DE69128297T2 - Halbleiterbauelement - Google Patents

Halbleiterbauelement

Info

Publication number
DE69128297T2
DE69128297T2 DE69128297T DE69128297T DE69128297T2 DE 69128297 T2 DE69128297 T2 DE 69128297T2 DE 69128297 T DE69128297 T DE 69128297T DE 69128297 T DE69128297 T DE 69128297T DE 69128297 T2 DE69128297 T2 DE 69128297T2
Authority
DE
Germany
Prior art keywords
semiconductor device
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69128297T
Other languages
English (en)
Other versions
DE69128297D1 (de
Inventor
Leonardus Johan Van Roozendaal
De Vries Rene Gerardus Penning
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Koninklijke Philips NV
Original Assignee
Koninklijke Philips Electronics NV
Philips Electronics NV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Koninklijke Philips Electronics NV, Philips Electronics NV filed Critical Koninklijke Philips Electronics NV
Application granted granted Critical
Publication of DE69128297D1 publication Critical patent/DE69128297D1/de
Publication of DE69128297T2 publication Critical patent/DE69128297T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/0203—Particular design considerations for integrated circuits
    • H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
    • H01L27/0251—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
DE69128297T 1990-04-06 1991-04-03 Halbleiterbauelement Expired - Fee Related DE69128297T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB9007875A GB2242781A (en) 1990-04-06 1990-04-06 A semiconductor device

Publications (2)

Publication Number Publication Date
DE69128297D1 DE69128297D1 (de) 1998-01-15
DE69128297T2 true DE69128297T2 (de) 1998-05-28

Family

ID=10674043

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69128297T Expired - Fee Related DE69128297T2 (de) 1990-04-06 1991-04-03 Halbleiterbauelement

Country Status (5)

Country Link
EP (1) EP0451904B1 (de)
JP (1) JP2726575B2 (de)
KR (1) KR100189036B1 (de)
DE (1) DE69128297T2 (de)
GB (1) GB2242781A (de)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE4341170C2 (de) * 1993-12-02 2001-05-03 Siemens Ag ESD-Schutzstruktur für integrierte Schaltungen
US6310380B1 (en) * 2000-03-06 2001-10-30 Chartered Semiconductor Manufacturing, Inc. Electrostatic discharge protection transistor structure with a trench extending through the source or drain silicide layers
JP2008177466A (ja) * 2007-01-22 2008-07-31 Epson Imaging Devices Corp 表示装置およびその表示装置を備えた電子機器

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61207051A (ja) * 1985-03-11 1986-09-13 Nec Corp 半導体装置
JPS62274776A (ja) * 1986-05-23 1987-11-28 Hitachi Ltd 半導体装置
JPS63160328A (ja) * 1986-12-24 1988-07-04 Mitsubishi Electric Corp 半導体装置の製造方法

Also Published As

Publication number Publication date
GB9007875D0 (en) 1990-06-06
EP0451904A1 (de) 1991-10-16
JP2726575B2 (ja) 1998-03-11
KR100189036B1 (ko) 1999-06-01
GB2242781A (en) 1991-10-09
DE69128297D1 (de) 1998-01-15
JPH04226062A (ja) 1992-08-14
KR910019211A (ko) 1991-11-30
EP0451904B1 (de) 1997-12-03

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8327 Change in the person/name/address of the patent owner

Owner name: KONINKLIJKE PHILIPS ELECTRONICS N.V., EINDHOVEN, N

8320 Willingness to grant licences declared (paragraph 23)
8339 Ceased/non-payment of the annual fee