DE69122958D1 - Direktes verbinden von kupfer auf aluminiumnitridsubstrate - Google Patents

Direktes verbinden von kupfer auf aluminiumnitridsubstrate

Info

Publication number
DE69122958D1
DE69122958D1 DE69122958T DE69122958T DE69122958D1 DE 69122958 D1 DE69122958 D1 DE 69122958D1 DE 69122958 T DE69122958 T DE 69122958T DE 69122958 T DE69122958 T DE 69122958T DE 69122958 D1 DE69122958 D1 DE 69122958D1
Authority
DE
Germany
Prior art keywords
aluminum nitride
directly connecting
connecting copper
nitride substrates
substrates
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69122958T
Other languages
English (en)
Other versions
DE69122958T2 (de
Inventor
Kyung Paik
Constantine Neugebauer
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Harris Corp
Original Assignee
Harris Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Harris Corp filed Critical Harris Corp
Publication of DE69122958D1 publication Critical patent/DE69122958D1/de
Application granted granted Critical
Publication of DE69122958T2 publication Critical patent/DE69122958T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B37/00—Joining burned ceramic articles with other burned ceramic articles or other articles by heating
    • C04B37/02—Joining burned ceramic articles with other burned ceramic articles or other articles by heating with metallic articles
    • C04B37/021—Joining burned ceramic articles with other burned ceramic articles or other articles by heating with metallic articles in a direct manner, e.g. direct copper bonding [DCB]
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B37/00—Joining burned ceramic articles with other burned ceramic articles or other articles by heating
    • C04B37/02—Joining burned ceramic articles with other burned ceramic articles or other articles by heating with metallic articles
    • C04B37/023—Joining burned ceramic articles with other burned ceramic articles or other articles by heating with metallic articles characterised by the interlayer used
    • C04B37/025—Joining burned ceramic articles with other burned ceramic articles or other articles by heating with metallic articles characterised by the interlayer used consisting of glass or ceramic material
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B41/00—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
    • C04B41/0036—Laser treatment
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B41/00—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
    • C04B41/80—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone of only ceramics
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
    • C04B2235/65—Aspects relating to heat treatments of ceramic bodies such as green ceramics or pre-sintered ceramics, e.g. burning, sintering or melting processes
    • C04B2235/656—Aspects relating to heat treatments of ceramic bodies such as green ceramics or pre-sintered ceramics, e.g. burning, sintering or melting processes characterised by specific heating conditions during heat treatment
    • C04B2235/6562—Heating rate
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
    • C04B2235/65—Aspects relating to heat treatments of ceramic bodies such as green ceramics or pre-sintered ceramics, e.g. burning, sintering or melting processes
    • C04B2235/656—Aspects relating to heat treatments of ceramic bodies such as green ceramics or pre-sintered ceramics, e.g. burning, sintering or melting processes characterised by specific heating conditions during heat treatment
    • C04B2235/6565—Cooling rate
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
    • C04B2235/65—Aspects relating to heat treatments of ceramic bodies such as green ceramics or pre-sintered ceramics, e.g. burning, sintering or melting processes
    • C04B2235/658—Atmosphere during thermal treatment
    • C04B2235/6586—Processes characterised by the flow of gas
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
    • C04B2235/65—Aspects relating to heat treatments of ceramic bodies such as green ceramics or pre-sintered ceramics, e.g. burning, sintering or melting processes
    • C04B2235/658—Atmosphere during thermal treatment
    • C04B2235/6588—Water vapor containing atmospheres
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2237/00—Aspects relating to ceramic laminates or to joining of ceramic articles with other articles by heating
    • C04B2237/02—Aspects relating to interlayers, e.g. used to join ceramic articles with other articles by heating
    • C04B2237/04—Ceramic interlayers
    • C04B2237/06—Oxidic interlayers
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2237/00—Aspects relating to ceramic laminates or to joining of ceramic articles with other articles by heating
    • C04B2237/30—Composition of layers of ceramic laminates or of ceramic or metallic articles to be joined by heating, e.g. Si substrates
    • C04B2237/32—Ceramic
    • C04B2237/36—Non-oxidic
    • C04B2237/366—Aluminium nitride
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2237/00—Aspects relating to ceramic laminates or to joining of ceramic articles with other articles by heating
    • C04B2237/30—Composition of layers of ceramic laminates or of ceramic or metallic articles to be joined by heating, e.g. Si substrates
    • C04B2237/40—Metallic
    • C04B2237/407—Copper
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2237/00—Aspects relating to ceramic laminates or to joining of ceramic articles with other articles by heating
    • C04B2237/50—Processing aspects relating to ceramic laminates or to the joining of ceramic articles with other articles by heating
    • C04B2237/70—Forming laminates or joined articles comprising layers of a specific, unusual thickness
    • C04B2237/704—Forming laminates or joined articles comprising layers of a specific, unusual thickness of one or more of the ceramic layers or articles
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2237/00—Aspects relating to ceramic laminates or to joining of ceramic articles with other articles by heating
    • C04B2237/50—Processing aspects relating to ceramic laminates or to the joining of ceramic articles with other articles by heating
    • C04B2237/70—Forming laminates or joined articles comprising layers of a specific, unusual thickness
    • C04B2237/708—Forming laminates or joined articles comprising layers of a specific, unusual thickness of one or more of the interlayers
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00—Printed circuits
    • H05K1/02—Details
    • H05K1/03—Use of materials for the substrate
    • H05K1/0306—Inorganic insulating substrates, e.g. ceramic, glass
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/02—Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding
    • H05K3/022—Processes for manufacturing precursors of printed circuits, i.e. copper-clad substrates
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/38—Improvement of the adhesion between the insulating substrate and the metal

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Ceramic Engineering (AREA)
  • Materials Engineering (AREA)
  • Structural Engineering (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Ceramic Products (AREA)
  • Manufacturing Of Printed Wiring (AREA)
DE69122958T 1990-12-24 1991-12-20 Direktes verbinden von kupfer auf aluminiumnitridsubstrate Expired - Fee Related DE69122958T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US07/632,876 US5418002A (en) 1990-12-24 1990-12-24 Direct bonding of copper to aluminum nitride substrates
PCT/US1991/009611 WO1992011113A1 (en) 1990-12-24 1991-12-20 Direct bonding of copper to aluminum nitride substrates

Publications (2)

Publication Number Publication Date
DE69122958D1 true DE69122958D1 (de) 1996-12-05
DE69122958T2 DE69122958T2 (de) 1997-05-28

Family

ID=24537319

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69122958T Expired - Fee Related DE69122958T2 (de) 1990-12-24 1991-12-20 Direktes verbinden von kupfer auf aluminiumnitridsubstrate

Country Status (6)

Country Link
US (1) US5418002A (de)
EP (1) EP0516819B1 (de)
JP (1) JP3111077B2 (de)
CA (1) CA2076549C (de)
DE (1) DE69122958T2 (de)
WO (1) WO1992011113A1 (de)

Families Citing this family (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5965193A (en) * 1994-04-11 1999-10-12 Dowa Mining Co., Ltd. Process for preparing a ceramic electronic circuit board and process for preparing aluminum or aluminum alloy bonded ceramic material
ATE178589T1 (de) 1994-09-20 1999-04-15 Ono Pharmaceutical Co Amidinophenol-derivate als protease-hemmende verbindungen
DE4444681C2 (de) * 1994-11-26 1998-08-27 Schulz Harder Juergen Keramik-Substrat sowie Verfahren zu seiner Herstellung
DE19603822C2 (de) * 1996-02-02 1998-10-29 Curamik Electronics Gmbh Verfahren zur Herstellung eines Keramik-Substrat sowie Keramik-Substrat
US5916378A (en) * 1997-03-11 1999-06-29 Wj Semiconductor Equipment Group, Inc. Method of reducing metal contamination during semiconductor processing in a reactor having metal components
US6124635A (en) * 1997-03-21 2000-09-26 Honda Giken Kogyo Kabushiki Kaisha Functionally gradient integrated metal-ceramic member and semiconductor circuit substrate application thereof
US6194246B1 (en) 1999-08-25 2001-02-27 Motorola Inc. Process for fabricating electronic devices having a thermally conductive substrate
AT407987B (de) * 1999-11-17 2001-07-25 Electrovac Verfahren zur vorbereitung eines a1n-substrates auf die verbindung mit einer kupferschicht
US6740221B2 (en) 2001-03-15 2004-05-25 Applied Materials Inc. Method of forming copper interconnects
ATE400538T1 (de) * 2001-03-16 2008-07-15 Electrovac Aiuminiumnitridsubstrat sowie verfahren zur vorbereitung dieses substrates auf die verbindung mit einer kupferfolie
US20030113947A1 (en) * 2001-12-19 2003-06-19 Vandentop Gilroy J. Electrical/optical integration scheme using direct copper bonding
WO2003063067A1 (en) * 2002-01-24 2003-07-31 Chatterbox Systems, Inc. Method and system for locating positions in printed texts and delivering multimedia information
WO2003085713A1 (en) * 2002-04-03 2003-10-16 Applied Materials, Inc. Homogeneous copper-tin alloy plating for enhancement of electro-migration resistance in interconnects
US20040118699A1 (en) * 2002-10-02 2004-06-24 Applied Materials, Inc. Homogeneous copper-palladium alloy plating for enhancement of electro-migration resistance in interconnects
US20070231590A1 (en) * 2006-03-31 2007-10-04 Stellar Industries Corp. Method of Bonding Metals to Ceramics
US20100147571A1 (en) * 2007-04-24 2010-06-17 Claus Peter Kluge Component having a metalized ceramic base
KR100841376B1 (ko) * 2007-06-12 2008-06-26 삼성에스디아이 주식회사 접합방법 및 그를 이용한 유기전계발광표시장치의 제조방법
KR100891384B1 (ko) * 2007-06-14 2009-04-02 삼성모바일디스플레이주식회사 플렉서블 기판 접합 및 탈착장치
KR100889625B1 (ko) 2007-07-19 2009-03-20 삼성모바일디스플레이주식회사 접합방법 및 그를 이용한 유기전계발광표시장치의 제조방법
CN101814439B (zh) * 2010-04-06 2011-07-20 淄博市临淄银河高技术开发有限公司 Igbt模块用低热阻陶瓷覆铜板的制作工艺
TWI412569B (zh) * 2010-11-02 2013-10-21 Ind Tech Res Inst 接合材料、接合方法、與接合結構
DE102012101057A1 (de) * 2011-12-27 2013-06-27 Curamik Electronics Gmbh Verfahren zur Herstellung von DCB-Substraten
DE102018101198A1 (de) * 2018-01-19 2019-07-25 Osram Opto Semiconductors Gmbh Verfahren zum herstellen eines gehäusedeckels für ein laserbauelement und gehäusedeckel für ein laserbauelement sowie laserbauelement
CN114309955B (zh) * 2022-01-13 2023-03-14 江苏富乐华半导体科技股份有限公司 一种陶瓷覆铜基板及其激光加工工艺

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3766634A (en) * 1972-04-20 1973-10-23 Gen Electric Method of direct bonding metals to non-metallic substrates
US3994430A (en) * 1975-07-30 1976-11-30 General Electric Company Direct bonding of metals to ceramics and metals
JPS53130714A (en) * 1977-04-20 1978-11-15 Kogyo Gijutsuin Method of bonding nitride base ceramics and silver
US4409278A (en) * 1981-04-16 1983-10-11 General Electric Company Blister-free direct bonding of metals to ceramics and metals
EP0097944B1 (de) * 1982-06-29 1988-06-01 Kabushiki Kaisha Toshiba Verfahren zum direkten Verbinden von keramischen- und Metallkörpern und derartiger Verbundkörper
DE3469827D1 (en) * 1983-08-23 1988-04-14 Bbc Brown Boveri & Cie Ceramic-metallic element
EP0153737B1 (de) * 1984-02-27 1993-07-28 Kabushiki Kaisha Toshiba Schaltungssubstrat mit hoher Wärmeleitfähigkeit
US4563383A (en) * 1984-03-30 1986-01-07 General Electric Company Direct bond copper ceramic substrate for electronic applications
CH660176A5 (de) * 1984-07-06 1987-03-31 Bbc Brown Boveri & Cie Metall-keramik-verbundelement und verfahren zu dessen herstellung.
DE3534886A1 (de) * 1984-09-30 1986-04-03 Kabushiki Kaisha Toshiba, Kawasaki, Kanagawa Verfahren zum herstellen von aluminiumnitrid-keramik-platten
JPS62207789A (ja) * 1986-03-08 1987-09-12 日本特殊陶業株式会社 窒化アルミニウム製基材の表面構造及びその製造法
EP0372910B1 (de) * 1988-12-07 1994-06-29 Sumitomo Chemical Company Limited Verfahren zur Herstellung eines Sinterkörpers aus Aluminiumnitrid

Also Published As

Publication number Publication date
CA2076549A1 (en) 1992-06-25
EP0516819A4 (en) 1993-05-12
JP3111077B2 (ja) 2000-11-20
DE69122958T2 (de) 1997-05-28
US5418002A (en) 1995-05-23
JPH05504933A (ja) 1993-07-29
EP0516819A1 (de) 1992-12-09
WO1992011113A1 (en) 1992-07-09
EP0516819B1 (de) 1996-10-30
CA2076549C (en) 2000-10-31

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