DE69033048D1 - System zur Positionsdetektion - Google Patents

System zur Positionsdetektion

Info

Publication number
DE69033048D1
DE69033048D1 DE69033048T DE69033048T DE69033048D1 DE 69033048 D1 DE69033048 D1 DE 69033048D1 DE 69033048 T DE69033048 T DE 69033048T DE 69033048 T DE69033048 T DE 69033048T DE 69033048 D1 DE69033048 D1 DE 69033048D1
Authority
DE
Germany
Prior art keywords
detection system
position detection
detection
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69033048T
Other languages
English (en)
Other versions
DE69033048T2 (de
Inventor
Masakazu Matsugu
Kenji Saitoh
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Inc
Original Assignee
Canon Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Canon Inc filed Critical Canon Inc
Application granted granted Critical
Publication of DE69033048D1 publication Critical patent/DE69033048D1/de
Publication of DE69033048T2 publication Critical patent/DE69033048T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/7035—Proximity or contact printers
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70691—Handling of masks or workpieces
    • G03F7/70775—Position control, e.g. interferometers or encoders for determining the stage position
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
    • G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
    • G03F9/7049—Technique, e.g. interferometric
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/304—Controlling tubes by information coming from the objects or from the beam, e.g. correction signals
    • H01J37/3045—Object or beam position registration
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3174—Particle-beam lithography, e.g. electron beam lithography

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Nanotechnology (AREA)
  • Analytical Chemistry (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Theoretical Computer Science (AREA)
  • Mathematical Physics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Length Measuring Devices By Optical Means (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
DE69033048T 1989-07-18 1990-07-17 System zur Positionsdetektion Expired - Fee Related DE69033048T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1186936A JP2704001B2 (ja) 1989-07-18 1989-07-18 位置検出装置

Publications (2)

Publication Number Publication Date
DE69033048D1 true DE69033048D1 (de) 1999-05-20
DE69033048T2 DE69033048T2 (de) 2000-04-06

Family

ID=16197312

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69033048T Expired - Fee Related DE69033048T2 (de) 1989-07-18 1990-07-17 System zur Positionsdetektion

Country Status (4)

Country Link
US (1) US5148036A (de)
EP (1) EP0409572B1 (de)
JP (1) JP2704001B2 (de)
DE (1) DE69033048T2 (de)

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JPH0624388B2 (ja) * 1986-06-13 1994-03-30 財団法人鉄道総合技術研究所 遠方監視制御装置の回線制御方法
GB9125603D0 (en) * 1991-12-02 1992-01-29 Gec-Marconi Limited Optical analysis system and positioning apparatus therefor
US5455679A (en) * 1993-02-22 1995-10-03 Canon Kabushiki Kaisha Position detecting system
US6126382A (en) * 1997-11-26 2000-10-03 Novellus Systems, Inc. Apparatus for aligning substrate to chuck in processing chamber
JP2000012455A (ja) * 1998-06-25 2000-01-14 Nikon Corp 荷電粒子線転写露光装置及び荷電粒子線転写露光装置におけるマスクと感応基板の位置合わせ方法
US6924937B2 (en) * 1998-11-16 2005-08-02 Canon Kabushiki Kaisha Aberration correcting optical system
EP1030222B1 (de) * 1999-02-18 2006-01-04 ASML Netherlands B.V. Lithographischer Projektionsapparat
JP4269393B2 (ja) * 1999-03-03 2009-05-27 株式会社ニコン アライメントマーク及びアライメント方法
US6873087B1 (en) 1999-10-29 2005-03-29 Board Of Regents, The University Of Texas System High precision orientation alignment and gap control stages for imprint lithography processes
EP2264522A3 (de) 2000-07-16 2011-12-14 The Board of Regents of The University of Texas System Verfahren zur Bildung einer Struktur auf einem Substrat
WO2002006902A2 (en) 2000-07-17 2002-01-24 Board Of Regents, The University Of Texas System Method and system of automatic fluid dispensing for imprint lithography processes
WO2002010721A2 (en) * 2000-08-01 2002-02-07 Board Of Regents, The University Of Texas System Methods for high-precision gap and orientation sensing between a transparent template and substrate for imprint lithography
WO2002017383A2 (en) 2000-08-21 2002-02-28 Board Of Regents, The University Of Texas System Flexure based translation stage
CN100365507C (zh) * 2000-10-12 2008-01-30 德克萨斯州大学***董事会 用于室温下低压微刻痕和毫微刻痕光刻的模板
US6964793B2 (en) 2002-05-16 2005-11-15 Board Of Regents, The University Of Texas System Method for fabricating nanoscale patterns in light curable compositions using an electric field
US20050064344A1 (en) * 2003-09-18 2005-03-24 University Of Texas System Board Of Regents Imprint lithography templates having alignment marks
US7037639B2 (en) 2002-05-01 2006-05-02 Molecular Imprints, Inc. Methods of manufacturing a lithography template
CH695914A5 (de) * 2002-05-17 2006-10-13 Hera Rotterdam Bv Vorrichtung und Verfahren zur optischen Erfassung von Gegenständen.
US6926929B2 (en) 2002-07-09 2005-08-09 Molecular Imprints, Inc. System and method for dispensing liquids
US6908861B2 (en) * 2002-07-11 2005-06-21 Molecular Imprints, Inc. Method for imprint lithography using an electric field
US6900881B2 (en) 2002-07-11 2005-05-31 Molecular Imprints, Inc. Step and repeat imprint lithography systems
MY144124A (en) * 2002-07-11 2011-08-15 Molecular Imprints Inc Step and repeat imprint lithography systems
US7019819B2 (en) 2002-11-13 2006-03-28 Molecular Imprints, Inc. Chucking system for modulating shapes of substrates
US6932934B2 (en) 2002-07-11 2005-08-23 Molecular Imprints, Inc. Formation of discontinuous films during an imprint lithography process
US7077992B2 (en) 2002-07-11 2006-07-18 Molecular Imprints, Inc. Step and repeat imprint lithography processes
US7070405B2 (en) 2002-08-01 2006-07-04 Molecular Imprints, Inc. Alignment systems for imprint lithography
US7027156B2 (en) * 2002-08-01 2006-04-11 Molecular Imprints, Inc. Scatterometry alignment for imprint lithography
JP2006516065A (ja) * 2002-08-01 2006-06-15 モレキュラー・インプリンツ・インコーポレーテッド インプリント・リソグラフィの散乱計測アラインメント
US6916584B2 (en) 2002-08-01 2005-07-12 Molecular Imprints, Inc. Alignment methods for imprint lithography
US7071088B2 (en) 2002-08-23 2006-07-04 Molecular Imprints, Inc. Method for fabricating bulbous-shaped vias
US8349241B2 (en) 2002-10-04 2013-01-08 Molecular Imprints, Inc. Method to arrange features on a substrate to replicate features having minimal dimensional variability
US6980282B2 (en) * 2002-12-11 2005-12-27 Molecular Imprints, Inc. Method for modulating shapes of substrates
US6929762B2 (en) 2002-11-13 2005-08-16 Molecular Imprints, Inc. Method of reducing pattern distortions during imprint lithography processes
US6871558B2 (en) * 2002-12-12 2005-03-29 Molecular Imprints, Inc. Method for determining characteristics of substrate employing fluid geometries
JP4563181B2 (ja) * 2002-12-13 2010-10-13 モレキュラー・インプリンツ・インコーポレーテッド 基板の面曲がりを使用する倍率補正
US7452574B2 (en) 2003-02-27 2008-11-18 Molecular Imprints, Inc. Method to reduce adhesion between a polymerizable layer and a substrate employing a fluorine-containing layer
US7122079B2 (en) 2004-02-27 2006-10-17 Molecular Imprints, Inc. Composition for an etching mask comprising a silicon-containing material
US7179396B2 (en) 2003-03-25 2007-02-20 Molecular Imprints, Inc. Positive tone bi-layer imprint lithography method
US7396475B2 (en) 2003-04-25 2008-07-08 Molecular Imprints, Inc. Method of forming stepped structures employing imprint lithography
US7157036B2 (en) 2003-06-17 2007-01-02 Molecular Imprints, Inc Method to reduce adhesion between a conformable region and a pattern of a mold
US7150622B2 (en) * 2003-07-09 2006-12-19 Molecular Imprints, Inc. Systems for magnification and distortion correction for imprint lithography processes
US7136150B2 (en) 2003-09-25 2006-11-14 Molecular Imprints, Inc. Imprint lithography template having opaque alignment marks
US8211214B2 (en) 2003-10-02 2012-07-03 Molecular Imprints, Inc. Single phase fluid imprint lithography method
US7090716B2 (en) 2003-10-02 2006-08-15 Molecular Imprints, Inc. Single phase fluid imprint lithography method
US8076386B2 (en) 2004-02-23 2011-12-13 Molecular Imprints, Inc. Materials for imprint lithography
US7906180B2 (en) 2004-02-27 2011-03-15 Molecular Imprints, Inc. Composition for an etching mask comprising a silicon-containing material
US20050270516A1 (en) * 2004-06-03 2005-12-08 Molecular Imprints, Inc. System for magnification and distortion correction during nano-scale manufacturing
CN101379435A (zh) * 2004-06-03 2009-03-04 得克萨斯州大学***董事会 用于改进显微蚀刻的对齐和覆盖的***和方法
US7768624B2 (en) * 2004-06-03 2010-08-03 Board Of Regents, The University Of Texas System Method for obtaining force combinations for template deformation using nullspace and methods optimization techniques
US7785526B2 (en) * 2004-07-20 2010-08-31 Molecular Imprints, Inc. Imprint alignment method, system, and template
JP4637684B2 (ja) * 2004-09-10 2011-02-23 株式会社日立ハイテクノロジーズ 荷電粒子線応用装置
US20070231421A1 (en) * 2006-04-03 2007-10-04 Molecular Imprints, Inc. Enhanced Multi Channel Alignment
US7292326B2 (en) * 2004-11-30 2007-11-06 Molecular Imprints, Inc. Interferometric analysis for the manufacture of nano-scale devices
US7630067B2 (en) 2004-11-30 2009-12-08 Molecular Imprints, Inc. Interferometric analysis method for the manufacture of nano-scale devices
JP5198071B2 (ja) * 2004-12-01 2013-05-15 モレキュラー・インプリンツ・インコーポレーテッド インプリントリソグラフィ・プロセスにおける熱管理のための露光方法
US20070228608A1 (en) * 2006-04-03 2007-10-04 Molecular Imprints, Inc. Preserving Filled Features when Vacuum Wiping
WO2007117524A2 (en) 2006-04-03 2007-10-18 Molecular Imprints, Inc. Method of concurrently patterning a substrate having a plurality of fields and alignment marks
JP5027468B2 (ja) * 2006-09-15 2012-09-19 日本ミクロコーティング株式会社 プローブクリーニング用又はプローブ加工用シート、及びプローブ加工方法
US8710629B2 (en) * 2009-12-17 2014-04-29 Qualcomm Incorporated Apparatus and method for controlling semiconductor die warpage
EP2615425B1 (de) * 2012-01-13 2018-03-07 CSEM Centre Suisse d'Electronique et de Microtechnique SA - Recherche et Développement Messsystem für einen optischen Berührungsauslöser oder eine Abtastsonde mit Konkavspiegel
NL2016625A (en) * 2015-04-20 2016-10-24 Asml Netherlands Bv Lithographic Method and Apparatus.
JP2021089963A (ja) * 2019-12-04 2021-06-10 キヤノン株式会社 搬送装置、露光装置及び物品の製造方法
CN113375579B (zh) * 2021-06-25 2022-08-23 上海工程技术大学 一种栅极组件栅极面间距检测方法及检测平台

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US4037969A (en) * 1976-04-02 1977-07-26 Bell Telephone Laboratories, Incorporated Zone plate alignment marks
FR2436967A1 (fr) * 1978-09-19 1980-04-18 Thomson Csf Procede d'alignement optique de motifs dans deux plans rapproches et dispositif d'alignement mettant en oeuvre un tel procede
US4360273A (en) * 1980-02-14 1982-11-23 Sperry Corporation Optical alignment of masks for X-ray lithography
US4326805A (en) * 1980-04-11 1982-04-27 Bell Telephone Laboratories, Incorporated Method and apparatus for aligning mask and wafer members
US4398824A (en) * 1981-04-15 1983-08-16 Bell Telephone Laboratories, Incorporated Wafer tilt compensation in zone plate alignment system
US4650983A (en) * 1983-11-07 1987-03-17 Nippon Kogaku K. K. Focusing apparatus for projection optical system
DE3719538A1 (de) * 1986-06-11 1987-12-17 Toshiba Kawasaki Kk Verfahren und vorrichtung zum einstellen eines spalts zwischen zwei objekten auf eine vorbestimmte groesse
KR900004269B1 (ko) * 1986-06-11 1990-06-18 가부시기가이샤 도시바 제 1물체와 제 2 물체와의 위치 맞추는 방법 및 장치
US4815854A (en) * 1987-01-19 1989-03-28 Nec Corporation Method of alignment between mask and semiconductor wafer
JPH01285803A (ja) * 1988-05-13 1989-11-16 Fujitsu Ltd フレネル・ゾーン・プレートおよびそれを用いる位置合せ方法
JP2734004B2 (ja) * 1988-09-30 1998-03-30 キヤノン株式会社 位置合わせ装置

Also Published As

Publication number Publication date
DE69033048T2 (de) 2000-04-06
EP0409572B1 (de) 1999-04-14
JP2704001B2 (ja) 1998-01-26
US5148036A (en) 1992-09-15
JPH0348705A (ja) 1991-03-01
EP0409572A3 (en) 1991-11-27
EP0409572A2 (de) 1991-01-23

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Legal Events

Date Code Title Description
8332 No legal effect for de
8370 Indication of lapse of patent is to be deleted
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee