DE69221470T2 - Verfahren zur herstellung eines mehrschichtigen keramikteils sowie mehrschichtiges keramikteil - Google Patents

Verfahren zur herstellung eines mehrschichtigen keramikteils sowie mehrschichtiges keramikteil

Info

Publication number
DE69221470T2
DE69221470T2 DE69221470T DE69221470T DE69221470T2 DE 69221470 T2 DE69221470 T2 DE 69221470T2 DE 69221470 T DE69221470 T DE 69221470T DE 69221470 T DE69221470 T DE 69221470T DE 69221470 T2 DE69221470 T2 DE 69221470T2
Authority
DE
Germany
Prior art keywords
multilayer ceramic
ceramic part
producing
multilayer
ceramic
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69221470T
Other languages
English (en)
Other versions
DE69221470D1 (de
Inventor
Keizou Kawamura
Makoto Kobayashi
Akira Nakamura
Norikazu Yasuda
Suguru Kondoh
Taro Miura
Shinya Nakai
Tadao Fujii
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
TDK Corp
Original Assignee
TDK Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by TDK Corp filed Critical TDK Corp
Application granted granted Critical
Publication of DE69221470D1 publication Critical patent/DE69221470D1/de
Publication of DE69221470T2 publication Critical patent/DE69221470T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B18/00—Layered products essentially comprising ceramics, e.g. refractory products
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B37/00—Joining burned ceramic articles with other burned ceramic articles or other articles by heating
    • C04B37/003—Joining burned ceramic articles with other burned ceramic articles or other articles by heating by means of an interlayer consisting of a combination of materials selected from glass, or ceramic material with metals, metal oxides or metal salts
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES OR LIGHT-SENSITIVE DEVICES, OF THE ELECTROLYTIC TYPE
    • H01G4/00—Fixed capacitors; Processes of their manufacture
    • H01G4/30—Stacked capacitors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
    • H01L21/4814—Conductive parts
    • H01L21/4846—Leads on or in insulating or insulated substrates, e.g. metallisation
    • H01L21/4857—Multilayer substrates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
    • H01L21/4814—Conductive parts
    • H01L21/4846—Leads on or in insulating or insulated substrates, e.g. metallisation
    • H01L21/4867—Applying pastes or inks, e.g. screen printing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
    • H01L23/49805—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers the leads being also applied on the sidewalls or the bottom of the substrate, e.g. leadless packages for surface mounting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
    • H01L23/49866—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers characterised by the materials
    • H01L23/49883—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers characterised by the materials the conductive materials containing organic materials or pastes, e.g. for thick films
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/538—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames the interconnection structure between a plurality of semiconductor chips being formed on, or in, insulating substrates
    • H01L23/5383—Multilayer substrates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/538—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames the interconnection structure between a plurality of semiconductor chips being formed on, or in, insulating substrates
    • H01L23/5384—Conductive vias through the substrate with or without pins, e.g. buried coaxial conductors
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/46—Manufacturing multilayer circuits
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/46—Manufacturing multilayer circuits
    • H05K3/4611—Manufacturing multilayer circuits by laminating two or more circuit boards
    • H05K3/4626—Manufacturing multilayer circuits by laminating two or more circuit boards characterised by the insulating layers or materials
    • H05K3/4629—Manufacturing multilayer circuits by laminating two or more circuit boards characterised by the insulating layers or materials laminating inorganic sheets comprising printed circuits, e.g. green ceramic sheets
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2237/00—Aspects relating to ceramic laminates or to joining of ceramic articles with other articles by heating
    • C04B2237/02—Aspects relating to interlayers, e.g. used to join ceramic articles with other articles by heating
    • C04B2237/10—Glass interlayers, e.g. frit or flux
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2237/00—Aspects relating to ceramic laminates or to joining of ceramic articles with other articles by heating
    • C04B2237/02—Aspects relating to interlayers, e.g. used to join ceramic articles with other articles by heating
    • C04B2237/12—Metallic interlayers
    • C04B2237/124—Metallic interlayers based on copper
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2237/00—Aspects relating to ceramic laminates or to joining of ceramic articles with other articles by heating
    • C04B2237/02—Aspects relating to interlayers, e.g. used to join ceramic articles with other articles by heating
    • C04B2237/12—Metallic interlayers
    • C04B2237/125—Metallic interlayers based on noble metals, e.g. silver
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2237/00—Aspects relating to ceramic laminates or to joining of ceramic articles with other articles by heating
    • C04B2237/02—Aspects relating to interlayers, e.g. used to join ceramic articles with other articles by heating
    • C04B2237/12—Metallic interlayers
    • C04B2237/126—Metallic interlayers wherein the active component for bonding is not the largest fraction of the interlayer
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2237/00—Aspects relating to ceramic laminates or to joining of ceramic articles with other articles by heating
    • C04B2237/30—Composition of layers of ceramic laminates or of ceramic or metallic articles to be joined by heating, e.g. Si substrates
    • C04B2237/32—Ceramic
    • C04B2237/34—Oxidic
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2237/00—Aspects relating to ceramic laminates or to joining of ceramic articles with other articles by heating
    • C04B2237/30—Composition of layers of ceramic laminates or of ceramic or metallic articles to be joined by heating, e.g. Si substrates
    • C04B2237/32—Ceramic
    • C04B2237/34—Oxidic
    • C04B2237/341—Silica or silicates
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2237/00—Aspects relating to ceramic laminates or to joining of ceramic articles with other articles by heating
    • C04B2237/30—Composition of layers of ceramic laminates or of ceramic or metallic articles to be joined by heating, e.g. Si substrates
    • C04B2237/32—Ceramic
    • C04B2237/34—Oxidic
    • C04B2237/343—Alumina or aluminates
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2237/00—Aspects relating to ceramic laminates or to joining of ceramic articles with other articles by heating
    • C04B2237/30—Composition of layers of ceramic laminates or of ceramic or metallic articles to be joined by heating, e.g. Si substrates
    • C04B2237/32—Ceramic
    • C04B2237/34—Oxidic
    • C04B2237/345—Refractory metal oxides
    • C04B2237/346—Titania or titanates
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2237/00—Aspects relating to ceramic laminates or to joining of ceramic articles with other articles by heating
    • C04B2237/30—Composition of layers of ceramic laminates or of ceramic or metallic articles to be joined by heating, e.g. Si substrates
    • C04B2237/32—Ceramic
    • C04B2237/34—Oxidic
    • C04B2237/345—Refractory metal oxides
    • C04B2237/348—Zirconia, hafnia, zirconates or hafnates
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2237/00—Aspects relating to ceramic laminates or to joining of ceramic articles with other articles by heating
    • C04B2237/50—Processing aspects relating to ceramic laminates or to the joining of ceramic articles with other articles by heating
    • C04B2237/62—Forming laminates or joined articles comprising holes, channels or other types of openings
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2237/00—Aspects relating to ceramic laminates or to joining of ceramic articles with other articles by heating
    • C04B2237/50—Processing aspects relating to ceramic laminates or to the joining of ceramic articles with other articles by heating
    • C04B2237/68—Forming laminates or joining articles wherein at least one substrate contains at least two different parts of macro-size, e.g. one ceramic substrate layer containing an embedded conductor or electrode
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2237/00—Aspects relating to ceramic laminates or to joining of ceramic articles with other articles by heating
    • C04B2237/50—Processing aspects relating to ceramic laminates or to the joining of ceramic articles with other articles by heating
    • C04B2237/70—Forming laminates or joined articles comprising layers of a specific, unusual thickness
    • C04B2237/704—Forming laminates or joined articles comprising layers of a specific, unusual thickness of one or more of the ceramic layers or articles
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/095—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00 with a principal constituent of the material being a combination of two or more materials provided in the groups H01L2924/013 - H01L2924/0715
    • H01L2924/097—Glass-ceramics, e.g. devitrified glass
    • H01L2924/09701—Low temperature co-fired ceramic [LTCC]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
    • H01L2924/191—Disposition
    • H01L2924/19101—Disposition of discrete passive components
    • H01L2924/19105—Disposition of discrete passive components in a side-by-side arrangement on a common die mounting substrate
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00—Printed circuits
    • H05K1/02—Details
    • H05K1/03—Use of materials for the substrate
    • H05K1/0306—Inorganic insulating substrates, e.g. ceramic, glass
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00—Printed circuits
    • H05K1/02—Details
    • H05K1/09—Use of materials for the conductive, e.g. metallic pattern
    • H05K1/092—Dispersed materials, e.g. conductive pastes or inks
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
    • H05K2203/12—Using specific substances
    • H05K2203/128—Molten metals, e.g. casting thereof, or melting by heating and excluding molten solder
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/40—Forming printed elements for providing electric connections to or between printed circuits
    • H05K3/403—Edge contacts; Windows or holes in the substrate having plural connections on the walls thereof
DE69221470T 1991-10-25 1992-05-14 Verfahren zur herstellung eines mehrschichtigen keramikteils sowie mehrschichtiges keramikteil Expired - Fee Related DE69221470T2 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP30676091 1991-10-25
JP13419992A JP3223199B2 (ja) 1991-10-25 1992-04-27 多層セラミック部品の製造方法および多層セラミック部品
PCT/JP1992/000619 WO1993008672A1 (en) 1991-10-25 1992-05-14 Manufacture of multilayer ceramic part, and multilayer ceramic part

Publications (2)

Publication Number Publication Date
DE69221470D1 DE69221470D1 (de) 1997-09-11
DE69221470T2 true DE69221470T2 (de) 1998-03-19

Family

ID=26468367

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69221470T Expired - Fee Related DE69221470T2 (de) 1991-10-25 1992-05-14 Verfahren zur herstellung eines mehrschichtigen keramikteils sowie mehrschichtiges keramikteil

Country Status (8)

Country Link
US (1) US5785879A (de)
EP (1) EP0564652B1 (de)
JP (1) JP3223199B2 (de)
KR (1) KR100272647B1 (de)
DE (1) DE69221470T2 (de)
ES (1) ES2108114T3 (de)
TW (1) TW206184B (de)
WO (1) WO1993008672A1 (de)

Families Citing this family (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2858073B2 (ja) * 1992-12-28 1999-02-17 ティーディーケイ株式会社 多層セラミック部品
US5450045A (en) * 1993-03-31 1995-09-12 Tdk Corporation Multi-layer microwave circulator
JPH11204301A (ja) * 1998-01-20 1999-07-30 Matsushita Electric Ind Co Ltd 抵抗器
JP3571957B2 (ja) * 1999-03-30 2004-09-29 松下電器産業株式会社 導体ペーストおよびセラミック多層基板の製造方法
EP1096674B1 (de) * 1999-10-29 2013-03-27 Kyocera Corporation Schaltungssubstrat
JP3799933B2 (ja) * 2000-02-09 2006-07-19 株式会社村田製作所 導電性ペーストおよびセラミック電子部品
US6551729B2 (en) * 2000-08-24 2003-04-22 Murata Manufacturing Co. Ltd Conductive paste and ceramic electronic element using the same
JP2002362987A (ja) * 2001-06-08 2002-12-18 Hitachi Ltd 電子部品およびその製造方法
CA2359347A1 (en) * 2001-10-18 2003-04-18 Cesur Celik Laminated ceramic capacitor internal electrode material
JP2003332749A (ja) * 2002-01-11 2003-11-21 Denso Corp 受動素子内蔵基板、その製造方法及び受動素子内蔵基板形成用素板
DE10230712B4 (de) * 2002-07-08 2006-03-23 Siemens Ag Elektronikeinheit mit einem niedrigschmelzenden metallischen Träger
JP4131694B2 (ja) * 2003-10-06 2008-08-13 三洋電機株式会社 積層セラミックス基板及びその製造方法
DE112005001527B4 (de) * 2004-07-06 2019-10-02 Murata Manufacturing Co., Ltd. Elektrisch leitfähige Paste und eine elektrisch leitfähige Paste aufweisendes keramisches Elektronikbauelment
JP4673086B2 (ja) * 2005-02-28 2011-04-20 京セラ株式会社 ビア導体メタライズ用の導体ペーストおよびこれを用いたセラミック配線基板の製造方法
JP2006278071A (ja) * 2005-03-29 2006-10-12 Toyo Aluminium Kk ペースト組成物、電極およびそれを備えた太陽電池素子
US7749592B2 (en) * 2007-02-06 2010-07-06 Tdk Corpoation Multilayer ceramic substrate
JP5178186B2 (ja) 2007-12-28 2013-04-10 キヤノン株式会社 レンズ位置制御装置、およびその制御方法
JP5503132B2 (ja) * 2008-10-29 2014-05-28 三ツ星ベルト株式会社 抵抗体ペースト及び抵抗器
JP2011035316A (ja) * 2009-08-05 2011-02-17 Toshiba Corp 配線基板およびコンピュータ
US20130139866A1 (en) * 2011-12-01 2013-06-06 Marlow Industries, Inc. Ceramic Plate
JP5671105B2 (ja) * 2012-05-18 2015-02-18 株式会社マテリアル・コンセプト 配線形成方法
JP5598739B2 (ja) 2012-05-18 2014-10-01 株式会社マテリアル・コンセプト 導電性ペースト
CN105377479B (zh) * 2013-03-15 2018-07-31 肖特公司 玻璃-金属复合材料和制造方法
US20230005834A1 (en) * 2014-08-18 2023-01-05 Samtec, Inc. Electrically conductive vias and methods for producing same
CN109119400B (zh) * 2018-09-25 2024-04-09 中国电子科技集团公司第四十三研究所 高载流能力多层陶瓷基板及其制作方法

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3770529A (en) * 1970-08-25 1973-11-06 Ibm Method of fabricating multilayer circuits
JPS5353774A (en) * 1976-10-26 1978-05-16 Fujitsu Ltd Method of producing printed board
US4289719A (en) * 1976-12-10 1981-09-15 International Business Machines Corporation Method of making a multi-layer ceramic substrate
US4994215A (en) * 1980-08-04 1991-02-19 Fine Particle Technology Corp. Method of fabricating complex microcircuit boards, substrates and microcircuits and the substrates and microcircuits
JPS57143203A (en) * 1981-02-27 1982-09-04 Taiyo Yuden Kk Conductive paste for forming conductive layer by baking on porcelain
US4753694A (en) * 1986-05-02 1988-06-28 International Business Machines Corporation Process for forming multilayered ceramic substrate having solid metal conductors
JPH0722221B2 (ja) * 1986-09-25 1995-03-08 田中貴金属工業株式会社 セラミツクス回路基板の製造方法
JPS63277549A (ja) * 1987-05-08 1988-11-15 Fujitsu Ltd 超伝導セラミックスペ−スト組成物
US5147484A (en) * 1987-10-19 1992-09-15 International Business Machines Corporation Method for producing multi-layer ceramic substrates with oxidation resistant metalization
JPH065656B2 (ja) * 1988-02-19 1994-01-19 株式会社村田製作所 セラミック積層体の製造方法
JP2765885B2 (ja) * 1988-11-14 1998-06-18 新光電気工業株式会社 窒化アルミニウム回路基板及びその製造方法
JPH0797705B2 (ja) * 1989-07-17 1995-10-18 日本電気株式会社 多層セラミツク基板
US5080958A (en) * 1989-08-01 1992-01-14 E. I. Du Pont De Nemours And Company Multilayer interconnects
US5290375A (en) * 1989-08-05 1994-03-01 Nippondenso Co., Ltd. Process for manufacturing ceramic multilayer substrate
US5176772A (en) * 1989-10-05 1993-01-05 Asahi Glass Company Ltd. Process for fabricating a multilayer ceramic circuit board
JPH04314394A (ja) * 1991-04-12 1992-11-05 Fujitsu Ltd ガラスセラミック回路基板とその製造方法

Also Published As

Publication number Publication date
WO1993008672A1 (en) 1993-04-29
US5785879A (en) 1998-07-28
TW206184B (de) 1993-05-21
KR930702250A (ko) 1993-09-08
KR100272647B1 (ko) 2001-01-15
EP0564652A1 (de) 1993-10-13
DE69221470D1 (de) 1997-09-11
JP3223199B2 (ja) 2001-10-29
EP0564652A4 (en) 1994-09-14
ES2108114T3 (es) 1997-12-16
JPH05183314A (ja) 1993-07-23
EP0564652B1 (de) 1997-08-06

Similar Documents

Publication Publication Date Title
DE69221470T2 (de) Verfahren zur herstellung eines mehrschichtigen keramikteils sowie mehrschichtiges keramikteil
DE59506666D1 (de) Vorrichtung zur Bildung eines Zahnersatzes und Verfahren zur Herstellung einer solchen Vorrichtung
DE69113628T2 (de) Verfahren zur herstellung eines flächenreissverschlusses und so hergestellter flächenreissverschluss.
DE69435114D1 (de) Verfahren zur Herstellung eines Halbleiterbauelements
DE59308833D1 (de) Verfahren zur herstellung eines haftfesten verbundes zwischen kupferschichten und keramik
ATA208191A (de) Kolbenkopf und verfahren zur herstellung eines kolbenkopfes
ATA18391A (de) Verfahren zur herstellung eines schuhs und danach hergestellter schuh
DE69232102D1 (de) Verfahren zur Herstellung eines Mehrschichtenverbundfilms
DE69330857T2 (de) Metall-Polypropylen-Metall Laminat und Verfahren zur Herstellung eines daraus geformten Gegenstandes
DE69324883D1 (de) Vorrichtung und Verfahren zur Herstellung eines mehrschichtigen Formteils
DE59204152D1 (de) Verfahren zur herstellung einer gedruckten schaltung sowie gedruckte schaltung.
DE59406668D1 (de) Verfahren und Vorrichtung zur Herstellung eines Folienverbundes
DE19681430T1 (de) Halbleiterbauelement und Verfahren zur Herstellung eines Halbleiterbauelements
DE69130111D1 (de) Verfahren zur herstellung eines verbundwerkstoffes sowie verbundwerkstoff
DE69307948T2 (de) Verfahren zur Herstellung eines kupferkaschierten Laminats
DE69220960T2 (de) Verfahren zur herstellung eines verbundwerkstoff
DE69422554T2 (de) Verfahren und Vorrichtung zur Herstellung eines keramischen Sinterkörpers
DE59302663D1 (de) Verfahren und Vorrichtung zur Herstellung eines Metall-Kunststoff-Verbundes
DE69729127D1 (de) Induktives bauelement und verfahren zur herstellung eines solchen bauelements
DE59403672D1 (de) Keramisches heizelement sowie verfahren zur herstellung eines solchen heizelements
DE69225798D1 (de) Verfahren und vorrichtung zur herstellung eines verbundstoffes
DE59707270D1 (de) Mehrschichtiges Vlies sowie Verfahren zur Herstellung eines mehrschichtigen Vlieses
DE69030179T2 (de) Verfahren zur herstellung eines laminats
DE69213956D1 (de) Verfahren zur herstellung eines verbundwerkstoff
ATA99392A (de) Verfahren zur herstellung eines regenerats und dessen verwendung

Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee