DE69207521D1 - Senkrecht zur Oberfläche emittierender Halbleiterlaser und Verfahren zu seiner Herstellung - Google Patents

Senkrecht zur Oberfläche emittierender Halbleiterlaser und Verfahren zu seiner Herstellung

Info

Publication number
DE69207521D1
DE69207521D1 DE69207521T DE69207521T DE69207521D1 DE 69207521 D1 DE69207521 D1 DE 69207521D1 DE 69207521 T DE69207521 T DE 69207521T DE 69207521 T DE69207521 T DE 69207521T DE 69207521 D1 DE69207521 D1 DE 69207521D1
Authority
DE
Germany
Prior art keywords
production
semiconductor laser
laser emitting
emitting perpendicular
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69207521T
Other languages
English (en)
Other versions
DE69207521T2 (de
Inventor
Katsumi Mori
Tatsuya Asaka
Hideaki Iwano
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Seiko Epson Corp
Original Assignee
Seiko Epson Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Seiko Epson Corp filed Critical Seiko Epson Corp
Publication of DE69207521D1 publication Critical patent/DE69207521D1/de
Application granted granted Critical
Publication of DE69207521T2 publication Critical patent/DE69207521T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18308—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] having a special structure for lateral current or light confinement
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/028—Coatings ; Treatment of the laser facets, e.g. etching, passivation layers or reflecting layers
    • H01S5/0281—Coatings made of semiconductor materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18361—Structure of the reflectors, e.g. hybrid mirrors
    • H01S5/18369—Structure of the reflectors, e.g. hybrid mirrors based on dielectric materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/2054—Methods of obtaining the confinement
    • H01S5/2059—Methods of obtaining the confinement by means of particular conductivity zones, e.g. obtained by particle bombardment or diffusion
    • H01S5/2068—Methods of obtaining the confinement by means of particular conductivity zones, e.g. obtained by particle bombardment or diffusion obtained by radiation treatment or annealing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/2205—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers
    • H01S5/2211—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers based on II-VI materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/2205—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers
    • H01S5/2222—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers having special electric properties
    • H01S5/2224—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers having special electric properties semi-insulating semiconductors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S2304/00—Special growth methods for semiconductor lasers
    • H01S2304/04—MOCVD or MOVPE
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18341—Intra-cavity contacts
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
    • H01S5/4031—Edge-emitting structures
    • H01S5/4068—Edge-emitting structures with lateral coupling by axially offset or by merging waveguides, e.g. Y-couplers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/42—Arrays of surface emitting lasers
    • H01S5/423—Arrays of surface emitting lasers having a vertical cavity

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Geometry (AREA)
  • Semiconductor Lasers (AREA)
DE69207521T 1991-03-28 1992-03-26 Senkrecht zur Oberfläche emittierender Halbleiterlaser und Verfahren zu seiner Herstellung Expired - Lifetime DE69207521T2 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP6487291 1991-03-28
JP5264292 1992-03-11
PCT/JP1992/000367 WO1992017925A1 (en) 1991-03-28 1992-03-26 Surface emitting type semiconductor laser and its manufacturing method

Publications (2)

Publication Number Publication Date
DE69207521D1 true DE69207521D1 (de) 1996-02-22
DE69207521T2 DE69207521T2 (de) 1996-09-05

Family

ID=26393271

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69207521T Expired - Lifetime DE69207521T2 (de) 1991-03-28 1992-03-26 Senkrecht zur Oberfläche emittierender Halbleiterlaser und Verfahren zu seiner Herstellung

Country Status (5)

Country Link
US (1) US5375133A (de)
EP (1) EP0531542B1 (de)
KR (1) KR100274283B1 (de)
DE (1) DE69207521T2 (de)
WO (1) WO1992017925A1 (de)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5537666A (en) * 1990-09-12 1996-07-16 Seiko Epson Coropration Surface emission type semiconductor laser
US5625637A (en) * 1991-03-28 1997-04-29 Seiko Epson Corporation Surface emitting semiconductor laser and its manufacturing process
JP3211383B2 (ja) * 1992-06-08 2001-09-25 大同特殊鋼株式会社 半導体多層膜反射鏡の製造方法
JPH0722646A (ja) * 1993-06-30 1995-01-24 Mitsubishi Chem Corp 電流ブロック層を有するｌｅｄ
SE501635C2 (sv) * 1993-08-20 1995-04-03 Asea Brown Boveri Förfarande och anordning för utsändande av ljus med integrerad excitationskälla
CN1036822C (zh) * 1993-09-28 1997-12-24 吉林大学 钨丝做掩膜二次质子轰击垂直腔面发射激光器
JP3766976B2 (ja) * 1994-01-20 2006-04-19 セイコーエプソン株式会社 面発光型半導体レーザ装置およびその製造方法
JP3818388B1 (ja) * 1994-01-20 2006-09-06 セイコーエプソン株式会社 面発光型半導体レーザ装置およびその製造方法
JPH08279650A (ja) * 1995-04-06 1996-10-22 Mitsubishi Electric Corp 半導体レーザ装置、及び半導体レーザ装置の製造方法
JPH11121864A (ja) 1997-10-08 1999-04-30 Seiko Epson Corp 面発光レーザ及びその製造方法
US6795470B1 (en) * 1999-06-09 2004-09-21 Science Applications International Corporation Semiconductor laser light source with photocurrent feedback control for single mode operation
KR20010059003A (ko) 1999-12-30 2001-07-06 이계안 저선팽창 폴리올레핀계 복합 수지 조성물
JP2003078205A (ja) * 2001-09-05 2003-03-14 Fuji Photo Film Co Ltd 半導体レーザ素子
JP6664688B2 (ja) * 2015-11-19 2020-03-13 学校法人 名城大学 垂直共振器型発光素子
JP6820146B2 (ja) * 2015-12-25 2021-01-27 スタンレー電気株式会社 垂直共振器型発光素子

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5698888A (en) * 1980-01-09 1981-08-08 Tokyo Inst Of Technol Light emitting semiconductor laser
JPS63142879A (ja) * 1986-12-05 1988-06-15 Seiko Epson Corp 半導体レーザ及び半導体レーザの製造方法
JPH01264285A (ja) * 1988-04-15 1989-10-20 Omron Tateisi Electron Co 面発光型半導体レーザ
JPH0318835A (ja) * 1989-06-15 1991-01-28 Matsushita Electric Ind Co Ltd 光電子集積回路
US4949350A (en) * 1989-07-17 1990-08-14 Bell Communications Research, Inc. Surface emitting semiconductor laser
US5182757A (en) * 1990-09-12 1993-01-26 Seiko Epson Corporation Surface emission type semiconductor laser
US5115441A (en) * 1991-01-03 1992-05-19 At&T Bell Laboratories Vertical cavity surface emmitting lasers with transparent electrodes
JP2904227B2 (ja) * 1991-03-08 1999-06-14 日本電信電話株式会社 面発光レーザ

Also Published As

Publication number Publication date
KR930700988A (ko) 1993-03-16
EP0531542A4 (en) 1993-12-01
WO1992017925A1 (en) 1992-10-15
US5375133A (en) 1994-12-20
KR100274283B1 (ko) 2001-01-15
EP0531542A1 (de) 1993-03-17
DE69207521T2 (de) 1996-09-05
EP0531542B1 (de) 1996-01-10

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition