DE69033660D1 - Dünnfilmeinzelkristall aus lithiumniobat und verfahren zu seiner herstellung - Google Patents
Dünnfilmeinzelkristall aus lithiumniobat und verfahren zu seiner herstellungInfo
- Publication number
- DE69033660D1 DE69033660D1 DE69033660T DE69033660T DE69033660D1 DE 69033660 D1 DE69033660 D1 DE 69033660D1 DE 69033660 T DE69033660 T DE 69033660T DE 69033660 T DE69033660 T DE 69033660T DE 69033660 D1 DE69033660 D1 DE 69033660D1
- Authority
- DE
- Germany
- Prior art keywords
- production
- thin film
- single crystal
- lithium niobate
- film single
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B6/13—Integrated optical circuits characterised by the manufacturing method
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B19/00—Liquid-phase epitaxial-layer growth
- C30B19/02—Liquid-phase epitaxial-layer growth using molten solvents, e.g. flux
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B19/00—Liquid-phase epitaxial-layer growth
- C30B19/02—Liquid-phase epitaxial-layer growth using molten solvents, e.g. flux
- C30B19/04—Liquid-phase epitaxial-layer growth using molten solvents, e.g. flux the solvent being a component of the crystal composition
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/16—Oxides
- C30B29/22—Complex oxides
- C30B29/30—Niobates; Vanadates; Tantalates
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
- Y10S117/918—Single-crystal waveguide
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Organic Chemistry (AREA)
- Metallurgy (AREA)
- Materials Engineering (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Inorganic Chemistry (AREA)
- Optics & Photonics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Optical Integrated Circuits (AREA)
Applications Claiming Priority (6)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP24228589 | 1989-09-20 | ||
JP34235689 | 1989-12-29 | ||
JP34235589 | 1989-12-29 | ||
JP34235789A JP2838803B2 (ja) | 1989-09-20 | 1989-12-29 | ニオブ酸リチウム単結晶薄膜の製造方法 |
JP11214890 | 1990-04-26 | ||
PCT/JP1990/001207 WO1991004360A1 (en) | 1989-09-20 | 1990-09-20 | Thin film of lithium niobate single crystal and production thereof |
Publications (2)
Publication Number | Publication Date |
---|---|
DE69033660D1 true DE69033660D1 (de) | 2000-12-14 |
DE69033660T2 DE69033660T2 (de) | 2001-05-03 |
Family
ID=27526537
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69033660T Expired - Fee Related DE69033660T2 (de) | 1989-09-20 | 1990-09-20 | Dünnfilmeinzelkristall aus lithiumniobat und verfahren zu seiner herstellung |
Country Status (4)
Country | Link |
---|---|
US (1) | US5209917A (de) |
EP (1) | EP0444209B1 (de) |
DE (1) | DE69033660T2 (de) |
WO (1) | WO1991004360A1 (de) |
Families Citing this family (20)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3148896B2 (ja) * | 1990-11-30 | 2001-03-26 | イビデン株式会社 | ニオブ酸リチウム単結晶薄膜 |
US5747857A (en) * | 1991-03-13 | 1998-05-05 | Matsushita Electric Industrial Co., Ltd. | Electronic components having high-frequency elements and methods of manufacture therefor |
GB9127047D0 (en) * | 1991-12-20 | 1992-02-19 | Sandoz Ltd | Improvements in or relating to organic compounds |
JP3025982B2 (ja) * | 1992-01-21 | 2000-03-27 | イビデン株式会社 | 導波路型光方向性結合器 |
JP3261594B2 (ja) * | 1992-04-24 | 2002-03-04 | 日立金属株式会社 | タンタル酸リチウム単結晶、単結晶基板および光素子 |
JPH063546A (ja) * | 1992-06-18 | 1994-01-14 | Ibiden Co Ltd | シングルモード光導波路 |
US5347608A (en) * | 1992-06-30 | 1994-09-13 | Ibiden Co., Ltd. | Optical waveguide and optical waveguide device |
JP3479111B2 (ja) * | 1994-03-25 | 2003-12-15 | 日本碍子株式会社 | 電気光学品 |
JP3447796B2 (ja) * | 1994-03-25 | 2003-09-16 | 日本碍子株式会社 | 電気光学品の製造方法 |
JP3340856B2 (ja) * | 1994-03-25 | 2002-11-05 | 日本碍子株式会社 | 電気光学品及びその製造方法 |
US5650006A (en) * | 1994-09-16 | 1997-07-22 | Ngk Insulators, Ltd. | Process for producing a lithium niobate-lithium tantalate single crystal substrate |
JPH10194900A (ja) * | 1996-12-27 | 1998-07-28 | Ngk Insulators Ltd | 光学単結晶膜の製造方法、光学単結晶膜および光学部品 |
JPH11335199A (ja) * | 1998-05-27 | 1999-12-07 | Ngk Insulators Ltd | 単結晶膜の製造方法 |
US6673330B1 (en) * | 1999-03-26 | 2004-01-06 | National Institute For Research In Inorganic Materials | Single crystal of lithium niobate or tantalate and its optical element, and process and apparatus for producing an oxide single crystal |
US6544431B2 (en) | 2001-01-16 | 2003-04-08 | Triquint Technology Holding Co. | Thin film lithium niobate structure and method of making the same |
JP3911154B2 (ja) * | 2001-03-16 | 2007-05-09 | 日本碍子株式会社 | 接着体及びその製造方法 |
US6803028B2 (en) * | 2002-04-08 | 2004-10-12 | Corning Incorporated | Method of making stoichiometric lithium niobate |
US6885781B2 (en) * | 2002-05-03 | 2005-04-26 | Fujitsu Limited | Thin film electro-optical deflector device and a method of fabrication of such a device |
US7153487B2 (en) * | 2004-05-25 | 2006-12-26 | Crystal Technology, Inc. | Using condensed chemicals to precondition lithium niobate and lithium tantalate crystals |
JP6654435B2 (ja) * | 2016-01-07 | 2020-02-26 | 株式会社ディスコ | ウエーハ生成方法 |
Family Cites Families (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS519720B2 (de) * | 1973-12-18 | 1976-03-29 | ||
JPS519720A (ja) * | 1974-07-11 | 1976-01-26 | Ishihara Sangyo Kaisha | Josozai |
US4001076A (en) * | 1974-12-11 | 1977-01-04 | Gte Laboratories Incorporated | Method for growing thin epitaxial layers of a non-linear, optically active material |
US3998687A (en) * | 1975-03-10 | 1976-12-21 | Bell Telephone Laboratories, Incorporated | Technique for growth of thin film lithium niobate by liquid phase epitaxy |
US4093781A (en) | 1975-05-27 | 1978-06-06 | Rockwell International Corporation | Epitaxial, sodium-substituted lithium ferrite films |
JPS6034253B2 (ja) | 1976-05-21 | 1985-08-07 | 新技術開発事業団 | 液相エピタキシヤル成長方法 |
US4073675A (en) * | 1976-07-21 | 1978-02-14 | Bell Telephone Laboratories, Incorporated | Waveguiding epitaxial LiNbO3 films |
JPS6034722A (ja) | 1983-08-05 | 1985-02-22 | Nichinan Sangyo Kk | 搬送ミキサ−のセルフクリ−ニング方法とその装置 |
JPS63195198A (ja) * | 1987-02-09 | 1988-08-12 | Hitachi Ltd | ニオブ酸リチウム単結晶薄膜の製造方法 |
US4953931A (en) * | 1989-03-30 | 1990-09-04 | Ibiden Co., Ltd. | Second harmonic wave generating device |
-
1990
- 1990-09-20 DE DE69033660T patent/DE69033660T2/de not_active Expired - Fee Related
- 1990-09-20 WO PCT/JP1990/001207 patent/WO1991004360A1/ja active IP Right Grant
- 1990-09-20 EP EP90913862A patent/EP0444209B1/de not_active Expired - Lifetime
- 1990-09-20 US US07/700,169 patent/US5209917A/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
EP0444209A4 (en) | 1994-10-19 |
EP0444209B1 (de) | 2000-11-08 |
DE69033660T2 (de) | 2001-05-03 |
WO1991004360A1 (en) | 1991-04-04 |
EP0444209A1 (de) | 1991-09-04 |
US5209917A (en) | 1993-05-11 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8339 | Ceased/non-payment of the annual fee |