DE69103867D1 - Optische Halbleitervorrichtungen mit PN-Strom sperrenden Schichten aus Materialien mit breitem Bandabstand. - Google Patents

Optische Halbleitervorrichtungen mit PN-Strom sperrenden Schichten aus Materialien mit breitem Bandabstand.

Info

Publication number
DE69103867D1
DE69103867D1 DE69103867T DE69103867T DE69103867D1 DE 69103867 D1 DE69103867 D1 DE 69103867D1 DE 69103867 T DE69103867 T DE 69103867T DE 69103867 T DE69103867 T DE 69103867T DE 69103867 D1 DE69103867 D1 DE 69103867D1
Authority
DE
Germany
Prior art keywords
materials
semiconductor devices
optical semiconductor
current blocking
layers made
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69103867T
Other languages
English (en)
Inventor
Michinori C O The Furu Irikawa
Masayuki C O The Furukaw Iwase
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Furukawa Electric Co Ltd
Original Assignee
Furukawa Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Furukawa Electric Co Ltd filed Critical Furukawa Electric Co Ltd
Application granted granted Critical
Publication of DE69103867D1 publication Critical patent/DE69103867D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/227—Buried mesa structure ; Striped active layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/227—Buried mesa structure ; Striped active layer
    • H01S5/2275—Buried mesa structure ; Striped active layer mesa created by etching

Landscapes

  • Physics & Mathematics (AREA)
  • Geometry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)
DE69103867T 1990-11-16 1991-11-18 Optische Halbleitervorrichtungen mit PN-Strom sperrenden Schichten aus Materialien mit breitem Bandabstand. Expired - Lifetime DE69103867D1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP31111990 1990-11-16
JP32648190 1990-11-28

Publications (1)

Publication Number Publication Date
DE69103867D1 true DE69103867D1 (de) 1994-10-13

Family

ID=26566590

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69103867T Expired - Lifetime DE69103867D1 (de) 1990-11-16 1991-11-18 Optische Halbleitervorrichtungen mit PN-Strom sperrenden Schichten aus Materialien mit breitem Bandabstand.

Country Status (4)

Country Link
US (1) US5214662A (de)
EP (1) EP0486327B1 (de)
JP (1) JPH0513882A (de)
DE (1) DE69103867D1 (de)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5319661A (en) * 1990-12-27 1994-06-07 The Furukawa Electric Co., Ltd. Semiconductor double heterostructure laser device with InP current blocking layer
US5383213A (en) * 1992-05-08 1995-01-17 The Furukawa Electric Co., Ltd. Semiconductor device with current confinement structure
JPH065975A (ja) * 1992-06-22 1994-01-14 Matsushita Electric Ind Co Ltd 半導体レーザ
US5568501A (en) * 1993-11-01 1996-10-22 Matsushita Electric Industrial Co., Ltd. Semiconductor laser and method for producing the same
EP1130724A1 (de) * 2000-03-03 2001-09-05 Alpes Lasers Quantenkaskadierter Laser und sein Herstellungsverfahren
US6664605B1 (en) * 2000-03-31 2003-12-16 Triquint Technology Holding Co. Dopant diffusion blocking for optoelectronic devices using InAlAs and/or InGaAlAs
JP4552549B2 (ja) * 2004-07-16 2010-09-29 住友電気工業株式会社 半導体光素子
JP4639107B2 (ja) * 2005-03-31 2011-02-23 富士通株式会社 半導体レーザ及びその製造方法
JP4792854B2 (ja) * 2005-07-25 2011-10-12 三菱電機株式会社 半導体光素子及びその製造方法
JP2009283822A (ja) * 2008-05-26 2009-12-03 Mitsubishi Electric Corp 半導体レーザ及びその製造方法
WO2020084687A1 (ja) * 2018-10-23 2020-04-30 三菱電機株式会社 半導体光集積素子

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4425650A (en) * 1980-04-15 1984-01-10 Nippon Electric Co., Ltd. Buried heterostructure laser diode
JPS60154689A (ja) * 1984-01-25 1985-08-14 Hitachi Ltd 発光素子およびこれを用いた光通信装置
JPH0766994B2 (ja) * 1985-02-19 1995-07-19 シャープ株式会社 半導体レーザ素子
US4841536A (en) * 1985-04-12 1989-06-20 Hitachi, Ltd. Semiconductor laser devices

Also Published As

Publication number Publication date
US5214662A (en) 1993-05-25
EP0486327B1 (de) 1994-09-07
EP0486327A3 (en) 1993-01-13
EP0486327A2 (de) 1992-05-20
JPH0513882A (ja) 1993-01-22

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