DE69116076T2 - Heterostruktur-Feldeffekttransistor - Google Patents
Heterostruktur-FeldeffekttransistorInfo
- Publication number
- DE69116076T2 DE69116076T2 DE69116076T DE69116076T DE69116076T2 DE 69116076 T2 DE69116076 T2 DE 69116076T2 DE 69116076 T DE69116076 T DE 69116076T DE 69116076 T DE69116076 T DE 69116076T DE 69116076 T2 DE69116076 T2 DE 69116076T2
- Authority
- DE
- Germany
- Prior art keywords
- field effect
- effect transistor
- heterostructure field
- heterostructure
- transistor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 230000005669 field effect Effects 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/778—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface
- H01L29/7782—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with confinement of carriers by at least two heterojunctions, e.g. DHHEMT, quantum well HEMT, DHMODFET
- H01L29/7783—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with confinement of carriers by at least two heterojunctions, e.g. DHHEMT, quantum well HEMT, DHMODFET using III-V semiconductor material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/107—Substrate region of field-effect devices
- H01L29/1075—Substrate region of field-effect devices of field-effect transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/20—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
- H01L29/201—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds including two or more compounds, e.g. alloys
- H01L29/205—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds including two or more compounds, e.g. alloys in different semiconductor regions, e.g. heterojunctions
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Junction Field-Effect Transistors (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
GB9022756A GB2248966A (en) | 1990-10-19 | 1990-10-19 | Field effect semiconductor devices |
Publications (2)
Publication Number | Publication Date |
---|---|
DE69116076D1 DE69116076D1 (de) | 1996-02-15 |
DE69116076T2 true DE69116076T2 (de) | 1996-08-08 |
Family
ID=10684005
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69116076T Expired - Fee Related DE69116076T2 (de) | 1990-10-19 | 1991-10-10 | Heterostruktur-Feldeffekttransistor |
Country Status (5)
Country | Link |
---|---|
US (1) | US5254863A (de) |
EP (1) | EP0481555B1 (de) |
JP (1) | JPH0831596B2 (de) |
DE (1) | DE69116076T2 (de) |
GB (1) | GB2248966A (de) |
Families Citing this family (21)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5523593A (en) * | 1992-03-30 | 1996-06-04 | Hitachi, Ltd. | Compound semiconductor integrated circuit and optical regenerative repeater using the same |
FR2689683B1 (fr) * | 1992-04-07 | 1994-05-20 | Thomson Composants Microondes | Dispositif semiconducteur a transistors complementaires. |
FR2690286A1 (fr) * | 1992-04-17 | 1993-10-22 | Commissariat Energie Atomique | Cavité laser à hétérostructure semi-conductrice dissymétrique et laser équipé de cette cavité. |
US5432356A (en) * | 1993-04-02 | 1995-07-11 | Fujitsu Limited | Semiconductor heterojunction floating layer memory device and method for storing information in the same |
GB2351390A (en) * | 1999-06-16 | 2000-12-27 | Sharp Kk | A semiconductor material comprising two dopants |
US6414340B1 (en) * | 1999-11-04 | 2002-07-02 | Raytheon Company | Field effect transistor and method for making the same |
US6992319B2 (en) * | 2000-07-18 | 2006-01-31 | Epitaxial Technologies | Ultra-linear multi-channel field effect transistor |
JP2004103656A (ja) * | 2002-09-05 | 2004-04-02 | Sony Corp | 半導体装置及び半導体装置の製造方法 |
CN101432936B (zh) * | 2004-10-01 | 2011-02-02 | 菲尼萨公司 | 具有多顶侧接触的垂直腔面发射激光器 |
US7860137B2 (en) | 2004-10-01 | 2010-12-28 | Finisar Corporation | Vertical cavity surface emitting laser with undoped top mirror |
JP4333652B2 (ja) * | 2005-08-17 | 2009-09-16 | 沖電気工業株式会社 | オーミック電極、オーミック電極の製造方法、電界効果型トランジスタ、電界効果型トランジスタの製造方法、および、半導体装置 |
US7839209B2 (en) | 2006-10-05 | 2010-11-23 | Nxp B.V. | Tunnel field effect transistor |
JP4794656B2 (ja) * | 2009-06-11 | 2011-10-19 | シャープ株式会社 | 半導体装置 |
US8324661B2 (en) * | 2009-12-23 | 2012-12-04 | Intel Corporation | Quantum well transistors with remote counter doping |
US9000484B2 (en) | 2012-05-23 | 2015-04-07 | Hrl Laboratories, Llc | Non-uniform lateral profile of two-dimensional electron gas charge density in type III nitride HEMT devices using ion implantation through gray scale mask |
US9379195B2 (en) | 2012-05-23 | 2016-06-28 | Hrl Laboratories, Llc | HEMT GaN device with a non-uniform lateral two dimensional electron gas profile and method of manufacturing the same |
US8680536B2 (en) * | 2012-05-23 | 2014-03-25 | Hrl Laboratories, Llc | Non-uniform two dimensional electron gas profile in III-Nitride HEMT devices |
US10700201B2 (en) | 2012-05-23 | 2020-06-30 | Hrl Laboratories, Llc | HEMT GaN device with a non-uniform lateral two dimensional electron gas profile and method of manufacturing the same |
US9099490B2 (en) * | 2012-09-28 | 2015-08-04 | Intel Corporation | Self-aligned structures and methods for asymmetric GaN transistors and enhancement mode operation |
CN111430238B (zh) * | 2020-04-09 | 2020-12-22 | 浙江大学 | 提高二维电子气的GaN器件结构的制备方法 |
US20230253486A1 (en) * | 2022-02-09 | 2023-08-10 | Infineon Technologies Austria Ag | Type iii-v semiconductor device with structured passivation |
Family Cites Families (18)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4194935A (en) * | 1978-04-24 | 1980-03-25 | Bell Telephone Laboratories, Incorporated | Method of making high mobility multilayered heterojunction devices employing modulated doping |
JPS58143572A (ja) * | 1982-02-22 | 1983-08-26 | Nippon Telegr & Teleph Corp <Ntt> | 電界効果トランジスタ |
JPS5963769A (ja) * | 1982-10-05 | 1984-04-11 | Agency Of Ind Science & Technol | 高速半導体素子 |
JPS6012775A (ja) * | 1983-07-02 | 1985-01-23 | Agency Of Ind Science & Technol | 電界効果トランジスタ |
JPS6039869A (ja) * | 1983-08-12 | 1985-03-01 | Agency Of Ind Science & Technol | 半導体超格子構造 |
JPS62256478A (ja) * | 1986-04-30 | 1987-11-09 | Sumitomo Electric Ind Ltd | 化合物半導体装置 |
JPS62291974A (ja) * | 1986-06-12 | 1987-12-18 | Matsushita Electric Ind Co Ltd | 半導体装置 |
JPS63170A (ja) * | 1986-06-19 | 1988-01-05 | Fujitsu Ltd | 半導体装置 |
JPH0666334B2 (ja) * | 1987-02-10 | 1994-08-24 | 日本電気株式会社 | 電界効果トランジスタ |
JPS6431470A (en) * | 1987-07-27 | 1989-02-01 | Nec Corp | Field effect transistor |
JPH01114082A (ja) * | 1987-10-28 | 1989-05-02 | Hitachi Ltd | 光検出器 |
JPH0682691B2 (ja) * | 1987-11-12 | 1994-10-19 | 松下電器産業株式会社 | 電界効果型トランジスタ |
GB2219130A (en) * | 1988-05-25 | 1989-11-29 | Philips Electronic Associated | A high mobility semiconductor device |
JPH02202029A (ja) * | 1989-01-31 | 1990-08-10 | Sony Corp | 化合物半導体装置 |
JPH02231733A (ja) * | 1989-03-03 | 1990-09-13 | Sharp Corp | 半導体装置 |
JPH03171636A (ja) * | 1989-11-29 | 1991-07-25 | Oki Electric Ind Co Ltd | 電界効果トランジスタ |
US5038187A (en) * | 1989-12-01 | 1991-08-06 | Hewlett-Packard Company | Pseudomorphic MODFET structure having improved linear power performance at microwave frequencies |
US5049951A (en) * | 1990-12-20 | 1991-09-17 | Motorola, Inc. | Superlattice field effect transistor with monolayer confinement |
-
1990
- 1990-10-19 GB GB9022756A patent/GB2248966A/en not_active Withdrawn
-
1991
- 1991-10-10 DE DE69116076T patent/DE69116076T2/de not_active Expired - Fee Related
- 1991-10-10 EP EP91202629A patent/EP0481555B1/de not_active Expired - Lifetime
- 1991-10-15 US US07/776,107 patent/US5254863A/en not_active Expired - Lifetime
- 1991-10-16 JP JP3267620A patent/JPH0831596B2/ja not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
JPH04260339A (ja) | 1992-09-16 |
EP0481555B1 (de) | 1996-01-03 |
US5254863A (en) | 1993-10-19 |
EP0481555A1 (de) | 1992-04-22 |
GB2248966A (en) | 1992-04-22 |
JPH0831596B2 (ja) | 1996-03-27 |
GB9022756D0 (en) | 1990-12-05 |
DE69116076D1 (de) | 1996-02-15 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8327 | Change in the person/name/address of the patent owner |
Owner name: KONINKLIJKE PHILIPS ELECTRONICS N.V., EINDHOVEN, N |
|
8320 | Willingness to grant licences declared (paragraph 23) | ||
8339 | Ceased/non-payment of the annual fee |