US5689603A
(en)
*
|
1993-07-07 |
1997-11-18 |
Huth; Gerald C. |
Optically interactive nanostructure
|
US6734451B2
(en)
|
1993-11-02 |
2004-05-11 |
Matsushita Electric Industrial Co., Ltd. |
Aggregate of semiconductor micro-needles and method of manufacturing the same, and semiconductor apparatus and method of manufacturing the same
|
EP0893834B1
(de)
*
|
1993-11-02 |
2004-04-07 |
Matsushita Electric Industrial Co., Ltd |
Halbleiterbauelement mit einem Aggregat von Mikro-Nadeln aus Halbleitermaterial
|
DE4409863C1
(de)
*
|
1994-03-22 |
1995-05-04 |
Siemens Ag |
Verfahren zur Herstellung eines Einzelelektronen-Bauelementes
|
AU3894595A
(en)
*
|
1994-11-08 |
1996-05-31 |
Spectra Science Corporation |
Semiconductor nanocrystal display materials and display apparatus employing same
|
DE19522351A1
(de)
*
|
1995-06-20 |
1997-01-09 |
Max Planck Gesellschaft |
Verfahren zur Herstellung von Quantenstrukturen, insbesondere von Quantenpunkten und Tunnelbarrieren sowie Bauelemente mit solchen Quantenstrukturen
|
US5703394A
(en)
*
|
1996-06-10 |
1997-12-30 |
Motorola |
Integrated electro-optical package
|
WO1997049132A1
(en)
*
|
1996-06-20 |
1997-12-24 |
Jeffrey Frey |
Light-emitting semiconductor device
|
US5976957A
(en)
*
|
1996-10-28 |
1999-11-02 |
Sony Corporation |
Method of making silicon quantum wires on a substrate
|
US6107653A
(en)
*
|
1997-06-24 |
2000-08-22 |
Massachusetts Institute Of Technology |
Controlling threading dislocation densities in Ge on Si using graded GeSi layers and planarization
|
US6340826B1
(en)
*
|
1998-03-30 |
2002-01-22 |
Agisilaos Iliadis |
Infra-red light emitting Si-MOSFET
|
US7227176B2
(en)
*
|
1998-04-10 |
2007-06-05 |
Massachusetts Institute Of Technology |
Etch stop layer system
|
FR2789496B1
(fr)
*
|
1999-02-10 |
2002-06-07 |
Commissariat Energie Atomique |
Dispositif emetteur et guide de lumiere, avec une region active de silicium contenant des centres radiatifs, et procede de fabrication d'un tel dispositif
|
DE19933564C1
(de)
*
|
1999-07-16 |
2001-01-25 |
Infineon Technologies Ag |
Verfahren zur Herstellung eines Vertikal-Halbleitertransistorbauelements und Vertikal-Halbleitertransistorbauelement
|
EP1221179A4
(de)
*
|
1999-09-10 |
2006-12-13 |
Starmega Corp |
Stark texturierte atomare kanten und punkte
|
US7019333B1
(en)
|
1999-11-16 |
2006-03-28 |
Kabushiki Kaisha Toshiba |
Photon source
|
GB2377550B
(en)
*
|
1999-11-23 |
2003-11-12 |
Toshiba Res Europ Ltd |
A photon source
|
DE10006738C2
(de)
|
2000-02-15 |
2002-01-17 |
Osram Opto Semiconductors Gmbh |
Lichtemittierendes Bauelement mit verbesserter Lichtauskopplung und Verfahren zu seiner Herstellung
|
US7205578B2
(en)
|
2000-02-15 |
2007-04-17 |
Osram Gmbh |
Semiconductor component which emits radiation, and method for producing the same
|
US6836494B1
(en)
*
|
2000-05-31 |
2004-12-28 |
Lucent Technologies Inc. |
Structure and method for processing optical energy
|
JP2004507084A
(ja)
*
|
2000-08-16 |
2004-03-04 |
マサチューセッツ インスティテュート オブ テクノロジー |
グレーデッドエピタキシャル成長を用いた半導体品の製造プロセス
|
US7301199B2
(en)
*
|
2000-08-22 |
2007-11-27 |
President And Fellows Of Harvard College |
Nanoscale wires and related devices
|
US20060175601A1
(en)
*
|
2000-08-22 |
2006-08-10 |
President And Fellows Of Harvard College |
Nanoscale wires and related devices
|
AU2001286649B2
(en)
*
|
2000-08-22 |
2007-04-05 |
President And Fellows Of Harvard College |
Doped elongated semiconductors, growing such semiconductors, devices including such semiconductors and fabricating such devices
|
US6448582B1
(en)
|
2000-09-21 |
2002-09-10 |
Yale University |
High modulation frequency light emitting device exhibiting spatial relocation of minority carriers to a non-radiative recombination region
|
KR100991573B1
(ko)
|
2000-12-11 |
2010-11-04 |
프레지던트 앤드 펠로우즈 오브 하버드 칼리지 |
나노센서
|
DE10104561A1
(de)
*
|
2001-02-01 |
2002-08-22 |
Infineon Technologies Ag |
Quantenpunkt-Struktur, Bauelement mit optoelektronischer Wechselwirkung und Verfahren zum Herstellen einer Quantenpunkt-Struktur
|
KR100411613B1
(ko)
*
|
2001-02-26 |
2003-12-18 |
한국표준과학연구원 |
광전자 소자용 실리콘 박막 구조체 및 그 제조방법
|
US6522063B2
(en)
*
|
2001-03-28 |
2003-02-18 |
Epitech Corporation |
Light emitting diode
|
AU2002307008C1
(en)
|
2001-03-30 |
2008-10-30 |
The Regents Of The University Of California |
Methods of fabricating nanostructures and nanowires and devices fabricated therefrom
|
WO2002082514A1
(en)
*
|
2001-04-04 |
2002-10-17 |
Massachusetts Institute Of Technology |
A method for semiconductor device fabrication
|
KR100828351B1
(ko)
*
|
2001-04-17 |
2008-05-08 |
삼성전자주식회사 |
발광 소자 및 이를 적용한 디스플레이 장치
|
JP2004535066A
(ja)
*
|
2001-05-18 |
2004-11-18 |
プレジデント・アンド・フェロウズ・オブ・ハーバード・カレッジ |
ナノスケールワイヤ及び関連デバイス
|
GB2380605B
(en)
|
2001-10-02 |
2004-01-14 |
Toshiba Res Europ Ltd |
A photon source and method of its fabrication and operation
|
NO315511B1
(no)
*
|
2001-12-05 |
2003-09-15 |
Kjetil Naesje |
Fremgangsmåte og anordning for å hindre utilsiktet utströmning av et fluidfra en drikkebeholder
|
KR100446622B1
(ko)
*
|
2002-01-10 |
2004-09-04 |
삼성전자주식회사 |
실리콘 광소자 및 이를 적용한 발광 디바이스 장치
|
KR100940530B1
(ko)
*
|
2003-01-17 |
2010-02-10 |
삼성전자주식회사 |
실리콘 광소자 제조방법 및 이에 의해 제조된 실리콘광소자 및 이를 적용한 화상 입력 및/또는 출력장치
|
KR100459898B1
(ko)
*
|
2002-03-07 |
2004-12-04 |
삼성전자주식회사 |
실리콘 발광소자 및 이를 채용한 디스플레이 장치
|
KR100455288B1
(ko)
*
|
2002-03-08 |
2004-11-06 |
삼성전자주식회사 |
실리콘 발광소자를 이용한 평판형 표시장치
|
TWI220319B
(en)
*
|
2002-03-11 |
2004-08-11 |
Solidlite Corp |
Nano-wire light emitting device
|
AU2003222003A1
(en)
*
|
2002-03-14 |
2003-09-29 |
Amberwave Systems Corporation |
Methods for fabricating strained layers on semiconductor substrates
|
US7192533B2
(en)
*
|
2002-03-28 |
2007-03-20 |
Koninklijke Philips Electronics N.V. |
Method of manufacturing nanowires and electronic device
|
TW529188B
(en)
*
|
2002-04-26 |
2003-04-21 |
Univ Nat Taiwan |
Metal oxide silicon structure with increased illumination efficiency by using nanometer structure
|
US20030227057A1
(en)
*
|
2002-06-07 |
2003-12-11 |
Lochtefeld Anthony J. |
Strained-semiconductor-on-insulator device structures
|
US7074623B2
(en)
*
|
2002-06-07 |
2006-07-11 |
Amberwave Systems Corporation |
Methods of forming strained-semiconductor-on-insulator finFET device structures
|
US6995430B2
(en)
|
2002-06-07 |
2006-02-07 |
Amberwave Systems Corporation |
Strained-semiconductor-on-insulator device structures
|
US7335545B2
(en)
*
|
2002-06-07 |
2008-02-26 |
Amberwave Systems Corporation |
Control of strain in device layers by prevention of relaxation
|
US7307273B2
(en)
*
|
2002-06-07 |
2007-12-11 |
Amberwave Systems Corporation |
Control of strain in device layers by selective relaxation
|
WO2004010552A1
(en)
|
2002-07-19 |
2004-01-29 |
President And Fellows Of Harvard College |
Nanoscale coherent optical components
|
US7229498B2
(en)
*
|
2002-10-29 |
2007-06-12 |
Midwest Research Institute |
Nanostructures produced by phase-separation during growth of (III-V)1-x(IV2)x alloys
|
EP1565397A1
(de)
*
|
2002-11-18 |
2005-08-24 |
Koninklijke Philips Electronics N.V. |
Dispersion von nanodrähten aus halbleitermaterial
|
US7122842B2
(en)
*
|
2003-09-08 |
2006-10-17 |
Group Iv Semiconductor Inc. |
Solid state white light emitter and display using same
|
US9085729B2
(en)
*
|
2004-02-09 |
2015-07-21 |
Lg Display Co., Ltd. |
Blue emitters for use in organic electroluminescence devices
|
US20090227107A9
(en)
*
|
2004-02-13 |
2009-09-10 |
President And Fellows Of Havard College |
Nanostructures Containing Metal Semiconductor Compounds
|
US20050208769A1
(en)
*
|
2004-03-19 |
2005-09-22 |
Manish Sharma |
Semiconductor structure
|
CA2567156A1
(en)
*
|
2004-05-17 |
2006-07-20 |
Cambrios Technology Corp. |
Biofabrication of transistors including field effect transistors
|
US7112455B2
(en)
|
2004-06-10 |
2006-09-26 |
Freescale Semiconductor, Inc |
Semiconductor optical devices and method for forming
|
WO2006107312A1
(en)
*
|
2004-06-15 |
2006-10-12 |
President And Fellows Of Harvard College |
Nanosensors
|
EP1766108A1
(de)
|
2004-06-25 |
2007-03-28 |
Btg International Limited |
Bildung von nanowhiskers auf einem andersartigen material
|
KR100612875B1
(ko)
*
|
2004-11-24 |
2006-08-14 |
삼성전자주식회사 |
실리콘 광소자 제조방법 및 이에 의해 제조된 실리콘광소자 및 이를 적용한 화상 입력 및/또는 출력장치
|
KR20060059327A
(ko)
*
|
2004-11-27 |
2006-06-01 |
삼성전자주식회사 |
실리콘 광소자 제조방법 및 이에 의해 제조된 실리콘광소자 및 이를 적용한 화상 입력 및/또는 출력장치
|
US20060113603A1
(en)
*
|
2004-12-01 |
2006-06-01 |
Amberwave Systems Corporation |
Hybrid semiconductor-on-insulator structures and related methods
|
US7393733B2
(en)
*
|
2004-12-01 |
2008-07-01 |
Amberwave Systems Corporation |
Methods of forming hybrid fin field-effect transistor structures
|
EP1831973A2
(de)
*
|
2004-12-06 |
2007-09-12 |
The President and Fellows of Harvard College |
Nanoskalige drahtgebundene datenspeicherung
|
US20100227382A1
(en)
*
|
2005-05-25 |
2010-09-09 |
President And Fellows Of Harvard College |
Nanoscale sensors
|
WO2006132659A2
(en)
*
|
2005-06-06 |
2006-12-14 |
President And Fellows Of Harvard College |
Nanowire heterostructures
|
KR100734881B1
(ko)
*
|
2005-12-08 |
2007-07-03 |
한국전자통신연구원 |
측면 반사경을 이용한 실리콘 발광소자
|
KR100779078B1
(ko)
*
|
2005-12-09 |
2007-11-27 |
한국전자통신연구원 |
빛의 방출 효율을 향상시킬 수 있는 실리콘 발광 소자 및그 제조방법
|
EP1804350A1
(de)
*
|
2005-12-27 |
2007-07-04 |
Interuniversitair Microelektronica Centrum |
Halbleiterlaser mit langgestreckten Nanostrukturen
|
US8835941B2
(en)
*
|
2006-02-09 |
2014-09-16 |
Qd Vision, Inc. |
Displays including semiconductor nanocrystals and methods of making same
|
US7826336B2
(en)
|
2006-02-23 |
2010-11-02 |
Qunano Ab |
Data storage nanostructures
|
WO2007143197A2
(en)
|
2006-06-02 |
2007-12-13 |
Qd Vision, Inc. |
Light-emitting devices and displays with improved performance
|
DE102006013670A1
(de)
*
|
2006-03-24 |
2007-09-27 |
X-Fab Semiconductor Foundries Ag |
Breitbandig entspiegelte optische Bauteile mit gekrümmten Oberflächen
|
ATE497023T1
(de)
|
2006-06-12 |
2011-02-15 |
Harvard College |
Nanosensoren und entsprechende technologien
|
US7569984B2
(en)
*
|
2006-06-19 |
2009-08-04 |
Atomic Energy Council-Institute Of Nuclear Energy Research |
White-light fluorescent lamp having luminescence layer with silicon quantum dots
|
WO2008033303A2
(en)
|
2006-09-11 |
2008-03-20 |
President And Fellows Of Harvard College |
Branched nanoscale wires
|
JP2010508620A
(ja)
*
|
2006-09-12 |
2010-03-18 |
キユーデイー・ビジヨン・インコーポレーテツド |
所定のパターンを表示するために有用なエレクトロルミネセントディスプレイ
|
TWI463713B
(zh)
|
2006-11-09 |
2014-12-01 |
Nanosys Inc |
用於奈米導線對準及沈積的方法
|
WO2008063653A1
(en)
|
2006-11-21 |
2008-05-29 |
Qd Vision, Inc. |
Semiconductor nanocrystals and compositions and devices including same
|
WO2008063652A1
(en)
|
2006-11-21 |
2008-05-29 |
Qd Vision, Inc. |
Blue emitting semiconductor nanocrystals and compositions and devices including same
|
WO2008063658A2
(en)
|
2006-11-21 |
2008-05-29 |
Qd Vision, Inc. |
Semiconductor nanocrystals and compositions and devices including same
|
WO2008063657A2
(en)
*
|
2006-11-21 |
2008-05-29 |
Qd Vision, Inc. |
Light emitting devices and displays with improved performance
|
WO2008127314A1
(en)
|
2006-11-22 |
2008-10-23 |
President And Fellows Of Harvard College |
High-sensitivity nanoscale wire sensors
|
US8183587B2
(en)
|
2006-12-22 |
2012-05-22 |
Qunano Ab |
LED with upstanding nanowire structure and method of producing such
|
EP2126986B1
(de)
|
2006-12-22 |
2019-09-18 |
QuNano AB |
Led mit aufrechter nanodrahtstruktur und herstellungsverfahren dafür
|
EP2091862B1
(de)
*
|
2006-12-22 |
2019-12-11 |
QuNano AB |
Erhöhte led und herstellungsverfahren dafür
|
US8049203B2
(en)
|
2006-12-22 |
2011-11-01 |
Qunano Ab |
Nanoelectronic structure and method of producing such
|
WO2008079077A2
(en)
*
|
2006-12-22 |
2008-07-03 |
Qunano Ab |
Nanoelectronic structure and method of producing such
|
US7544591B2
(en)
*
|
2007-01-18 |
2009-06-09 |
Hewlett-Packard Development Company, L.P. |
Method of creating isolated electrodes in a nanowire-based device
|
US7892610B2
(en)
*
|
2007-05-07 |
2011-02-22 |
Nanosys, Inc. |
Method and system for printing aligned nanowires and other electrical devices
|
US8273591B2
(en)
*
|
2008-03-25 |
2012-09-25 |
International Business Machines Corporation |
Super lattice/quantum well nanowires
|
US9525148B2
(en)
|
2008-04-03 |
2016-12-20 |
Qd Vision, Inc. |
Device including quantum dots
|
KR101995371B1
(ko)
|
2008-04-03 |
2019-07-02 |
삼성 리서치 아메리카 인코포레이티드 |
양자점들을 포함하는 발광 소자
|
US20110182850A1
(en)
|
2009-04-10 |
2011-07-28 |
Trixi Brandl |
Organic compounds and their uses
|
JP2012528020A
(ja)
|
2009-05-26 |
2012-11-12 |
ナノシス・インク. |
ナノワイヤおよび他のデバイスの電場沈着のための方法およびシステム
|
WO2011038228A1
(en)
|
2009-09-24 |
2011-03-31 |
President And Fellows Of Harvard College |
Bent nanowires and related probing of species
|
US7951638B1
(en)
*
|
2010-01-07 |
2011-05-31 |
Atomic Energy Council-Institute of Nuclear Research |
Method for making a textured surface on a solar cell
|
WO2014124486A1
(en)
*
|
2013-02-13 |
2014-08-21 |
Meaglow Ltd |
Light emitting device using super-luminescence in semiconductor layer grown with moss-burstein effect
|
CA2889103A1
(fr)
*
|
2015-04-21 |
2016-10-21 |
Claudine Allen |
Materiaux nanocomposites hybrides et leur application dans un systeme de projection volumetrique
|
JP2017092076A
(ja)
*
|
2015-11-02 |
2017-05-25 |
株式会社ソディック |
発光素子
|
KR101642248B1
(ko)
*
|
2016-03-03 |
2016-07-22 |
(주)아모레퍼시픽 |
피부 미용기기
|