DE69026468D1 - Anpassungsfähige Gate-Entladeschaltung für Leistungs-Fets - Google Patents
Anpassungsfähige Gate-Entladeschaltung für Leistungs-FetsInfo
- Publication number
- DE69026468D1 DE69026468D1 DE69026468T DE69026468T DE69026468D1 DE 69026468 D1 DE69026468 D1 DE 69026468D1 DE 69026468 T DE69026468 T DE 69026468T DE 69026468 T DE69026468 T DE 69026468T DE 69026468 D1 DE69026468 D1 DE 69026468D1
- Authority
- DE
- Germany
- Prior art keywords
- adaptable
- discharge circuit
- power fets
- gate discharge
- gate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
- H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
- H03K17/687—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
- H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
- H03K17/687—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors
- H03K17/6877—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors the control circuit comprising active elements different from those used in the output circuit
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/06—Modifications for ensuring a fully conducting state
- H03K17/063—Modifications for ensuring a fully conducting state in field-effect transistor switches
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US07/433,366 US5017816A (en) | 1989-11-08 | 1989-11-08 | Adaptive gate discharge circuit for power FETS |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| DE69026468D1 true DE69026468D1 (de) | 1996-05-15 |
| DE69026468T2 DE69026468T2 (de) | 1996-11-28 |
Family
ID=23719907
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE69026468T Expired - Fee Related DE69026468T2 (de) | 1989-11-08 | 1990-10-30 | Anpassungsfähige Gate-Entladeschaltung für Leistungs-Fets |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US5017816A (de) |
| EP (1) | EP0427086B1 (de) |
| JP (1) | JPH03172017A (de) |
| KR (1) | KR0177146B1 (de) |
| DE (1) | DE69026468T2 (de) |
Families Citing this family (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE59009841D1 (de) * | 1990-11-09 | 1995-12-07 | Siemens Ag | MOSFET-Schalter für eine induktive Last. |
| ES2112895T3 (es) * | 1992-06-16 | 1998-04-16 | Sgs Thomson Microelectronics | Circuito para controlar la corriente maxima en un transistor mos de potencia utilizado para excitar una carga conectada a tierra. |
| EP0608667B1 (de) * | 1993-01-29 | 1996-08-21 | STMicroelectronics S.r.l. | Treiberschaltung für einen Feldeffekttransistor in einer Halbbrückenausgangsstufe |
| DE69315980T2 (de) * | 1993-04-09 | 1998-04-16 | Cons Ric Microelettronica | Steuerschaltung mit keinem Vorspannungsstrom für einen Low-Side-Treiber |
| EP0620644B1 (de) * | 1993-04-09 | 1998-06-24 | STMicroelectronics S.r.l. | Steuerung, Verringerung und Angleichen der Verzögerungszeiten in einer Low-Side-Treiberstufe |
| US6407594B1 (en) | 1993-04-09 | 2002-06-18 | Sgs-Thomson Microelectronics S.R.L. | Zero bias current driver control circuit |
| DE4325899C2 (de) * | 1993-08-02 | 1995-11-16 | Siemens Ag | MOS-Schaltstufe |
| EP0684699B1 (de) * | 1994-05-25 | 2001-10-24 | STMicroelectronics S.r.l. | Anstiegszeitsteuerung und Optimierung des Leistungsverbrauchs in einer Leistungsstufe |
| US5453712A (en) * | 1995-01-25 | 1995-09-26 | Honeywell Inc. | Circuit for accurately discharging a capacitor |
| JP3633522B2 (ja) * | 2001-07-27 | 2005-03-30 | 株式会社デンソー | 負荷駆動回路 |
| KR20150029866A (ko) * | 2013-09-11 | 2015-03-19 | 현대자동차주식회사 | 소프트 턴-오프 회로 및 방법 |
| CN108631761A (zh) * | 2017-03-16 | 2018-10-09 | 佛山市顺德区美的电热电器制造有限公司 | 电磁加热***以及功率开关管的控制装置和方法 |
| JP7199325B2 (ja) | 2019-09-02 | 2023-01-05 | 株式会社東芝 | スイッチ回路 |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE3018501A1 (de) * | 1980-05-14 | 1981-11-19 | Siemens AG, 1000 Berlin und 8000 München | Schalter mit einem als source-folger betriebenen mis-pet |
| US4481434A (en) * | 1982-06-21 | 1984-11-06 | Eaton Corporation | Self regenerative fast gate turn-off FET |
| DE3712998A1 (de) * | 1987-04-16 | 1988-11-03 | Ant Nachrichtentech | Komplementaertransistorstufe zur ansteuerung kapazitiver lasten sowie verwendung |
| US4877982A (en) * | 1989-01-23 | 1989-10-31 | Honeywell Inc. | MOSFET turn-on/off circuit |
-
1989
- 1989-11-08 US US07/433,366 patent/US5017816A/en not_active Expired - Lifetime
-
1990
- 1990-10-30 DE DE69026468T patent/DE69026468T2/de not_active Expired - Fee Related
- 1990-10-30 EP EP90120764A patent/EP0427086B1/de not_active Expired - Lifetime
- 1990-11-06 KR KR1019900017896A patent/KR0177146B1/ko not_active IP Right Cessation
- 1990-11-08 JP JP2301230A patent/JPH03172017A/ja active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| KR910010869A (ko) | 1991-06-29 |
| EP0427086A3 (en) | 1991-12-18 |
| EP0427086B1 (de) | 1996-04-10 |
| KR0177146B1 (ko) | 1999-04-01 |
| JPH03172017A (ja) | 1991-07-25 |
| DE69026468T2 (de) | 1996-11-28 |
| EP0427086A2 (de) | 1991-05-15 |
| US5017816A (en) | 1991-05-21 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| DE59306387D1 (de) | Schaltungsanordnung für Leistungshalbleiterbauelemente | |
| DE68911580D1 (de) | Leistungserhöhungsschaltung für Fortsetzung. | |
| DE69307248D1 (de) | Integrierte Schaltung für Microwellen | |
| DE3582640D1 (de) | Verzoegerungsschaltung fuer lsi-toranordnung. | |
| DE69011189D1 (de) | Treiber für Hochvolt-Halbbrücken-Schaltkreise. | |
| DE68918156D1 (de) | Flache Kühlungsstruktur für integrierte Schaltung. | |
| DE69032496D1 (de) | Leistungshalbleiteranordnung | |
| DE69026195D1 (de) | Anpassungsfähige Gate-Ladeschaltung für Leistungs-Fets | |
| DE69013310D1 (de) | Gehäuse für Leistungshalbleiterbauelemente. | |
| DE69026468D1 (de) | Anpassungsfähige Gate-Entladeschaltung für Leistungs-Fets | |
| DE69210224D1 (de) | Schutzschaltung für Leistungstransistor | |
| DE69512467D1 (de) | Gate-Treiberschaltung für eine Leistungsschaltanordnung | |
| DE69029424D1 (de) | Unmittelbar wirkende Leistungsbegrenzungsschaltung | |
| ATE106630T1 (de) | Speiseschaltung. | |
| DE69306512D1 (de) | Speisespannungsschaltung für Gatesteuerstufe | |
| GB8921758D0 (en) | Quasi-constant gate drive circuit | |
| DE69025278D1 (de) | Stromdetektionsschaltung für MOS-Leistungstransistor | |
| DE58903008D1 (de) | Gate-source-schutzschaltung fuer einen leistungs-mosfet. | |
| DE3364452D1 (de) | Fet circuits | |
| DE69626704D1 (de) | Halbleiterhochspannungskurzschlussschaltung | |
| DE3465831D1 (de) | Polysilicon fets | |
| KR890001526U (ko) | 전력용 기중 차단기의 작동장치 | |
| KR910013209U (ko) | 파워 트랜지스터 구동회로 | |
| KR900017760U (ko) | 전원단락용 매칭 릴레이 구동 회로 | |
| KR910003522U (ko) | 인버터 전력트랜지스터 구동회로 |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| 8364 | No opposition during term of opposition | ||
| 8339 | Ceased/non-payment of the annual fee |