DE69121315D1 - Festwertspeicheranordnung - Google Patents

Festwertspeicheranordnung

Info

Publication number
DE69121315D1
DE69121315D1 DE69121315T DE69121315T DE69121315D1 DE 69121315 D1 DE69121315 D1 DE 69121315D1 DE 69121315 T DE69121315 T DE 69121315T DE 69121315 T DE69121315 T DE 69121315T DE 69121315 D1 DE69121315 D1 DE 69121315D1
Authority
DE
Germany
Prior art keywords
read
memory arrangement
memory
arrangement
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69121315T
Other languages
English (en)
Other versions
DE69121315T2 (de
Inventor
Misao Higuchi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Electronics Corp
Original Assignee
NEC Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp filed Critical NEC Corp
Application granted granted Critical
Publication of DE69121315D1 publication Critical patent/DE69121315D1/de
Publication of DE69121315T2 publication Critical patent/DE69121315T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/10—Programming or data input circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C17/00—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards
    • G11C17/14—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards in which contents are determined by selectively establishing, breaking or modifying connecting links by permanently altering the state of coupling elements, e.g. PROM
    • G11C17/18—Auxiliary circuits, e.g. for writing into memory
DE69121315T 1990-05-31 1991-05-30 Festwertspeicheranordnung Expired - Fee Related DE69121315T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP14251490A JP2900523B2 (ja) 1990-05-31 1990-05-31 不揮発性半導体メモリ装置の書込回路

Publications (2)

Publication Number Publication Date
DE69121315D1 true DE69121315D1 (de) 1996-09-19
DE69121315T2 DE69121315T2 (de) 1997-01-23

Family

ID=15317127

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69121315T Expired - Fee Related DE69121315T2 (de) 1990-05-31 1991-05-30 Festwertspeicheranordnung

Country Status (4)

Country Link
US (1) US5331600A (de)
EP (1) EP0459794B1 (de)
JP (1) JP2900523B2 (de)
DE (1) DE69121315T2 (de)

Families Citing this family (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3432548B2 (ja) * 1993-07-26 2003-08-04 株式会社日立製作所 半導体記憶装置
US5537350A (en) * 1993-09-10 1996-07-16 Intel Corporation Method and apparatus for sequential programming of the bits in a word of a flash EEPROM memory array
US5530803A (en) * 1994-04-14 1996-06-25 Advanced Micro Devices, Inc. Method and apparatus for programming memory devices
JP3517489B2 (ja) * 1995-09-04 2004-04-12 株式会社日立製作所 不揮発性半導体記憶装置
US5644531A (en) * 1995-11-01 1997-07-01 Advanced Micro Devices, Inc. Program algorithm for low voltage single power supply flash memories
JPH09198873A (ja) * 1996-01-19 1997-07-31 Sharp Corp 半導体記憶装置
JP3734550B2 (ja) * 1996-01-30 2006-01-11 株式会社ルネサステクノロジ 半導体記憶装置
FR2758645B1 (fr) * 1997-01-22 2001-12-14 Sgs Thomson Microelectronics Dispositif et procede de programmation d'une memoire
US5787039A (en) * 1997-03-06 1998-07-28 Macronix International Co., Ltd. Low current floating gate programming with bit-by-bit verification
JP3214395B2 (ja) * 1997-05-20 2001-10-02 日本電気株式会社 不揮発性半導体記憶装置
JP3156636B2 (ja) * 1997-05-30 2001-04-16 日本電気株式会社 不揮発性半導体記憶装置
JP3488631B2 (ja) * 1998-04-24 2004-01-19 株式会社東芝 半導体記憶装置
KR100338549B1 (ko) * 1999-06-22 2002-05-27 윤종용 고밀도 노어형 플래시 메모리 장치 및 그것의 프로그램 방법
EP1137011B1 (de) * 2000-03-21 2008-12-10 STMicroelectronics S.r.l. Strang-programmierbarer nichtflüchtiger Speicher mit NOR-Architektur
JP4055103B2 (ja) 2000-10-02 2008-03-05 株式会社ルネサステクノロジ 不揮発性メモリおよびそれを内蔵した半導体集積回路並びに不揮発性メモリの書込み方法
US6785168B2 (en) * 2002-12-27 2004-08-31 Hynix Semiconductor Inc. Semiconductor memory device having advanced prefetch block
US7002860B2 (en) * 2003-11-06 2006-02-21 International Business Machines Corporation Multilevel register-file bit-read method and apparatus
KR100694967B1 (ko) * 2005-06-29 2007-03-14 주식회사 하이닉스반도체 프로그램 동작시 에러 발생 비율을 감소시키는 플래시메모리 장치 및 그 프로그램 동작 제어 방법
TWI308692B (en) * 2005-10-26 2009-04-11 Sunplus Technology Co Ltd Programmable memory and accessing method of the same
EP3284729A4 (de) 2015-08-28 2018-12-19 Koa Glass Co. Ltd. Glasbeschichtetes lichtakkumulationsmaterial und verfahren zur herstellung eines glasbeschichteten lichtakkumulationsmaterials

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6180597A (ja) * 1984-09-26 1986-04-24 Hitachi Ltd 半導体記憶装置
DE3543911A1 (de) * 1984-12-14 1986-06-26 Mitsubishi Denki K.K., Tokio/Tokyo Digitale verzoegerungseinheit
JPS61294562A (ja) * 1985-06-21 1986-12-25 Mitsubishi Electric Corp 半導体記憶装置
US4680738A (en) * 1985-07-30 1987-07-14 Advanced Micro Devices, Inc. Memory with sequential mode
JPH0644393B2 (ja) * 1986-04-08 1994-06-08 日本電気株式会社 半導体メモリ
CA1293565C (en) * 1986-04-28 1991-12-24 Norio Ebihara Semiconductor memory
EP0317939B1 (de) * 1987-11-25 1994-03-09 Nec Corporation Eingangsschaltung, die in eine Halbleiteranlage eingegliedert ist
US5027326A (en) * 1988-11-10 1991-06-25 Dallas Semiconductor Corporation Self-timed sequential access multiport memory
US5121360A (en) * 1990-06-19 1992-06-09 International Business Machines Corporation Video random access memory serial port access

Also Published As

Publication number Publication date
US5331600A (en) 1994-07-19
DE69121315T2 (de) 1997-01-23
EP0459794A2 (de) 1991-12-04
EP0459794B1 (de) 1996-08-14
JP2900523B2 (ja) 1999-06-02
EP0459794A3 (en) 1993-08-04
JPH0438700A (ja) 1992-02-07

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8327 Change in the person/name/address of the patent owner

Owner name: NEC ELECTRONICS CORP., KAWASAKI, KANAGAWA, JP

8339 Ceased/non-payment of the annual fee