DE69011921D1 - Halbleiterlaser mit veränderbarer Emissionswellenlänge und selektives Wellenlängenfitter und Verfahren zum Betrieb derselben. - Google Patents

Halbleiterlaser mit veränderbarer Emissionswellenlänge und selektives Wellenlängenfitter und Verfahren zum Betrieb derselben.

Info

Publication number
DE69011921D1
DE69011921D1 DE69011921T DE69011921T DE69011921D1 DE 69011921 D1 DE69011921 D1 DE 69011921D1 DE 69011921 T DE69011921 T DE 69011921T DE 69011921 T DE69011921 T DE 69011921T DE 69011921 D1 DE69011921 D1 DE 69011921D1
Authority
DE
Germany
Prior art keywords
wavelength
fitter
operating
semiconductor laser
same
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69011921T
Other languages
English (en)
Other versions
DE69011921T2 (de
Inventor
Takeo Ono
Hajime Sakata
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Inc
Original Assignee
Canon Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP1083928A external-priority patent/JP2703619B2/ja
Priority claimed from JP1180396A external-priority patent/JP2854330B2/ja
Priority claimed from JP18458089A external-priority patent/JP2788760B2/ja
Application filed by Canon Inc filed Critical Canon Inc
Publication of DE69011921D1 publication Critical patent/DE69011921D1/de
Application granted granted Critical
Publication of DE69011921T2 publication Critical patent/DE69011921T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/062—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes
    • H01S5/0625—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes in multi-section lasers
    • H01S5/06255—Controlling the frequency of the radiation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/062—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes
    • H01S5/0625—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes in multi-section lasers
    • H01S5/06255—Controlling the frequency of the radiation
    • H01S5/06256—Controlling the frequency of the radiation with DBR-structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/062—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes
    • H01S5/0625—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes in multi-section lasers
    • H01S5/06255—Controlling the frequency of the radiation
    • H01S5/06258—Controlling the frequency of the radiation with DFB-structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/50—Amplifier structures not provided for in groups H01S5/02 - H01S5/30
    • H01S5/5045—Amplifier structures not provided for in groups H01S5/02 - H01S5/30 the arrangement having a frequency filtering function

Landscapes

  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Nanotechnology (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Biophysics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Semiconductor Lasers (AREA)
DE69011921T 1989-04-04 1990-04-03 Halbleiterlaser mit veränderbarer Emissionswellenlänge und selektives Wellenlängenfitter und Verfahren zum Betrieb derselben. Expired - Fee Related DE69011921T2 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP1083928A JP2703619B2 (ja) 1989-04-04 1989-04-04 波長可変半導体レーザ
JP1180396A JP2854330B2 (ja) 1989-07-14 1989-07-14 波長可変光フィルタ
JP18458089A JP2788760B2 (ja) 1989-07-19 1989-07-19 選択波長可変フィルタ

Publications (2)

Publication Number Publication Date
DE69011921D1 true DE69011921D1 (de) 1994-10-06
DE69011921T2 DE69011921T2 (de) 1995-03-02

Family

ID=27304372

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69011921T Expired - Fee Related DE69011921T2 (de) 1989-04-04 1990-04-03 Halbleiterlaser mit veränderbarer Emissionswellenlänge und selektives Wellenlängenfitter und Verfahren zum Betrieb derselben.

Country Status (3)

Country Link
US (1) US5155736A (de)
EP (1) EP0391334B1 (de)
DE (1) DE69011921T2 (de)

Families Citing this family (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5325392A (en) * 1992-03-06 1994-06-28 Nippon Telegraph And Telephone Corporation Distributed reflector and wavelength-tunable semiconductor laser
CA2101411C (en) * 1992-08-14 2003-06-10 Jean-Pierre Weber Tunable optical filter
SE470454B (sv) * 1992-08-26 1994-04-11 Ericsson Telefon Ab L M Optisk filteranordning
JP3086767B2 (ja) * 1993-05-31 2000-09-11 株式会社東芝 レ−ザ素子
JPH0738204A (ja) * 1993-07-20 1995-02-07 Mitsubishi Electric Corp 半導体光デバイス及びその製造方法
FR2737942B1 (fr) * 1995-08-18 1997-11-07 Delorme Franck Composant d'emission laser accordable en longueur d'onde par variation d'absorption
US6198814B1 (en) 1997-10-17 2001-03-06 Debra Ann Marie Gill System and method for entering call outcome records in a computer database in an outbound predictive dialing application
EP1218973A4 (de) * 1999-09-03 2005-11-16 Univ California Abstimmbare laser-quelle mit integriertem optischen modulator
JP4989834B2 (ja) * 2000-05-04 2012-08-01 ジェイディーエス ユニフェイズ コーポレイション サンプル格子分布型ブラッグ反射レーザー用のミラー及び空洞設計の改良
US7061943B2 (en) * 2000-06-29 2006-06-13 Agility Communications, Inc. Controller calibration for small form factor sampled grating distributed Bragg reflector laser
US6728290B1 (en) * 2000-09-13 2004-04-27 The Board Of Trustees Of The University Of Illinois Current biased dual DBR grating semiconductor laser
JP2002094176A (ja) * 2000-09-14 2002-03-29 Mitsubishi Electric Corp レーザ装置
GB2373632B (en) * 2001-03-19 2005-04-27 Marconi Caswell Ltd Tuneable laser
US6954476B2 (en) * 2001-05-15 2005-10-11 Agility Communications, Inc. Sampled grating distributed Bragg reflector laser controller
GB2381123B (en) * 2001-10-17 2005-02-23 Marconi Optical Components Ltd Tuneable laser
JP4104925B2 (ja) * 2002-07-10 2008-06-18 三菱電機株式会社 波長可変半導体レーザの波長制御装置
US7295589B2 (en) * 2003-02-15 2007-11-13 Avago Technologies Fiber (Singapore) Pte Ltd Frequency modulated vertical cavity laser
JP2013168500A (ja) * 2012-02-15 2013-08-29 Mitsubishi Electric Corp 光半導体装置
JP2018182306A (ja) * 2017-04-17 2018-11-15 浜松ホトニクス株式会社 光半導体素子、及び光半導体素子の駆動方法
KR102368946B1 (ko) * 2017-12-15 2022-03-04 한국전자통신연구원 파장 가변 레이저 장치 및 이를 제조하는 방법
KR102495786B1 (ko) * 2019-01-04 2023-02-06 후아웨이 테크놀러지 컴퍼니 리미티드 반도체 레이저, 광 전송기 컴포넌트, 광 회선 단말 및 광 네트워크 유닛

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60133777A (ja) * 1983-12-22 1985-07-16 Nippon Telegr & Teleph Corp <Ntt> 半導体発光装置
JPH0632332B2 (ja) * 1984-08-24 1994-04-27 日本電気株式会社 半導体レ−ザ装置
JPH0719928B2 (ja) * 1986-11-26 1995-03-06 日本電気株式会社 光フイルタ素子
JPS63150986A (ja) * 1986-12-15 1988-06-23 Sharp Corp 半導体レ−ザ
JPH0656908B2 (ja) * 1987-03-31 1994-07-27 日本電信電話株式会社 波長変換素子
JP2659187B2 (ja) * 1987-04-14 1997-09-30 日本電気株式会社 光フィルタ素子
JPS63299291A (ja) * 1987-05-29 1988-12-06 Kokusai Denshin Denwa Co Ltd <Kdd> 半導体レ−ザ
JPH0831653B2 (ja) * 1987-07-21 1996-03-27 国際電信電話株式会社 半導体レ−ザ
JP2749038B2 (ja) * 1987-07-31 1998-05-13 株式会社日立製作所 波長可変半導体レーザ
JPH0626268B2 (ja) * 1987-08-19 1994-04-06 日本電気株式会社 波長可変半導体レ−ザ
JP2825508B2 (ja) * 1987-10-09 1998-11-18 株式会社日立製作所 半導体レーザ装置および光通信システム
JPH084186B2 (ja) * 1987-10-28 1996-01-17 国際電信電話株式会社 半導体レーザ

Also Published As

Publication number Publication date
EP0391334A2 (de) 1990-10-10
EP0391334B1 (de) 1994-08-31
EP0391334A3 (de) 1991-08-28
DE69011921T2 (de) 1995-03-02
US5155736A (en) 1992-10-13

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Legal Events

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8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee