DE69207410T2 - Monolithisch integrierte Brückenschaltung mit Transistoren und entsprechendes Herstellungsverfahren - Google Patents

Monolithisch integrierte Brückenschaltung mit Transistoren und entsprechendes Herstellungsverfahren

Info

Publication number
DE69207410T2
DE69207410T2 DE69207410T DE69207410T DE69207410T2 DE 69207410 T2 DE69207410 T2 DE 69207410T2 DE 69207410 T DE69207410 T DE 69207410T DE 69207410 T DE69207410 T DE 69207410T DE 69207410 T2 DE69207410 T2 DE 69207410T2
Authority
DE
Germany
Prior art keywords
transistors
manufacturing process
bridge circuit
monolithically integrated
corresponding manufacturing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69207410T
Other languages
English (en)
Other versions
DE69207410D1 (de
Inventor
Raffaele Zambrano
Sergio Palara
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
CORIMME Consorzio per Ricerca Sulla Microelettronica nel Mezzogiorno
Original Assignee
CORIMME Consorzio per Ricerca Sulla Microelettronica nel Mezzogiorno
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by CORIMME Consorzio per Ricerca Sulla Microelettronica nel Mezzogiorno filed Critical CORIMME Consorzio per Ricerca Sulla Microelettronica nel Mezzogiorno
Application granted granted Critical
Publication of DE69207410D1 publication Critical patent/DE69207410D1/de
Publication of DE69207410T2 publication Critical patent/DE69207410T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
    • H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
    • H01L27/0611—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region
    • H01L27/0617—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region comprising components of the field-effect type
DE69207410T 1992-09-18 1992-09-18 Monolithisch integrierte Brückenschaltung mit Transistoren und entsprechendes Herstellungsverfahren Expired - Fee Related DE69207410T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
EP92830506A EP0587968B1 (de) 1992-09-18 1992-09-18 Monolithisch integrierte Brückenschaltung mit Transistoren und entsprechendes Herstellungsverfahren

Publications (2)

Publication Number Publication Date
DE69207410D1 DE69207410D1 (de) 1996-02-15
DE69207410T2 true DE69207410T2 (de) 1996-08-29

Family

ID=8212177

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69207410T Expired - Fee Related DE69207410T2 (de) 1992-09-18 1992-09-18 Monolithisch integrierte Brückenschaltung mit Transistoren und entsprechendes Herstellungsverfahren

Country Status (3)

Country Link
US (2) US5464993A (de)
EP (1) EP0587968B1 (de)
DE (1) DE69207410T2 (de)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7632712B2 (en) 2007-07-06 2009-12-15 Infineon Technologies Ag Method of fabricating a power semiconductor module

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0587968B1 (de) * 1992-09-18 1996-01-03 Co.Ri.M.Me. Consorzio Per La Ricerca Sulla Microelettronica Nel Mezzogiorno Monolithisch integrierte Brückenschaltung mit Transistoren und entsprechendes Herstellungsverfahren
DE69326771T2 (de) 1993-12-07 2000-03-02 St Microelectronics Srl Ausgangstufe mit Transistoren von unterschiedlichem Typ
FR2729008B1 (fr) * 1994-12-30 1997-03-21 Sgs Thomson Microelectronics Circuit integre de puissance
JPH09213956A (ja) * 1996-02-07 1997-08-15 Nec Kansai Ltd 半導体装置及びその製造方法
JP2002033397A (ja) * 2000-07-18 2002-01-31 Mitsubishi Electric Corp 半導体装置
US8377756B1 (en) * 2011-07-26 2013-02-19 General Electric Company Silicon-carbide MOSFET cell structure and method for forming same
US8530298B2 (en) * 2011-11-01 2013-09-10 Texas Instruments Incorporated Radiation hardened integrated circuit
CN114152857A (zh) * 2021-12-07 2022-03-08 华东师范大学 一种二维材料场效应晶体管失效样品的制备方法

Family Cites Families (18)

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Publication number Priority date Publication date Assignee Title
JPS57162359A (en) * 1981-03-30 1982-10-06 Toshiba Corp Semiconductor device
IT1213260B (it) * 1984-12-18 1989-12-14 Sgs Thomson Microelectronics Circuito a ponte di transistori mos di potenza a canale n integrato eprocedimento per la sua fabbricazione.
US4896196A (en) * 1986-11-12 1990-01-23 Siliconix Incorporated Vertical DMOS power transistor with an integral operating condition sensor
US5023678A (en) * 1987-05-27 1991-06-11 International Rectifier Corporation High power MOSFET and integrated control circuit therefor for high-side switch application
US4866495A (en) * 1987-05-27 1989-09-12 International Rectifier Corporation High power MOSFET and integrated control circuit therefor for high-side switch application
IT1228900B (it) * 1989-02-27 1991-07-09 Sgs Thomson Microelectronics Struttura integrata monolitica per sistema di pilotaggio a due stadi con componente circuitale traslatore di livello del segnale di pilotaggio per transistori di potenza.
US5055721A (en) * 1989-04-13 1991-10-08 Mitsubishi Denki Kabushiki Kaisha Drive circuit for igbt device
JPH02312280A (ja) * 1989-05-26 1990-12-27 Mitsubishi Electric Corp 絶縁ゲート型バイポーラトランジスタ
JPH0370477A (ja) * 1989-08-08 1991-03-26 Fuji Electric Co Ltd 絶縁ゲート型半導体装置の駆動電源回路
US5273917A (en) * 1989-08-19 1993-12-28 Fuji Electric Co., Ltd. Method for manufacturing a conductivity modulation MOSFET
US5107151A (en) * 1989-08-22 1992-04-21 Unique Mobility, Inc. Switching circuit employing electronic devices in series with an inductor to avoid commutation breakdown and extending the current range of switching circuits by using igbt devices in place of mosfets
JPH06103745B2 (ja) * 1989-10-06 1994-12-14 株式会社東芝 集積回路素子
DE69025045T2 (de) * 1989-12-04 1996-05-30 Toshiba Kawasaki Kk Leistungswandler vom Brückentyp mit verbessertem Wirkungsgrad
US5231563A (en) * 1990-09-07 1993-07-27 Itt Corporation Square wave converter having an improved zero voltage switching operation
US5171699A (en) * 1990-10-03 1992-12-15 Texas Instruments Incorporated Vertical DMOS transistor structure built in an N-well CMOS-based BiCMOS process and method of fabrication
US5315497A (en) * 1991-11-07 1994-05-24 Premier Power, Inc. Symmetrical universal AC-AC power conditioner
EP0587968B1 (de) * 1992-09-18 1996-01-03 Co.Ri.M.Me. Consorzio Per La Ricerca Sulla Microelettronica Nel Mezzogiorno Monolithisch integrierte Brückenschaltung mit Transistoren und entsprechendes Herstellungsverfahren
US5446300A (en) * 1992-11-04 1995-08-29 North American Philips Corporation Semiconductor device configuration with multiple HV-LDMOS transistors and a floating well circuit

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7632712B2 (en) 2007-07-06 2009-12-15 Infineon Technologies Ag Method of fabricating a power semiconductor module

Also Published As

Publication number Publication date
EP0587968A1 (de) 1994-03-23
EP0587968B1 (de) 1996-01-03
US5622876A (en) 1997-04-22
DE69207410D1 (de) 1996-02-15
US5464993A (en) 1995-11-07

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee