DE69122150D1 - Halbleiter-Speichereinrichtung mit verbesserter Kontrollfunktion für Datenbusse - Google Patents

Halbleiter-Speichereinrichtung mit verbesserter Kontrollfunktion für Datenbusse

Info

Publication number
DE69122150D1
DE69122150D1 DE69122150T DE69122150T DE69122150D1 DE 69122150 D1 DE69122150 D1 DE 69122150D1 DE 69122150 T DE69122150 T DE 69122150T DE 69122150 T DE69122150 T DE 69122150T DE 69122150 D1 DE69122150 D1 DE 69122150D1
Authority
DE
Germany
Prior art keywords
memory device
semiconductor memory
control function
data buses
improved control
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69122150T
Other languages
English (en)
Other versions
DE69122150T2 (de
Inventor
Hidenori Nomura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu VLSI Ltd
Fujitsu Ltd
Original Assignee
Fujitsu VLSI Ltd
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu VLSI Ltd, Fujitsu Ltd filed Critical Fujitsu VLSI Ltd
Publication of DE69122150D1 publication Critical patent/DE69122150D1/de
Application granted granted Critical
Publication of DE69122150T2 publication Critical patent/DE69122150T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C11/00Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C7/00Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/10Input/output [I/O] data interface arrangements, e.g. I/O data control circuits, I/O data buffers
    • G11C7/1048Data bus control circuits, e.g. precharging, presetting, equalising
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C11/00Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/24Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using capacitors
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C7/00Arrangements for writing information into, or reading information out from, a digital store

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Dram (AREA)
  • Static Random-Access Memory (AREA)
DE69122150T 1990-03-09 1991-03-08 Halbleiter-Speichereinrichtung mit verbesserter Kontrollfunktion für Datenbusse Expired - Fee Related DE69122150T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2058925A JP2545481B2 (ja) 1990-03-09 1990-03-09 半導体記憶装置

Publications (2)

Publication Number Publication Date
DE69122150D1 true DE69122150D1 (de) 1996-10-24
DE69122150T2 DE69122150T2 (de) 1997-01-30

Family

ID=13098408

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69122150T Expired - Fee Related DE69122150T2 (de) 1990-03-09 1991-03-08 Halbleiter-Speichereinrichtung mit verbesserter Kontrollfunktion für Datenbusse

Country Status (5)

Country Link
US (1) US5278788A (de)
EP (1) EP0451000B1 (de)
JP (1) JP2545481B2 (de)
KR (1) KR940008143B1 (de)
DE (1) DE69122150T2 (de)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR960000600B1 (ko) * 1992-12-31 1996-01-09 현대전자산업주식회사 펄스 쓰기 드라이버 회로
US5546338A (en) * 1994-08-26 1996-08-13 Townsend And Townsend Khourie And Crew Fast voltage equilibration of differential data lines
KR100246781B1 (ko) * 1996-12-28 2000-03-15 김영환 플래쉬 메모리 셀의 읽기 방법 및 읽기 전압 발생 회로
US5889728A (en) * 1998-02-10 1999-03-30 Cypress Semiconductor Corporation Write control method for memory devices
US6081475A (en) * 1998-02-10 2000-06-27 Cypress Semiconductor Corporation Write control apparatus for memory devices
US6366127B1 (en) * 1999-05-18 2002-04-02 The University Of Rochester Digital CMOS voltage interface circuits
KR101239226B1 (ko) * 2007-08-02 2013-03-06 삼성전자주식회사 언먹스드 비트라인 스킴을 위한 기입 구동회로

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5951073B2 (ja) * 1980-03-27 1984-12-12 富士通株式会社 半導体記憶装置
JPH0642536B2 (ja) * 1985-08-16 1994-06-01 富士通株式会社 半導体記憶装置
JPS6376192A (ja) * 1986-09-19 1988-04-06 Fujitsu Ltd 半導体記憶装置
JPS6376193A (ja) * 1986-09-19 1988-04-06 Fujitsu Ltd 半導体記憶装置
JP2569554B2 (ja) * 1987-05-13 1997-01-08 三菱電機株式会社 ダイナミツクram
KR900006293B1 (ko) * 1987-06-20 1990-08-27 삼성전자 주식회사 씨모오스 디램의 데이터 전송회로

Also Published As

Publication number Publication date
JPH03260992A (ja) 1991-11-20
JP2545481B2 (ja) 1996-10-16
KR940008143B1 (ko) 1994-09-03
KR910017422A (ko) 1991-11-05
EP0451000A1 (de) 1991-10-09
DE69122150T2 (de) 1997-01-30
EP0451000B1 (de) 1996-09-18
US5278788A (en) 1994-01-11

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee