DE68912415D1 - Integrierte Stromspiegelschaltung mit vertikalen Transistoren. - Google Patents
Integrierte Stromspiegelschaltung mit vertikalen Transistoren.Info
- Publication number
- DE68912415D1 DE68912415D1 DE89201487T DE68912415T DE68912415D1 DE 68912415 D1 DE68912415 D1 DE 68912415D1 DE 89201487 T DE89201487 T DE 89201487T DE 68912415 T DE68912415 T DE 68912415T DE 68912415 D1 DE68912415 D1 DE 68912415D1
- Authority
- DE
- Germany
- Prior art keywords
- current mirror
- mirror circuit
- integrated current
- vertical transistors
- transistors
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/861—Diodes
- H01L29/87—Thyristor diodes, e.g. Shockley diodes, break-over diodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
- H01L27/07—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common
- H01L27/0744—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common without components of the field effect type
- H01L27/075—Bipolar transistors in combination with diodes, or capacitors, or resistors, e.g. lateral bipolar transistor, and vertical bipolar transistor and resistor
- H01L27/0755—Vertical bipolar transistor in combination with diodes, or capacitors, or resistors
- H01L27/0761—Vertical bipolar transistor in combination with diodes only
-
- G—PHYSICS
- G05—CONTROLLING; REGULATING
- G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
- G05F3/00—Non-retroactive systems for regulating electric variables by using an uncontrolled element, or an uncontrolled combination of elements, such element or such combination having self-regulating properties
- G05F3/02—Regulating voltage or current
- G05F3/08—Regulating voltage or current wherein the variable is dc
- G05F3/10—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics
- G05F3/16—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices
- G05F3/20—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations
- G05F3/26—Current mirrors
- G05F3/265—Current mirrors using bipolar transistors only
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Nonlinear Science (AREA)
- Electromagnetism (AREA)
- Radar, Positioning & Navigation (AREA)
- Automation & Control Theory (AREA)
- Ceramic Engineering (AREA)
- Bipolar Integrated Circuits (AREA)
- Amplifiers (AREA)
- Bipolar Transistors (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
NL8801520 | 1988-06-15 |
Publications (2)
Publication Number | Publication Date |
---|---|
DE68912415D1 true DE68912415D1 (de) | 1994-03-03 |
DE68912415T2 DE68912415T2 (de) | 1994-07-28 |
Family
ID=19852462
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE68912415T Expired - Fee Related DE68912415T2 (de) | 1988-06-15 | 1989-06-09 | Integrierte Stromspiegelschaltung mit vertikalen Transistoren. |
Country Status (5)
Country | Link |
---|---|
US (1) | US4894622A (de) |
EP (1) | EP0346978B1 (de) |
JP (1) | JP2713461B2 (de) |
KR (1) | KR900001027A (de) |
DE (1) | DE68912415T2 (de) |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5512859A (en) * | 1994-11-16 | 1996-04-30 | National Semiconductor Corporation | Amplifier stage having compensation for NPN, PNP beta mismatch and improved slew rate |
US5510754A (en) * | 1994-11-18 | 1996-04-23 | National Semiconductor Corporation | Fast slewing amplifier using dynamic current mirrors |
US5515007A (en) * | 1994-12-22 | 1996-05-07 | National Semiconductor Corporation | Triple buffered amplifier output stage |
DE102005019157A1 (de) | 2005-04-25 | 2006-10-26 | Robert Bosch Gmbh | Anordnung von MOSFETs zur Steuerung von demselben |
RU2474954C1 (ru) * | 2011-12-13 | 2013-02-10 | Федеральное государственное бюджетное образовательное учреждение высшего профессионального образования "Южно-Российский государственный университет экономики и сервиса" (ФГБОУ ВПО "ЮРГУЭС") | Токовое зеркало |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4057763A (en) * | 1976-05-17 | 1977-11-08 | Rca Corporation | Current amplifiers |
US4371792A (en) * | 1980-07-24 | 1983-02-01 | National Semiconductor Corporation | High gain composite transistor |
IT1221019B (it) * | 1985-04-01 | 1990-06-21 | Ates Componenti Elettron | Dispositivo elettronico integrato per il comando di carichi induttivi,con elemento di ricircolo |
-
1988
- 1988-12-08 US US07/281,565 patent/US4894622A/en not_active Expired - Fee Related
-
1989
- 1989-06-09 EP EP89201487A patent/EP0346978B1/de not_active Expired - Lifetime
- 1989-06-09 DE DE68912415T patent/DE68912415T2/de not_active Expired - Fee Related
- 1989-06-12 JP JP1146918A patent/JP2713461B2/ja not_active Expired - Lifetime
- 1989-06-12 KR KR1019890008048A patent/KR900001027A/ko not_active Application Discontinuation
Also Published As
Publication number | Publication date |
---|---|
US4894622A (en) | 1990-01-16 |
EP0346978A1 (de) | 1989-12-20 |
KR900001027A (ko) | 1990-01-31 |
DE68912415T2 (de) | 1994-07-28 |
JPH0244805A (ja) | 1990-02-14 |
EP0346978B1 (de) | 1994-01-19 |
JP2713461B2 (ja) | 1998-02-16 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8327 | Change in the person/name/address of the patent owner |
Owner name: PHILIPS ELECTRONICS N.V., EINDHOVEN, NL |
|
8327 | Change in the person/name/address of the patent owner |
Owner name: KONINKLIJKE PHILIPS ELECTRONICS N.V., EINDHOVEN, N |
|
8339 | Ceased/non-payment of the annual fee |