bipolar transistor

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7285470B2 (en) 2003-04-10 2007-10-23 Infineon Technologies Ag Method for the production of a bipolar semiconductor component, especially a bipolar transistor, and corresponding bipolar semiconductor component

Also Published As

Publication number Publication date
KR930022584A (ko) 1993-11-24
JPH05291286A (ja) 1993-11-05
EP0566112A2 (de) 1993-10-20
JP2971246B2 (ja) 1999-11-02
US5399511A (en) 1995-03-21
US5365090A (en) 1994-11-15
EP0566112B1 (de) 1998-08-26
KR0132769B1 (ko) 1998-04-16
EP0566112A3 (en) 1994-09-07
DE69320520D1 (de) 1998-10-01

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee