DE69122150D1 - Halbleiter-Speichereinrichtung mit verbesserter Kontrollfunktion für Datenbusse - Google Patents
Halbleiter-Speichereinrichtung mit verbesserter Kontrollfunktion für DatenbusseInfo
- Publication number
- DE69122150D1 DE69122150D1 DE69122150T DE69122150T DE69122150D1 DE 69122150 D1 DE69122150 D1 DE 69122150D1 DE 69122150 T DE69122150 T DE 69122150T DE 69122150 T DE69122150 T DE 69122150T DE 69122150 D1 DE69122150 D1 DE 69122150D1
- Authority
- DE
- Germany
- Prior art keywords
- memory device
- semiconductor memory
- control function
- data buses
- improved control
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
- G11C7/10—Input/output [I/O] data interface arrangements, e.g. I/O data control circuits, I/O data buffers
- G11C7/1048—Data bus control circuits, e.g. precharging, presetting, equalising
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/24—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using capacitors
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Dram (AREA)
- Static Random-Access Memory (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2058925A JP2545481B2 (ja) | 1990-03-09 | 1990-03-09 | 半導体記憶装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
DE69122150D1 true DE69122150D1 (de) | 1996-10-24 |
DE69122150T2 DE69122150T2 (de) | 1997-01-30 |
Family
ID=13098408
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69122150T Expired - Fee Related DE69122150T2 (de) | 1990-03-09 | 1991-03-08 | Halbleiter-Speichereinrichtung mit verbesserter Kontrollfunktion für Datenbusse |
Country Status (5)
Country | Link |
---|---|
US (1) | US5278788A (de) |
EP (1) | EP0451000B1 (de) |
JP (1) | JP2545481B2 (de) |
KR (1) | KR940008143B1 (de) |
DE (1) | DE69122150T2 (de) |
Families Citing this family (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR960000600B1 (ko) * | 1992-12-31 | 1996-01-09 | 현대전자산업주식회사 | 펄스 쓰기 드라이버 회로 |
US5546338A (en) * | 1994-08-26 | 1996-08-13 | Townsend And Townsend Khourie And Crew | Fast voltage equilibration of differential data lines |
KR100246781B1 (ko) * | 1996-12-28 | 2000-03-15 | 김영환 | 플래쉬 메모리 셀의 읽기 방법 및 읽기 전압 발생 회로 |
US5889728A (en) * | 1998-02-10 | 1999-03-30 | Cypress Semiconductor Corporation | Write control method for memory devices |
US6081475A (en) * | 1998-02-10 | 2000-06-27 | Cypress Semiconductor Corporation | Write control apparatus for memory devices |
US6366127B1 (en) * | 1999-05-18 | 2002-04-02 | The University Of Rochester | Digital CMOS voltage interface circuits |
KR101239226B1 (ko) * | 2007-08-02 | 2013-03-06 | 삼성전자주식회사 | 언먹스드 비트라인 스킴을 위한 기입 구동회로 |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5951073B2 (ja) * | 1980-03-27 | 1984-12-12 | 富士通株式会社 | 半導体記憶装置 |
JPH0642536B2 (ja) * | 1985-08-16 | 1994-06-01 | 富士通株式会社 | 半導体記憶装置 |
JPS6376192A (ja) * | 1986-09-19 | 1988-04-06 | Fujitsu Ltd | 半導体記憶装置 |
JPS6376193A (ja) * | 1986-09-19 | 1988-04-06 | Fujitsu Ltd | 半導体記憶装置 |
JP2569554B2 (ja) * | 1987-05-13 | 1997-01-08 | 三菱電機株式会社 | ダイナミツクram |
KR900006293B1 (ko) * | 1987-06-20 | 1990-08-27 | 삼성전자 주식회사 | 씨모오스 디램의 데이터 전송회로 |
-
1990
- 1990-03-09 JP JP2058925A patent/JP2545481B2/ja not_active Expired - Lifetime
-
1991
- 1991-03-07 US US07/665,865 patent/US5278788A/en not_active Expired - Lifetime
- 1991-03-08 EP EP91400656A patent/EP0451000B1/de not_active Expired - Lifetime
- 1991-03-08 DE DE69122150T patent/DE69122150T2/de not_active Expired - Fee Related
- 1991-03-09 KR KR1019910003802A patent/KR940008143B1/ko not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
JPH03260992A (ja) | 1991-11-20 |
JP2545481B2 (ja) | 1996-10-16 |
KR940008143B1 (ko) | 1994-09-03 |
KR910017422A (ko) | 1991-11-05 |
EP0451000A1 (de) | 1991-10-09 |
DE69122150T2 (de) | 1997-01-30 |
EP0451000B1 (de) | 1996-09-18 |
US5278788A (en) | 1994-01-11 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8339 | Ceased/non-payment of the annual fee |