DE68922734T2 - VERFAHREN ZUR HERSTELLUNG EINES DüNNSCHICHTOXYDSUPRALEITERS. - Google Patents

VERFAHREN ZUR HERSTELLUNG EINES DüNNSCHICHTOXYDSUPRALEITERS.

Info

Publication number
DE68922734T2
DE68922734T2 DE68922734T DE68922734T DE68922734T2 DE 68922734 T2 DE68922734 T2 DE 68922734T2 DE 68922734 T DE68922734 T DE 68922734T DE 68922734 T DE68922734 T DE 68922734T DE 68922734 T2 DE68922734 T2 DE 68922734T2
Authority
DE
Germany
Prior art keywords
thin
producing
layer oxide
oxide super
super ladder
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Revoked
Application number
DE68922734T
Other languages
English (en)
Other versions
DE68922734D1 (de
Inventor
Etsuo Noda
Setsuo - - - Suzuki
Osami Morimiya
Kazuo Hayashi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Family has litigation
First worldwide family litigation filed litigation Critical https://patents.darts-ip.com/?family=13138402&utm_source=***_patent&utm_medium=platform_link&utm_campaign=public_patent_search&patent=DE68922734(T2) "Global patent litigation dataset” by Darts-ip is licensed under a Creative Commons Attribution 4.0 International License.
Application filed by Toshiba Corp filed Critical Toshiba Corp
Publication of DE68922734D1 publication Critical patent/DE68922734D1/de
Application granted granted Critical
Publication of DE68922734T2 publication Critical patent/DE68922734T2/de
Anticipated expiration legal-status Critical
Revoked legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N60/00—Superconducting devices
    • H10N60/01—Manufacture or treatment
    • H10N60/0268—Manufacture or treatment of devices comprising copper oxide
    • H10N60/0296—Processes for depositing or forming superconductor layers
    • H10N60/0521—Processes for depositing or forming superconductor layers by pulsed laser deposition, e.g. laser sputtering; laser ablation
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/0021—Reactive sputtering or evaporation
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/08—Oxides
    • C23C14/087—Oxides of copper or solid solutions thereof
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/40—Oxides
    • C23C16/408—Oxides of copper or solid solutions thereof
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S505/00—Superconductor technology: apparatus, material, process
    • Y10S505/725—Process of making or treating high tc, above 30 k, superconducting shaped material, article, or device
    • Y10S505/729—Growing single crystal, e.g. epitaxy, bulk
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S505/00—Superconductor technology: apparatus, material, process
    • Y10S505/725—Process of making or treating high tc, above 30 k, superconducting shaped material, article, or device
    • Y10S505/73—Vacuum treating or coating
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S505/00—Superconductor technology: apparatus, material, process
    • Y10S505/725—Process of making or treating high tc, above 30 k, superconducting shaped material, article, or device
    • Y10S505/73—Vacuum treating or coating
    • Y10S505/731—Sputter coating
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S505/00—Superconductor technology: apparatus, material, process
    • Y10S505/725—Process of making or treating high tc, above 30 k, superconducting shaped material, article, or device
    • Y10S505/73—Vacuum treating or coating
    • Y10S505/732—Evaporative coating with superconducting material
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S505/00—Superconductor technology: apparatus, material, process
    • Y10S505/725—Process of making or treating high tc, above 30 k, superconducting shaped material, article, or device
    • Y10S505/734—From organometallic precursors, e.g. acetylacetonates
DE68922734T 1988-03-16 1989-03-15 VERFAHREN ZUR HERSTELLUNG EINES DüNNSCHICHTOXYDSUPRALEITERS. Revoked DE68922734T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP6030888 1988-03-16
PCT/JP1989/000277 WO1989008605A1 (en) 1988-03-16 1989-03-15 Process for producing thin-film oxide superconductor

Publications (2)

Publication Number Publication Date
DE68922734D1 DE68922734D1 (de) 1995-06-22
DE68922734T2 true DE68922734T2 (de) 1995-09-14

Family

ID=13138402

Family Applications (1)

Application Number Title Priority Date Filing Date
DE68922734T Revoked DE68922734T2 (de) 1988-03-16 1989-03-15 VERFAHREN ZUR HERSTELLUNG EINES DüNNSCHICHTOXYDSUPRALEITERS.

Country Status (4)

Country Link
US (3) US5158931A (de)
EP (1) EP0431160B1 (de)
DE (1) DE68922734T2 (de)
WO (1) WO1989008605A1 (de)

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ATE124574T1 (de) * 1989-04-10 1995-07-15 Imec Inter Uni Micro Electr Verfahren zum aufbringen einer schicht aus supraleitenden materialien und geeignete anordnung.
JPH02310363A (ja) * 1989-05-24 1990-12-26 Mitsubishi Electric Corp レーザ蒸着装置
US5260267A (en) * 1989-07-24 1993-11-09 Sumitomo Electric Industries, Ltd. Method for forming a Bi-containing superconducting oxide film on a substrate with a buffer layer of Bi2 O3
US5571169A (en) 1993-06-07 1996-11-05 Endovascular Instruments, Inc. Anti-stenotic method and product for occluded and partially occluded arteries
CA2092530A1 (en) * 1990-10-16 1992-04-17 Timothy W. James In situ growth of superconducting films
US5779802A (en) * 1990-12-10 1998-07-14 Imec V.Z.W. Thin film deposition chamber with ECR-plasma source
CN1037793C (zh) * 1992-01-28 1998-03-18 华中理工大学 激光沉积大面积超导膜的方法及其装置
JPH05302163A (ja) * 1992-04-27 1993-11-16 Sumitomo Electric Ind Ltd 複合酸化物超電導薄膜の成膜方法
DE4229399C2 (de) * 1992-09-03 1999-05-27 Deutsch Zentr Luft & Raumfahrt Verfahren und Vorrichtung zum Herstellen einer Funktionsstruktur eines Halbleiterbauelements
JP3255469B2 (ja) * 1992-11-30 2002-02-12 三菱電機株式会社 レーザ薄膜形成装置
GB2300426B (en) * 1992-11-30 1997-05-28 Mitsubishi Electric Corp Thin film forming apparatus using laser
US5733609A (en) * 1993-06-01 1998-03-31 Wang; Liang Ceramic coatings synthesized by chemical reactions energized by laser plasmas
AU8070294A (en) * 1993-07-15 1995-02-13 President And Fellows Of Harvard College Extended nitride material comprising beta -c3n4
KR0168699B1 (ko) * 1993-09-27 1999-02-01 사토 후미오 여기산소 또는 여기가스의 생성방법 및 공급방법
US5411772A (en) * 1994-01-25 1995-05-02 Rockwell International Corporation Method of laser ablation for uniform thin film deposition
US5443863A (en) * 1994-03-16 1995-08-22 Auburn University Low-temperature oxidation at surfaces using ozone decomposition products formed by microwave discharge
US5490912A (en) * 1994-05-31 1996-02-13 The Regents Of The University Of California Apparatus for laser assisted thin film deposition
DE19510318B4 (de) * 1995-03-22 2004-02-19 Deutsches Zentrum für Luft- und Raumfahrt e.V. Verfahren und Vorrichtung zur Herstellung epitaktischer Schichten
JP3073906B2 (ja) * 1995-03-27 2000-08-07 財団法人国際超電導産業技術研究センター 超電導デバイスの製造方法
US6652922B1 (en) * 1995-06-15 2003-11-25 Alliedsignal Inc. Electron-beam processed films for microelectronics structures
DE19631101C2 (de) * 1996-08-02 1999-05-20 Siemens Ag Beschichtungsapparatur für oxidische Materialien
JP3704258B2 (ja) * 1998-09-10 2005-10-12 松下電器産業株式会社 薄膜形成方法
US20010052323A1 (en) * 1999-02-17 2001-12-20 Ellie Yieh Method and apparatus for forming material layers from atomic gasses
US7215697B2 (en) * 1999-08-27 2007-05-08 Hill Alan E Matched impedance controlled avalanche driver
AU2422401A (en) * 1999-08-27 2001-04-17 Alan E. Hill Electric oxygen iodine laser
US6826222B2 (en) 1999-08-27 2004-11-30 Alan E. Hill Electric oxygen iodine laser
US6638857B1 (en) * 2000-03-30 2003-10-28 Triquint Technology Holding Co. E-beam deposition method and apparatus for providing high purity oxide films
US20030054105A1 (en) * 2001-08-14 2003-03-20 Hammond Robert H. Film growth at low pressure mediated by liquid flux and induced by activated oxygen
US20030157269A1 (en) * 2002-02-20 2003-08-21 University Of Washington Method and apparatus for precision coating of molecules on the surfaces of materials and devices
JP3910466B2 (ja) * 2002-02-26 2007-04-25 独立行政法人科学技術振興機構 半導体又は絶縁体／金属・層状複合クラスタの作製方法及び製造装置
US8182862B2 (en) * 2003-06-05 2012-05-22 Superpower Inc. Ion beam-assisted high-temperature superconductor (HTS) deposition for thick film tape
JP5273495B2 (ja) * 2005-12-13 2013-08-28 独立行政法人産業技術総合研究所 クラスター成膜装置及び成膜方法、並びにクラスター生成装置及び生成方法
KR100772014B1 (ko) * 2006-07-14 2007-10-31 한국전기연구원 보조 클러스트빔 분사에 의한 고온 초전도막 제조방법,제조장치, 이 방법에 의해 제조되는 고온 초전도막
DE102008028542B4 (de) * 2008-06-16 2012-07-12 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Verfahren und Vorrichtung zum Abscheiden einer Schicht auf einem Substrat mittels einer plasmagestützten chemischen Reaktion
JP5866815B2 (ja) * 2011-06-21 2016-02-24 株式会社アルバック 成膜方法
RU2508576C1 (ru) * 2012-07-26 2014-02-27 Федеральное государственное бюджетное образовательное учреждение высшего профессионального образования Поволжский государственный технологический университет Способ электроискрового формирования тонкопленочной втсп схемы
RU2676720C1 (ru) * 2018-03-28 2019-01-10 Федеральное государственное бюджетное учреждение науки Институт электрофизики Уральского отделения Российской академии наук Способ вакуумного ионно-плазменного низкотемпературного осаждения нанокристаллического покрытия из оксида алюминия
CN112899617B (zh) * 2019-12-04 2023-03-31 中微半导体设备(上海)股份有限公司 形成耐等离子体涂层的方法、装置、零部件和等离子体处理装置

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US4925829A (en) * 1987-05-26 1990-05-15 Sumitomo Electric Industries, Ltd. Method for preparing thin film of compound oxide superconductor by ion beam techniques
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Also Published As

Publication number Publication date
DE68922734D1 (de) 1995-06-22
US5374613A (en) 1994-12-20
EP0431160A4 (de) 1991-03-18
US5158931A (en) 1992-10-27
EP0431160A1 (de) 1991-06-12
WO1989008605A1 (en) 1989-09-21
US5284824A (en) 1994-02-08
EP0431160B1 (de) 1995-05-17

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Legal Events

Date Code Title Description
8363 Opposition against the patent
8320 Willingness to grant licences declared (paragraph 23)
8331 Complete revocation