DE69127037T2 - Kupfer-Germanium Verbindungen, die bei Niedrigtemperatur hergestellt werden können - Google Patents

Kupfer-Germanium Verbindungen, die bei Niedrigtemperatur hergestellt werden können

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Publication number
DE69127037T2
DE69127037T2 DE1991627037 DE69127037T DE69127037T2 DE 69127037 T2 DE69127037 T2 DE 69127037T2 DE 1991627037 DE1991627037 DE 1991627037 DE 69127037 T DE69127037 T DE 69127037T DE 69127037 T2 DE69127037 T2 DE 69127037T2
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Germany
Prior art keywords
copper
produced
low temperatures
germanium compounds
germanium
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE1991627037
Other languages
English (en)
Other versions
DE69127037D1 (de
Inventor
Mohamed Osama Aboelfotoh
Lia Krusin-Elbaum
Yuan-Chen Sun
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
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Filing date
Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Application granted granted Critical
Publication of DE69127037D1 publication Critical patent/DE69127037D1/de
Publication of DE69127037T2 publication Critical patent/DE69127037T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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    • H01L29/4975—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET the conductor material next to the insulator being a composite material, e.g. organic material, TiN, MoSi2 being a silicide layer, e.g. TiSi2
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DE1991627037 1990-08-01 1991-03-02 Kupfer-Germanium Verbindungen, die bei Niedrigtemperatur hergestellt werden können Expired - Fee Related DE69127037T2 (de)

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CA2089791C (en) * 1992-04-24 1998-11-24 Michael J. Brady Electronic devices having metallurgies containing copper-semiconductor compounds
JP2534434B2 (ja) * 1992-04-30 1996-09-18 インターナショナル・ビジネス・マシーンズ・コーポレイション 耐酸化性化合物およびその製造方法
US5288456A (en) * 1993-02-23 1994-02-22 International Business Machines Corporation Compound with room temperature electrical resistivity comparable to that of elemental copper
US5571744A (en) * 1993-08-27 1996-11-05 National Semiconductor Corporation Defect free CMOS process
US6271595B1 (en) 1999-01-14 2001-08-07 International Business Machines Corporation Method for improving adhesion to copper
TW478101B (en) * 2000-03-23 2002-03-01 Ibm Structure for protecting copper interconnects in low dielectric constant materials from oxidation
JP2003045960A (ja) * 2001-08-01 2003-02-14 Matsushita Electric Ind Co Ltd 半導体装置及びその製造方法
US7491643B2 (en) * 2006-05-24 2009-02-17 International Business Machines Corporation Method and structure for reducing contact resistance between silicide contact and overlying metallization
RU2458429C1 (ru) * 2011-03-10 2012-08-10 Закрытое акционерное общество "Научно-производственная фирма "Микран" Способ получения тонкопленочного медно-германиевого соединения
US9988713B2 (en) 2013-03-12 2018-06-05 Arizona Board Of Regents On Behalf Of Arizona State University Thin film devices and methods for preparing thin film devices
US9147605B2 (en) 2013-06-14 2015-09-29 Arizona Board Of Regents On Behalf Of Arizona State University Thin film devices and low temperature process to make thin film devices
US9559249B2 (en) 2014-07-22 2017-01-31 Arizona Board Of Regents Microwave-annealed indium gallium zinc oxide films and methods of making the same

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DE1806980A1 (de) * 1967-11-15 1969-06-19 Fairchild Camera Instr Co Halbleiter-Bauelement
JPS5787127A (en) * 1980-11-20 1982-05-31 Seiko Epson Corp Manufacture of semiconductor device
JPS58139422A (ja) * 1982-02-15 1983-08-18 Univ Tohoku Ｃｕ−Ｓｉ合金半導体とその製造法
JPS639926A (ja) * 1986-07-01 1988-01-16 Seiko Instr & Electronics Ltd 半導体装置の製造方法
JPS6373660A (ja) * 1986-09-17 1988-04-04 Fujitsu Ltd 半導体装置
JPS63213372A (ja) * 1987-02-27 1988-09-06 Sharp Corp 電界効果型半導体装置
JPS6481251A (en) * 1987-09-22 1989-03-27 Fujitsu Ltd Prevention of oxidation of copper electrode wiring in lsi and its apparatus
JPH01124238A (ja) * 1987-11-09 1989-05-17 Fujitsu Ltd 半導体集積回路用配線およびその形成方法
JPH02119140A (ja) * 1988-10-28 1990-05-07 Seiko Epson Corp 集積回路装置
EP0419763A1 (de) * 1989-09-29 1991-04-03 International Business Machines Corporation Stabile Kupfer beinhaltende Verschaltungsmetallisierung für VLSI Bauelemente

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JPH088347B2 (ja) 1996-01-29
JPH04233762A (ja) 1992-08-21
EP0769808B1 (de) 2001-11-28
DE69132842D1 (de) 2002-01-10
EP0472804A2 (de) 1992-03-04
EP0472804A3 (en) 1992-06-24
EP0472804B1 (de) 1997-07-30
DE69132842T2 (de) 2002-08-01
EP0769808A3 (de) 1998-01-07
DE69127037D1 (de) 1997-09-04
EP0769808A2 (de) 1997-04-23

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