DE69025994D1 - Verfahren zur Herstellung eines Halbleitersubstrats - Google Patents

Verfahren zur Herstellung eines Halbleitersubstrats

Info

Publication number
DE69025994D1
DE69025994D1 DE69025994T DE69025994T DE69025994D1 DE 69025994 D1 DE69025994 D1 DE 69025994D1 DE 69025994 T DE69025994 T DE 69025994T DE 69025994 T DE69025994 T DE 69025994T DE 69025994 D1 DE69025994 D1 DE 69025994D1
Authority
DE
Germany
Prior art keywords
manufacturing
semiconductor substrate
semiconductor
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69025994T
Other languages
English (en)
Other versions
DE69025994T2 (de
Inventor
Kenetake Takasaki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Application granted granted Critical
Publication of DE69025994D1 publication Critical patent/DE69025994D1/de
Publication of DE69025994T2 publication Critical patent/DE69025994T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
    • H01L21/3245—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering of AIIIBV compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02373—Group 14 semiconducting materials
    • H01L21/02381—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02538—Group 13/15 materials
    • H01L21/02546—Arsenides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02656—Special treatments
    • H01L21/02664—Aftertreatments

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Recrystallisation Techniques (AREA)
  • Formation Of Insulating Films (AREA)
DE1990625994 1989-05-18 1990-05-17 Verfahren zur Herstellung eines Halbleitersubstrats Expired - Lifetime DE69025994T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP12510489A JP2797425B2 (ja) 1989-05-18 1989-05-18 半導体結晶成長方法

Publications (2)

Publication Number Publication Date
DE69025994D1 true DE69025994D1 (de) 1996-04-25
DE69025994T2 DE69025994T2 (de) 1996-08-08

Family

ID=14901949

Family Applications (1)

Application Number Title Priority Date Filing Date
DE1990625994 Expired - Lifetime DE69025994T2 (de) 1989-05-18 1990-05-17 Verfahren zur Herstellung eines Halbleitersubstrats

Country Status (3)

Country Link
EP (1) EP0407233B1 (de)
JP (1) JP2797425B2 (de)
DE (1) DE69025994T2 (de)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE19952015A1 (de) * 1999-10-28 2001-05-17 Steag Rtp Systems Gmbh Verfahren zum thermischen Behandeln von Objekten
EP2325871B1 (de) 2006-02-07 2014-06-04 Fujitsu Limited Halbleiterbauelement und Verfahren zu dessen Herstellung
US8389999B2 (en) 2009-09-28 2013-03-05 Massachusetts Institute Of Technology Method to reduce dislocation density in silicon using stress
EP2693462B1 (de) 2012-07-31 2016-06-01 Imec Herstellungsverfahren für Halbleitervorrichtungen
US9553153B1 (en) 2015-12-02 2017-01-24 International Business Machines Corporation Post growth defect reduction for heteroepitaxial materials

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4632712A (en) * 1983-09-12 1986-12-30 Massachusetts Institute Of Technology Reducing dislocations in semiconductors utilizing repeated thermal cycling during multistage epitaxial growth

Also Published As

Publication number Publication date
EP0407233B1 (de) 1996-03-20
JPH02303118A (ja) 1990-12-17
DE69025994T2 (de) 1996-08-08
EP0407233A1 (de) 1991-01-09
JP2797425B2 (ja) 1998-09-17

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition