DE69216868D1 - Magnetoresistiver Sensor - Google Patents

Magnetoresistiver Sensor

Info

Publication number
DE69216868D1
DE69216868D1 DE69216868T DE69216868T DE69216868D1 DE 69216868 D1 DE69216868 D1 DE 69216868D1 DE 69216868 T DE69216868 T DE 69216868T DE 69216868 T DE69216868 T DE 69216868T DE 69216868 D1 DE69216868 D1 DE 69216868D1
Authority
DE
Germany
Prior art keywords
magnetoresistive sensor
magnetoresistive
sensor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69216868T
Other languages
English (en)
Inventor
Bernard Dieny
Bruce Alvin Curney
Serhat Metin
Stuart Stephen Papworth Parkin
Virgil Simon Speriosu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Application granted granted Critical
Publication of DE69216868D1 publication Critical patent/DE69216868D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R33/00—Arrangements or instruments for measuring magnetic variables
    • G01R33/02—Measuring direction or magnitude of magnetic fields or magnetic flux
    • G01R33/06—Measuring direction or magnitude of magnetic fields or magnetic flux using galvano-magnetic devices
    • G01R33/09—Magnetoresistive devices
    • G01R33/093—Magnetoresistive devices using multilayer structures, e.g. giant magnetoresistance sensors
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y25/00—Nanomagnetism, e.g. magnetoimpedance, anisotropic magnetoresistance, giant magnetoresistance or tunneling magnetoresistance
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
    • G11B5/127—Structure or manufacture of heads, e.g. inductive
    • G11B5/33—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only
    • G11B5/39—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects
    • G11B5/3903—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects using magnetic thin film layers or their effects, the films being part of integrated structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F10/00—Thin magnetic films, e.g. of one-domain structure
    • H01F10/32—Spin-exchange-coupled multilayers, e.g. nanostructured superlattices
    • H01F10/324—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer
    • H01F10/3268—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer the exchange coupling being asymmetric, e.g. by use of additional pinning, by using antiferromagnetic or ferromagnetic coupling interface, i.e. so-called spin-valve [SV] structure, e.g. NiFe/Cu/NiFe/FeMn
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F10/00—Thin magnetic films, e.g. of one-domain structure
    • H01F10/32—Spin-exchange-coupled multilayers, e.g. nanostructured superlattices
    • H01F10/324—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer
    • H01F10/3268—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer the exchange coupling being asymmetric, e.g. by use of additional pinning, by using antiferromagnetic or ferromagnetic coupling interface, i.e. so-called spin-valve [SV] structure, e.g. NiFe/Cu/NiFe/FeMn
    • H01F10/3281—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer the exchange coupling being asymmetric, e.g. by use of additional pinning, by using antiferromagnetic or ferromagnetic coupling interface, i.e. so-called spin-valve [SV] structure, e.g. NiFe/Cu/NiFe/FeMn only by use of asymmetry of the magnetic film pair itself, i.e. so-called pseudospin valve [PSV] structure, e.g. NiFe/Cu/Co
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/80—Constructional details
    • H10N50/85—Magnetic active materials
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
    • G11B5/127—Structure or manufacture of heads, e.g. inductive
    • G11B5/33—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only
    • G11B5/39—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects
    • G11B2005/3996—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects large or giant magnetoresistive effects [GMR], e.g. as generated in spin-valve [SV] devices

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Measuring Magnetic Variables (AREA)
  • Hall/Mr Elements (AREA)
  • Magnetic Heads (AREA)
  • Thin Magnetic Films (AREA)
DE69216868T 1991-02-08 1992-02-07 Magnetoresistiver Sensor Expired - Lifetime DE69216868D1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US07/652,852 US5159513A (en) 1991-02-08 1991-02-08 Magnetoresistive sensor based on the spin valve effect

Publications (1)

Publication Number Publication Date
DE69216868D1 true DE69216868D1 (de) 1997-03-06

Family

ID=24618441

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69216868T Expired - Lifetime DE69216868D1 (de) 1991-02-08 1992-02-07 Magnetoresistiver Sensor

Country Status (5)

Country Link
US (1) US5159513A (de)
EP (1) EP0498668B1 (de)
JP (1) JP2582499B2 (de)
DE (1) DE69216868D1 (de)
SG (1) SG42342A1 (de)

Families Citing this family (192)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5390061A (en) 1990-06-08 1995-02-14 Hitachi, Ltd. Multilayer magnetoresistance effect-type magnetic head
JP3483895B2 (ja) * 1990-11-01 2004-01-06 株式会社東芝 磁気抵抗効果膜
JPH04285713A (ja) * 1991-03-14 1992-10-09 Hitachi Ltd 磁気抵抗効果型磁気ヘッドおよびその製造方法
DE69219936T3 (de) * 1991-03-29 2008-03-06 Kabushiki Kaisha Toshiba Magnetowiderstandseffekt-Element
JPH0536032A (ja) * 1991-08-01 1993-02-12 Hitachi Ltd 磁気抵抗効果型ヘツド及びその製造方法
US5341261A (en) * 1991-08-26 1994-08-23 International Business Machines Corporation Magnetoresistive sensor having multilayer thin film structure
JP3086731B2 (ja) * 1991-09-30 2000-09-11 株式会社東芝 磁気抵抗効果型磁気ヘッド
US5378885A (en) * 1991-10-29 1995-01-03 Mars Incorporated Unshielded magnetoresistive head with multiple pairs of sensing elements
US5633092A (en) * 1991-12-10 1997-05-27 British Technology Group Ltd. Magnetostrictive material
JP3022023B2 (ja) * 1992-04-13 2000-03-15 株式会社日立製作所 磁気記録再生装置
JPH06220609A (ja) * 1992-07-31 1994-08-09 Sony Corp 磁気抵抗効果膜及びその製造方法並びにそれを用いた磁気抵抗効果素子、磁気抵抗効果型磁気ヘッド
JP2725977B2 (ja) * 1992-08-28 1998-03-11 インターナショナル・ビジネス・マシーンズ・コーポレイション 磁気抵抗センサ及びその製造方法、磁気記憶システム
DE4324661C2 (de) * 1992-09-29 2000-03-16 Siemens Ag Verfahren zur Herstellung eines Materials mit erhöhtem Magnetowiderstand und Verwendung des so hergestellten Materials
JP3488545B2 (ja) 1992-10-30 2004-01-19 株式会社東芝 磁気抵抗効果素子、磁気抵抗効果ヘッドおよび磁気再生装置
US5780176A (en) * 1992-10-30 1998-07-14 Kabushiki Kaisha Toshiba Magnetoresistance effect element
US5549978A (en) * 1992-10-30 1996-08-27 Kabushiki Kaisha Toshiba Magnetoresistance effect element
US5931032A (en) 1998-04-16 1999-08-03 Gregory; Edwin H. Cutter and blow resistant lock
JP2637360B2 (ja) * 1992-10-30 1997-08-06 株式会社東芝 磁気抵抗効果素子
US5287238A (en) * 1992-11-06 1994-02-15 International Business Machines Corporation Dual spin valve magnetoresistive sensor
US5373238A (en) * 1992-11-06 1994-12-13 International Business Machines Corporation Four layer magnetoresistance device and method for making a four layer magnetoresistance device
EP0678213B1 (de) * 1992-11-16 2003-02-19 NVE Corporation Magnetoresistive struktur mit einer legierungsschicht
US5617071A (en) * 1992-11-16 1997-04-01 Nonvolatile Electronics, Incorporated Magnetoresistive structure comprising ferromagnetic thin films and intermediate alloy layer having magnetic concentrator and shielding permeable masses
US5569544A (en) * 1992-11-16 1996-10-29 Nonvolatile Electronics, Incorporated Magnetoresistive structure comprising ferromagnetic thin films and intermediate layers of less than 30 angstroms formed of alloys having immiscible components
US5301079A (en) * 1992-11-17 1994-04-05 International Business Machines Corporation Current biased magnetoresistive spin valve sensor
US5358088A (en) * 1992-11-25 1994-10-25 Mars Incorporated Horizontal magnetoresistive head apparatus and method for detecting magnetic data
DE4243358A1 (de) * 1992-12-21 1994-06-23 Siemens Ag Magnetowiderstands-Sensor mit künstlichem Antiferromagneten und Verfahren zu seiner Herstellung
DE4243357A1 (de) * 1992-12-21 1994-06-23 Siemens Ag Magnetowiderstands-Sensor mit verkürzten Meßschichten
DE4301704A1 (de) * 1993-01-22 1994-07-28 Siemens Ag Vorrichtung zum Erfassen einer Winkelposition eines Objektes
US5422571A (en) * 1993-02-08 1995-06-06 International Business Machines Corporation Magnetoresistive spin valve sensor having a nonmagnetic back layer
US5343422A (en) * 1993-02-23 1994-08-30 International Business Machines Corporation Nonvolatile magnetoresistive storage device using spin valve effect
US5657190A (en) * 1993-03-02 1997-08-12 Tdk Corporation Apparatus for detecting a magnetic field using a giant magnetoresistance effect multilayer
US5585196A (en) * 1993-03-12 1996-12-17 Kabushiki Kaisha Toshiba Magnetoresistance effect element
FR2702919B1 (fr) * 1993-03-19 1995-05-12 Thomson Csf Transducteur magnétorésistif et procédé de réalisation.
US5736921A (en) * 1994-03-23 1998-04-07 Sanyo Electric Co., Ltd. Magnetoresistive element
US5585198A (en) * 1993-10-20 1996-12-17 Sanyo Electric Co., Ltd. Magnetorsistance effect element
US5656381A (en) * 1993-03-24 1997-08-12 Sanyo Electric Co., Ltd. Magnetoresistance-effect element
JP2551321B2 (ja) * 1993-04-21 1996-11-06 日本電気株式会社 集積化磁気抵抗効果センサ
TW265440B (de) * 1993-04-30 1995-12-11 Ibm
US5440233A (en) * 1993-04-30 1995-08-08 International Business Machines Corporation Atomic layered materials and temperature control for giant magnetoresistive sensor
JP2784457B2 (ja) * 1993-06-11 1998-08-06 インターナショナル・ビジネス・マシーンズ・コーポレイション 磁気抵抗センサ装置
EP0629998A2 (de) * 1993-06-18 1994-12-21 International Business Machines Corporation Magnetoresistiver Film, Verfahren zu seiner Herstellung und magnetoresistiver Sensor
US5949707A (en) * 1996-09-06 1999-09-07 Nonvolatile Electronics, Incorporated Giant magnetoresistive effect memory cell
WO1995003604A1 (en) * 1993-07-23 1995-02-02 Nonvolatile Electronics, Incorporated Magnetic structure with stratified layers
JPH0766033A (ja) * 1993-08-30 1995-03-10 Mitsubishi Electric Corp 磁気抵抗素子ならびにその磁気抵抗素子を用いた磁性薄膜メモリおよび磁気抵抗センサ
US5585199A (en) * 1993-09-09 1996-12-17 Kabushiki Kaisha Toshiba Magnetoresistance effect head
JP2860233B2 (ja) * 1993-09-09 1999-02-24 株式会社日立製作所 巨大磁気抵抗効果型磁気ヘッドおよびそれを用いた磁気記録再生装置
EP0672303B1 (de) * 1993-10-06 1997-12-03 Koninklijke Philips Electronics N.V. Magnetoresistive anordnung und diese verwendender magnetkopf
US5408377A (en) * 1993-10-15 1995-04-18 International Business Machines Corporation Magnetoresistive sensor with improved ferromagnetic sensing layer and magnetic recording system using the sensor
US5465185A (en) * 1993-10-15 1995-11-07 International Business Machines Corporation Magnetoresistive spin valve sensor with improved pinned ferromagnetic layer and magnetic recording system using the sensor
US5422621A (en) * 1993-10-29 1995-06-06 International Business Machines Corporation Oriented granular giant magnetoresistance sensor
US5699213A (en) * 1993-11-16 1997-12-16 Sanyo Electric Co., Ltd. Magnetoresistive head having a magnetic domain control layer
TW342136U (en) * 1993-12-14 1998-10-01 Ibm Thin film magnetic transducer having a stable soft film for reducing asymmetry variations
US5461308A (en) * 1993-12-30 1995-10-24 At&T Ipm Corp. Magnetoresistive current sensor having high sensitivity
EP0676746B1 (de) * 1994-03-09 1999-08-04 Eastman Kodak Company Magnetoresistiver Wiedergabekopf mit doppeltem Spin-Ventilelement
CN1195294C (zh) * 1994-03-10 2005-03-30 国际商业机器公司 边缘偏置的磁阻传感器、其制作方法及包括它的磁存储***
JP2785678B2 (ja) * 1994-03-24 1998-08-13 日本電気株式会社 スピンバルブ膜およびこれを用いた再生ヘッド
KR960702659A (ko) * 1994-03-25 1996-04-27 에프. 제이. 스미트 자기-저항 장치, 및 상기 장치로 구성된 자기헤드(Magneto-resistive device, and magnetic head comprising such a device)
US5841611A (en) * 1994-05-02 1998-11-24 Matsushita Electric Industrial Co., Ltd. Magnetoresistance effect device and magnetoresistance effect type head, memory device, and amplifying device using the same
US6256222B1 (en) 1994-05-02 2001-07-03 Matsushita Electric Industrial Co., Ltd. Magnetoresistance effect device, and magnetoresistaance effect type head, memory device, and amplifying device using the same
US5546253A (en) * 1994-05-06 1996-08-13 Quantum Corporation Digitial output magnetoresistive (DOMR) head and methods associated therewith
US5442508A (en) * 1994-05-25 1995-08-15 Eastman Kodak Company Giant magnetoresistive reproduce head having dual magnetoresistive sensor
EP0685746A3 (de) * 1994-05-30 1996-12-04 Sony Corp Maqnetowiderstandeffektanordnung mit verbessertem thermischem Widerstand.
US5583725A (en) * 1994-06-15 1996-12-10 International Business Machines Corporation Spin valve magnetoresistive sensor with self-pinned laminated layer and magnetic recording system using the sensor
EP0766831A1 (de) * 1994-06-18 1997-04-09 The University Of Sheffield Magnetfeldempfindliche anordnung
US5528440A (en) * 1994-07-26 1996-06-18 International Business Machines Corporation Spin valve magnetoresistive element with longitudinal exchange biasing of end regions abutting the free layer, and magnetic recording system using the element
JPH0845029A (ja) * 1994-08-01 1996-02-16 Alps Electric Co Ltd 薄膜磁気ヘッド
US5580602A (en) * 1994-09-01 1996-12-03 International Business Machines Corporation Process for making a thin film magnetic head
JPH0877519A (ja) * 1994-09-08 1996-03-22 Fujitsu Ltd 磁気抵抗効果型トランスジューサ
US5898546A (en) * 1994-09-08 1999-04-27 Fujitsu Limited Magnetoresistive head and magnetic recording apparatus
JP3952515B2 (ja) * 1994-09-09 2007-08-01 富士通株式会社 磁気抵抗効果素子、磁気記録装置及び磁気抵抗効果素子の製造方法
JP3574186B2 (ja) * 1994-09-09 2004-10-06 富士通株式会社 磁気抵抗効果素子
JPH08130337A (ja) * 1994-09-09 1996-05-21 Sanyo Electric Co Ltd 磁気抵抗素子及びその製造方法
US5991125A (en) * 1994-09-16 1999-11-23 Kabushiki Kaisha Toshiba Magnetic head
JPH08129718A (ja) * 1994-10-28 1996-05-21 Sony Corp 磁気抵抗効果型磁気センサ
US5561368A (en) * 1994-11-04 1996-10-01 International Business Machines Corporation Bridge circuit magnetic field sensor having spin valve magnetoresistive elements formed on common substrate
US5493467A (en) * 1994-12-27 1996-02-20 International Business Machines Corporation Yoke spin valve MR read head
US5891586A (en) * 1995-01-27 1999-04-06 Alps Electric Co., Ltd. Multilayer thin-film for magnetoresistive device
US5608593A (en) * 1995-03-09 1997-03-04 Quantum Peripherals Colorado, Inc. Shaped spin valve type magnetoresistive transducer and method for fabricating the same incorporating domain stabilization technique
JPH08274386A (ja) * 1995-03-31 1996-10-18 Mitsubishi Electric Corp 磁電変換素子
US6510031B1 (en) * 1995-03-31 2003-01-21 International Business Machines Corporation Magnetoresistive sensor with magnetostatic coupling to obtain opposite alignment of magnetic regions
JPH08279117A (ja) * 1995-04-03 1996-10-22 Alps Electric Co Ltd 巨大磁気抵抗効果材料膜およびその製造方法とそれを用いた磁気ヘッド
JP3276264B2 (ja) * 1995-05-26 2002-04-22 アルプス電気株式会社 磁気抵抗効果多層膜およびその製造方法
SG46731A1 (en) * 1995-06-30 1998-02-20 Ibm Spin valve magnetoresistive sensor with antiparallel pinned layer and improved exchange bias layer and magnetic recording system using the senor
JP3990751B2 (ja) * 1995-07-25 2007-10-17 株式会社日立グローバルストレージテクノロジーズ 磁気抵抗効果型磁気ヘッド及び磁気記録再生装置
US5896252A (en) * 1995-08-11 1999-04-20 Fujitsu Limited Multilayer spin valve magneto-resistive effect magnetic head with free magnetic layer including two sublayers and magnetic disk drive including same
US5648885A (en) * 1995-08-31 1997-07-15 Hitachi, Ltd. Giant magnetoresistive effect sensor, particularly having a multilayered magnetic thin film layer
US5768067A (en) * 1995-09-19 1998-06-16 Alps Electric Co., Ltd. Magnetoresistive head using exchange anisotropic magnetic field with an antiferromagnetic layer
US5843589A (en) * 1995-12-21 1998-12-01 Hitachi, Ltd. Magnetic layered material, and magnetic sensor and magnetic storage/read system based thereon
US6087027A (en) * 1995-12-21 2000-07-11 Hitachi, Ltd. Magnetic layered material, and magnetic sensor and magnetic storage/read system based thereon
US5650887A (en) * 1996-02-26 1997-07-22 International Business Machines Corporation System for resetting sensor magnetization in a spin valve magnetoresistive sensor
US5708358A (en) * 1996-03-21 1998-01-13 Read-Rite Corporation Spin valve magnetoresistive transducers having permanent magnets
DE19612422C2 (de) * 1996-03-28 2000-06-15 Siemens Ag Potentiometereinrichtung mit einem linear verschiebbaren Stellelement und signalerzeugenden Mitteln
JP3461999B2 (ja) * 1996-03-28 2003-10-27 株式会社東芝 磁気抵抗効果素子
JP3327375B2 (ja) * 1996-04-26 2002-09-24 富士通株式会社 磁気抵抗効果型トランスデューサ、その製造方法及び磁気記録装置
US5668688A (en) * 1996-05-24 1997-09-16 Quantum Peripherals Colorado, Inc. Current perpendicular-to-the-plane spin valve type magnetoresistive transducer
US5747997A (en) * 1996-06-05 1998-05-05 Regents Of The University Of Minnesota Spin-valve magnetoresistance sensor having minimal hysteresis problems
US6166539A (en) * 1996-10-30 2000-12-26 Regents Of The University Of Minnesota Magnetoresistance sensor having minimal hysteresis problems
US5939134A (en) * 1996-07-10 1999-08-17 International Business Machines Corporation Process for making a thin film magnetic head
US5966322A (en) * 1996-09-06 1999-10-12 Nonvolatile Electronics, Incorporated Giant magnetoresistive effect memory cell
US5869963A (en) * 1996-09-12 1999-02-09 Alps Electric Co., Ltd. Magnetoresistive sensor and head
JP3249052B2 (ja) * 1996-09-19 2002-01-21 アルプス電気株式会社 磁気抵抗効果素子およびその製造方法とその素子を備えた磁気ヘッド
JP3291208B2 (ja) * 1996-10-07 2002-06-10 アルプス電気株式会社 磁気抵抗効果型センサおよびその製造方法とそのセンサを備えた磁気ヘッド
US5796561A (en) * 1996-11-27 1998-08-18 International Business Machines Corporation Self-biased spin valve sensor
JP3886589B2 (ja) 1997-03-07 2007-02-28 アルプス電気株式会社 巨大磁気抵抗効果素子センサ
US5825595A (en) * 1997-05-13 1998-10-20 International Business Machines Corporation Spin valve sensor with two spun values separated by an insulated current conductor
US6118622A (en) * 1997-05-13 2000-09-12 International Business Machines Corporation Technique for robust resetting of spin valve head
US5748399A (en) * 1997-05-13 1998-05-05 International Business Machines Corporation Resettable symmetric spin valve
JP2985964B2 (ja) * 1997-06-30 1999-12-06 日本電気株式会社 磁気抵抗効果型ヘッド及びその初期化方法
US5867351A (en) * 1997-07-25 1999-02-02 International Business Machines Corporation Spin valve read head with low moment, high coercivity pinning layer
JP3274392B2 (ja) * 1997-09-17 2002-04-15 アルプス電気株式会社 スピンバルブ型薄膜素子
JPH1196519A (ja) * 1997-09-17 1999-04-09 Alps Electric Co Ltd スピンバルブ型薄膜素子およびその製造方法
US6350487B1 (en) 1997-09-24 2002-02-26 Alps Electric Co., Ltd. Spin-valve type thin film element and its manufacturing method
JP3263016B2 (ja) 1997-10-20 2002-03-04 アルプス電気株式会社 スピンバルブ型薄膜素子
JP2962415B2 (ja) 1997-10-22 1999-10-12 アルプス電気株式会社 交換結合膜
JP3175922B2 (ja) * 1997-10-24 2001-06-11 アルプス電気株式会社 スピンバルブ型薄膜素子の製造方法
US5969523A (en) * 1997-11-14 1999-10-19 International Business Machines Corporation Preamplifier bias mode to re-initialize a GMR head after losing initialization
JP3269999B2 (ja) * 1997-12-09 2002-04-02 アルプス電気株式会社 薄膜磁気ヘッドの製造方法
US6072382A (en) * 1998-01-06 2000-06-06 Nonvolatile Electronics, Incorporated Spin dependent tunneling sensor
US6127053A (en) * 1998-05-27 2000-10-03 International Business Machines Corporation Spin valves with high uniaxial anisotropy reference and keeper layers
US6175475B1 (en) 1998-05-27 2001-01-16 International Business Machines Corporation Fully-pinned, flux-closed spin valve
US6117569A (en) * 1998-05-27 2000-09-12 International Business Machines Corporation Spin valves with antiferromagnetic exchange pinning and high uniaxial anisotropy reference and keeper layers
US6081445A (en) * 1998-07-27 2000-06-27 Motorola, Inc. Method to write/read MRAM arrays
JP2000057527A (ja) 1998-08-04 2000-02-25 Alps Electric Co Ltd スピンバルブ型薄膜素子
US6097579A (en) * 1998-08-21 2000-08-01 International Business Machines Corporation Tunnel junction head structure without current shunting
US6052263A (en) * 1998-08-21 2000-04-18 International Business Machines Corporation Low moment/high coercivity pinned layer for magnetic tunnel junction sensors
DE19852368A1 (de) 1998-11-13 2000-05-25 Forschungszentrum Juelich Gmbh Markierungseinrichtung
JP3212567B2 (ja) 1999-01-27 2001-09-25 アルプス電気株式会社 磁気抵抗効果型薄膜磁気素子を備えた薄膜磁気ヘッドおよびその製造方法
JP3987226B2 (ja) 1999-02-05 2007-10-03 富士通株式会社 磁気抵抗効果型デバイス
US6331773B1 (en) 1999-04-16 2001-12-18 Storage Technology Corporation Pinned synthetic anti-ferromagnet with oxidation protection layer
US6913836B1 (en) 1999-06-03 2005-07-05 Alps Electric Co., Ltd. Spin-valve type magnetoresistive sensor and method of manufacturing the same
JP3710324B2 (ja) 1999-06-03 2005-10-26 アルプス電気株式会社 スピンバルブ型薄膜磁気素子及び薄膜磁気ヘッド及びスピンバルブ型薄膜磁気素子の製造方法
JP2001006127A (ja) 1999-06-18 2001-01-12 Tdk Corp トンネル磁気抵抗効果型ヘッド
US6383574B1 (en) 1999-07-23 2002-05-07 Headway Technologies, Inc. Ion implantation method for fabricating magnetoresistive (MR) sensor element
JP3400750B2 (ja) 1999-07-23 2003-04-28 ティーディーケイ株式会社 トンネル磁気抵抗効果型ヘッドの製造方法
US6449134B1 (en) 1999-08-05 2002-09-10 International Business Machines Corporation Read head with file resettable dual spin valve sensor
US6455177B1 (en) * 1999-10-05 2002-09-24 Seagate Technology Llc Stabilization of GMR devices
US6538843B1 (en) * 1999-11-09 2003-03-25 Matsushita Electric Industrial Co., Ltd. Magnetic head
US6542341B1 (en) 1999-11-18 2003-04-01 International Business Machines Corporation Magnetic sensors having an antiferromagnetic layer exchange-coupled to a free layer
US6271997B1 (en) 1999-11-22 2001-08-07 International Business Machines Corporation Read head spin valve sensor with triple antiparallel coupled free layer structure
US6560077B2 (en) 2000-01-10 2003-05-06 The University Of Alabama CPP spin-valve device
SG97139A1 (en) * 2000-02-15 2003-07-18 Motorola Inc Method to write/read mram arrays
US6519124B1 (en) 2000-03-27 2003-02-11 Tdk Corporation Magnetic tunnel junction read head using a hybrid, low-magnetization flux guide
JP3474523B2 (ja) 2000-06-30 2003-12-08 Ｔｄｋ株式会社 薄膜磁気ヘッドおよびその製造方法
US6714389B1 (en) 2000-11-01 2004-03-30 Seagate Technology Llc Digital magnetoresistive sensor with bias
US6574079B2 (en) 2000-11-09 2003-06-03 Tdk Corporation Magnetic tunnel junction device and method including a tunneling barrier layer formed by oxidations of metallic alloys
US6710987B2 (en) 2000-11-17 2004-03-23 Tdk Corporation Magnetic tunnel junction read head devices having a tunneling barrier formed by multi-layer, multi-oxidation processes
US6473279B2 (en) 2001-01-04 2002-10-29 International Business Machines Corporation In-stack single-domain stabilization of free layers for CIP and CPP spin-valve or tunnel-valve read heads
JP3498737B2 (ja) * 2001-01-24 2004-02-16 ヤマハ株式会社 磁気センサの製造方法
EP1391942A4 (de) * 2001-05-31 2007-08-15 Nat Inst Of Advanced Ind Scien Tunnel-magnetwiderstandselement
US20030002232A1 (en) * 2001-06-29 2003-01-02 Storage Technology Corporation Apparatus and method of making a reduced sensitivity spin valve sensor apparatus in which a flux carrying capacity is increased
US20030002231A1 (en) * 2001-06-29 2003-01-02 Dee Richard Henry Reduced sensitivity spin valve head for magnetic tape applications
JP2003124541A (ja) 2001-10-12 2003-04-25 Nec Corp 交換結合膜、磁気抵抗効果素子、磁気ヘッド及び磁気ランダムアクセスメモリ
US6545906B1 (en) 2001-10-16 2003-04-08 Motorola, Inc. Method of writing to scalable magnetoresistance random access memory element
US7486457B2 (en) * 2002-02-15 2009-02-03 Hitachi Global Storage Technologies Netherlands B.V. Method and apparatus for predicting write failure resulting from flying height modulation
JP2003324225A (ja) * 2002-04-26 2003-11-14 Nec Corp 積層フェリ型磁性薄膜並びにそれを使用した磁気抵抗効果素子及び強磁性トンネル素子
US7005958B2 (en) 2002-06-14 2006-02-28 Honeywell International Inc. Dual axis magnetic sensor
US7095646B2 (en) 2002-07-17 2006-08-22 Freescale Semiconductor, Inc. Multi-state magnetoresistance random access cell with improved memory storage density
JP3684225B2 (ja) * 2002-09-30 2005-08-17 株式会社東芝 磁気抵抗効果素子および磁気メモリ
US20040071951A1 (en) * 2002-09-30 2004-04-15 Sungho Jin Ultra-high-density information storage media and methods for making the same
US20050079282A1 (en) * 2002-09-30 2005-04-14 Sungho Jin Ultra-high-density magnetic recording media and methods for making the same
US7068582B2 (en) * 2002-09-30 2006-06-27 The Regents Of The University Of California Read head for ultra-high-density information storage media and method for making the same
JP2004296000A (ja) * 2003-03-27 2004-10-21 Hitachi Ltd 磁気抵抗効果型ヘッド、及びその製造方法
US6956763B2 (en) 2003-06-27 2005-10-18 Freescale Semiconductor, Inc. MRAM element and methods for writing the MRAM element
US6967366B2 (en) 2003-08-25 2005-11-22 Freescale Semiconductor, Inc. Magnetoresistive random access memory with reduced switching field variation
ITTO20030729A1 (it) * 2003-09-23 2005-03-24 Fiat Ricerche Dispositivo di rilevazione di campi magnetici e relativo procedimento di rilevazione
US7019371B2 (en) * 2004-01-26 2006-03-28 Seagate Technology Llc Current-in-plane magnetic sensor including a trilayer structure
US7112375B2 (en) 2004-01-26 2006-09-26 Hitachi Global Storage Technologies Netherlands B.V. Seed layer structure for improved crystallographic orientation of a hard magnetic material
JP4433820B2 (ja) * 2004-02-20 2010-03-17 Ｔｄｋ株式会社 磁気検出素子およびその形成方法ならびに磁気センサ、電流計
FR2866750B1 (fr) * 2004-02-23 2006-04-21 Centre Nat Rech Scient Memoire magnetique a jonction tunnel magnetique et procede pour son ecriture
ATE446581T1 (de) * 2004-03-12 2009-11-15 Trinity College Dublin Magnetoresistives medium
JP4202958B2 (ja) * 2004-03-30 2008-12-24 株式会社東芝 磁気抵抗効果素子
JP4692805B2 (ja) * 2004-06-30 2011-06-01 Ｔｄｋ株式会社 磁気検出素子およびその形成方法
US7129098B2 (en) 2004-11-24 2006-10-31 Freescale Semiconductor, Inc. Reduced power magnetoresistive random access memory elements
US8178165B2 (en) * 2005-01-21 2012-05-15 The Regents Of The University Of California Method for fabricating a long-range ordered periodic array of nano-features, and articles comprising same
CN100442076C (zh) * 2005-05-27 2008-12-10 中国科学院物理研究所 线性磁场传感器及其制作方法
US20070045102A1 (en) * 2005-08-23 2007-03-01 Veeco Instruments Inc. Method of sputter depositing an alloy on a substrate
CN100549716C (zh) * 2005-10-28 2009-10-14 中国科学院物理研究所 一种层状集成的三维磁场传感器及其制备方法和用途
US20070279969A1 (en) * 2006-06-02 2007-12-06 Raytheon Company Intrusion detection apparatus and method
JP5015966B2 (ja) * 2007-02-02 2012-09-05 アルプス電気株式会社 磁気検出装置及びその製造方法
FR2924851B1 (fr) * 2007-12-05 2009-11-20 Commissariat Energie Atomique Element magnetique a ecriture assistee thermiquement.
WO2009074411A1 (en) 2007-12-13 2009-06-18 Crocus Technology Magnetic memory with a thermally assisted writing procedure
FR2925747B1 (fr) 2007-12-21 2010-04-09 Commissariat Energie Atomique Memoire magnetique a ecriture assistee thermiquement
FR2929041B1 (fr) * 2008-03-18 2012-11-30 Crocus Technology Element magnetique a ecriture assistee thermiquement
US8519703B2 (en) * 2008-03-20 2013-08-27 Infineon Technologies Ag Magnetic sensor device and method of determining resistance values
EP2124228B1 (de) * 2008-05-20 2014-03-05 Crocus Technology Magnetischer Direktzugriffsspeicher mit einem elliptischen Tunnelübergang
US8031519B2 (en) * 2008-06-18 2011-10-04 Crocus Technology S.A. Shared line magnetic random access memory cells
ATE545133T1 (de) * 2009-05-08 2012-02-15 Crocus Technology Magnetischer speicher mit wärmeunterstütztem schreibverfahren und eingeschränktem schreibfeld
EP2249350B1 (de) * 2009-05-08 2012-02-01 Crocus Technology Magnetischer Speicher mit wärmeunterstütztem Schreibverfahren und niedrigem Schreibstrom
US8815610B2 (en) 2010-10-15 2014-08-26 International Business Machines Corporation Magnetic nanoparticle detection across a membrane
TWI449067B (zh) * 2011-06-01 2014-08-11 Voltafield Technology Corp 自旋閥磁阻感測器
CN107807142A (zh) * 2017-10-26 2018-03-16 北京航空航天大学 一种固体所含杂质浓度的测量***及测量方法
CN107576718A (zh) * 2017-10-26 2018-01-12 北京航空航天大学 一种固体内杂质浓度的测量***及测量方法

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2219482B1 (de) * 1973-02-27 1978-03-03 Cii
US4103315A (en) * 1977-06-24 1978-07-25 International Business Machines Corporation Antiferromagnetic-ferromagnetic exchange bias films
US4356523A (en) * 1980-06-09 1982-10-26 Ampex Corporation Narrow track magnetoresistive transducer assembly
JPH07105006B2 (ja) * 1985-11-05 1995-11-13 ソニー株式会社 磁気抵抗効果型磁気ヘツド
DE3820475C1 (de) * 1988-06-16 1989-12-21 Kernforschungsanlage Juelich Gmbh, 5170 Juelich, De
US5206590A (en) * 1990-12-11 1993-04-27 International Business Machines Corporation Magnetoresistive sensor based on the spin valve effect

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EP0498668B1 (de) 1997-01-22
SG42342A1 (en) 1997-08-15
EP0498668A3 (en) 1993-10-13
JPH0660336A (ja) 1994-03-04
JP2582499B2 (ja) 1997-02-19
US5159513A (en) 1992-10-27

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