IT1228900B - Struttura integrata monolitica per sistema di pilotaggio a due stadi con componente circuitale traslatore di livello del segnale di pilotaggio per transistori di potenza. - Google Patents
Struttura integrata monolitica per sistema di pilotaggio a due stadi con componente circuitale traslatore di livello del segnale di pilotaggio per transistori di potenza.Info
- Publication number
- IT1228900B IT1228900B IT8919570A IT1957089A IT1228900B IT 1228900 B IT1228900 B IT 1228900B IT 8919570 A IT8919570 A IT 8919570A IT 1957089 A IT1957089 A IT 1957089A IT 1228900 B IT1228900 B IT 1228900B
- Authority
- IT
- Italy
- Prior art keywords
- stage
- pilot signal
- circuit component
- power transistors
- monolithic structure
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
- H01L27/0611—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region
- H01L27/0617—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region comprising components of the field-effect type
- H01L27/0623—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region comprising components of the field-effect type in combination with bipolar transistors
Landscapes
- Power Engineering (AREA)
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Ceramic Engineering (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Bipolar Integrated Circuits (AREA)
- Semiconductor Integrated Circuits (AREA)
- Manipulation Of Pulses (AREA)
- Element Separation (AREA)
Priority Applications (6)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
IT8919570A IT1228900B (it) | 1989-02-27 | 1989-02-27 | Struttura integrata monolitica per sistema di pilotaggio a due stadi con componente circuitale traslatore di livello del segnale di pilotaggio per transistori di potenza. |
EP90200306A EP0385524B1 (en) | 1989-02-27 | 1990-02-12 | Monolithic integrated structure for a two-stage driving system with level translator circuit component of the driving signal for power transistors |
DE69022262T DE69022262T2 (de) | 1989-02-27 | 1990-02-12 | Monolithische integrierte Schaltkreisstruktur für Zwei-Etappen-Treibersystem mit Niveau-Translationsschaltkreis für das Treibersignal für Leistungstransistoren. |
US07/480,162 US5072278A (en) | 1989-02-27 | 1990-02-14 | Monolithic integrated structure for a two-stage driving system with level translator circuit component of the driving signal for power transistors |
JP2042736A JPH02253653A (ja) | 1989-02-27 | 1990-02-26 | パワートランジスタに対する駆動信号のレベル変換回路コンポーネントを持つ2段駆動システムのためのモノリシック集積回路 |
KR1019900002471A KR900013643A (ko) | 1989-02-27 | 1990-02-27 | 전력트랜지스터를 위한 구동신호 레벨 트랜스레이터 회로부품을 가진 2단 구동시스템을 위한 모노리식 집적구조 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
IT8919570A IT1228900B (it) | 1989-02-27 | 1989-02-27 | Struttura integrata monolitica per sistema di pilotaggio a due stadi con componente circuitale traslatore di livello del segnale di pilotaggio per transistori di potenza. |
Publications (2)
Publication Number | Publication Date |
---|---|
IT8919570A0 IT8919570A0 (it) | 1989-02-27 |
IT1228900B true IT1228900B (it) | 1991-07-09 |
Family
ID=11159148
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
IT8919570A IT1228900B (it) | 1989-02-27 | 1989-02-27 | Struttura integrata monolitica per sistema di pilotaggio a due stadi con componente circuitale traslatore di livello del segnale di pilotaggio per transistori di potenza. |
Country Status (6)
Country | Link |
---|---|
US (1) | US5072278A (it) |
EP (1) | EP0385524B1 (it) |
JP (1) | JPH02253653A (it) |
KR (1) | KR900013643A (it) |
DE (1) | DE69022262T2 (it) |
IT (1) | IT1228900B (it) |
Families Citing this family (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5157281A (en) * | 1991-07-12 | 1992-10-20 | Texas Instruments Incorporated | Level-shifter circuit for integrated circuits |
DE69126618T2 (de) * | 1991-11-25 | 1998-01-08 | Cons Ric Microelettronica | Integrierte Brückenanordnung mit optimierten Übertragungsleistungsverlusten |
EP0580256B1 (en) * | 1992-07-20 | 1997-10-08 | Koninklijke Philips Electronics N.V. | Semiconductor device for high voltages |
EP0587968B1 (en) * | 1992-09-18 | 1996-01-03 | Co.Ri.M.Me. Consorzio Per La Ricerca Sulla Microelettronica Nel Mezzogiorno | Monolithic integrated bridge transistor circuit and corresponding manufacturing process |
DE69420565T2 (de) * | 1994-10-27 | 2000-03-30 | Co.Ri.M.Me. Consorzio Per La Ricerca Sulla Microelettronica Nel Mezzogiorno, Catania | Treiberschaltung für elektronische Halbleiterbauelemente mit wenigstens einem Leistungstransistor |
US5495123A (en) * | 1994-10-31 | 1996-02-27 | Sgs-Thomson Microelectronics, Inc. | Structure to protect against below ground current injection |
JP2896342B2 (ja) * | 1995-05-04 | 1999-05-31 | インターナショナル・レクチファイヤー・コーポレーション | 半波ブリッジ構成における複数のパワートランジスタを駆動し、かつ出力ノードの過度の負の振動を許容する方法及び回路、並びに上記回路を組み込む集積回路 |
SG66453A1 (en) * | 1997-04-23 | 1999-07-20 | Int Rectifier Corp | Resistor in series with bootstrap diode for monolithic gate device |
US5834826A (en) * | 1997-05-08 | 1998-11-10 | Stmicroelectronics, Inc. | Protection against adverse parasitic effects in junction-isolated integrated circuits |
CN100339946C (zh) * | 2004-12-22 | 2007-09-26 | 中国电子科技集团公司第二十四研究所 | 小比导通电阻的集成化大电流功率器件结构的设计方法 |
US9214457B2 (en) * | 2011-09-20 | 2015-12-15 | Alpha & Omega Semiconductor Incorporated | Method of integrating high voltage devices |
JP6384201B2 (ja) * | 2014-08-28 | 2018-09-05 | セイコーエプソン株式会社 | 集積回路装置及び電子機器 |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4862242A (en) * | 1983-12-05 | 1989-08-29 | General Electric Company | Semiconductor wafer with an electrically-isolated semiconductor device |
US4646124A (en) * | 1984-07-30 | 1987-02-24 | Sprague Electric Company | Level shifting BIMOS integrated circuit |
IT1214806B (it) * | 1984-09-21 | 1990-01-18 | Ates Componenti Elettron | Dispositivo integrato monolitico di potenza e semiconduttore |
US4742377A (en) * | 1985-02-21 | 1988-05-03 | General Instrument Corporation | Schottky barrier device with doped composite guard ring |
JP2533500B2 (ja) * | 1986-09-24 | 1996-09-11 | 株式会社日立製作所 | 半導体装置の製造方法 |
IT1215024B (it) * | 1986-10-01 | 1990-01-31 | Sgs Microelettronica Spa | Processo per la formazione di un dispositivo monolitico a semiconduttore di alta tensione |
JPH07108093B2 (ja) * | 1987-01-14 | 1995-11-15 | 松下電工株式会社 | インバ−タ装置 |
JPS63198367A (ja) * | 1987-02-13 | 1988-08-17 | Toshiba Corp | 半導体装置 |
-
1989
- 1989-02-27 IT IT8919570A patent/IT1228900B/it active
-
1990
- 1990-02-12 DE DE69022262T patent/DE69022262T2/de not_active Expired - Fee Related
- 1990-02-12 EP EP90200306A patent/EP0385524B1/en not_active Expired - Lifetime
- 1990-02-14 US US07/480,162 patent/US5072278A/en not_active Expired - Lifetime
- 1990-02-26 JP JP2042736A patent/JPH02253653A/ja active Pending
- 1990-02-27 KR KR1019900002471A patent/KR900013643A/ko not_active Application Discontinuation
Also Published As
Publication number | Publication date |
---|---|
US5072278A (en) | 1991-12-10 |
DE69022262T2 (de) | 1996-05-15 |
IT8919570A0 (it) | 1989-02-27 |
KR900013643A (ko) | 1990-09-06 |
JPH02253653A (ja) | 1990-10-12 |
EP0385524B1 (en) | 1995-09-13 |
EP0385524A2 (en) | 1990-09-05 |
DE69022262D1 (de) | 1995-10-19 |
EP0385524A3 (en) | 1991-08-14 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
TA | Fee payment date (situation as of event date), data collected since 19931001 |
Effective date: 19970227 |